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1. Overview
1.1 Features
The R8C/35C Group of single-chip MCUs incorporates the R8C CPU core, employing sophisticated instructions
for a high level of efficiency. With 1 Mbyte of address space, and it is capable of executing instructions at high
speed. In addition, the CPU core boasts a multiplier for high-speed operation processing.
Power consumption is low, and the supported operating modes allow additional power control. These MCUs are
designed to maximize EMI/EMS performance.
Integration of many peripheral functions, including multifunction timer and serial interface, reduces the number of
system components.
The R8C/35C Group has data flash (1 KB × 4 blocks) with the background operation (BGO) function.
1.1.1 Applications
Electronic household appliances, office equipment, audio equipment, consumer equipment, etc.
1.1.2 Specifications
Tables 1.1 and 1.2 outline the Specifications for R8C/35C Group.
Table 1.3 Product List for R8C/35C Group Current of Aug 2010
ROM Capacity RAM
Part No. Package Type Remarks
Program ROM Data flash Capacity
R5F21354CNFP 16 Kbytes 1 Kbyte × 4 1.5 Kbytes PLQP0052JA-A N version
R5F21355CNFP 24 Kbytes 1 Kbyte × 4 2 Kbytes PLQP0052JA-A
R5F21356CNFP 32 Kbytes 1 Kbyte × 4 2.5 Kbytes PLQP0052JA-A
R5F21357CNFP 48 Kbytes 1 Kbyte × 4 4 Kbytes PLQP0052JA-A
R5F21358CNFP 64 Kbytes 1 Kbyte × 4 6 Kbytes PLQP0052JA-A
R5F2135ACNFP 96 Kbytes 1 Kbyte × 4 8 Kbytes PLQP0052JA-A
R5F2135CCNFP 128 Kbytes 1 Kbyte × 4 10 Kbytes PLQP0052JA-A
R5F21354CDFP 16 Kbytes 1 Kbyte × 4 1.5 Kbytes PLQP0052JA-A D version
R5F21355CDFP 24 Kbytes 1 Kbyte × 4 2 Kbytes PLQP0052JA-A
R5F21356CDFP 32 Kbytes 1 Kbyte × 4 2.5 Kbytes PLQP0052JA-A
R5F21357CDFP 48 Kbytes 1 Kbyte × 4 4 Kbytes PLQP0052JA-A
R5F21358CDFP 64 Kbytes 1 Kbyte × 4 6 Kbytes PLQP0052JA-A
R5F2135ACDFP 96 Kbytes 1 Kbyte × 4 8 Kbytes PLQP0052JA-A
R5F2135CCDFP 128 Kbytes 1 Kbyte × 4 10 Kbytes PLQP0052JA-A
Part No. R 5 F 21 35 6 C N FP
Package type:
FP: PLQP0052JA-A (0.65 mm pin-pitch, 10 mm square body)
Classification
N: Operating ambient temperature -20°C to 85°C
D: Operating ambient temperature -40°C to 85°C
ROM capacity
4: 16 KB
5: 24 KB
6: 32 KB
7: 48 KB
8: 64 KB
A: 96 KB
C: 128 KB
R8C/35C Group
R8C/3x Series
Memory type
F: Flash memory
Renesas MCU
Renesas semiconductor
Figure 1.1 Part Number, Memory Size, and Package of R8C/35C Group
8 8 8 8 5 1 2 8
Peripheral functions
UART or
Timers clock synchronous serial I/O System clock generation
(8 bits × 3) circuit
Timer RA (8 bits × 1)
Timer RB (8 bits × 1) XIN-XOUT
Timer RC (16 bits × 1) I2C bus or SSU High-speed on-chip oscillator
Timer RD (16 bits × 2) (8 bits × 1) Low-speed on-chip oscillator
Timer RE (8 bits × 1) XCIN-XCOUT
LIN module
Low-speed on-chip oscillator
Watchdog timer for watchdog timer
(14 bits) Comparator B
Multiplier
Notes:
1. ROM size varies with MCU type.
2. RAM size varies with MCU type.
P1_1/AN9/KI1(/TRCIOA/TRCTRG)
P6_6/INT2(/TXD2/SDA2/TRCIOC)
P6_5/INT4(/CLK1/CLK2/TRCIOB)
P4_5/ADTRG/INT0(/RXD2/SCL2)
P1_3/AN11/Kl3/TRBO(/TRCIOC)
P1_7/IVCMP1/INT1(/TRAIO)
P1_5(/INT1/RXD0/TRAIO)
P0_7/AN0/DA1(/TRCIOC)
P1_2/AN10/Kl2(/TRCIOB)
P1_0/AN8/KI0(/TRCIOD)
P1_4(/TXD0/TRCCLK)
P1_6/IVREF1(/CLK0)
P6_7(/INT3/TRCIOD)
39 38 37 36 35 34 33 32 31 30 29 28 27
P0_6/AN1/DA0(/TRCIOD) 40 26 P3_1(/TRBO)
P0_5/AN2(/TRCIOB) 41 25 P3_6(/INT1)
P0_4/AN3/TREO(/TRCIOB) 42 24 P2_0(/INT1/TRCIOB/TRDIOA0/TRDCLK)
P0_3/AN4(/CLK1/TRCIOB) 43 23 P2_1(/TRCIOC/TRDIOC0)
P0_2/AN5(/RXD1/TRCIOA/TRCTRG) 44 22 P2_2(/TRCIOD/TRDIOB0)
P0_1/AN6(/TXD1/TRCIOA/TRCTRG) 45 21 P2_3(/TRDIOD0)
P0_0/AN7(/TRCIOA/TRCTRG) 46 R8C/35C Group 20 P2_4(/TRDIOA1)
P6_4(/RXD1) 47 19 P2_5(/TRDIOB1)
P6_3(/TXD1) 48 18 P2_6(/TRDIOC1)
P6_2(/CLK1) 49 PLQP0052JA-A(52P6A-A) 17 P2_7(/TRDIOD1)
P6_1 50 (top view) 16 P3_3/IVCMP3/INT3/SCS(/CTS2/RTS2/TRCCLK)
P6_0(/TREO) 51 15 P3_4/IVREF3/SSI(/RXD2/SCL2/TXD2/SDA2/TRCIOC)
P5_7 52 14 P3_5/SCL/SSCK(/CLK2/TRCIOD)
1 2 3 4 5 6 7 8 9 10 11 12 13
MODE
VSS/AVSS
P4_2/VREF
RESET
P4_7/XOUT
P3_7/SDA/SSO/TRAO(/RXD2/SCL2/TXD2/SDA2)
P5_6(/TRAO)
P3_2(/INT1/INT2/TRAIO)
P3_0(/TRAO)
P4_3(/XCIN)
P4_4(/XCOUT)
P4_6/XIN
VCC/AVCC
Notes:
1. Can be assigned to the pin in parentheses by a program.
2. Confirm the pin 1 position on the package by referring to the package dimensions.
b19 b15 b0
PC Program counter
b15 b0
USP User stack pointer
b15 b0
b15 b8 b7 b0
IPL U I O B S Z D C
Carry flag
Debug flag
Zero flag
Sign flag
Register bank select flag
Overflow flag
Interrupt enable flag
Stack pointer select flag
Reserved bit
Processor interrupt priority level
Reserved bit
Note:
1. These registers comprise a register bank. There are two register banks.
2.6 User Stack Pointer (USP) and Interrupt Stack Pointer (ISP)
The stack pointers (SP), USP and ISP, are each 16 bits wide. The U flag of FLG is used to switch between
USP and ISP.
3. Memory
00000h SFR
(Refer to 4. Special
Function Registers
002FFh (SFRs))
00400h
Internal ROM
(program ROM)
ZZZZZh
FFFFFh
Notes:
1. Data flash indicates block A (1 Kbyte), block B (1 Kbyte), block C (1 Kbyte), and block D (1 Kbyte).
2. The blank areas are reserved and cannot be accessed by users.
5. Electrical Characteristics
P0
P1
P2 30pF
P3
P4
P5
P6
Table 5.7 Flash Memory (Data flash Block A to Block D) Electrical Characteristics
Standard
Symbol Parameter Conditions Unit
Min. Typ. Max.
− Program/erase endurance (2) 10,000 (3) − − times
− Byte program time − 160 1,500 µs
(program/erase endurance ≤ 1,000 times)
− Byte program time − 300 1,500 µs
(program/erase endurance > 1,000 times)
− Block erase time − 0.2 1 s
(program/erase endurance ≤ 1,000 times)
− Block erase time − 0.3 1 s
(program/erase endurance > 1,000 times)
td(SR-SUS) Time delay from suspend request until − − 5+CPU clock ms
suspend × 3 cycles
− Interval from erase start/restart until 0 − − µs
following suspend request
− Time from suspend until erase restart − − 30+CPU clock µs
× 1 cycle
td(CMDRST- Time from when command is forcibly − − 30+CPU clock µs
READY) terminated until reading is enabled × 1 cycle
− Program, erase voltage 2.7 − 5.5 V
− Read voltage 1.8 − 5.5 V
− Program, erase temperature −20 (7) − 85 °C
− Data hold time (8) Ambient temperature = 55 °C 20 − − year
Notes:
1. VCC = 2.7 to 5.5 V and Topr = −20 to 85°C (N version) / −40 to 85°C (D version), unless otherwise specified.
2. Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 10,000), each block can be erased n times. For example, if 1,024 1-byte
writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is erased, the
programming/erasure endurance still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. In addition, averaging the erasure endurance between blocks A to D can further
reduce the actual erasure endurance. It is also advisable to retain data on the erasure endurance of each block and limit the
number of erase operations to a certain number.
5. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
command at least three times until the erase error does not occur.
6. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
7. −40°C for D version.
8. The data hold time includes time that the power supply is off or the clock is not supplied.
Suspend request
(FMR21 bit)
FST7 bit
FST6 bit
Clock-dependent
Fixed time time
Access restart
td(SR-SUS)
Internal
reset signal
1 1
× 32 × 32
fOCO-S fOCO-S
Notes:
1. Vdet0 indicates the voltage detection level of the voltage detection 0 circuit. Refer to 6. Voltage Detection
Circuit of User’s Manual: Hardware (REJ09B0567) for details.
2. tw(por) indicates the duration the external power VCC must be held below the valid voltage (0.5 V) to enable
a power-on reset. When turning on the power after it falls with voltage monitor 0 reset disabled, maintain
tw(por) for 1 ms or more.
Table 5.15 Timing Requirements of Synchronous Serial Communication Unit (SSU) (1)
Standard
Symbol Parameter Conditions Unit
Min. Typ. Max.
tSUCYC SSCK clock cycle time 4 − − tCYC (2)
tHI SSCK clock “H” width 0.4 − 0.6 tSUCYC
tLO SSCK clock “L” width 0.4 − 0.6 tSUCYC
tRISE SSCK clock rising Master − − 1 tCYC (2)
time Slave − − 1 µs
tFALL SSCK clock falling Master − − 1 tCYC (2)
time Slave − − 1 µs
tSU SSO, SSI data input setup time 100 − − ns
tH SSO, SSI data input hold time 1 − − tCYC (2)
tLEAD SCS setup time Slave 1tCYC + 50 − − ns
tLAG SCS hold time Slave 1tCYC + 50 − − ns
tOD SSO, SSI data output delay time − − 1 tCYC (2)
tSA SSI slave access time 2.7 V ≤ VCC ≤ 5.5 V − − 1.5tCYC + 100 ns
1.8 V ≤ VCC < 2.7 V − − 1.5tCYC + 200 ns
tOR SSI slave out open time 2.7 V ≤ VCC ≤ 5.5 V − − 1.5tCYC + 100 ns
1.8 V ≤ VCC < 2.7 V − − 1.5tCYC + 200 ns
Notes:
1. VCC = 1.8 to 5.5 V, VSS = 0 V and Topr = −20 to 85°C (N version) / −40 to 85°C (D version), unless otherwise specified.
2. 1tCYC = 1/f1(s)
VIH or VOH
SCS (output)
VIL or VOL
SSCK (output)
(CPOS = 1)
tLO
tHI
SSCK (output)
(CPOS = 0)
tLO tSUCYC
SSO (output)
tOD
SSI (input)
tSU tH
VIH or VOH
SCS (output)
VIL or VOL
SSCK (output)
(CPOS = 1)
tLO
tHI
SSCK (output)
(CPOS = 0)
tLO tSUCYC
SSO (output)
tOD
SSI (input)
tSU tH
Figure 5.4 I/O Timing of Synchronous Serial Communication Unit (SSU) (Master)
VIH or VOH
SCS (input)
VIL or VOL
SSCK (input)
(CPOS = 1)
tLO
tHI
SSCK (input)
(CPOS = 0)
tLO tSUCYC
SSO (input)
tSU tH
SSI (output)
tSA tOD tOR
VIL or VOL
SSCK (input)
(CPOS = 1)
tLO
tHI
SSCK (input)
(CPOS = 0)
tLO tSUCYC
SSO (input)
tSU tH
SSI (output)
Figure 5.5 I/O Timing of Synchronous Serial Communication Unit (SSU) (Slave)
tHI
VIH or VOH
SSCK
VIL or VOL
tLO tSUCYC
SSO (output)
tOD
SSI (input)
tSU tH
Figure 5.6 I/O Timing of Synchronous Serial Communication Unit (SSU) (Clock Synchronous
Communication Mode)
VIH
SDA
VIL
tBUF
tSTAH tSCLH tSP tSTOP
tSTAS
SCL
P(2) S(1) Sr(3) P(2)
tSCLL
tsf tsr tSDAS
tSCL
tSDAH
Notes:
1. Start condition
2. Stop condition
3. Retransmit start condition
Notes:
1. Value when the program ROM capacity of the product is 16 Kbytes to 32 Kbytes.
2. Value when the program ROM capacity of the product is 48 Kbytes to 128 Kbytes.
Timing Requirements
(Unless Otherwise Specified: VCC = 5 V, VSS = 0 V at Topr = 25°C)
tWL(XOUT), tWL(XCIN)
tC(TRAIO) VCC = 5 V
tWH(TRAIO)
TRAIO input
tWL(TRAIO)
tC(CK) VCC = 5 V
tW(CKH)
CLKi
tW(CKL)
th(C-Q)
TXDi
td(C-Q) tsu(D-C) th(C-D)
RXDi
i = 0 to 2
Table 5.22 External Interrupt INTi (i = 0 to 4) Input, Key Input Interrupt KIi (i = 0 to 3)
Standard
Symbol Parameter Unit
Min. Max.
tW(INH) INTi input “H” width, KIi input “H” width 250 (1) − ns
tW(INL) INTi input “L” width, KIi input “L” width 250 (2) − ns
Notes:
1. When selecting the digital filter by the INTi input filter select bit, use an INTi input HIGH width of either (1/digital filter clock
frequency × 3) or the minimum value of standard, whichever is greater.
2. When selecting the digital filter by the INTi input filter select bit, use an INTi input LOW width of either (1/digital filter clock
frequency × 3) or the minimum value of standard, whichever is greater.
VCC = 5 V
INTi input tW(INL)
(i = 0 to 4)
KIi input
tW(INH)
(i = 0 to 3)
Figure 5.11 Input Timing Diagram for External Interrupt INTi and Key Input Interrupt KIi when Vcc
=5V
Timing Requirements
(Unless Otherwise Specified: VCC = 3 V, VSS = 0 V at Topr = 25°C)
tWL(XOUT), tWL(XCIN)
tC(TRAIO) VCC = 3 V
tWH(TRAIO)
TRAIO input
tWL(TRAIO)
tC(CK) VCC = 3 V
tW(CKH)
CLKi
tW(CKL)
th(C-Q)
TXDi
RXDi
i = 0 to 2
Table 5.28 External Interrupt INTi (i = 0 to 4) Input, Key Input Interrupt KIi (i = 0 to 3)
Standard
Symbol Parameter Unit
Min. Max.
tW(INH) INTi input “H” width, KIi input “H” width 380 (1) − ns
tW(INL) INTi input “L” width, KIi input “L” width 380 (2) − ns
Notes:
1. When selecting the digital filter by the INTi input filter select bit, use an INTi input HIGH width of either (1/digital filter clock
frequency × 3) or the minimum value of standard, whichever is greater.
2. When selecting the digital filter by the INTi input filter select bit, use an INTi input LOW width of either (1/digital filter clock
frequency × 3) or the minimum value of standard, whichever is greater.
VCC = 3 V
INTi input tW(INL)
(i = 0 to 4)
KIi input
tW(INH)
(i = 0 to 3)
Figure 5.15 Input Timing Diagram for External Interrupt INTi and Key Input Interrupt KIi when Vcc
=3V
Timing Requirements
(Unless Otherwise Specified: VCC = 2.2 V, VSS = 0 V at Topr = 25°C)
tWL(XOUT), tWL(XCIN)
Figure 5.16 External Clock Input Timing Diagram when VCC = 2.2 V
TRAIO input
tWL(TRAIO)
CLKi
tW(CKL)
th(C-Q)
TXDi
RXDi
i = 0 to 2
Table 5.34 External Interrupt INTi (i = 0 to 4) Input, Key Input Interrupt KIi (i = 0 to 3)
Standard
Symbol Parameter Unit
Min. Max.
tW(INH) INTi input “H” width, KIi input “H” width 1000 (1) − ns
tW(INL) INTi input “L” width, KIi input “L” width 1000 (2) − ns
Notes:
1. When selecting the digital filter by the INTi input filter select bit, use an INTi input HIGH width of either (1/digital filter clock
frequency × 3) or the minimum value of standard, whichever is greater.
2. When selecting the digital filter by the INTi input filter select bit, use an INTi input LOW width of either (1/digital filter clock
frequency × 3) or the minimum value of standard, whichever is greater.
VCC = 2.2 V
INTi input tW(INL)
(i = 0 to 4)
KIi input
tW(INH)
(i = 0 to 3)
Figure 5.19 Input Timing Diagram for External Interrupt INTi and Key Input Interrupt KIi when Vcc
= 2.2 V
Package Dimensions
Diagrams showing the latest package dimensions and mounting information are available in the “Packages” section of
the Renesas Electronics website.
HD
*1
D
39 27
NOTE)
40 26 1. DIMENSIONS "*1" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
bp INCLUDE TRIM OFFSET.
b1
HE
E
*2
c1
c
Reference Dimension in Millimeters
Symbol
Min Nom Max
52 Terminal cross section D 9.9 10.0 10.1
ZE
14
E 9.9 10.0 10.1
1 13 A2 1.4
ZD Index mark HD 11.8 12.0 12.2
HE 11.8 12.0 12.2
A 1.7
F A1 0.05 0.1 0.15
c
A2
A
y S
L c1 0.125
*3
e bp
x L1 0° 8°
e 0.65
Detail F x 0.13
y 0.10
ZD 1.1
ZE 1.1
L 0.35 0.5 0.65
L1 1.0
Description
Rev. Date
Page Summary
0.10 Sep. 01, 2009 − First Edition issued
1.00 Aug. 24, 2010 All “Preliminary” and “Under development” deleted
4 Table1.3 revised
27 to 53 5. Electrical Characteristics added
All trademarks and registered trademarks are the property of their respective owners.
C-1
General Precautions in the Handling of MPU/MCU Products
The following usage notes are applicable to all MPU/MCU products from Renesas. For detailed usage notes
on the products covered by this manual, refer to the relevant sections of the manual. If the descriptions under
General Precautions in the Handling of MPU/MCU Products and in the body of the manual differ from each
other, the description in the body of the manual takes precedence.