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2SK3767
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

2SK3767
Switching Regulator Applications
Unit: mm

• Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.)

• High forward transfer admittance: |Yfs| = 1.6S (typ.)
• Low leakage current: IDSS = 100μA (VDS = 600 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Maximum
www.DataSheet4U.com Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 600 V

Drain-gate voltage (RGS = 20 kΩ) VDGR 600 V
Gate-source voltage VGSS ±30 V
DC (Note 1) ID 2
Drain current A
Pulse (Note 1) IDP 5
Drain power dissipation (Tc = 25°C) 1: Gate
PD 25 W
2: Drain
Single pulse avalanche energy 3: Source
EAS 93 mJ
(Note 2)
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Avalanche current IAR 2 A
Repetitive avalanche energy (Note 3) EAR DataSheet4U.com
4 mJ JEDEC ―

Channel temperature Tch 150 °C JEITA SC-67

Storage temperature range Tstg -55~150 °C TOSHIBA 2-10U1B

Weight : 1.7 g (typ.)

Thermal Characteristics

Characteristics Symbol Max Unit 2

Thermal resistance, channel to case Rth (ch-c) 5.0 °C/W

Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W

Note 1: Ensure that the channel temperature does not exceed 150℃.
1
Note 2: VDD = 90 V, Tch = 25°C（initial））, L = 41mH, RG = 25 Ω , IAR = 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

3

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2SK3767
Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 µA

Gate-source breakdown voltage V (BR) GSS IG = ±10 µA, VDS = 0 V ±30 ⎯ ⎯ V
Drain cut-off current IDSS VDS = 600 V, VGS = 0 V ⎯ ⎯ 100 µA
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 600 ⎯ ⎯ V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V
Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 1 A ⎯ 3.3 4.5 Ω
Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 1 A 0.8 1.6 ⎯ S
Input capacitance Ciss ⎯ 320 ⎯
Reverse transfer capacitance Crss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 30 ⎯ pF
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Output capacitance Coss ⎯ 100 ⎯

Rise time tr 10 V ID = 1A ⎯ 15 ⎯
VGS Output
0V
Turn-on time ton ⎯ 55 ⎯
Switching time RL =
ns

50 Ω
200 Ω
Fall time tf ⎯ 20 ⎯
VDD ∼
− 200 V
Turn-off time toff Duty <
= 1%, tw = 10 µs ⎯ 80 ⎯

Total gate charge Qg ⎯ 9 ⎯

VDD ∼
− 400 V, VGS = 10 V, ID = 2A ⎯ ⎯ nC
et4U.com Gate-source charge Qgs 5
DataShee
Gate-drain charge Qgd ⎯ 4 ⎯
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Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 2 A

Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 5 A
Forward voltage (diode) VDSF IDR = 2 A, VGS = 0 V ⎯ ⎯ −1.7 V
Reverse recovery time trr IDR = 2 A, VGS = 0 V, ⎯ 1000 ⎯ ns
Reverse recovery charge Qrr dIDR/dt = 100 A/µs ⎯ 3.5 ⎯ µC

Marking

K3767 Part No. (or abbreviation code)

Lot No.

A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

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2SK3767

ID – VDS ID – VDS
2 4
5.5 Common source 10
Tc = 25°C 6
10 6
5.25 Pulse test
1.6

(A)
Drain current ID (A)

ID
1.2 5
5.5

Drain current
2

0.8 4.75 5.25

5
4.5 1
0.4 4.75
Common source
VGS = 4V 4.5
Tc = 25°C
Pulse test VGS = 4V
www.DataSheet4U.com 0 0
0 4 8 12 16 20 24 0 4 8 12 16 20 24

Drain-source voltage VDS (V) Drain-source voltage VDS (V)

ID – VGS VDS – VGS

5 20
Common source
Common source
(V)

Tc = 25℃
VDS = 20 V
4 16 Pulse test
Drain current voltage VDS

Pulse test
Drain current ID (A)

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12

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2 8 ID = 2A

−55
Tc=100℃ 1
1 4 0.5

25

0 0
0 2 4 6 8 10 0 4 8 12 16 20

Gate-source voltage VGS (V) Gate－source voltage VGS (V)

⎪Yfs⎪ – ID RDS (ON) – ID

10 100
Common source
Forward transfer admittance⎪Yfs⎪ (S)

Tc = 25°C
Drain source ON resistance

Pulse test
Tc = −55°C
1
RDS (ON) (Ω)

100

25 10

0.1
VGS=10V

Common source
VDS = 20 V
Pulse test
0.01 1
0.01 0.1 1 10 0.01 0.1 1 10

Drain current ID (A) Drain current ID (A)

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2SK3767

RDS (ON) – Tc IDR – VDS

10 10
Common source Common source

(A)
VGS =10V Tc = 25°C
Drain-source ON resistance

8 pulse test Pulse test

Drain reverse current IDR

1
RDS (ON) (Ω)

6
ID=2A

4 1
0.1 10
0.5
3
2
1
VGS = 0, −1 V

www.DataSheet4U.com 0 0.01
-100 -50 0 50 100 150 200 0 −0.4 −0.8 −1.2 −1.6

Case temperature (°C) Drain-source voltage (V)

Capacitance – VDS Vth – Tc

1000 6
Common source
Ciss VDS = 10 V
5
(V)

ID = 1 mA
(pF)

Gate threshold voltage Vth

Pulse test
et4U.com 100 4
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Capacitance C

Coss 3
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10 2
Common source
Crss
VGS = 0 V 1
f = 1 MHz
Tc = 25°C
1 0
0.1 1 10 100 −80 −40 0 40 80 120 150

Drian-source voltage VDS (V) Case temperature Tc (°C)

Dynamic Input / output

PD – Tc characteristics
50 800 16
(W)

Drain-source voltage VDS (V)

VGS (V)

40 200V
Drain power dissipation PD

600 12

30 100V
Gate-source voltage

400 VDD = 400V 8

20

Common source
200 ID = 7.5 A 4
10
Tc = 25°C
Pulse test
0 0 0
0 40 80 120 160 0 2 4 6 8 10 12

Case temperature Tc (°C) Total gate charge Qg (nC)

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2SK3767

rth – tw
10

Normalized transient thermal impedance

3

1 Duty=0.5
rth (t)/Rth (ch-c)
0.2
0.3
0.1
0.1
0.05
PDM
0.02
0.03
t
SINGLE PULSE
0.01 T
0.01
www.DataSheet4U.com 0.003 Duty = t/T
Rth (ch-c) = 5℃/W
0.001
10μ 100μ 1ｍ 10ｍ 100ｍ 1 10

Pulse width tw (s)

Safe operating area EAS – Tch

200
100
(mJ)

160

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EAS

ID max (PULSED) *
10
100 µs * 120
Drain current ID (A)

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Avalanche energy

ID max (CONTINUOUS) *
80

1 DC OPERATION 1 ms *
Tc = 25°C 40

0
0.1 25 50 75 100 125 150
※ Single nonrepetitive pulse
Tc=25℃ Channel temperature (initial) Tch (°C)
Curves must be derated linearly with
increase in temperature.
VDSS max
0.01
BVDSS
1 10 100 1000 15 V
Darin-source voltage VDS (V) IAR
−15 V
VDD VDS

TEST CIRCUIT WAVE FORM

RG = 25 Ω 1 ⎛ B VDSS ⎞
Ε AS = ⋅ L ⋅ I2 ⋅ ⎜ ⎟
VDD = 90 V, L = 41mH 2 ⎜B − V ⎟
⎝ VDSS DD ⎠

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2SK3767

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et4U.com RESTRICTIONS ON PRODUCT USE 030619EAA

• The information contained herein is subject toDataSheet4U.com

change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.

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