Name: Matric No:

Section:

INTERNATIONAL ISLAMIC UNIVERSITY MALAYSIA

MID TERM EXAMINATION
SEMESTER I, 2014/2015 SESSION
KULLIYYAH OF ENGINEERING

Program : ENGINEERING Level of Study : UG1

Time : 11.00 am – 13.00 pm Date : 4/11/2014
Duration : 2 hours Course Code : ECE 1312
Section(s) : 1-9
Course Title : Electronics

This Question Paper Consists of Eight (8) Printed Pages Including Cover Page With Five (5)
Questions.

INSTRUCTION(S) TO CANDIDATES
DO NOT OPEN UNTIL YOU ARE ASKED TO DO SO
 Total mark of this examination is 50.
 This examination is worth 25% of the total assessment
 Answer all 5 (Five) questions.

Any form of cheating or attempt to cheat is a serious offence which may lead to
dismissal.
Question 1

a) What are active and passive devices? Give an example for each of them.
(4 marks)

b) Fig. 1(b) shows a voltage amplifier circuit. The amplifier input resistance, output
resistance and open circuit voltage gains are Ri=2.5 kΩ, R0 =200 Ω and A0 =¿150
respectively. A voltage source with resistances R S=1.5 kΩ and a load resistance of
R L=500 Ω are connected to the amplifier as shown in Fig. 1(b). (6 marks)

i. Find the value of vi in terms of vs

ii. Find the value of vo in terms of vs
vo
iii. Deduce the value of the actual voltage gain, A v = of the amplifier
vs

Fig. 1(b)
Question 2

a) How to make a p-type and a n-type extrinsic semiconductors?

( 4 marks)

b) At 30o C temperature with thermal equilibrium condition, the minority charge carrier
(electron) concentration of a p-type silicon material is 2.5×10 5 cm-3. Determine the
acceptor atom concentration of the material. (Boltzmann’s constant k =86 ×10−6 eV / K ¿.
(Please refer to the table on the last page)
( 6 marks)
Question 3.

As shown in Fig. 3, a Silicon pn-junction diode is working at a temperature 350° K. The diode
has been constructed with doped at 1.2 × 10 16 cm-3 in p-type and 1.0 × 10 17 cm-3 in n-type
semiconductors. Determine the diode current I D in the circuit by using the diode constant voltage
model where V equals to the built-in potential voltage of the diode, Vbi
(Please refer to the table on the last page)
(10 Marks)

Fig. 3
Question 4.

a) State two differences between the center-tapping full- wave rectifier and bridge rectifier
circuits. ( 4 marks)

b) Design a full-wave bridge rectifier circuit for a desired peak output current, I L =150 mA
with a transformer feed as shown in Fig. 4(b). Assume that the transformer primary is
connected with a 220 V(rms) main supply line and the circuit diode cut-in voltage V γ =
0.65 V. (Hints, determine the transformer turns ratio).
( 6 marks)

Fig. 4(b)
Question 5

a) Design a Zener diode voltage regulator circuit as shown in Fig. 5(a). Consider the Zener
breakdown voltage and current are,V Z =8.5 V and I Z =35 mA respectively.
( 6 marks)

Fig. 5(a)
b) A diode clipper circuit as shown in Fig. 5(b). Its input voltage v I is a 20 VPP triangular
waveform. Sketch the output waveform vO of the clipper circuit on the graph is given at
the right side of the circuit. Assume that V B=3 V and V γ =0.65 V .

( 4 marks)

Fig. 5(b)
 Semiconductor Constants

Material Bandgap Energy (eV) B (cm-3 K-3/2)

Silicon 1.1 5.23 × 1015

Germanium 0.66 1.66 × 1015

Gallium Arsenide 1.4 2.10 × 1014