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1. General description
The 74HC40105 is a first-in/first-out (FIFO) "elastic" storage register that can store 16 4-bit
words. It can handle input and output data at different shifting rates. This feature makes it
particularly useful as a buffer between asynchronous systems. Each word position in the register
is clocked by a control flip-flop, which stores a marker bit. A logic 1 signifies that the data at that
position is filled and a logic 0 denotes a vacancy in that position. The control flip-flop detects
the state of the preceding flip-flop and communicates its own status to the succeeding flip-flop.
When a control flip-flop is in the logic 0 state and sees a logic 1 in the preceding flip-flop, it
generates a clock pulse. The clock pulse transfers data from the preceding four data latches into
its own four data latches and resets the preceding flip-flop to logic 0. The first and last control
flip-flops have buffered outputs. All empty locations "bubble" automatically to the input end,
and all valid data ripples through to the output end. As a result, the status of the first control
flip-flop (data-in ready output - DIR) indicates if the FIFO is full. The status of the last flip-flop
(data-out ready output - DOR) indicates whether the FIFO contains data. As the earliest data is
removed from the bottom of the data stack (output end), all data entered later will automatically
ripple toward the output. Inputs include clamp diodes that enable the use of current limiting
resistors to interface inputs to voltages in excess of VCC.
3. Ordering information
Table 1. Ordering information
Type number Package
Temperature range Name Description Version
74HC40105D -40 °C to +125 °C SO16 plastic small outline package; 16 leads; SOT109-1
body width 3.9 mm
Nexperia 74HC40105
4-bit x 16-word FIFO register
4. Functional diagram
1
1 FIFO 16 x 4 2
EN6 [IR] 2
14
OE 1Z2 [OR] 5
4 D0 Q0 13 CTR
3
5 D1 Q1 12 1 (+/C4) CT < 16 G1
9
CT = 0 CT > 0 G3
6 D2 Q2 11 15
3-
7 D3 Q3 10 3Z5
4 13
3 SI DOR 14 4D 6
5 12
15 SO DIR 2 6 11
MR 7 10
aaa-008737
9 aaa-008736
Fig. 2. IEC logic symbol
Fig. 1. Logic symbol
4 D0 Q0 13
5 D1 Q1 12
4 x 16
6 D2 DATA REGISTER Q2 11
7 D3 Q3 10
OE 1
2 DIR DOR 14
CONTROL LOGIC
3 SI SO 15
MR
9 aaa-008738
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MR
DOR
SO
SI
14 x
DIR
OE
D0 CL CL CL CL CL CL Q0
D1 Q1
4 4 4 3-STATE
LATCHES LATCHES LATCHES OUTPUT
D2 BUFFER Q2
D3 Q3
position 1 position 2 to 15 position 16
aaa-008739
(1) LOW on S input of FF1 and FF5 sets Q output to HIGH independent of state on R input.
(2) LOW on R input of FF2, FF3 and FF4 sets Q output to LOW independent of state on S input.
Fig. 4. Logic diagram
5. Pinning information
5.1. Pinning
74HC40105
OE 1 16 VCC
DIR 2 15 SO
SI 3 14 DOR
D0 4 13 Q0
D1 5 12 Q1
D2 6 11 Q2
D3 7 10 Q3
GND 8 9 MR
aaa-008740
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6. Functional description
Master-reset (MR)
When MR is HIGH, the control functions within the FIFO are cleared, and date content is declared
invalid. The data-in ready (DIR) flag is set HIGH and the data-out-ready (DOR) flag is set LOW.
The output stage remains in the state of the last word that was shifted out, or in the random state
existing at power-up.
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74HC40105 All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
rates of the shift-in/shift-out inputs. Burst rates of 35 MHz can be obtained. Shift pulses can
be applied without regard to the status flags but shift-in pulses that would overflow the storage
capacity of the FIFO are not allowed (see Fig. 11 and Fig. 12).
7. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
VCC supply voltage -0.5 +7 V
IIK input clamping current VI < -0.5 V or VI > VCC + 0.5 V [1] - ±20 mA
IOK output clamping current VO < -0.5 V or VO > VCC + 0.5 V [1] - ±20 mA
IO output current VO = -0.5 V to (VCC + 0.5 V) - ±25 mA
ICC supply current - +50 mA
IGND ground current -50 - mA
Tstg storage temperature -65 +150 °C
Ptot total power dissipation [2] - 500 mW
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For SO16 packages: above 70 °C the value of Ptot derates linearly with 8 mW/K.
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9. Static characteristics
Table 5. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 °C -40 °C to -40 °C to Unit
+85 °C +125 °C
Min Typ Max Min Max Min Max
VIH HIGH-level VCC = 2.0 V 1.5 1.2 - 1.5 - 1.5 - V
input voltage VCC = 4.5 V 3.15 2.4 - 3.15 - 3.15 - V
VCC = 6.0 V 4.2 3.2 - 4.2 - 4.2 - V
VIL LOW-level VCC = 2.0 V - 0.8 0.5 - 0.5 - 0.5 V
input voltage VCC = 4.5 V - 2.1 1.35 - 1.35 - 1.35 V
VCC = 6.0 V - 2.8 1.8 - 1.8 - 1.8 V
VOH HIGH-level VI = VIH or VIL
output voltage IO = -20 μA; VCC = 2.0 V 1.9 2.0 - 1.9 - 1.9 - V
IO = -20 μA; VCC = 4.5 V 4.4 4.5 - 4.4 - 4.4 - V
IO = -20 μA; VCC = 6.0 V 5.9 6.0 - 5.9 - 5.9 - V
IO = -4 mA; VCC = 4.5 V 3.98 4.32 - 3.84 - 3.7 - V
IO = -5.2 mA; VCC = 6.0 V 5.48 5.81 - 5.34 - 5.2 - V
VOL LOW-level VI = VIH or VIL
output voltage IO = 20 μA; VCC = 2.0 V - 0 0.1 - 0.1 - 0.1 V
IO = 20 μA; VCC = 4.5 V - 0 0.1 - 0.1 - 0.1 V
IO = 20 μA; VCC = 6.0 V - 0 0.1 - 0.1 - 0.1 V
IO = 4 mA; VCC = 4.5 V - 0.15 0.26 - 0.33 - 0.4 V
IO = 5.2 mA; VCC = 6.0 V - 0.15 0.26 - 0.33 - 0.4 V
II input leakage VI = VCC or GND;VCC = 6.0 V - - ±0.1 - ±1.0 - ±1.0 μA
current
IOZ OFF-state VI = VIH or VIL; - - ±0.5 - ±5.0 - ±10.0 μA
output current VO = VCC or GND; VCC = 6.0 V
ICC supply current VI = VCC or GND; IO = 0 A; - - 8 - 80 - 160 μA
VCC = 6.0 V
CI input - 3.5 - - - - - pF
capacitance
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74HC40105 All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
74HC40105 All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
74HC40105 All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
MR input (2) VM
tW
tPLH
DIR output VM
(3)
(1) tPHL
(4)
DOR output VM
aaa-008742
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SI input (2) VM VM
(5) (6)
tPHL tW
(1)
DIR output VM
(3) (4) (7)
Dn input
aaa-008743
SO INPUT (2) VM
SI INPUT (1) VM
(5)
tPLH tW
bubble - up
delay
DIR OUTPUT VM
(3) (4)
mga660
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SO INPUT VM
tPLH tPHL
90 % 90 %
Qn OUTPUT VM
10 % 10 %
tTLH tTHL
mga664
SO input (2) VM VM
(3) (6)
tW
tPLH tPLH
(1) (5)
DOR output VM VM
(4) (7)
aaa-008744
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1/fmax
tW
SI INPUT VM
Dn INPUT
DIR OUTPUT
mga662
1/fmax
tW
SO INPUT VM
Qn OUTPUT
DOR OUTPUT
mga663
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Sl input (2) VM
tPLH tPHL
tW
ripple through
delay
tPHL/tPLH
Qn output (4)
aaa-008745
MR to SI recovery time
MR input VM
trec
SI input VM
aaa-008746
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VI
OE input VM
GND
tPLZ tPZL
VCC
Qn output
LOW-to-OFF VM
OFF-to-LOW
VX
VOL
tPHZ tPZH
VOH
VY
Qn output
HIGH-to-OFF VM
OFF-to-HIGH
GND
outputs outputs outputs
enabled disabled enabled
001aah078
Dn INPUT VM
tsu tsu
th th
SI INPUT VM
mga657
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tW
VI
90 %
negative
pulse VM VM
10 %
0V
tf tr
tr tf
VI
90 %
positive
pulse VM VM
10 %
0V
tW
VCC VCC
VI VO RL S1
G DUT open
RT CL
001aad983
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MR MR OE OE
DIR DOR
SI SO
74HC40105
MR OE
aaa-008747
The 74HC40105 is easily expanded to increase word length. Composite DIR and DOR flags are formed with the
addition of an AND gate. The basic operation and timing are identical to a single FIFO, except for an added gate
delay on the flags.
Fig. 18. Expanded FIFO for increased word length; 16 words x 8 bits
4 Dn Qn 4
Q D DIR DOR
composite 74HC74 74HC40105
DIR SI
CP SO
composite
Q
MR OE DOR
Q D
74HC74
CP DIR DOR
Q R
SI SI SO SO
74HC40105
MR MR OE OE
4 Dn Qn 4
aaa-008748
This circuit is only required if the SI input is constantly held HIGH, when the FIFO is empty and the automatic
shift-in cycles are started (see Fig. 8).
Fig. 19. Expanded FIFO for increased word length
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FIFO A FIFO B
74HC40105 74HC40105
MR OE MR OE
MR
OE aaa-008749
The 74HC40105 is easily cascaded to increase word capacity without external circuitry. In cascaded format, the
FIFOs handle all necessary communications. Fig. 18 and Fig. 20 demonstrate the communication timing between
FIFO A and FIFO B. Fig. 23 provides an overview of pulses and timing of two cascaded FIFOs, when shifted full
and shifted empty again.
Fig. 20. Cascading for increased word capacity; 32 words x 4 bits
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DIRA VM
SIA VM (2)
ripple through
delay
(4)
DORA/SIB VM
QnA/DnB (3)
ripple through
delay
DORB (7) VM
QnB
aaa-008750
(1) FIFO A and FIFO B are initially empty, SOA held HIGH in anticipation of data
(2) Load one word into FIFO A; SI pulse; applied. results in DIR pulse
(3) Data-out A/ data-in B transition; valid data arrives at FIFO A output stage after a specified delay of the DOR
flag, meeting data input set-up requirements of FIFO B.
(4) DORA and SIB pulse HIGH; (ripple through delay after SIA LOW) data is unloaded from FIFO A as a result of
the data output ready pulse, data is shifted into FIFO B
(5) DIRB and SOA go LOW; flag indicates that input stage of FIFO B is busy, shift-out of FIFO A is complete
(6) DIRB and SOA go HIGH automatically; the input stage of FIFO B is again able to receive data, SO is held
HIGH in anticipation of additional data
(7) DORB goes HIGH; (ripple through delay after SIB LOW) valid data is present one propagation delay later at
the FIFO B output stage
Fig. 21. FIFO to FIFO communication; input timing under empty condition
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DORB VM
SOB VM (2)
bubble - up
delay
(3)
DIRB/SOA VM
QnA/DnB
bubble - up
delay
(6)
DIRA VM
aaa-008751
(1) FIFO A and FIFO B initially empty, SIB held HIGH in anticipation of shifting in new data as an empty location
bubbles-up
(2) Unload one word from FIFO B; SO pulse applied, results in DOR pulse
(3) DIRB and SOA pulse HIGH; (bubble-up delay after SOB LOW) data is loaded into FIFO B as a result of the
DIR pulse, data is shifted out of FIFO A
(4) DORA and SIB go LOW; flag indicates that the output stage of FIFO A is busy, shift-in of FIFO B is complete
(5) DORA and SIB go HIGH; flag indicates that valid data is again available at FIFO A output stage, SIB is held
HIGH, awaiting bubble-up of empty location.
(6) DIRA goes HIGH; (bubble-up delay after SOA LOW) an empty location is present at input stage of FIFO A
Fig. 22. FIFO to FIFO communication; output timing under full condition
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(3) (4)
QnB output
(9)
QnA output
(10)
DnA input
MR input
aaa-008752
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74HC40105 All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
SO16: plastic small outline package; 16 leads; body width 3.9 mm SOT109-1
D E A
X
y HE v M A
16 9
Q
A2
(A 3) A
A1
pin 1 index
θ
Lp
1 8 L
e w M detail X
bp
0 2.5 5 mm
scale
Note
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
99-12-27
SOT109-1 076E07 MS-012
03-02-19
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13. Abbreviations
Table 9. Abbreviations
Acronym Description
CMOS Complementary Metal-Oxide Semiconductor
DUT Device Under Test
ESD ElectroStatic Discharge
FIFO First In First Out
HBM Human Body Model
MM Machine Model
MSB Most Significant Bit
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15. Legal information suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
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Draft — The document is a draft version only. The content is still under the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Ordering information....................................................1
4. Functional diagram.......................................................2
5. Pinning information......................................................3
5.1. Pinning.........................................................................3
5.2. Pin description............................................................. 4
6. Functional description................................................. 4
6.1. Inputs and outputs.......................................................4
6.2. Data input.................................................................... 5
6.3. Data transfer................................................................5
6.4. Data output.................................................................. 5
6.5. High-speed burst mode............................................... 5
6.6. Expanded format......................................................... 6
7. Limiting values............................................................. 6
8. Recommended operating conditions..........................6
9. Static characteristics....................................................7
10. Dynamic characteristics............................................ 8
10.1. Waveforms and test circuit...................................... 11
11. Application information............................................18
11.1. Expanded format......................................................19
12. Package outline........................................................ 24
13. Abbreviations............................................................ 25
14. Revision history........................................................25
15. Legal information......................................................26
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