Modulation-doped β-(Al0.2Ga0.

8)2O3/Ga2O3
field-effect transistor
Cite as: Appl. Phys. Lett. 111, 023502 (2017); https://doi.org/10.1063/1.4993569
Submitted: 24 April 2017 . Accepted: 25 June 2017 . Published Online: 12 July 2017

Sriram Krishnamoorthy, Zhanbo Xia, Chandan Joishi, Yuewei Zhang, Joe McGlone, Jared Johnson, Mark
Brenner, Aaron R. Arehart, Jinwoo Hwang, Saurabh Lodha, and Siddharth Rajan

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Paper published as part of the special topic on The Dawn of Gallium Oxide Microelectronics

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 APPLIED PHYSICS LETTERS 111, 023502 (2017)

Modulation-doped b-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

Sriram Krishnamoorthy,1,a),b) Zhanbo Xia,1,a),b) Chandan Joishi,1,2 Yuewei Zhang,1
Joe McGlone,1 Jared Johnson,3 Mark Brenner,1 Aaron R. Arehart,1 Jinwoo Hwang,3
Saurabh Lodha,2 and Siddharth Rajan1,3,b)
1
Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA
2
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India
3
Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA
(Received 24 April 2017; accepted 25 June 2017; published online 12 July 2017)
Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling
properties for high performance transistors. We report the realization of a modulation-doped two-
dimensional electron gas (2DEG) at the b-(Al0.2Ga0.8)2O3/Ga2O3 heterojunction by silicon delta
doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A
modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The
demonstration of modulation doping in the b-(Al0.2Ga0.8)2O3/Ga2O3 material system could enable
heterojunction devices for high performance electronics. Published by AIP Publishing.
[http://dx.doi.org/10.1063/1.4993569]

Beta-Gallium Oxide1,2 (GO) is a promising ultra-wide solution combustion synthesis28 and pulsed laser deposition.29
band gap material with a band gap of 4.6 eV. Its large band Evidence of modulation doping at the AGO/GO heterojunc-
gap and availability of bulk substrates grown using melt- tion using unintentional doping of the AGO layer has also
based growth techniques3–12 make it attractive for high been reported.30 In this work, we report on the electrical char-
power,13 high frequency, and optoelectronic14,15 applica- acteristics of a delta modulation-doped epitaxial AGO/GO
tions. Field effect transistors16–21 and diodes with a break- heterostructure and demonstrate an AGO/GO modulation-
down of up to 1 kV (Ref. 22) have been demonstrated by doped field effect transistor (MODFET).
several groups using both beta and other polymorphs of GO. An AGO/GO modulation-doped heterostructure [epitax-
Most transistor results in this material system16–21 have been ial stack shown in Fig. 1(a)] was grown on Fe-doped (010)
based on field-effect transistors with relatively thick chan- b-Ga2O3 semi-insulating substrates.31 The epitaxial structure
nels, using Schottky or metal-oxide gate structures for charge consisted of a 125 nm unintentionally-doped (UID) GO
modulation. However, as in conventional III-V semiconduc- buffer layer and a 21 nm AGO barrier layer with delta doping
tors, two-dimensional electron gas (2DEG) channels provide in the AGO barrier. The AGO spacer layer with a thickness
several advantages for scaling of devices and for higher of 3 nm was used to maximize the modulation doping effi-
mobility.23 In particular, in the case of GO, where the room- ciency. Before initiating the growth, the substrate was heated
temperature bulk mobility is relatively low, the screening of up to 800  C to remove adsorbed impurities on the substrate
phonon scattering in high density 2D electron gases has been to avoid any parasitic channel in the buffer layer. The sample
predicted to lead to significantly higher mobility.24 This high was grown32 by oxygen plasma-assisted molecular beam epi-
mobility combined with the vertical scaling enabled by taxy using a Ga flux of 8  108 Torr, an oxygen plasma
2DEGs would be very beneficial for a range of high perfor-
mance device applications that exploit the large band gap of
GO. Recently, such a scaled thin channel approach using
delta impurity doping was used to realize a delta-doped
FET25 with high transconductance and current density. A
modulation-doped structure would enable higher mobility
than a delta-doped layer by reducing the effect of impurity
scattering.
Al2O3 is stable in the corundum polytype, while Ga2O3
has multiple polytypes, with the monoclinic crystal structure
(b-Ga2O3) being the most stable. Alloying of Al with b-
Ga2O3 to realize b-(AlxGa1x)2O3 (AGO) has been investi-
gated,26 and the Al2O3 mole fraction as high as 61% was
reported while maintaining the phase purity for molecular
beam epitaxy-grown films.27 An Al2O3 mole fraction of up
to 80% has been reported for AGO powders prepared by
FIG. 1. (a) Epitaxial structure, (b) high resolution X-ray diffraction charac-
a)
S. Krishnamoorthy and Z. Xia contributed equally to this work. terization, (c) atomic force microscopy image of a typical sample surface,
b)
Authors to whom correspondence should be addressed: krishnamoorthy. and (d) cross-sectional STEM image of AGO/GO MODFET grown on an
13@osu.edu; xia.104@osu.edu; and rajan.21@osu.edu insulating Fe-doped GO substrate.

0003-6951/2017/111(2)/023502/4/$30.00 111, 023502-1 Published by AIP Publishing.

023502-2 Krishnamoorthy et al.
power of 300 W, and a chamber pressure of 1.5  105 Torr.
AGO was grown33 using an Al flux of 1.6  108 Torr while
keeping Ga flux at 8  108 Torr. For the delta-doped layer,
the Si shutter was opened for 7 s (0.25 nm), with the Si cell
temperature set to 925  C. While multiple delta-doped layers
were used to achieve high charge density in our earlier
report,25 we used a single sheet of a delta-doped layer with a
lowered target doping density of 9.5  1012 cm2 in this
work. The doping density was lowered to enable the complete
modulation of the 2DEG charge. High resolution X-ray dif-
fraction (HRXRD) measurements was used to determine the
composition of the AGO barrier layer [Fig. 1(b)]. Assuming
pseudomorphic growth, the peak separation between the
AGO and the GO peak was used to determine the Al compo-
sition34 of the AGO barrier layer as 20%. The full width half
maximum (FWHM) value of the AGO peak was measured to
be 0.24 , which is higher than the typical thickness-related
broadening observed in AlGaN/GaN heterostructures for the
same barrier layer thickness (0.2 FWHM for the AlGaN
peak), indicating that the crystalline quality of the AGO layer
can be improved further. Atomic force microscopy [Fig. 1(c)]
indicates the smooth surface morphology with an rms rough-
ness of 0.7 nm. The cross-sectional scanning transmission
electron microscopy (STEM) image of a sample grown using
identical growth conditions is shown in Fig. 1(d). The STEM
image clearly shows the presence of the AGO/GO heterojunc-
tion with a nominal thickness in the range of 20–21 nm for
the AGO layer.
Ohmic contacts were formed using a side-metal contact,
where the ohmic regions were etched down to 40 nm, and a
thick Ti (60 nm)/Au (50 nm)/Ni (100 nm) metal was depos-
ited and annealed at 470  C in N2 ambient for 1 min in a
rapid thermal anneal system. Mesa isolation was carried out
using BCl3-based inductively coupled plasma reactive ion
etching (ICP-RIE) etch, and the gate metal stack of Ni/Au/Ni
was deposited on the sample surface to form a Schottky bar-
rier contact. Hall measurements were carried out using pat-
terned van der Pauw structures, and sheet charge density of
5  1012 cm2 and mobility of 74 cm2/V s were measured
(sheet resistance of 16.7 kX/sq.).
Capacitance-voltage characterization [Fig. 2(a)] (10 kHz)
showed characteristic accumulation behavior, indicating the
presence of a 2D electron gas. A total sheet charge density of
8.5  1012 cm2 was extracted from the CV curve. The anti-
clockwise hysteresis of approximately 0.1 V was observed in
double-sweep CV measurements, suggesting the motion of
charged ions or defects within the structure. Further character-
ization is required to understand the observed hysteresis
behavior. No frequency dispersion was observed between CV
measurements at 1 kHz and 10 kHz. CV measurements could
not be performed at higher frequencies due to the high series
resistance in this structure.
The discrepancy between the charge density measured
using Hall measurements and the CV charge is attributed to
the incomplete ionization of donors in AGO at equilibrium
(VGS ¼ 0 V). Delta doping in the AGO barrier layer results in
the reduction of separation between the AGO conduction
band edge and the fermi level. This results in a reduced
energy difference between the donor energy level and the
fermi level, leading to incomplete ionization of donors
Appl. Phys. Lett. 111, 023502 (2017)
FIG. 2. (a) Experimental capacitance-voltage characteristics of AGO/GO
MODFET and (b) apparent electron concentration profile extracted from CV
measurements for dielectric constant values of 10 and 13.
at equilibrium. When a negative gate bias is applied, the con-
duction band in the delta-doped AGO layer and the donor
energy level are pulled up relative to the fermi level, result-
ing in the increased ionization of donors. The donor ioniza-
tion process continues with increased negative bias until all
the donors are completely ionized. When the donors are
completely ionized, a further increase in negative gate bias
voltage depletes the 2DEG at the heterojunction. Hence, CV
characterization is expected to overestimate the 2DEG equi-
librium charge density. Furthermore, the modulation of the
ionized donors with gate bias results in a parasitic capaci-
tance parallel to the 2DEG capacitance, affecting the extrac-
tion of 2DEG characteristics (charge location) exclusively
from CV measurements.
The apparent charge concentration profile extracted from
CV characteristics is shown in Fig. 2(b). We have taken into
account the spread of the dielectric constant [10 (Refs. 35 and
36)–13 (Ref. 37)] reported in the literature. It should be noted
that the dielectric constant of GO/AGO along the (010) orien-
tation has not been characterized yet. The charge profile
extracted from the CV measurements clearly shows charge
confinement. The location of the apparent charge profile peak
(assuming er ¼ 13) at the dopant site is due to the effect of the
parasitic capacitance resulting from donor ionization, which
is confirmed from CV simulation explained below.
The equilibrium energy band diagram [Fig. 3(a)] was cal-
culated using self-consistent Schrodinger-Poisson simulations
(bandeng),38 for a nominal Al2O3 mole fraction of 20% for
the AGO barrier. Material parameters (e—relative permittiv-
ity, m*e—effective electron mass, UB—AGO surface barrier,
and DEc—AGO/GO conduction band offset) were based on
previous experimental and theoretical estimates and are listed
in Table I. The Schottky barrier height was extracted to be
1.4 eV using internal photoemission measurements [Fig. S1
023502-3 Krishnamoorthy et al.
FIG. 3. (a) Equilibrium energy band diagram and 2DEG charge profile of
AGO/GO MODFET; Inset: Conduction band profile showing the donor level
ED in AGO. (b) Experimental and simulated CV characteristics.
see the supplementary material]. The calculated equilibrium
sheet charge (5  1012 cm2) matches well with the experi-
ment (Hall measurement) if an AGO/GO conduction band
offset of 0.6 eV and a donor energy level of 135 meV (EC-ED)
are assumed in AGO. This would indicate that the band gap
difference27 appears completely as the conduction band offset
at the AGO/GO heterojunction. The Si donor sheet density in
the delta-doped layer was set to be 9.5  1012 cm2. The sim-
ulated CV curve matched well with the experiments when the
dielectric constant was assumed to be 13.37 Further detailed
experiments are required to measure band offsets, donor
energy level in AGO and dielectric constant of AGO.
Electrical characteristics of the AGO/GO MODFET is
shown in Fig. 4. Due to the non-ohmic source/drain contacts
(Fig. S2 in the supplementary material) and high contact
resistance, the transistor characteristics were measured on
I-shaped structures consisting of wide source/drain contact/
access regions (Wcontact ¼ 100 lm) and a narrow channel
region (Wchannel ¼ 2 lm) [Fig. 4(a)]. The maximum current
TABLE I. Material parameters used for AGO/GO band diagram simulation.
Material property Value
Ga2O3 bandgap 4.6 eV
(Al0.2Ga0.8)2O3 bandgap 5.2 eV (Ref. 29)
DEc 0.6 eV
e 10 (Refs. 35 and 36)–13 (Ref. 37)
EC-ED 135 meV
m*e 0.27
UB 1.4 eV
Appl. Phys. Lett. 111, 023502 (2017)
FIG. 4. (a) Output characteristics and (b) transfer characteristics of AGO/
GO MODFET sample C showing FET operation with charge modulation,
pinch-off, and a high ON/OFF ratio.
[Fig. 4(a)] normalized with respect to the channel width was
measured to be 5.5 mA/mm. Measurements on devices with
different channel width and length dimensions clearly indi-
cate that the measured current density is rather limited by the
contacts (Fig. S3 and Table S1). The pinch-off voltage of
3 V measured in the transfer characteristics [Fig. 4(b)] was
similar to the pinch-off voltage in the CV characteristics,
and an on-off ratio of 2.5  105 was obtained. A peak trans-
conductance of 1.75 mS/mm was measured. While this
report of modulation doping in such a transistor structure
shows the feasibility of this approach, further growth optimi-
zation would be needed to achieve the optimal mobility.
In summary, we report modulation-doped (Al0.2Ga0.8)2O3/
Ga2O3 heterostructures with the evidence of carrier transfer
from the (Al0.2Ga0.8)2O3 layer to the Ga2O3 layer. Further
work on improving the transport and resistance in such devices
could enable the realization of high performance heterostruc-
ture devices based on the AGO/GO material system.
See supplementary material for internal photoemission
characterization of the Ni/(Al0.2 Ga0.8)2O3 barrier height,
source/drain contact characterization, and the effect of the
device width and length on maximum drain current of AGO/
GO MODFET.
We acknowledge funding from the Office of Naval
Research under Grant No. N00014-12-1-0976 (EXEDE
MURI). The project or effort depicted was or is sponsored by
the Department of the Defense, Defense Threat Reduction
Agency (Grant HDTRA11710034). The content of the
information does not necessarily reflect the position or the
policy of the federal government, and no official endorsement
should be inferred. We acknowledge funding from The Ohio
State University Institute of Materials Research (IMR)
Multidisciplinary Team Building Grant. We thank Air Force
Research Laboratory, WPAFB, Dayton Ohio for support.
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