Silan

Microelectronics SVT078R0NT/S_Datasheet
88A, 68V N-CHANNEL MOSFET

DESCRIPTION

The SVT078R0NT/S is an N-channel enhancement mode power

2
MOS field effect transistor which is produced using Silan's LVMOS
technology. The improved process and cell structure have been
1
especially tailored to minimize on-state resistance, provide superior
switching performance. 3

This device is widely used in the fields of uninterruptible power 1.Gate 2.Drain 3.Source
supplies and power management of inverter systems.

FEATURES

 88A, 68V，RDS(on)(typ.)=6.0m@VGS=10V
1
23 1
 Low gate charge 3
 Low Crss TO-220-3L TO-263-2L
 Fast switching
 Improved dv/dt capability

ORDERING INFORMATION

Part No. Package Marking Hazardous Substance Control Packing

SVT078R0NT TO-220-3L 078R0NT Pb free Tube
SVT078R0NS TO-263-2L 078R0NS Halogen free Tube
SVT078R0NSTR TO-263-2L 078R0NS Halogen free Tape&Reel

ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25C)

Ratings
Characteristics Symbol Unit
SVT078R0NT SVT078R0NS
Drain-Source Voltage VDS 68 V
Gate-Source Voltage VGS ±25 V

TC=25°C 88
Drain Current ID A
TC=100°C 65
Drain Current Pulsed IDM 352 A
Power Dissipation (TC=25C) 140 140 W
PD
-Derate above 25C 0.93 0.93 W/C
Single Pulsed Avalanche Energy (Note1) EAS 420 mJ
Operation Junction Temperature Range TJ -55～+175 C
Storage Temperature Range Tstg -55～+175 C

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.4

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 Silan
Microelectronics SVT078R0NT/S_Datasheet

THERMAL CHARACTERISTICS

Ratings
Characteristics Symbol Unit
SVT078R0NT SVT078R0NS
Thermal Resistance, Junction-to-Case RθJC 1.07 1.07 C/W
Thermal Resistance, Junction-to-Ambient RθJA 62.5 62.5 C/W

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, TC=25C)

Characteristics Symbol Test conditions Min. Typ. Max. Unit

Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 68 -- -- V

Drain-Source Leakage Current IDSS VDS=68V, VGS=0V -- -- 1.0 µA

Gate-Source Leakage Current IGSS VGS=±25V, VDS=0V -- -- ±100 nA

Gate Threshold Voltage VGS(th) VGS= VDS, ID=250µA 2.0 -- 4.0 V

Static Drain- Source

RDS(on) VGS=10V, ID=35A -- 6.0 8.0 m
On State Resistance
Gate Resistance RG f=1MHz 2.0 

Input Capacitance Ciss -- 3962 --

Output Capacitance Coss f=1MHz,VGS=0V,VDS=30V -- 262 -- pF

Reverse Transfer Capacitance Crss -- 180 --

Turn-on Delay Time td(on) -- 24 --

VDD=30V, VGS=10V, RG=8Ω,
Turn-on Rise Time tr -- 46 --
ID=40A ns
Turn-off Delay Time td(off) -- 73 --
(Notes 2,3)
Turn-off Fall Time tf -- 29 --

Total Gate Charge Qg -- 74.6 --

VDD=54V, VGS=10V, ID=40A
Gate-Source Charge Qgs -- 21.8 -- nC
(Notes 2,3)
Gate-Drain Charge Qgd -- 20.5 --

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Characteristics Symbol Test conditions Min. Typ. Max. Unit

Continuous Source Current IS Integral Reverse P-N Junction -- -- 88
A
Pulsed Source Current ISM Diode in the MOSFET -- -- 352
Diode Forward Voltage VSD IS=20A,VGS=0V -- 0.8 1.2 V
Reverse Recovery Time Trr IS=40A,VGS=0V, -- 23 -- ns
Reverse Recovery Charge Qrr dIF/dt=100A/µs -- 0.02 -- µC
Notes:
1.L=1mH, IAS=29A, VDD=50V, RG=10,starting TJ=25C;
2.Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
3.Essentially independent of operating temperature.

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.4

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 Silan
Microelectronics SVT078R0NT/S_Datasheet
TYPICAL CHARACTERISTICS

Figure 1. Output Characteristics Figure 2. Transfer Characteristics

250 1000
VGS=5.0V
VGS=5.5V -55°C
VGS=6.0V
VGS=6.5V 25°C
200 VGS=7.0V
VGS=10V 150°C

Drain Current - ID (A)

Drain Current - ID (A)

VGS=15V 100

150

10
100

1
50
Notes： Notes:
1.VDS=2.5V
1.250µS Pulse test
2.250µS pulse test
2.Tc=25°C
0 0.1
0 1 2 3 4 5 6 2 3 4 5 6 7
Drain-source Voltage - VDS (V) Gate-source Voltage - VGS (V)

Figure 4. Body Diode Forward Voltage

Figure 3. On-resistance vs. Drain Current Variation vs. Source Current and Temperature
10 100
VGS=10V
Reverse Drain Current - IDR(A)
On–Resistance - RDS(ON) (mΩ)

8 10
-55°C

7 25°C

150°C
6 1.0

5 Note:
Notes:
1. VGS=0V
1.Tc=25°C 2. 250µS pulse test

4 0.1
0 20 40 60 80 100 0.2 0.4 0.6 0.8 1 1.2

Drain Current - ID (A) Source-Drain Voltage - VSD (V)

Figure 5. Capacitance Characteristics Figure 6. Gate Charge

10000 12
Ciss VDS=14V
VDS=34V
Gate-Source Voltage - VGS(V)

10 VDS=54V
Coss
Capacitance (pF)

1000 8
Crss

100 4

Ciss=Cgs+Cgd(Cds=short) Notes: 2
Coss=Cds+Cgd 1. VGS=0V
Crss=Cgd 2. f=1MHz Note: ID=40A
10 0
0 1 10 100 0 20 40 60 80

Drain-Source Voltage - VDS(V) Gate Charge - QG (nC)

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.4

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 Silan
Microelectronics SVT078R0NT/S_Datasheet

TYPICAL CHARACTERISTICS (continued)

Figure 7. Breakdown Voltage vs. Figure 8. On-resistance vs. Temperature

Drain-source on resistance (normalized) - RDS(ON)

Drain-source breakdown voltage (normalized) –

Temperature Characteristics Characteristics

1.2 3.0

2.5
1.1
2.0
BVDSS(V)

1.0 1.5

1.0
0.9
Notes: 0.5
Notes:
1. VGS=0V 1. VGS=10V
2. ID=250uA 2. ID=40A
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
Junction Temperature - TJ(°C) Junction Temperature - TJ(°C)

Figure 9-1. Max. Safe Operating

Area(SVT078R0NT/S)
1000

0.1ms

100
1ms
Drain Current, ID(A)

10ms

10 DC

Max. junction temperature:150°C

Max. reference temperature:25°C

0.1
0.1 1 10 100

Drain Source Voltage-- VDS(V)

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.4

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 Silan
Microelectronics SVT078R0NT/S_Datasheet

TYPICAL TEST CIRCUIT

Figure 1:Gate Charge Test Circuit & Waveform

Same Type VGS

Qg
as DUT 10V
50KΩ
VDS
12V 200nF
300nF

Qgs Qgd

VGS

DUT
3mA
Charge

Figure 2:Resistive Switching Test Circuit & Waveform

RL VDS
VDS
90%
VGS
VDD
RG
DUT
10%
VGS
10V
td(on) tr
ton td(off) tf
toff

Figure 3:Unclamped Inductive Switching Test Circuit & Waveform

1 2 BVDSS
EAS =
L 2 LIAS BVDSS - VDD
VDS
BVDSS
ID
IAS

RG
DUT VDD ID(t)
10V
VDD VDS(t)
tp
tp Time

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.4

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 Silan
Microelectronics SVT078R0NT/S_Datasheet

PACKAGE OUTLINE

TO-220-3L UNIT: mm

4.30 4.50 4.70

1.00 1.30 1.50
1.80 2.40 2.80
0.60 0.80 1.00
1.00 1.60
0.30 0.70
15.10 15.70 16.10
8.10 9.20 10.00
9.60 9.90 10.40
2.54BSC
6.10 6.50 7.00
12.60 13.08 13.60

3.95
3.40 3.70 3.90
2.60 3.20

TO-263-2L UNIT: mm

E SYMBOL MIN NOM MAX

L1

c2
A 4.30 4.57 4.72

A1 0 0.10 0.25

b 0.71 0.81 0.91

c 0.30 --- 0.60

c2 1.17 1.27 1.37

D

D 8.50 --- 9.35

E 9.80 --- 10.45

H

e 2.54BSC

c 14.70 --- 15.75

H
A1
L 2.00 2.30 2.74
L2

L1 1.12 1.27 1.42

L2 --- --- 1.75

L

b1 e e b

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.4

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 Silan
Microelectronics SVT078R0NT/S_Datasheet
Disclaimer :
 Silan reserves the right to make changes to the information herein for the improvement of the design and performance without
prior notice! Customers should obtain the latest relevant information before placing orders and should verify that such
information is complete and current.
 All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products in
system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards
strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products could cause
loss of body injury or damage to property.
 Silan will supply the best possible product for customers!

Part No.: SVT078R0NT/S Document Type: Datasheet

Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn

Rev.: 1.4
Revision History:
1. Delete the package outline of TO-252-2L
Rev.: 1.3
Revision History:
1. Update the package outline of TO-220-3L
Rev.: 1.2
Revision History:
1. Add the package outline of TO-263-2L
Rev.: 1.1
Revision History:
1. Delete the package outline of TO-263-2L
Rev.: 1.0
Revision History:
1. First release

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.4

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