PD - 94230

SMPS MOSFET IRFP23N50L

HEXFET® Power MOSFET
Applications VDSS RDS(on) typ. Trr typ. ID
l Switch Mode Power Supply (SMPS)
l UninterruptIble Power Supply 500V 0.190Ω 170ns 23A
l High Speed Power Switching
l Motor Drive
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage and
Current
l Enhanced Body Diode dv/dt Capability TO-247AC

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 23
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 15 A
IDM Pulsed Drain Current  92
PD @TC = 25°C Power Dissipation 370 W
Linear Derating Factor 2.9 W/°C
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt ƒ 14 V/ns
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 °C
(1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)

Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current ––– ––– 23 MOSFET symbol
(Body Diode) showing the
A
ISM Pulsed Source Current ––– ––– 92 integral reverse G

(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 14A, VGS = 0V „
––– 170 250 TJ = 25°C IF = 23A
trr Reverse Recovery Time ns
––– 220 330 TJ = 125°C di/dt = 100A/µs „
––– 560 840 nC TJ = 25°C
Qrr Reverse Recovery Charge
––– 980 1500 nC TJ = 125°C
IRRM Reverse Recovery Current ––– 7.6 11 A
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Typical SMPS Topologies

l Bridge Converters l All Zero Voltage Switching
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IRFP23N50L
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.27 ––– V/°C Reference to 25°C, ID = 1mA†
RDS(on) Static Drain-to-Source On-Resistance ––– 0.190 0.235 Ω VGS = 10V, ID = 14A „
VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = V GS, ID = 250µA
––– ––– 50 VDS = 500V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 2 VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 12 ––– ––– S VDS = 50V, ID = 14A
Qg Total Gate Charge ––– ––– 150 ID = 23A
Qgs Gate-to-Source Charge ––– ––– 44 nC VDS = 400V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 72 VGS = 10V, See Fig. 6 and 13 „
td(on) Turn-On Delay Time ––– 26 ––– VDD = 250V
tr Rise Time ––– 94 ––– ns ID = 23A
td(off) Turn-Off Delay Time ––– 53 ––– RG = 6.0Ω
tf Fall Time ––– 45 ––– VGS = 10V,See Fig. 10 „
Ciss Input Capacitance ––– 3600 ––– VGS = 0V
Coss Output Capacitance ––– 380 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 37 ––– pF ƒ = 1.0MHz, See Fig. 5
Coss Output Capacitance ––– 4800 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 100 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 220 ––– VGS = 0V, VDS = 0V to 400V …

Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy‚ ––– 410 mJ
IAR Avalanche Current ––– 23 A
EAR Repetitive Avalanche Energy ––– 37 mJ

Thermal Resistance
Symbol Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.34
RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
RθJA Junction-to-Ambient ––– 40

Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
‚ Starting TJ = 25°C, L = 1.5mH, RG = 25Ω,
IAS = 23A, dv/dt = 14V/ns (See Figure 12a)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS

ƒ ISD ≤ 23A, di/dt ≤ 430A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C
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 IRFP23N50L

100 100
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

10 7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
5.0V 10 5.0V
BOTTOM 4.5V BOTTOM 4.5V
1

0.1
1
4.5V
0.01
4.5V
20µs PULSE WIDTH 20µs PULSE WIDTH
Tj = 25°C Tj = 150°C
0.001 0.1
0.1 1 10 100 1 10 100
VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000.00

3.0
I D = 23A
ID, Drain-to-Source Current (Α )

2.5

T J = 25°C
100.00
R DS(on) , Drain-to-Source On Resistance

2.0
(Normalized)

T J = 150°C 1.5

10.00 1.0

0.5
VDS = 15V

1.00
20µs PULSE WIDTH 
V GS = 10V
0.0
1.0 6.0 11.0 16.0 -60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature ( °C)

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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IRFP23N50L

100000 12
VGS = 0V, f = 1 MHZ 
ID = 23


Ciss = Cgs + Cgd, Cds SHORTED V DS = 400V
Crss = Cgd V DS = 250V
10 V DS = 100V
10000 Coss = Cds + Cgd
C, Capacitance(pF)

VGS, Gate-to-Source Voltage (V)

Ciss
7

1000

5
Coss
100
2

Crss
10 0
0 24 48 72 96 120
1 10 100 1000
Q G, Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100.00 1000


OPERATION IN THIS AREA LIMITED
BY R DS(on)
ISD, Reverse Drain Current (A)

TJ = 150°C
I D , Drain Current (A)

10.00 100

10us


100us
T J = 25°C
1.00 10

1ms

0.10
VGS = 0V
1
 TC = 25 ° C
TJ = 150 ° C
Single Pulse

10ms

10 100 1000 10000

0.0 0.5 1.0 1.5 2.0
VDS , Drain-to-Source Voltage (V)
VSD , Source-toDrain Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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 IRFP23N50L

25
RD
VDS

VGS
D.U.T.
20
RG
+
-VDD
ID , Drain Current (A)

15 10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

10

Fig 10a. Switching Time Test Circuit

5 VDS
90%

0
25 50 75 100 125 150

TC , Case Temperature ( °C)

10%
VGS
Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms

10
(Z thJC)

D = 0.50
Thermal Response


0.1
0.20

0.10
P DM
0.05


0.02 SINGLE PULSE t1
0.01
0.01 (THERMAL RESPONSE)
t2

0.001
 Notes:
1. Duty factor D =
2. Peak T J
t1/ t 2
= P DM x Z thJC +TC

0.00001 0.0001 0.001 0.01 0.1 1

t 1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFP23N50L


750 5.0
ID
TOP 10A

VGS(th) Gate threshold Voltage (V)

4.5
15A
600 BOTTOM 23A
4.0
EAS , Single Pulse Avalanche Energy (mJ)

3.5 ID = 250µA
450

3.0

300 2.5

2.0
150
1.5

1.0
0
25 50 75 100 125 150
-75 -50 -25 0 25 50 75 100 125 150

Starting T , Junction
J Temperature ( °C) T J , Temperature ( °C )

Fig 12a. Maximum Avalanche Energy Fig 14. Threshold Voltage Vs. Temperature
Vs. Drain Current

1 5V

V (B R )D SS
tp
L D R IV E R
VDS

RG D .U .T +
- VD D
IA S A
20V
tp 0 .0 1 Ω
IAS

Fig 12c. Unclamped Inductive Test Circuit Fig 12d. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.

QG
50KΩ
.2µF
12V
.3µF VGS V
+ QGS QGD
V
D.U.T. - DS

VGS VG
3mA

IG ID
Current Sampling Resistors
Charge
Fig 13a. Gate Charge Test Circuit Fig 13b. Basic Gate Charge Waveform
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 IRFP23N50L

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFET® Power MOSFETs

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IRFP23N50L
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)

3 .65 (.1 43 ) -D-

15 .90 (.6 26 ) 3 .55 (.1 40 ) 5 .3 0 (.2 09 )
15 .30 (.6 02 ) 4 .7 0 (.1 85 )
0.25 (.0 1 0) M D B M
-B - -A - 2 .5 0 (.08 9)
1 .5 0 (.05 9)
5 .50 (. 217 ) 4

2 0 .3 0 (.80 0)
1 9 .7 0 (.77 5) 5.5 0 (.2 17) NO TES :
2X
4.5 0 (.1 77) 1 D IME N SION ING & TO LE R AN CING
P E R A NS I Y14.5M, 1982.
1 2 3 2 C ON TR OLLIN G D IME N SIO N : IN CH .
3 C ON F OR MS TO JED E C OU TLIN E
-C- T O-247-A C .
14 .8 0 (.5 83 ) 4.3 0 (.1 70)
14 .2 0 (.5 59 ) 3.7 0 (.1 45)

2 .40 (. 094 ) LE AD A S SIG N MEN TS

1 .40 (.0 56 ) 0 .80 (.03 1)
2 .00 (. 079 ) 3X 1 .00 (.0 39 ) 3 X 0 .40 (.01 6) 1 - GA TE
2X 2 - DR AIN
0 .2 5 (.0 10 ) M C A S 2 .60 (.1 0 2) 3 - SO UR C E
5.45 (.21 5) 2 .20 (.0 8 7) 4 - DR AIN
3 .40 (.13 3)
2X 3 .00 (.11 8)

TO-247AC Part Marking Information

EXAMPLE: THIS IS AN IRFPE30

WITH ASSEMBLY PART NUMBER
INTERNATIONAL
LOT CODE 5657
RECTIFIER IRFPE30
ASSEMBLED ON WW 35, 2000 LOGO 035H
IN THE ASSEMBLY LINE "H" 56 57
DATE CODE
ASSEMBLY
YEAR 0 = 2000
LOT CODE
WEEK 35
LINE H

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/01
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