Professional Documents
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1. a) Give the values of ripple factor and efficiency of a bridge rectifier. [2]
b) What is early effect? [2]
c) What is meant by latching current and holding current? [2]
d) Draw the h-parameter equivalent model of CE and CB configuration. [2]
e) Draw the symbols of Enhancement type and Depletion type MOSFETs. [2]
f) Compare half wave, full wave and bridge rectifier. [3]
g) What are α, β and γ of transistor and what is the relation between them? [3]
h) State any three differences between JFET and BJT. [3]
i) What are the typical values of h-parameters in CE, CB and CC configurations? [3]
j) What are the Conditions for different regions of operation of N-Channel MOSFET. [3]
OR
5. a) Explain the working of the transistor as a switch. [5]
b) In a silicon transistor with a fixed bias, V CC = 9 V, RC = 3 kΩ, RB = 8 kΩ, β = 50, VBE = 0.7 V. Find
the operating point and stability factor S.
[5]
[5]
6. a) Illustrate the construction and principle of operation of JFET with necessary diagrams. [6]
[ ]
2
V GS
b) A FET follows the relation ID = IDSS 1− . what are the values of ID and gm for VGS= -1.5 V if IDSS
VP
and VP are given as 8.4 mA and -3 V respectively? [4]
OR
7. a) Explain the construction of SCR with neat diagram. Draw its V-I characteristics. [5]
b) Determine the value of RL that will establish maximum power conditions for the zener diode
shown is circuit below. [5]
8. Draw the h-parameter equivalent circuit for a typical common emitter amplifier and derive
expression for Ai, Av, Ri and Ro. [10]
OR
9. a) Draw the circuit diagram of CB amplifier and explain its operation in detail. [5]
b) In the CE amplifier calculate the mid frequency voltage gain and lower 3-dB point. The
transistor has h-parameters hfe = 400 and hie = 10 kΩ, the circuit details are R s = 600 Ω, RL = 5 kΩ, Re =
1 kΩ, Vcc = 12 V R1 = 15kΩ, R2 = 2.2 kΩ and Ce = 50µF. [5]