SP8K3

Transistors

Switching (30V, 7.0A)

SP8K3

zFeatures zExternal dimensions (Unit : mm)

1) Low on-resistance.
SOP8
2) Built-in G-S Protection Diode.
5.0±0.2
3) Small and Surface Mount Package (SOP8).

(5)
(8)
3.9±0.15
6.0±0.3

0.5±0.1
zApplication
Power switching, DC / DC converter.

(1)

(4)

Max.1.75
0.2±0.1

1.5±0.1
zStructure 0.4±0.1

0.15
1.27
0.1
Silicon N-channel Each lead has same dimensions
MOS FET

zAbsolute maximum ratings (Ta=25°C) zEquivalent circuit

It is the same ratings for the Tr. 1 and Tr. 2. www.DataSheet.co.kr
(8) (7) (6) (5) (8) (7) (6) (5)

Parameter Symbol Limits Unit

Drain-source voltage VDSS 30 V
Gate-source voltage VGSS 20 V
Continuous ID ±7.0 A
Drain current ∗2 ∗2
Pulsed IDP ±28 A ∗1 (1) (2) (3) (4)

Source current Continuous IS 1.6 A (1) Tr1 Source

∗1 (2) Tr1 Gate
(Body diode) Pulsed ISP 6.4 A ∗1 ∗1
(3) Tr2 Source
Total power dissipation PD 2 W ∗2 (4) Tr2 Gate
(5) Tr2 Drain
Channel temperature Tch 150 °C (1) (2) (3) (4)
(6) Tr2 Drain
Storage temperature Tstg −55 to +150 °C ∗1 ESD PROTECTION DIODE (7) Tr1 Drain
∗1 Pw 10µs, Duty cycle 1% ∗2 BODY DIODE (8) Tr1 Drain
∗2 MOUNTED ON A CERAMIC BOARD.
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.

zThermal resistance (Ta=25°C)

Parameter Symbol Limits Unit
∗
Channel to ambient Rth (ch-a) 62.5 °C / W
∗MOUNTED ON A CERAMIC BOARD.

1/3

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 SP8K3
Transistors

zElectrical characteristics (Ta=25°C)

It is the same characteristics for the Tr. 1 and Tr. 2.
Parameter Symbol Min. Typ. Max. Unit Conditions
Gate-source leakage IGSS − − 10 µA VGS=20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 30 − − V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS − − 1 µA VDS=30V, VGS=0V
Gate threshold voltage VGS (th) 1.0 − 2.5 V VDS=10V, ID=1mA
− 17 24 ID=7.0A, VGS=10V
Static drain-source on-state ∗
RDS (on) − 23 33 mΩ ID=7.0A, VGS=4.5V
resistance
− 25 35 ID=7.0A, VGS=4V
Forward transfer admittance Yfs ∗ 5.0 − − S ID=7.0A, VDS=10V
Input capacitance Ciss − 600 − pF VDS=10V
Output capacitance Coss − 200 − pF VGS=0V
Reverse transfer capacitance Crss − 120 − pF f=1MHz
Turn-on delay time td (on) ∗ − 8 − ns ID=3.5A, VDD 15V
Rise time tr ∗ − 10 − ns VGS=10V
Turn-off delay time td (off) ∗ − 37 − ns RL=4.29Ω
Fall time tf ∗ − 11 − ns RGS=10Ω
Total gate charge Qg ∗ − 8.4 11.8 nC VDD 15V
Gate-source charge Qgs ∗ − 1.9 − nC VGS=5V
Gate-drain charge Qgd ∗ − 3.3 − nC ID=7.0A
∗Pulsed

zBody diode characteristics (Source-Drain Characteristics) (Ta=25°C)

It is the same characteristics for the Tr. 1 and Tr. 2.
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage VSD∗ − − 1.2 V
www.DataSheet.co.kr
IS=6.4A, VGS=0V
∗Pulsed

2/3

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 SP8K3
Transistors

zElectrical characteristic curves

10000 10000 10
Ta=25°C Ta=25°C Ta=25°C

GATE-SOURCE VOLTAGE : VGS (V)

f=1MHz VDD=15V 9 VDD=15V
VGS=0V VGS=10V ID=7A
8
RG=10Ω RG=10Ω

SWITCHING TIME : t (ns)

CAPACITANCE : C (pF)

1000 tf Pulsed 7 Pulsed

1000
6
Ciss td (off)
100 5
4
Coss
100 tr
Crss 3
10
2
td (on)
1
10 1 0
0.01 0.1 1 10 100 0.01 0.1 1 10 0 2 4 6 8 10 12 14 16
DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (A) TOTAL GATE CHARGE : Qg (nC)

Fig.1 Typical Capacitance Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics
vs. Drain-Source Voltage

100 300 100

ON-STATE RESISTANCE : RDS (on) (mΩ)

VDS=10V Ta=25°C VGS=0V

Pulsed Pulsed Pulsed
250

SOURCE CURRENT : Is (A)

10 Ta=125°C
DRAIN CURRENT : ID (A)

Ta=125°C 10 Ta=75°C
Ta=75°C Ta=25°C
200
Ta=25°C ID=7A Ta= −25°C
STATIC DRAIN-SOURCE

1
Ta= −25°C
ID=3.5A
150 1
0.1
100
0.1
0.01
50

www.DataSheet.co.kr

0.001 0 0.01
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 8 10 12 14 16 0.0 0.5 1.0 1.5
GATE-SOURCE VOLTAGE : VGS (V) GATE-SOURCE VOLTAGE : VGS (V) SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source Fig.6 Source Current vs.
On-State Resistance vs. Source-Drain Voltage
Gate-Source Voltage

10000 10000 10000

ON-STATE RESISTANCE : RDS (on) (mΩ)

ON-STATE RESISTANCE : RDS (on) (mΩ)

ON-STATE RESISTANCE : RDS (on) (mΩ)

VGS=10V VGS=4.5V VGS=4V

Pulsed Pulsed Pulsed

1000 1000 1000

Ta=125°C Ta=125°C Ta=125°C
Ta=75°C Ta=75°C Ta=75°C
STATIC DRAIN-SOURCE

STATIC DRAIN-SOURCE

STATIC DRAIN-SOURCE

Ta=25°C Ta=25°C Ta=25°C

Ta= −25°C Ta= −25°C Ta= −25°C
100 100 100

10 10 10

1 1 1
0.1 1 10 0.1 1 10 0.1 1 10
DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A)

Fig.7 Static Drain-Source Fig.8 Static Drain-Source Fig.9 Static Drain-Source

On-State Resistance On-State Resistance On-State Resistance
vs. Drain Current (Ι) vs. Drain Current (ΙΙ) vs. Drain Current (ΙΙΙ)

3/3

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Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
www.DataSheet.co.kr

(such as audio visual equipment, office-automation equipment, communications devices, electrical

appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.0

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