INCHANGE Semiconductor

isc Thyristors BTA20-600B

DESCRIPTION
·With TO-220 packaging
·Operating in 4 quadrants
·High commutation capability
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation

APPLICATIONS
·Switching applications
·Phase control
·Static switching on inductive or resistive load

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER MAX UNIT

VDRM Repetitive peak off-state voltage 600 V

VRRM Repetitive peak reverse voltage 600 V

IT(RSM) Average on-state current Tc=70℃ 20 A

50HZ 200
ITSM Surge non-repetitive on-state current A
60HZ 210

PG(AV) Average gate power dissipation ( over any 20 ms period ) Tj=125℃ 1 W

Tj Operating junction temperature -40~125 ℃

Tstg Storage temperature -40~150 ℃

ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

IRRM Repetitive peak reverse current VR=VRRM Rated; Tj=25℃ 10 μA

IDRM Repetitive peak off-state current VD=VDRM Rated; Tj=125℃ 3 mA

VTM On-state voltage IT=28A；tP=380μs 1.7 V

Ⅰ 50
Ⅱ 50
IGT Gate-trigger current VD =12V;RL=33Ω; mA
Ⅲ 50
Ⅳ 100
VGT Gate-trigger voltage VD =12V;RL=33Ω; 1.5 V
Rth (j-c) Junction to case 2.8 ℃/W

isc website：www.iscsemi.com isc & iscsemi is registered trademark