SOT89 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR BFN18

ISSUE 3 - JANUARY 1996 ✪

COMPLEMENTARY TYPE - BFN19

C

PARTMARKING DETAIL - DE

E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 300 V
Collector-Emitter Voltage V CEO 300 V
Emitter-Base Voltage V EBO 5 V
Peak pulse Current I CM 500 mA
Continuous Collector Current IC 200 mA
Base Current IB 100 mA
Power Dissipation at T amb=25°C P tot 1 W
Operating and Storage Temperature Range T j:T stg -65 to +150 °C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base V (BR)CBO 300 V I C=100µA
Breakdown Voltage
Collector-Emitter V (BR)CEO 300 V I C=1mA*
Breakdown Voltage
Emitter-Base Breakdown V (BR)EBO 5 V I E=100µA
Voltage
Collector Cut-Off Current I CBO 100 nA V CB=250V
20 µA V CB=250V, T amb=150°C
Emitter Cut-Off Current I EBO 100 nA V EB=3V
Collector-Emitter V CE(sat) 0.5 V I C=20mA, I B=2mA
Saturation Voltage
Base-Emitter V BE(sat) 0.9 V I C=20mA, I B=2mA
Saturation Voltage
Static Forward Current h FE 25 I C=1mA, V CE=10V*
Transfer Ratio 40 I C=10mA, V CE=10V*
30 I C=30mA, V CE=10V*
Transition fT Typ. MHz I C=20mA, V CE=10V
Frequency 70 f=20MHz
Output Capacitance C obo Typ. pF V CB=30V,f=1MHz
1.5
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical characteristics graphs see FMMTA42 datasheet.

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