Electronics ECE 1312

INTERNATIONAL ISLAMIC UNIVERSITY MALAYSIA

END OF SEMESTER EXAMINATION
SEMESTER I, 2014/2015 SESSION
KULLIYYAH OF ENGINEERING
Programme : ENGINEERING Level of Study : UG 1

Time : 2:30 pm - 5:30 pm Date : 05/01/2015

Duration : 3 Hours

Course Code : ECE 1312 Section(s) :1-9

Course Title : Electronics

This question paper consists of eight (8) printed pages (including cover page) with five (5)
questions.

INSTRUCTION(S) TO CANDIDATES

DO NOT OPEN UNTIL YOU ARE ASKED TO DO SO

 Total mark of this examination is 100.

 This examination is worth 50% of the total assessment.
 Answer ALL FIVE questions.

Any form of cheating or attempt to cheat is a serious offence which may

lead to dismissal.

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Electronics ECE 1312

Q.1 [20 marks]

(a) State two characteristics for each conventional pn-junction diode and Ziner diode.
(4
marks)
(b) Design a full-wave center-tapping rectifier circuit for a desired peak output current,
I L =125 mA with a transformer feed as shown in Fig. 1(b). Assume that the transformer primary
is connected with a 220 V(rms) main supply line and the circuit diode cut-in voltage V γ = 0.65 V
and r f =10 Ω . (Hint: determine the transformer turns ratio). (6 marks)

Fig. 1(b).

(c) Repeat question Q.1 (b) using the ideal diode model (Vγ = 0 V and r f =0 Ω). (3 marks)

(d) Derive the output voltage v 0for the input voltage vi =V M sin ( ωt ) of the ideal diode clamper
circuit is as shown in Fig. 1(d). (3 marks)

Fig. 1(d)

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Electronics ECE 1312

(e) Sketch the output voltage waveform for the circuit in Fig. 1 (d) by analyzing the circuit for the
input triangular voltage waveform as shown in Fig. 1(e). (4 marks)

Fig. 1(e).

Q.2 [20 marks]

(a) A common emitter BJT circuit is designed as shown in Fig. 2(a). The output load line and
defined Q-point of the circuit is shown in Fig. 2(a). Determine the required values of V CC , RC
and R B. Assume that V BE ( on )=0.7 V . (6 marks)

Fig. 2(a)

(b) The voltage transfer characteristic and its BJT circuit are shown in Fig. 2(b). Find the value of the
resistor, RB by assuming VI = 1.9 V. Given the valus of VBE(on) = 0.7 V and β = 120. (6 marks)

RB

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Electronics ECE 1312

Fig. 2(b)
(c) What is the purpose of biasing? (2 marks)
(d) For the biasing circuit shown in Fig. 2(d), RB = 250 k, RC = 5 k and VCC = 10 V. By assuming
that VBE(on) = 0.7 V and β = 30, calculate IBQ, ICQ, and VCEQ. (6 marks)

Fig. 2(d)

Q. 3 [20 marks]

(a) Give two differences between common emitter and common collector amplifier circuits.
(2 marks)
(b) A common collector circuit is shown in Fig. 3 (b),
i. Determine the DC collector current. (4 marks)
ii. Prove that the circuit is biased in forward-active mode. (2 marks)
iii. Draw the small-signal equivalent circuit. (2 marks)
iv. Find the input resistance Ri and voltage gain A v =v 0 / v s. (6 marks)
Assume that the transistor parameters are; β = 110, VBE (on) = 0.7 V and VA = ∞.

Fig. 3 (b)

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Electronics ECE 1312

(c) A common-emitter circuit is shown in Fig. 3(c), the transistor parameters are, β = 110,
VBE(on) = 0.65 V, ICQ = 0.2 mA and VCEQ = 3.2 V. Assume that, RS = 1 kΩ, RE = 2.5 kΩ,
RC = 13 kΩ and ro = ∞.
i. Calculate the small-signal transistor parameters, rπ and gm. (2 marks)
ii. Draw the small-signal equivalent circuit. (2 marks)

Fig. 3(c)

Q.4 [20 marks]

(a) A common source amplifier is designed as shown in Fig. 4(a). Consider the MOSFET parameters
2
are, V TN =1.8 V , K n=0.15 mA/ V , gm =0.77 mA / V and  = 0.

i. Verify that the MOSFET is working in the saturation region. Assuming that VGS = VDS.
(3
marks)
ii. Draw the small signal equivalent circuit. (3 marks)
iii. Determine the value of the voltage gain, A v =v 0 / v i (4 marks)

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Electronics ECE 1312

Fig. 4(a)

(b)
i. Design the common drain amplifier circuit as shown in Fig. 4(b) for voltage gain
A v =v 0 / v i=0.925. The parameters of the MOSFET are, gm = 4 mA/V and
ro = 50 k. (4 marks)
ii. Draw the small signal equivalent circuit (2 marks)
iii. Determine the effect of voltage gain if RS =  (4 marks)

Fig. 4(b)

Q. 5 [20 marks]

(a) Compare four differences between BJT and MOSFET. (4 marks )

(b) Design an n-channel MOSFET circuit shown in Fig. 5(b) to fulfill a set of conditions as
I DQ =0.6 mA and V DSQ=3.5 V. Given that the transistor parameters are
'
K n=120μA/V2, ( WL ) = 8 andV TN = 1.5 V (8 marks )

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Electronics ECE 1312

Fig. 5(b)
(c) Design the non-inverting amplifier as shown in Fig. 5(c) with a voltage gain of 25 by
determining the value of resistance R1. (2 marks)

Fig. 5(c)

(d) A summing amplifier is shown in Fig. 5(d) with a feedback resistance, RF = 10 kΩ. Design
the circuit to produce a specific output signal, such that v 0=¿ V. Assume that the input
signals are, v I 1=−1.0 V and v I 2=0.5 cos ωt V. (6 marks)

Fig. 5(d)

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Electronics ECE 1312

Some Useful Equations

For pn-junction diode:

vD
VT
I D=I s ( e −1)

For BJT:
I CQ
gm =
VT
β VT
r π=
I CQ
VA
ro=
I CQ

For NMOSFET:

I D= K n [2 ( V GS −V TN ) V DS−V 2]
DS

2
I D= K n ( V GS −V TN )

1
ro=
I DQ λ

gm=2 √ K n I DQ

Wμ n C ox
K n=
2L

K 'n W
K n= ∙
2 L

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Electronics ECE 1312