VO3150A

Vishay Semiconductors

0.5 A Output Current IGBT and MOSFET Driver

FEATURES
• 0.5 A minimum peak output current
NC 1 8 VCC • 25 kV/μs minimum common mode rejection
(CMR) at VCM = 1500 V
A 2 7 VO • ICC = 2.5 mA maximum supply current
C 3 6 VO
• Under voltage lock-out (UVLO) with
hysteresis
NC 4 5 VEE • Wide operating VCC range: 15 V to 32 V
Shield
20530_1 • 0.4 μs maximum propagation delay
D E
V • Industrial temperature range: - 40 °C to 110 °C
• 0.5 V maximum low level output voltage (VOL)
19813
• Compliant to RoHS directive 2002/95/EC
DESCRIPTION
The VO3150A consists of a LED optically coupled to an APPLICATIONS
integrated circuit with a power output stage. This • Isolated IGBT/MOSFET gate driver
optocoupler is ideally suited for driving power IGBTs and • AC and brushless DC motor drives
MOSFETs used in motor control inverter applications. The
• Induction stove top
high operating voltage range of the output stage provides
the drive voltages required by gate controlled devices. The • Industrial inverters
voltage and current supplied by this optocoupler makes it • Switch mode power supplies (SMPS)
ideally suited for directly driving IGBTs with ratings up to 800 • Uninterruptible power supplies (UPS)
V/20 A. For IGBTs with higher ratings, the VO3150A can be
used to drive a discrete power stage which drives the IGBT AGENCY APPROVALS
gate. • UL - file no. E52744 system code H, double protection
• cUL - file no. E52744, equivalent to CSA bulletin 5A
• DIN EN 60747-5-5 (VDE0884) available with option 1

ORDERING INFORMATION
DIP-8 Option 7

V O 3 1 5 0 A - X 0 0 7 T

PART NUMBER PACKAGE OPTION TAPE AND 7.62 mm > 0.7 mm

REEL

PACKAGE UL, cUL UL, cUL, VDE

DIP-8 VO3150A -
SMD-8, option 7 VO3150A-X007T VO3150A-X017T

TRUTH TABLE
VCC - VEE VCC - VEE
LED “POSITIVE GOING” “NEGATIVE GOING” VO
(TURN ON) (TURN OFF)
Off 0 V to 32 V 0 V to 32 V Low
On 0 V to 11 V 0 V to 9.5 V Low
On 11 V to 13.5 V 9.5 V to 12 V Transition
On 13.5 V to 32 V 12 V to 32 V High

Document Number: 81808 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com

Rev. 1.1, 14-Jan-10 1
VO3150A
Vishay Semiconductors 0.5 A Output Current IGBT and
MOSFET Driver

ABSOLUTE MAXIMUM RATINGS (1) (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Input forward current IF 25 mA
Peak transient input current < 1 μs pulse width, 300 pps IF(TRAN) 1 A
Reverse input voltage VR 5 V
Output power dissipation Pdiss 45 mW
OUTPUT
High peak output current (2) IOH(PEAK) 0.5 A
Low peak output current (2) IOL(PEAK) 0.5 A
Supply voltage (VCC - VEE) 0 to + 35 V
Output voltage VO(PEAK) 0 to + VCC V
Output power dissipation Pdiss 250 mW
OPTOCOUPLER
Isolation test voltage
(between emitter and detector, climate t=1s VISO 5300 VRMS
per DIN 500414, part 2, Nov. 74)
Storage temperature range TS - 55 to + 125 °C
Ambient operating temperature range Tamb - 40 to + 110 °C
Total power dissipation Ptot 295 mW
Lead solder temperature (3) for 10 s, 1.6 mm below seating plane Tsld 260 °C
Notes
(1) Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(2) Maximum pulse width = 10 μs, maximum duty cycle = 0.2 %. This value is intended to allow for component tolerances for designs with
IO peak minimum = 0.5 A. See applications section for additional details on limiting IOH peak.
(3) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).

RECOMMENDED OPERATING CONDITION

PARAMETER SYMBOL MIN. MAX. UNIT
Power supply voltage VCC - VEE 15 32 V
Input LED current (on) IF 7 16 mA
Input voltage (off) VF(OFF) -3 0.8 V
Operating temperature Tamb - 40 + 110 °C

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2 Rev. 1.1, 14-Jan-10
 VO3150A
0.5 A Output Current IGBT and Vishay Semiconductors
MOSFET Driver

THERMAL CHARACTERISTICS
PARAMETER SYMBOL VALUE UNIT
LED power dissipation Pdiss 45 mW
TA
Output power dissipation Pdiss 250 mW

Total power dissipation Ptot 285 mW θCA

Maximum LED junction temperature Tjmax. 125 °C Package

TC

θDC θEC
Maximum output die junction temperature Tjmax. 125 °C
TJD θDE TJE
Thermal resistance, junction emitter to board θJEB 169 °C/W

Thermal resistance, junction emitter to case θJEC 192 °C/W

θDB
Thermal resistance, junction detector to board θJDB 82 °C/W θEB
TB
Thermal resistance, junction detector to case θJDC 80 °C/W
Thermal resistance, junction emitter to θBA
θJED 200 °C/W
junction detector
19996

TA
Thermal resistance, case to ambient θCA 2645 °C/W

Note
• The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the
temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of
PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's Thermal
Characteristics of Optocouplers application note.

ELECTRICAL CHARACTERISTICS (1)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

IF = 16 mA, Rg = 10 Ω, Cg = 20 nF,
High level output current IOH (3) 0.5 A
VCC = 15 V, VEE = 0 V
IF = 0 mA, Rg = 10 Ω, Cg = 20 nF,
Low level output current IOL (3) 0.5 A
VCC = 15 V, VEE = 0 V
High level output voltage IO = - 100 mA VOH (4) VCC - 4 VCC - 2.1 V
Low level output voltage IO = 100 mA VOL 0.2 0.5 V
High level supply current Output open, IF = 7 mA to 16 mA ICCH 2.5 mA
Low level supply current Output open, VF = - 3 V to + 0.8 V ICCL 2.5 mA
Threshold input current low to high IO = 0 mA, VO > 5 V IFLH 2.1 5 mA
Threshold input voltage high to low VFHL 0.8 V
Input forward voltage IF = 10 mA VF 1 1.3 1.6 V
Temperature coefficient of forward
IF = 10 mA ΔVF/ΔTA - 1.4 mV/°C
voltage
Input reverse breakdown voltage IR = 10 μA BVΡ 5 V
Input capacitance f = 1 MHz, VF = 0 V CIN 60 pF
VO ≥ 5 V VUVLO+ 11 12.6 13.5 V
UVLO threshold
IF = 10 mA VUVLO- 9.5 10.7 12 V
UVLO hysteresis UVLOHYS 1.9 V
Notes
(1) Minimum and maximum values were tested over recommended operating conditions (T
amb = - 40 °C to 110 °C, IF(ON) = 7 mA to 16 mA,
VF(OFF) = - 3 V to 0.8 V, VCC = 15 V to 32 V, VEE = ground) unless otherwise specified. Typical values are characteristics of the device and are
the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. All typical values
were measured at Tamb = 25 °C and with VCC - VEE = 32 V.
(2) Maximum pulse width = 50 μs, maximum duty cycle = 0.5 %.
(3) Maximum pulse width = 10 μs, maximum duty cycle = 0.2 %. This value is intended to allow for component tolerances for designs with
IO peak minimum = 0.5 A.
(4) In this test V
OH is measured with a dc load current. When driving capacitive loads VOH will approach VCC as IOH approaches zero A. Maximum
pulse width = 1 ms, maximum duty cycle = 20 %.

Document Number: 81808 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com

Rev. 1.1, 14-Jan-10 3
VO3150A
Vishay Semiconductors 0.5 A Output Current IGBT and
MOSFET Driver

TEST CIRCUITS

1 8 1 8
0.1 µF 0.1 µF
100 mA
+
2 7 4V
2 7
IF = 7 mA to
16 mA + VCC = 15 V + VCC = 15 V
to 32 V to 32 V

3 6 3 6
IOH VOL

4 5 4 5

20973_1
20974_1

Fig. 1 - IOH Test Circuit Fig. 4 - VOL Test Circuit

1 8 1 8
0.1 µF 0.1 µF
IOL

2 7 2 7
+ VCC = 15 V
to 32 V IF + VCC = 15 V
VO > 5 V to 32 V
+ 3 6
3 6 2.5 V

4 5 4 5

20976_1
20975_1

Fig. 2 - IOL Test Circuit Fig. 5 - IFLH Test Circuit

1 8 8
1
0.1 µF
0.1 µF
VOH
2 7
2 7
IF = 7 mA + VCC = 15 V
to 16 mA to 32 V IF = 10 mA + VCC
3 6 VO > 5 V
3 6
100 mA

4 5
4 5

20978
20977_1

Fig. 3 - VOH Test Circuit Fig. 6 - UVLO Test Circuit

SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Propagation delay time to logic Rg = 47 Ω, Cg = 3 nF, f = 10 kHz,
tPHL 0.1 0.4 μs
low output (1) duty cycle = 50 %
Propagation delay time to logic Rg = 47 Ω, Cg = 3 nF, f = 10 kHz,
tPLH 0.1 0.4 μs
high output (1) duty cycle = 50 %
Rg = 47 Ω, Cg = 3 nF, f = 10 kHz,
Pulse width distortion (2) PWD 0.2 μs
duty cycle = 50 %
Propagation delay difference Rg = 47 Ω, Cg = 3 nF, f = 10 kHz,
PDD (tPHL - tPLH) - 0.35 0.35 μs
between any two parts (3) duty cycle = 50 %
Rg = 47 Ω, Cg = 3 nF, f = 10 kHz,
Rise time tr 0.1 μs
duty cycle = 50 %
Rg = 47 Ω, Cg = 3 nF, f = 10 kHz,
Fall time tf 0.1 μs
duty cycle = 50 %

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4 Rev. 1.1, 14-Jan-10
 VO3150A
0.5 A Output Current IGBT and Vishay Semiconductors
MOSFET Driver

SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
UVLO turn on delay VO > 5 V, IF = 10 mA TUVLO-ON 0.8 μs
UVLO turn off delay VO > 5 V, IF = 10 mA TUVLO-OFF 0.6 μs
Notes
(1) This load condition approximates the gate load of a 1200 V/25 A IGBT.
(2) Pulse width distortion (PWD) is defined as |t
PHL - tPLH| for any given device.
(3) The difference between t
PHL and tPLH between any two VO3150A parts under the same test condition.

1 8
0.1 µF IF
I F = 7 mA to 16 mA
+ VCC = 15 V
2 7 to 32 V tr tf
500 Ω
+ VO
10 kHz 90 %
50 % duty 3 6 47 Ω
50 %
cycle
3 nF 10 %
OUT
4 5
t PLH t PHL
20979_1

Fig. 7 - tPLH, tPHL, tr and tf Test Circuit and Waveforms

COMMON MODE TRANSIENT IMMUNITY

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Common mode transient immunity TA = 25 °C, IF = 10 mA to 16 mA,
|CMH| 25 35 kV/μs
at logic high output (1)(2) VCM = 1500 V, VCC = 32 V
Common mode transient immunity TA = 25 °C, VCM = 1500 V,
|CML| 25 35 kV/μs
at logic low output (1)(3) VCC = 32 V, VF = 0 V
Notes
(1) Pins 1 and 4 need to be connected to LED common.
(2) Common mode transient immunity in the high state is the maximum tolerable |dV
CM/dt| of the common mode pulse, VCM, to assure that the
output will remain in the high state (i.e., VO > 15 V).
(3) Common mode transient immunity in a low state is the maximum tolerable |dV
CM/dt| of the common mode pulse, VCM, to assure that the
output will remain in a low state (i.e., VO < 1 V).

dV VCM
1 8 =
IF dt Dt
0.1 µF
A
R 2 7 0V
+ + Dt
5V VO

3 6 VCC = 32 V VOH
VO

Switch at A: IF = 10 mA
4 5
VO VOL

Switch at B: IF = 0 mA
+

20980-1
VCM = 1500 V

Fig. 8 - CMR Test Circuit and Waveforms

Document Number: 81808 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com

Rev. 1.1, 14-Jan-10 5
VO3150A
Vishay Semiconductors 0.5 A Output Current IGBT and
MOSFET Driver

SAFETY AND INSULATION RATINGS

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Climatic classification
40/110/21
(according to IEC 68 part 1)
Comparative tracking index CTI 175 399
VIOTM 8000 V
VIORM 890 V
PSO 500 mW
ISI 300 mA
TSI 175 °C
Creepage distance Standard DIP-8 7 mm
Clearance distance Standard DIP-8 7 mm
Creepage distance 400 mil DIP-8 8 mm
Clearance distance 400 mil DIP-8 8 mm
Note
• As per IEC 60747-5-5, §7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of prodective circuits.

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

0.0 0.35
VOL - Output Low Voltage (V)

IF = 16 mA
IOUT = - 100 mA 0.30
VOH - VCC - High Output

- 0.5
VCC = 32 V
Voltage Drop (V)

VEE = 0 V 0.25
- 1.0
0.20
- 1.5
0.15
- 2.0 VF(OFF) = 0.8 V
0.10
IOUT = 100 mA
- 2.5 VCC = 32 V
0.05 VEE = 0 V
- 3.0 0.00
- 40 - 20 0 20 40 60 80 100 120 - 40 - 20 0 20 40 60 80 100 120
21705-1 Temperature (°C) 21707-1 Temperature (°C)
Fig. 9 - High Output Voltage Drop vs. Temperature Fig. 11 - Output Low Voltage vs. Temperature

2.5 2.5
IF = 16 mA
IOH - High Output Current (A)

IF = 0 mA
IOL - Output Low Current (A)

Rg = 10 Ω, Cg = 20 nF Rg = 10 Ω, Cg = 20 nF
2.0 VCC = 15 V 2.0 VCC = 15 V
VEE = 0 V VEE = 0 V
1.5 1.5

1.0 1.0

0.5 0.5

0.0 0.0
- 40 - 20 0 20 40 60 80 100 120 - 40 - 20 0 20 40 60 80 100
21759 Temperature (°C) 21760 Temperature (°C)
Fig. 10 - High Output Current vs. Temperature Fig. 12 - Output Low Current vs. Temperature

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6 Rev. 1.1, 14-Jan-10
 VO3150A
0.5 A Output Current IGBT and Vishay Semiconductors
MOSFET Driver

2 2.5
IF = 0 mA IF = 10 mA for ICCH
VOL - Output Low Voltage (V)

IF = 0 mA for ICCL

ICC - Supply Current (mA)

VCC = 15 V
VEE = 0 V 25 °C 2.0 TA = 25 °C
1.5 VEE = 0 V
110 °C 1.5
ICCH
1
- 40 °C 1.0
ICCL
0.5
0.5

0 0.0
0.0 0.2 0.4 0.6 0.8 15 20 25 30 35
21761 IOL - Output Low Current (A) 21711 VCC - Supply Voltage (V)
Fig. 13 - Output Low Voltage vs. Output Low Current Fig. 16 - Supply Current vs. Supply Voltage

-1 5.0
(VOH - VCC) Output High Voltage

IF = 16 mA 4.5 VCC = 32 V
VCC = 15 V Current Threshold (mA) VEE = 0 V
VEE = 0 V 4.0 Output = open
- 1.5
IFLH - Low to High

3.5
Drop (V)

3.0
-2 2.5
2.0
- 40 °C
1.5
- 2.5
25 °C 1.0
110 °C
0.5
-3 0.0
0 0.2 0.4 0.6 0.8 - 40 - 20 0 20 40 60 80 100 120
21762 IOH - Output High Current (A) 21712-1 Temperature (°C)

Fig. 14 - Output High Voltage Dropvs. Output High Current Fig. 17 - Low to High Current Threshold vs. Temperature

2.5 35
TA = 25 °C
30
ICC - Supply Current (mA)

VO - Output Voltage (V)

2.0
ICCH 25
1.5 ICCL 20

15
1.0
IF = 16 mA for ICCH 10
0.5 IF = 0 mA for ICCL
VCC = 32 V 5
VEE = 0 V
0.0 0
- 40 - 20 0 20 40 60 80 100 120 0 1 2 3 4 5
21710-1 Temperature (°C) 21752 IF - Forward LED Current (mA)
Fig. 15 - Supply Current vs. Temperature Fig. 18 - Transfer Characteristics

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Rev. 1.1, 14-Jan-10 7
VO3150A
Vishay Semiconductors 0.5 A Output Current IGBT and
MOSFET Driver

500 500
IF = 10 mA, TA = 25 °C VCC = 30 V, VEE = 0 V
tp - Propagation Delay (ns)

tp - Propagation Delay (ns)

Rg = 47 Ω, Cg = 3 nF IF = 10 mA, TA = 25 °C
Duty cycle = 50 % 400 Cg = 3 nF
400 Duty cycle = 50 %
f = 10 kHz
f = 10 kHz
300
300
tPLH
200
tPHL
tPHL
200
tPLH 100

100 0
15 20 25 30 35 0 10 20 30 40 50
21736 VCC - Supply Voltage (V) 21739 Rg - Series Load Resistance (Ω)
Fig. 19 - Propagation Delay vs. Supply Voltage Fig. 22 - Propagation Delay vs. Series Load Resistance

500 500
VCC = 32 V, VEE = 0 V VCC = 30 V, VEE = 0 V
tp - Propagation Delay (ns)

tp - Propagation Delay (ns)

IF = 10 mA IF = 10 mA, TA = 25 °C
400 Rg = 47 Ω, Cg = 3 nF 400 Rg = 47 Ω
Duty cycle = 50 % Duty cycle = 50 %
f = 10 kHz tPHL f = 10 kHz
300 300
tPLH

200 tPLH 200

tPHL
100 100

0 0
- 40 - 15 10 35 60 85 110 0 20 40 60 80 100
21737 TA - Temperature (°C) 21740 Cg - Series Load Capacitance (nF)

Fig. 20 - Propagation Delay vs. Temperature Fig. 23 - Propagation Delay vs. Series Load Capacitance

500
VCC = 30 V, VEE = 0 V
tp - Propagation Delay (ns)

IF = 10 mA, TA = 25 °C
400 Rg = 47 Ω, Cg = 3 nF
Duty cycle = 50 %
f = 10 kHz
300
tPHL
200
tPLH
100

0
6 8 10 12 14 16
21738 IF - Forward LED Current (mA)

Fig. 21 - Propagation Delay vs. Forward LED Current

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8 Rev. 1.1, 14-Jan-10
 VO3150A
0.5 A Output Current IGBT and Vishay Semiconductors
MOSFET Driver

PACKAGE DIMENSIONS in millimeters

Pin one ID

4 3 2 1

6.48
6.81

5 6 7 8
ISO method A

9.63
9.91

0.76
1.14 7.62 typ.
0.79
4° typ.

3.30
3.81

5.84
1.27 10° 6.35
2.79
0.51 3° to 9° 3.30
0.46 0.89
0.56
2.54 typ. 0.2
0.3
i178006

Option 7

7.62 typ.

0.7 4.6
4.1

8 min.

8.4 min.

10.3 max. 18450-4

PACKAGE MARKING

VO3150A

V YWW H 68
21764-43

Note
• VDE logo is only marked on option 1 parts. Option information is not marked on the part.

Document Number: 81808 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com

Rev. 1.1, 14-Jan-10 9
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Vishay
Disclaimer

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Revision: 01-Jan-2022 1 Document Number: 91000