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The U3115S/U3116S Fully operated to +300V · Floating channel designed for bootstrap operation
is high voltage, high speed power MOSFET · Fully operational to +300V
and IGBT driver with dependent high and low · Tolerant to negative transient voltage dV/dt immune
side referenced output channels. · Gate drive supply range from 10 to 20V
The logic input is compatible with standard · Undervoltage lockout
CMOS or LSTTL output, down to 3.3V logic. · 3.3V, 5V and 15V input logic compatible
The output drivers feature a high pulse current · Cross-conduction prevention logic
buffer stage designed for minimum driver · Matched propagation delay for both channels
cross-conduction. The floating channel can be
used to drive an N-channel power MOSFET or Product Summary
IGBT in the high side configuration which op-
VOFFSET 300V max
erates up to 300 volts. Packages
IO+/- 1.2 A / 1.5A
Built-in DBoot(FR107)
8-Lead SOP VCCon/off (typ.) 10V & 10.3V
ton/off (typ.) 600 & 280ns
Deadtime (typ.) 200 ns
Work Tem - 40 ~ 150 °C
Products Information
Pin Assignments
U3116S U3115S
Pin Function
LIN Logic input for low side gate driver outputs (LO), out of phase
4 COM Low side return
5 LO Low side gate drive output
6 VS High side floating supply return
7 HO High side gate drive output
8 VB High side floating supply
Typical Connection
Electrical Characteristic
Dynamic Electrical Characteristics
VBIAS (VCC, VBS) = 15V, CL = 1000 pF and TA = 25°C unless otherwise specified.
Electrical Characteristic
VCC = VBS = VBIAS = 15V TA = 25°C unless otherwise specified.
mA
VO = 15V, V
IN = VIL
IO- Output low short circuit pulsed current 1200 1500 - PW ≤ 10 us
Block Diagram
VB
HIN HO
COM
VS
VCC
VCC
LIN LO
COM
U3116S
VB
HIN HO
COM
VS
VCC
LIN LO
COM
COM
U3115S
Time waveform
HIN
LIN
HO
LO
U3115S
HIN
LIN
HO
LO
U3116S
HIN
50% 50%
LIN
LO HO
10%
MT MT
90%
LO HO