M.Sc. Physics: Manonmaniam Sundaranar University

Laboratory Manual for Practical Courses
M.Sc. Physics
Directorate of Distance and Continuing Education

Manonmaniam Sundaranar University
Tirunelveli – 627012
November 2020
II-year M.Sc. Physics Practical Experiments (DD&CE) 2021
Practical III: Non-Electronics (DKPP3)
Contents Page no.
1 Dielectric Constant 3
2 Cauchy‟s Constant 6
3 Resistivity – Four Probe Method 11
4 Hall effect – Determination of Hall coefficients 14
5 Ultrasonic interferometer – velocity of ultrasonic waves in liquid 17
2
1. DIELECTRIC CONSTANT
Aim:
To measure the dielectric constant as a function of temperature and to find the curie
temperature of the given material.
Apparatus Required:
Dielectric cell, Dielectric material, Capacitance, Various AC voltmeter, Temperature

indicators etc.
Formula:
C = εA/t Farad
= εo εr A/t
ε r = C/Co
Co = εo A/t Farad
Where,
C – Capacitance using in material of the dielectric.
Co – Capacitance using vacuum as the dielectric.
εo -- Permittivity of free space
A – Area of the plate / Sample cross section area (m2)
εr – (= ε /εo) Relative permittivity,
Theory:
Dielectric or electrical insulating materials are the materials in while electrostatic fields can
persists for a long time. The use of a dielectric in a capacitor presents several advantages. The
simplest of these is that the conducting plates can be placed very close to one another without risk
of contact. Also if subjected to a very high electric field any substance will ionize and become a
conductor. Dielectrics are more resistant to ionization then air, so a capacitor containing a
dielectric can be subjected to a higher voltage. Thus the materials with high DC are useful in the
manufacturer of high value. Capacitor Dielectric material can be solids, liquids or gases.
(eeamples) glass, kerosene, Dry air. Dielectric constant is the ratio of the capacitance © at a
capacitor filled with the dielectric medium to the capacitance (Co) of the capacitance without the
presence of the dielectric medium.
Dielectric constant εr = C/Co
3
The dielectric constant shows on peak at the Curie point. The measurement of the dielectric
constant as a function of temperature helps to estimate the Curie point.
All the ferroelectric materials (such as BaTiO3) have a transition temperature and it is called
Curie temperature. At the particular temperature the capacitance of the ferroelectric materials
(BaTiO3) will suddenly changes to a maximum value. The corresponding temperature, where the
sudden change in capacitance, is called the phase transistion temperature.
Procedure:
Put a small piece of aluminum foil on the base plate. Pull the spring loaded probes upward
insert the aluminum foil and let them rest on it. Put the sample (BaTiO3) on the foil. Again pull the
top of the proper and insert the sample below if and let it rest on it gently. Now one of the probes
would be in contact with the lower surface through aluminum foil.
Connect the probe leads to the capacitance connect the oven to the main unit and put oven
in off position. Switch on the main unit and note the values of capacitance. It should be a stable
reading and is obtained directly in pf. Switch on the temperature controller and set the temperature
the green LED would light up indicating the oven is ON and the temperature would start raising.
The controller of the oven would switch ON/OFF power corresponding to set temperature.
Due to thermal inertia of oven there could be some overheat of undershoot before steady
temperature and many take minutes for each reading.
The temperature continues to start rising and take reading for every two minutes. After if
reaches the Curie point there will be sudden change in temperature at temperature at this state is
very low.
Result:
The dielectric constant of the given material (Barium Titanate) found out for the various
temperatures. Curie temperature of the given sample (BaTiO3) also measured from cooling and
heating curves.
(i) Heating Tc = 132° C

(ii) Cooling Tc = 132° C
4
Table for measurement:
Dielectric Constant
Capacitance in pf ε r = C/Co
Temperature in ° C
Heating Cooling Heating Cooling
5
2. CAUCHY’S CONSTANT
Aim:
To find the Cauchy‟s constant for the material of the given prism
Formula:
(i) Refractive index
A → Angle of the prism

D→Angle of minimum deviation
(ii) Nm=sin
m2
m2
Where,
µ1, µ2→ Refractive indices of the prism corresponding to 1 and 2.
1 and 2 are wavelengths. A and B are constants.
Apparatus
Spectrometer, Prism and white light source.
Procedure
The preliminary adjustments of the spectrometer are made. The slit of the collimator is
illuminated with a mercury lamp. The vernier disc is kept fixed throughout the experiment.
6
(i) Determination of the angle of prism
The prism is placed on the prism table with the refracting edge at the centre of the table
facing the collimator. The reflecting faces are kept symmetrical with respect to the axis of the
collimator. The rays from the collimator falling on the faces of the prism get reflected. The
telescope is turned to see the reflected mage from one polished face of the prism. The telescope is
fixed and the tangential screw is adjusted so that the junction of the cross-wire comes to the middle
of the reflected image of the slit. The main scale reading and the vernier reading are noted. The
total reading R1 in vernier (A) is found. The reading R2 on the other vernier (B) also noted.
The telescope is released and it is turned to see the reflected image from the other face of
the prism and the reading R2 as before is noted from A and B.
The angle of the prism is calculated from the relation.
2A = R1 ~ R2
(ii) Determination of angle of minimum deviation:
The direct ray readings are taken as R1. The prism is mounted on the prism table in such a
way that the light falls on its second face. The telescope is turned to view the spectrum always in
the field at view. The prism table is rotated, so that the spectrum moves towards the direct ray
position and bring to reflect its path.
The prism is set in the minimum deviation position corresponding to the prominent green
line of the mercury spectrum. The point of the intersection of the cross wire is made to coincide
with the fixed edge of the green image of the slit and telescope readings are taken as R2, R2 ~ R1
gives D. the prism is set for the various other lines of the mercury spectrum. In each case, the angle
of minimum deviation D and refractive index are calculated.
Determination of Cauchy‟s constant
The relation between the refractive index and the wavelength  is given by the formula
=(A+D)/2, where A,B are known Cauchy‟s constants. To determine A and B, the wavelength ---
for the prominent lines of the mercury spectrum should be found. Their wavelength can be
determined by using a grating at a normal incidence on its own minimum deviation position and
the constants are noted in a table. A graph is plotted for  and 1/2. It is a straight line.
7
Observation and Calculation

(i) To find the least count of the spectrometer
Value of IMSD = 30‟

Least count = 1/n x 1MSD = 1‟/30‟ x 30‟ = 1‟
(ii) To find the angle of the prism A
Telescope reading at the Difference
Difference in
Reflected image in ver A
Trial ver B Mean
Face 1 (R1) Face II (R2) Reading Reading (2A)
No 2A
(2A)
Vernier Vernier Vernier Vernier R1 ~ R2
A B A B R1 ~ R2
2A = …………..
A=……….……..
To find the refractive index

Direct ray reading
Ver A =
Ver B =
Minimum
Difference
deviation ray
Colour Mean D
Ver A Ver B Ver A Ver B
Violet
Blue
Bluish green
Green
Yellow
Orange
Red
8
(iii)To find wavelength of the prominent lines of the mercury spectrum
Direct ray Difference =Sin/Nm

Mean
Colour Ver Ver Ver Ver 
2
A B A B 10-10m
Violet
Blue
Bluish green
Green
Yellow
Orange
Red
(iv) To find Cauchy‟s constant

Pair of colours 1 2 1 10-10 2 10-10 A B  10-14
Violet – green
Blue – yellow
Green - orange
Mean =
9
Model graph
1/2 m2
(v) To find Cauchy‟s constant from graph

Colour 1  10-7m 2 10-14 m2 1/2  10-14 m-2 
Violet
Blue
Bluish green
Green
Yellow
Orange
Red
Result:
The experimental values of the wavelength of different colours of the spectrum

agrees with that of theoretical values. The Cauchy‟s constant
From observation A = -----------------------------

B = ------------------------------
From graph A = ------------------------------

B = -------------------------------
10
3. FOUR PROBE – MEASUREMENT OF RESISTIVITY
Aim:
i) To find the resistivity of the given semiconductor material.

ii) To find the band gap energy for the given sample.
Apparatus:
Milliammeter, Voltmeter, oven, semiconductor material to be used, thermometer, four

probe setup.
Formula:
V
i) Resistivity 0 = 2S m
I
I
Conductivity  = 2S -1m-1
V
Corrected resistivity  = 0 / G7(W/S) = 0/4.159
Where
I  current applied to the probes
V  Voltage between the probes
S  spacing between the probes
Wthickness of the specimen
log 
ii) Band gap energy Eg = 2.303  2  K B 
1T
where
KB  Boltzmann‟s constant
T  Temperature in Kelvin
Theory:
Four probe method:
Measurement of resistivity of Ge crystal is made to determine the suitability for the

fabrication of transistor of other semiconductor devices. The resitivity has to be measured very
accurately. Since its value is critical in many devices. Some transistor parameters like the
equivalent base resistance are at least linearly related to resistivity.
11
There are many methods for making resistivity measurement. But the standard and accurate
method is four probe method. In its usual form, the four probes are collinear and current flows to
the outer pair contacts and the potential across the inner pair is measured. If the flat surface in
which the probe rest is adequately large of the crystal is big. The semiconductor may be considered
to be a semi infinite volume. To present minority carrier injection and make good contacts the
surface on which the probe rest may be mechanically lapped.
Procedure:
First take out the four probe arrangement from the oven and put it on a plane surface. Now
put the sample on the circular base plate of the four probe arrangement such that the non-
conducting surface of the crystal should be on the plate side and four probe are in the middle of the
crystal. Apply some pressure slightly on the pipe. So that it clearly makes the contacts with the
sample and tighter the screw. Now check the continuity between the sample and four probe by the
multimeter.
1. If the contacts are loose, tighter the three screws provided on the top of the base stand till
the four probes touch the crystal.
2. Put the thermometer in the probe provided in four probes arrangement to measure the oven
temperature.
3. Put the four probe arrangement in the oven and check the continuity between the each pair
of leads again.
4. Connected the green leads to the output terminals of the constant current source. Marked
current and the range leads to the input terminals of the digital voltmeter marked “voltage”.
5. Connect the setup to the a.c. mains and switch on.
6. Put the selector switch in current position and range multipliers. Switch at x1 position
adjust current to zero with the help of current adj. knob change the selector switch in
voltage position and adjust zero in DVM of shorting the voltage.
7. Again change the selector switch in current position and apply some current say 5mA with
the help of current adj. knob and note that reading. Further change the selector switch. In
voltage position and range multiplier. Switch in x10 range and note the corresponding
voltage in DVM. Also note the corresponding temperature in thermometer. Record these
readings in the table change the range multiplier switch in the range when the voltage
reading reaches below 20mV. Check the current value by changing the selector switch. It
must be fixed.
12
8. Connected the oven with the oven supply and adjust the oven supply switch in 1st position.
9. Measure voltage for different values of temperature. Keeping the current constant. Record
these readings.
10. Repeat the experiment for different values of current.
The conductivity of the semiconductor material is calculated by
 = 0 / G7(W/S) = 0/4.159 s/m
The band gap energy of the given semiconductor material is found out by using the formula
log 
Eg = 2.303  2  K B  eV
1T
Result:
1. Resistivity of a semiconductor material sample with temperature is studied.

As temperature increases, resistivity decreases. The resistivity is -------------.
2. Band gap energy of the semiconductor material (Eg) is ------------.
13
4. HALL EFFECT – DETERMINATION OF HALL COEFFICIENTS
Aim:
To study the hall effect in a given semiconductor and to determine the following
parameters, viz.,( i) hall voltage (VH) (ii) hall co-efficient (RH) (iii) concentration of charge
carriers (n) (iv) mobility of charge carriers(µ) and (v) hall angle (θH).
Apparatus required:
Semiconductor crystal (Ge), Hall probe, Hall effect setup, Electromagnet, Constant power
supply (current), digital gauss mater etc.,
Formulae:
(i) Hall co-efficient, (RH) = (VH)ω/BI

(ii) Concentration of charge carriers, n= 1/ (RHe)
(iii)Mobility of charge carriers, µ= RHσ
(iv) Hall angle, θH =tan-1[10-8RHBσ]
Where,
VH - hall voltage
Ω - Thickness of the specimen
B - Applied magnetic field
I - current applied to the Ge crystal
e - charge of the carrier (ρ=1.6x10-19c)
σ - electrical conductivity of the Ge crystal
Theory:
When a magnetic field is applied perpendicular to the direction of current following in a

conductor or semiconductor, a voltage is developed across the specimen in a direction
perpendicular to both the current and applied magnetic field. This phenomenon is called the Hall
Effect and the voltage so developed is called the hall voltage.
Consider a specimen where it carries a current Ix along the X- direction under the
application of a transverse magnetic field BZ along the Z-direction. Then a force called the Lorentz
force is developed along the Y-direction. Due to the force, the charge carriers are forced to move
downwards and they accumulate near the bottom face. If the specimen is a metal, where only one
type of charge carriers (i.e.,) electrons exist, they are forced down to the bottom surface which
becomes more negative, when compared to that of a top surface. Hence a potential difference is
developed between the bottom and top surface.
14
If the specimen is an n-type semiconductor where the electrons are forced down into the
bottom surface. Therefore the top and bottom surfaces become positive and negative respectively.
In a P-type semiconductor, the bottom surface is occupied by holes and becomes more positive
compared to the top surface. In all the above cases, the potential; difference between the upper and
the lower surfaces is known as Hall Voltage.
Hall voltage is given by VH = BI/(neω). Here 1/ne =RH which is known as Hall Co-efficient
and the same is given by (RH) =(VH)ω/BI, where ω is thickness of the specimen, I is the current to
the Ge crystal and B is the magnetic field.
Hall coefficient or Hall constant is material dependent. It is either positive or negative

indicating the type of charge carriers. Negative and positive RH indicates that the type as charge
carriers is electrons and holes respectively. Its magnitude is larger for smaller n. The effect is
smaller for good metallic conductor and becomes more prominent in semiconductors and
semimetals. Concentration of charge carriers, n= 1/ (RHe)
Mobility is defined as the ratio of the average drift velocity per unit electric field. It can be
determined by using the relation µ= RHσ . If θH is the hall angle then one can calculate the same by
using the relation tan θH=EH/EX, where EH is the hall field (i.e,.) the hall voltage measured per unit
thickness of the specimen.
θH = tan-1[10-8RHBσ] where σ is the conductivity of the specimen which is assumed in the

present study.
Procedure
The widthwise contacts of the Hall probe are connected to the terminals marked as voltage;
the lengthwise contacts are connected to the terminals marked as current. The Hall Effect setup is
switched on and the current is set for few milliamperes. The display in the Hall Effect setup is set
to voltage side. There may be some voltage reading even when the specimen or hall probe is
outside the magnetic field. This is due to the imperfect alignment of four contacts (two for
measuring current and another two for measuring hall voltage) of the Hall probe and is generally
known as zero field potential. In case its value is comparable to hall voltage it should be adjusted
to a minimum as possible. The probe is placed in a magnetic field now switch on the
electromagnetic power supply and adjust the current to any desired value. The hall or the specimen
is rotated till it becomes perpendicular to the magnetic field. Hall voltage is maximum in this
adjustment. Hall voltage is measured as a function of magnetic field keeping a suitable value of
current fixed. The magnetic field is measured by using a gauss meter. Hall voltage are measured by
changing the current directions for a given direction and magnitude of a magnetic field. Similarly
VH is measured by exchanging the directions of the current and magnetic field. All the observations
are recorded as in table shown below for three different values of current. The values of the
parameters viz., Hall coefficient, concentration of charge carriers and hall angle are calculated
15
using the relations as discussed in the theory section. Plot of VH as a function of B and also θH as a
function of B are made and used for an analysis of the observations.
Table1
Determination of Hall Voltage(VH)

Ge crystal (No. 4517)
Distance between the two pole pieces = 1.5 cm
Residual magnetic field = 84 gauss
Current to the Ge crystal = 1mA
Zero field potential = 0.1mV
Voltmeter reading(mV) Corrected

Current to Corrected
Sl. Magnetic Position I Position II Mean hall
electromag magnetic
No field (gauss) +VH -VH +VH -VH VH(mV) voltage(mV)
net (amp) field(gauss)
1.
2.
3.
4.
5.
6.
7.
8.
Result:
A study on Hall Effect for the given Ge crystal specimen has been performed. The type of
carrier has been found to be p-type and also the following parameters have been determined from
the result of the experiments.
i. Hall co-efficient,(RH) =
ii. Concentration of charge carriers =
iii. Mobility of charge carriers, µ =
iv. Hall angle, θH =
16
5. ULTRASONIC INTERFEROMETER – VELOCITY OF ULTRASONIC WAVES IN

LIQUID
Aim:
To determine the velocity of ultrasonic waves in liquid medium
Apparatus:
Ultrasonic Interferometer, Organic liquids, Power supply, pipette etc.
Formula:
1. Wavelength  = (2d/n)* m
where
d – Distance between the reflections in m.
n – Number of fringes
2. Velocity v =  (m/s)
where
 - frequency of the high frequency generator
 - wavelength of ultrasonic waves in m
3. Compressibility k = 1/e v (m2 /N)

where
e – Density of the liquid in Kg m-3
v - velocity of the ultrasonic waves in ms-1
Working:
An Ultrasonic Interferometer is a simple and direct device to determine the ultrasonic

velocity in liquids with a high degree of accuracy.
The principle used in the measurement of velocity (v) is based on the accurate
determination of the waves of known frequency (f) are produced by a movable metallic plate kept
parallel to the quartz crystal. If the separation between these two plates is exactly a whole multiple
of the sound wavelength, standing waves are formed in the medium. This acoustic resonance gives
rise to an electrical reaction on the generator driving the quartz crystal and the anode current of the
generator becomes maximum.
If the distance is increased or decreased and the variation is exactly one half wavelength
(/2) or multiple of it , anode current becomes maximum from the wavelength, the velocity can be
obtained by the relation.
Velocity = wavelength x frequency (v =  )
17
Description:
The ultrasonic interferometer consists of the following parts.
1. High frequency generator

2. Measuring cell
1. The high frequency generator is designed to excite the quartz crystal fixed at the bottom of
the measuring cell at its resonant frequency to generate ultrasonic waves in the
experimental liquid filled in the “ measuring cell”. A micrometers to observe the change in
current and two controls for the purpose of sensitivity regulation and initial adjustments of
the micrometer and provided on the panel of the high frequency generator.
2. The measuring cell is specially designed double walled cell for maintain the temperature of
the liquid constant during the experiment. A fine micrometer screw has been provided at
the top which can lower or raise the reflector plate in the liquid in the cell through a known
distance. It has a quartz crystal fixed at its bottom.
Adjustments:
The instrument is adjusted in the following manner.
1. Insert the cell in the square base socket and clamp it with the help of a screw provided
on one of its side.
2. Unscrew the cap of the cell and lift it away from double walled construction of the cell.
In the middle position of it pour experimental liquid and screw the cap.
3. Two chutes in double wall construction are provided for water circulation to maintain
desired temperature.
For initial adjustment two knobs are provided on high frequency generator. One is marked
as “Adj“ with “Adj” the position of the needle on the ammeter is adjusted and the knob marked as
“Gain” is used to increase the sensitivity of the instrument for greater deflection if desired.
The ammeter is used to notice the number of maximum deflections which micrometer is
moved up and down in liquid as described in the procedure.
18
Procedure:
The measuring cell is connected to the output terminal of the high frequency generator
through a shielded cable. The cell is filled with experimental liquid before switching on the
generator. The ultrasonic waves move normal from the quartz crystal till they are reflected back
from the movable plate and the standing waves are formed in the liquid in between the reflector
plate and the quartz crystal. The micrometer is slowly moved till the anode current on the meter on
the high frequency generator shows a maximum. A number of maxima reading of anode current are
passed and their number „n‟ are counted. The total distance (d) gives the values of the wavelength
() with the help of following relation,
d = n/2
by knowing the wavelength (), the velocity of ultrasonic waves in the liquid can be calculated.
Result:
The velocities of ultrasonic waves in different liquid media are determined using ultrasonic
interferometer and its compressibilities are determined.
Water:
Distance moved in the Distance moved for 10 fringes

Number of deflections
micrometer (mm) (mm)
n + 10 22.67 2.38
n + 20 20.29 2.64
n + 30 17.65 2.24
n + 40 15.41 2.42
n +50 12.99 2.18
n + 60 10.80 2.63
n +70 8.17 3.16
n + 80 5.01
d = 2.47 x 10-3 m
19
Acetone:
Distance moved in the Distance moved for 10 fringes

Number of deflections
n + 10 23.11 2.26
n + 20 20.85 2.20
n + 30 18.65 1.70
n + 40 16.95 2.20
n +50 14.75 1.76
n + 60 12.99 2.14
n +70 10.85 1.50
n + 80 9.35
d = 1.96 x 10-3
m
Carbon tetrachloride:
Number of deflections Distance moved in the Distance moved for 10 fringes

n + 10 23.74 2.10
n + 20 21.67 1.51
n + 30 20.16 2.13
n + 40 18.08 1.15
n +50 16.93 1.46
n + 60 15.47 1.04
n +70 14.43 1.42
n + 80 12.29
d = 1.54 x 10-3 m
Methanol:
Number of deflections Distance moved in the Distance moved for 10 fringes

n + 10 23.04 1.24
n + 20 21.84 1.17
n + 30 20.67 3.25
n + 40 17.42 1.75
n +50 15.67 2.14
n + 60 13.53 1.23
n +70 12.30 2.12
n + 80 10.12
d = 1.84 x 10-3 m
20
Practical IV: Microprocessor (DKPP4)

LIST OF EXPERIMENTS
Sl. No. Name of the experiment Page No.
a. Addition of two 8-bit numbers 22

1.
b. Subtraction of two 8-bit numbers 26
2. 16-bit multiplication 30
3. 16-bit divisioin 34
4. Fibonacci Series 38
5. Factorial Of 8 Bit Number 42
21
EXPERIMENT - 1
a) ADDITION OF TWO 8-BIT NUMBERS
Aim:
To write an assembly language for adding two 8 bit numbers by using microprocessor kit.
Apparatus required:
8085 microprocessor kit
(0-5V) DC battery
Algorithm:
Step 1 : Start the microprocessor
Step 2 :Intialize the carry as „Zero‟
Step 3 : Load the first 8 bit data into the accumulator
Step 4 : Copy the contents of accumulator into the register „B‟
Step 5 : Load the second 8 bit data into the accumulator.
Step 6 : Add the 2 - 8 bit data and check for carry.
Step 7 : Jump on if no carry
Step 8 : Increment carry if there is
Step 9 : Store the added resultfrom accumulator to memory
Step 10 : Move the carry value to accumulator
Step 11 : Store the carry value from the accumulator to memory
Step 12 : Stop the program execution.
22
Flowchart
23
Address Label Mnemonics Hex Code Comments
4100 MVI C,00 OE,00 Initialize the carry

as zero
4102 LDA 4300 3A,(00,43) Load the first 8-bit

data
4105 MOV B,A 47 Copy the value of 8

bit data into register
B
4106 LDA 4301 3A,(01,43) Load the second 8

bit data into the
accumulator
4109 ADD B 80 Add the two values
410A JNC D2, 0E, 41 Jump on if no carry
410D INR C OC If carry is there

increment it by one
410E Loop STA 4302 32 (02, 43) Store the content of
the accumulator to
the memory address
4111 MOV A,C 79 Move the value of
carry to the
accumulator from
register C
4112 STA 4303 32 (03, 43) Store the value of
carry from
accumulator to the
memory address
4115 HLT 76 Stop the program
execution
24
Input
Without carry
Input address Value
4300 04
4301 02
Output
Output address Value

4302 06
4303 00
Input
With carry
Input address Value

4300 FF
4301 FF
Output

4302 FE
4303 01
Result
The assembly language program for 8 bit addition of two numbers was executed
successfully by using 8085 microprocessor kit.
25
EXPERIMENT - 1
b) SUBTRACTION OF TWO 8 BIT NUMBERS
Aim:
To write a assembly language program for subtracting 2 bit (8) numbers by using- 8085
microprocessor kit.
Apparatus required:
8085 micro processor kit
(0-5V) DC battery
Algorithm:
Step 2 :Initialize the carry as „Zero‟
Step 3 : Load the first 8 bit data into the accumulator
Step 4 : Copy the contents of contents into the register „B‟
Step 5 : Load the second 8 bit data into the accumulator.
Step 6 : Subtract the two 8 bit data‟s and check for borrow.
Step 7 : Jump on if no borrow
Step 8 : Increment borrow if there is
Step 9 : 2‟s compliment of accumulator is found out
Step 10 : Store the result in the accumulator
Step 11 : More the borrow value from „c‟ to accumulator
Step 12 : Store the borrow value in the accumulator
Step 13 : Stop program execution
26
Flowchart:
27
4100 MVI C,00 OE,00 Initialize the carry as zero
4102 LDA 4300 3A,(00,43) Load the first 8-bit data into the accumulator
4105 MOV B,A 47 Copy the value of 8 bit data into register B
4106 LDA 4301 3A,(01,43) Load the second 8 bit data into the accumulator
4109 SUB B 90 Subtract both the values
410A Loop INC D2,0E,41 Jump on if no borrow
410D INR C OC If borrow is there increment it by one
410E Loop CMA 2F Compliment of 2nd data
410F ADI, 01 6, 01 Add one to 1‟s compliment of 2nd data
4111 STA 4302 32,02,43 Store the result in accumulator
4114 MOV A,C 79 Moul the value of borrow into the accumulator
4115 STA 4303 32,03,43 Store the result in accumulator
4118 HLT 76 Stop Program execution
28
Input
Without Borrow
Input address Value
4300 05
4301 07
Output
4302 02
4303 00
Input
With Borrow
Input address Value
4300 07
4301 05
Output
4302 02
4303 01 (borrow)
Result
The assembly language program for subtraction of two 8 bit numbers was executed
successfully by using 8085 microprocessor kit.
29
EXPERIMENT - 2
16 – BIT MULTIPLICATION
Aim:
To write an assembly language program for 16 bit multiplication by using 8085

microprocessor kit.
Apparatus required:
(0-5V) DC battery
Algorithm:
Step 2 : Load the 1st data in „HL‟ register pair
Step 3 : Move content of „HL‟ pair to stack pointer
Step 4 : Load the 2nd data in „HL‟ and move it to „DE‟
Step 5 : Make „HL‟ pair as „00‟ and „00‟
Step 6 : Add „HL‟ pair and „SP‟
Step 7 : Check for carry condition, if carry is present increment it by one else move to
next step.
Step 8 : Decrement DE register
Step 9 : Then move E to „A‟ and perform „OR‟ operation with „a‟ and „D‟
Step 10 : The value of operation is zero, then store the value else go to step 3
Step 11 : Stop the program
30
Flowchart:
31
Memory Location Hex Code Label Mnemonics

Comments
Opcode Operand
4100 2A,00,42 LHLD 4200 Get the 1st data in HL
4103 F9 SP HL Save it in stack pointer4106
4106 2A,02,42 LHLD 4202 Get the 2nd data in HL
4107 EB XCHG Exchange „HL‟ and „DC‟
4108 21,00,00 LXI H 0000 Make HL – 0000
410B 01,00,00 LXI B 0000 Make BC – 0000
410E 39 Next DAD SP Add „SP‟ and „HL‟
410F D2, 13, 41 JNC Loop Jump to loop if no carry
INX
4112 03 B Increment „BC‟ by one
4113 Loop DCX D
1B Decrement „DE‟ by one
7B MOV A,E
4114 Make E – A
B2 D
4115 ORA „OR‟ gate between A & D
C2,0E,41 JNZ Next
4116 Jump on if number zero
SHLD 4204
4119 22,04,42 Store the LSB in memory
69 MOV L,C
411C Make C to L
60 MOV H,B
411D Make B to H
411E 22,06,42 SHLD 4206
Store the MSB in memory
76 HLT
4121 Stop the program
32
Input
Input address Value
4200 04
4201 07
4202 02
4203 01
Output
4204 08
4205 12
4206 01
4207 00
Result:
Thus the assembly language program for 16 bit multiplication was executed
successfully.
33
EXPERIMENT - 3
16 – BIT DIVISION
Aim:
To write an assembly language program for 16 bit division in 8085 microprocessor.
Apparatus required:

(0-5V) DC battery
Algorithm:

Step 2 : Initialise „BC‟ as „0000‟ for Quotient
Step 3 : Load the divisor in „HL‟ pair and save it in „DE‟ register pair
Step 4 : Load the dividend in „HL‟ pair
Step 5 : Move the value of „a‟ to register „E‟
Step 6 : Subtract the content of accumulator with „E‟ register
Step 7 : Move the content „A‟ to „C‟ & „H‟ to „A‟
Step 8 : Subtract with borrow, the content of „A‟ with „D‟
Step 9 : Move the value of „a‟ to „H‟
Step 10 : If cy = 1, go to step 12, otherwise next step
Step 11 : Increment „B‟ register & jump to step „4‟
Step 12 : Add both contents of „DC‟ and „HL‟
Step 13 : Store the remainder in memory
Step 14 : Move the content of „C‟ to „L‟ & „B‟ to „H‟
Step 15 : Store the Quotient in memory
Step 16 : Stop the program
34
Flowchart
35

LXI B,0000 0,00,00 Intialise Quotient as
4500
„0000‟
LHLD 4802 2A,02,48
4503 Load the divisor in „HL‟
XCHG EB
4506 Exchange „HL‟ and „DE‟
LHLD 4800 2A,00,48
4507 Load the dividend
Loop 2 MOV A,L 7D Move the „L‟ value to
450A
„A‟
450B SUB E 93
(A-E) – A
MOV L,A 6F A- L (A value is move to
450C L)
MOV A,H 7C H – A (a is stored with
450D H)
450E SBB D 9A Subtract „D‟ from „A‟
450F MOV H,A 67 Then A is moved to „H‟

JC loop 1 DA,17,45 If cy is present go to loop
4510
1
4513 INX B 03 Increment BC pair by 1
4514 JMP loop 2 C3, 0A, 45 Jump to loop 2

Loop 1 DAD „D‟ 19 „DE‟ and „HL‟ pair all
4517
added
4518 SHLD 4806 22,06,48 HL is stored in memory
MOV L,C 69 Move „C‟ register data to
451B
„L‟
MOV H,B 60 Move „B‟ register data to
451C
„H‟
SHLD 4804 22,04,48 Store the result in „HL‟
451D
pair
4520 HLT 76 Stop Program execution
36
Input
Input address Value
4800 04
4801 00
4802 02
4803 00
Output
4804 02
4805 00
4806 FE
4807 FF
Result:
Thus the assembly language program for 16 bit division was executed successfully.
37
EXPERIMENT - 4
FIBONACCI SERIES
Aim:
To write an assembly language program to generateFibonacci Series.
Apparatus required:

(0-5V) DC battery
Algorithm:

Step 2 : Load the length of series in the accumulator and decrement it by 2
Step 3 : Move the value to register „D‟
Step 4 : Load the starting value of data value address
Step 5 :Intialise the 1st number as 00
Step 6 : Move the pointer to 2nd data and intialise them as „01‟
Step 7 : Move the pointer to next position for next data
Step 8 :Intialise B as „00‟ and C as „01‟ for calculations
Step 9 : Copy the contents of „B‟ to accumulator
Step 10 : Add the content of „C‟ register to accumulator
Step 11 : Move the content „C‟ to „B‟ and „A‟ to C
Step 12 : Now store the result to memory pointed by „HL‟ pair
Step 13 : Move the pointer to next pointer
Step 14 : Decrement 0 by 1 for counter
Step 15 : If „D‟ is not zero, go to step 9
Step 16 : if „D‟ is zero, end the program
Flowchart
38
39

LDA 4300 3A, 00, 43 Store the length of
4200
series in „A‟
SUI 02 D6, 02 Decrement „A‟ by
4203
02
MOV D,A 57 Move „A‟ to „D‟
4205
(counter)
LXI H, 4301 21,01,43 Load the starting
4206
address of array
MVI M,00 36,00 Intialise 4301 as
4209
„00‟
420B INX H 23 Increment pointer
MVI M, 01 36,01 Initialize 2nd as

420C
„01‟
420E INX H 23 Increment pointer
420F MVI B,00 06,00 Intialise „B‟ as „00‟
4211 MVI, C, 01 0E, 01 Intialise „C‟ as „01‟
4213 Loop MOV A,B 78 Move B to A
4214 ADD C 81 Add „A‟ and „C‟
4215 MOV B,C 41 Move C to B
4216 MOV C,A 4F Move A to C

MOV M,A 77 Move the result to
4217
memory
4218 INX H 23 Increment pointer
4219 DCR D 15 Decrement counter

JNZ loop C2, 13,42 If D = 0, jump to
421A
loop
421D HLT 76 Stop the program
40
Input
Input address Value
4300 05
Output
4301 00
4302 01
4303 01
4304 02
4305 03
Result:
The assembly language for Fibonacci series was executed successfully using 8085
microprocessor kit.
41
EXPERIMENT - 5
FACTORIAL OF 8 BIT NUMBER

Aim:
To write an program to calculate the factorial of a number (between 0 to 8)
Apparatus required:

(0-5V) power supply
Algorithm:
Step 1 :Intialize the stack pointer

Step 2 : Get the number in accumulator
Step 3 : Check for if the number is greater than 1. If no store the result otherwise go to next
step.
Step 4 : Load the counter and initialize result
Step 5 : Now factorial program in sub-routine is called.
Step 6 : In factorial, initialize HL RP with 0.
Move the count value to B
Add HL content with Rp.
Decrement count (for multiplication)
Step 7 : Exchange content of Rp (DE) with HL.
Step 8 : Decrement counter (for factorial) till zero flag is set.
Step 9 : Store the result
Step 10 :Halt
Memory address Content

4250 05
4251 (12010)
42
Flowchart
43
44
Result:
The assembly language for factorial of a number was executed successfully using
8085 microprocessor kit.
45

M.Sc. Physics: Manonmaniam Sundaranar University

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Laboratory Manual for Practical Courses

Directorate of Distance and Continuing Education

Practical III: Non-Electronics (DKPP3)

Contents Page no.

3 Resistivity – Four Probe Method 11

4 Hall effect – Determination of Hall coefficients 14

5 Ultrasonic interferometer – velocity of ultrasonic waves in liquid 17

Dielectric cell, Dielectric material, Capacitance, Various AC voltmeter, Temperature

Dielectric constant εr = C/Co

(i) Heating Tc = 132° C

Table for measurement:

(i) Refractive index

A → Angle of the prism

µ1, µ2→ Refractive indices of the prism corresponding to 1 and 2.

1 and 2 are wavelengths. A and B are constants.

Spectrometer, Prism and white light source.

(i) Determination of the angle of prism

The angle of the prism is calculated from the relation.

(ii) Determination of angle of minimum deviation:

Determination of Cauchy‟s constant

Observation and Calculation

Value of IMSD = 30‟

To find the refractive index

(iii)To find wavelength of the prominent lines of the mercury spectrum

Direct ray Difference =Sin/Nm

(iv) To find Cauchy‟s constant

(v) To find Cauchy‟s constant from graph

The experimental values of the wavelength of different colours of the spectrum

From observation A = -----------------------------

From graph A = ------------------------------

3. FOUR PROBE – MEASUREMENT OF RESISTIVITY

i) To find the resistivity of the given semiconductor material.

Milliammeter, Voltmeter, oven, semiconductor material to be used, thermometer, four

Four probe method:

Measurement of resistivity of Ge crystal is made to determine the suitability for the

5. Connect the setup to the a.c. mains and switch on.

10. Repeat the experiment for different values of current.

The conductivity of the semiconductor material is calculated by

 = 0 / G7(W/S) = 0/4.159 s/m

1. Resistivity of a semiconductor material sample with temperature is studied.

2. Band gap energy of the semiconductor material (Eg) is ------------.

4. HALL EFFECT – DETERMINATION OF HALL COEFFICIENTS

(i) Hall co-efficient, (RH) = (VH)ω/BI

When a magnetic field is applied perpendicular to the direction of current following in a

Hall coefficient or Hall constant is material dependent. It is either positive or negative

θH = tan-1[10-8RHBσ] where σ is the conductivity of the specimen which is assumed in the

Determination of Hall Voltage(VH)

Voltmeter reading(mV) Corrected

5. ULTRASONIC INTERFEROMETER – VELOCITY OF ULTRASONIC WAVES IN

3. Compressibility k = 1/e v (m2 /N)

An Ultrasonic Interferometer is a simple and direct device to determine the ultrasonic

Velocity = wavelength x frequency (v =  )

The ultrasonic interferometer consists of the following parts.

1. High frequency generator

The instrument is adjusted in the following manner.

Distance moved in the Distance moved for 10 fringes

Distance moved in the Distance moved for 10 fringes

Number of deflections Distance moved in the Distance moved for 10 fringes

Number of deflections Distance moved in the Distance moved for 10 fringes

Practical IV: Microprocessor (DKPP4)

Sl. No. Name of the experiment Page No.

a. Addition of two 8-bit numbers 22

5. Factorial Of 8 Bit Number 42