BALIUAG UNIVE RSITY COLLEGE OF ENVIRONMENTAL DESIGN AND ENGINEERING "] ECTRONICS1 PLATE S BIPOLAR GUNCTION TRANSISTOR TER MELVIC JORGE s ls) -cose ENGR. JONATHAN F CARILLO PROFEScoR1) From memory, [Rama 8) using characterictic oF Fig. 3.184, determine Buc at Ip + OMA and Nes av 4) Bde = bY Bae de ©) Bde + Te is aoe + 32s 2 195 vom ie las] tad *Les, Aes, highest ot lowest \evels of Te 1) using the chavactevistics OF Fig. aI, determine Bac at Ty Gola and vce =v BD Bac s Alma = 2.3m 4omA ~ 20¢A AD Yes, highest art lowest tevel of Te. Be Boe Nee Bek Bae 4 | 3S 250A as os ay ] os b fe Das mA pes ioe Ww | 120 < [ 135 mA 135 ios 1ev | 24a Bde > Bac althouge ratio consiciert over scope OF cnovactevictice.4D Using she characteristics OF Tig, 218 ay determine Bde at Te 2oMA ond ven 210 } ie / e : ey aeiise 2 ee = 2) a Sa 2k 7 ee = Me ere Ti por [x= oa] - bie 2B Ts as ©) Be ee MO ea Be = 0-480 = 120 = 2mA 2 [uconal roaee Tes wo 7 (even [= -[eaaz] Te> 2mA + toute ® ZORA] We) An input voltage oF 2 Veme measured (From base to ground) is applied to ae circuit oF Fig: 3:21 Ve = Vi-Nee ae Nee tee = W-0 a iN = yan = Lav * hav aN WKoL I) Tor a transistor raving tne chowacieristic oF Fig) a3 Te qo Ile Nee Input chovacterictes: common- emitter input characteristics may be used directly For common collector calculations