WFD7N65L Product Description

Silicon N-Channel MOSFET

Features D
� 7A,650V,RDS(on)(Max1.38Ω)@VGS=10V
� Low Crss (typical 15pF )
� Fast Switching Capability
� 100%Avalanche Tested G
� Isolation Voltage (VISO=4000V AC)
� Maximum Junction Temperature Range(150℃)
S

General Description
This Power MOSFET is produced using Winsemi's advancedplanar
stripe,VDMOS technology.this latest technology has beenespecially
designed to minimize on-state resistance, have a high rugged
avalanche characteristics .This devices is specially wellsuited for
half bridge and full bridge resonant topology line a electronic lamp
ballast, high efficiency switched mode power supplies, active power
factor correction.

Absolute Maximum Ratings

Symbol Parameter Value Units
VDSS Drain Source Voltage 650 V

Continuous Drain Current(@Tc=25℃) 7 A

ID
Continuous Drain Current(@Tc=100℃) 4.6 A
IDM Drain Current Pulsed (Note1) 28 A

VGS Gate to Source Voltage ±30 V

EAS Single Pulsed Avalanche Energy (Note2) 712 mJ

IAR Avalanche Current (Note1) 7 A

EAR Repetitive Avalanche Energy (Note1) 12.5 mJ

dv/dt Peak Diode Recovery dv /dt (Note3) 4.5 V/ ns

Total Power Dissipation(@Tc=25℃) 120 W

PD
Derating Factor above 25℃ 1.04 W/℃

TJ,Tstg Junction and Storage Temperature -55~150 ℃

Thermal Characteristics
Value
Symbol Parameter Units
Min Typ Max
RQJC Thermal Resistance , Junction -to -Case - - 1.04 ℃/W

RQJA Thermal Resistance , Junction-to -Ambient - - 62.5 ℃/W

WT-F126-Rev.A0 Dec.2015(B0)
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WFD7N65L Product Description
Silicon N-Channel MOSFET

Electrical Characteristics(Tc=25℃)
Characteristics Symbol Test Condition Min Type Max Unit
Gate leakage current IGSS VGS=±30V,VDS=0V - - ±100 nA
Silicon N-Channel MOSFET
Gate-source breakdown voltage V(BR)GSS IG=±10 µA,VDS=0V ±30 - - V

VDS=650V,VGS=0V - - 10 µA
Drain cut -off current IDSS
VDS=520V,Tc=125℃ - - 100 µA

Drain -source breakdown voltage V(BR)DSS ID=250 µA,VGS=0V 650 - - V

Breakdown Voltage temperature Coefficient ∆BVDSS/∆TJ ID=250 µA,Referenced to 25℃ - 0.65 - V/℃

Gate threshold voltage VGS(th) VDS=VGS,ID=250 µA 2 - 4 V

Drain -source ON resistance RDS(ON) VGS=10V,ID=3.5A - 1.0 1.38 Ω

Forward Transconductance gfs VDS=40V,ID=3.5A - 5.6 - S

Input capacitance Ciss VDS=25V, - 1621 1885

Reverse transfer capacitance Crss VGS=0V, - 15 20 pF

Output capacitance Coss f=1MHz - 126 172

Turn-on Rise time tr VDD=300V, - 35 80

Turn-on delay time td(on) ID=7A - 12 30

Switching time ns
Turn-off Fall time tf RG=25Ω - 40 91

Turn-off delay time td(off) (Note4,5) - 47 95

Total gate charge(gate-source VDD=480V,

Qg - 32 42
plus gate-drain) VGS=10V,
nC
Gate-source charge Qgs ID=7A - 6 -

Gate-drain("miller") Charge Qgd (Note4,5) - 15 -

Source-Drain Ratings and Characteristics(Ta=25℃)

Characteristics Symbol Test Condition Min Type Max Unit
Continuous drain reverse current IDR - - - 7 A

Pulse drain reverse current IDRP - - - 28 A

Forward voltage(diode) VDSF IDR=7A,VGS=0V - - 1.4 V

Reverse recovery time trr IDR=7A,VGS=0V, - 346 - ns

Reverse recovery charge Qrr dIDR / dt =100 A / µs - 3.2 - µC

Note 1.Repeativity rating :pulse width limited by junction temperature

2.L=25mH IAS=7A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤7.5A,di/dt≤300A/us,VDD<BVDSS,Starting TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution

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 WFD7N65L Product Description
Silicon N-Channel MOSFET

VG S
To p 15V
10V
8V 10
10 7V
6 .5 V 2 5 °C
6V
Silicon N-Channel MOSFET 5 .5 V
B ot t om 5 V

1 5 0 °C
I D[A]

I D[A]
1

Note:
1.250µs pulse test Note:
1 1.250µs pulse test
2 .Tc =2 5 °C
2.VD S =40V

0 .1
1 10 2 4 6 8 10
VD S [V] V G S [V]

Fig.1 On Region Characteristics Fig.2 Transfer Characteristics

1 .4 0

1 .3 5
10

1 .3 0
R DS(on) [Ω ]

1 .2 5 V G S =10V
I DR [A]

2 5 °C
1 .2 0
V G S =20V
1 .1 5 1

1 .1 0
1 5 0 °C
Notes:
1 .0 5 1.250µs pulse test
2.VG S =0V
N o t e : Tj = 2 5° C
1 .0 0

0 .9 5 0 .1
0 2 4 6 8 10 0 .4 0 .5 0 .6 0 .7 0 .8 0 .9 1 .0 1 .1 1 .2 1 .3 1 .4 1 .5

I D [A] VS D [V]
Fig.3 On-Resistance Variation vs Fig.4 Body Diode Forward Voltage
Drain Current and Gate Voltage Variation with Source Current
and Temperature

2000 12
Ciss=Cgs+Cgd(Cds=shorted) VD S =480V
Coss=Cds+Cgd
C rss= C gd
10 V D S =300V
1600
V GS Gate Source Voltage[V]

C is s
V D S =120V
Ca pa cit anc e[ pF ]

8
1200
C o ss

800
Note:
1.V G S =0V
4
C rss
2.f= 1M Hz

400
2

0
-1 0 1 0
10 10 10
0 2 4 6 8 10 12 14 16 18 20
VD S [V] Qg Toltal Gate Charge[nC]
Fig.5 Capacitance Characteristics Fig.6 Gate Charge Characteristics

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 WFD7N65L Product Description
Silicon N-Channel MOSFET

1 .2 3 .0

2 .5
BV DS (Normalixed)

1 .1
Silicon N-Channel MOSFET

R DS(on) (Normalized)
2 .0

1 .0 1 .5

0 .5

0 .9 Notes:
Notes:
0 .5 1.VG S =10V
1.VG S =0V 2.I D=3.5A
2.I D=250µA
0 .8 0 .0
-7 5 -5 0 -2 5 0 25 50 75 100 125 150 -7 5 -5 0 -2 5 0 25 50 75 100 125 150

T J [°C] TJ [°C]

Fig.7 Breakdown Voltage Variation Fig.8 On-Resistance Variation

vs. Temperature vs. Temperature
2 8
10
O peration in This Area
is Lim ited by R DS (ON)
10µ s
10 1 100µ s 6
Ca pa cita nce [ pF ]

1m s
10m s
100m s
ID [A ]

10 0 1s 4
DC

-1 2
10
Notes:
1 .Tc= 2 5 °C
2 .T J =150°C
-2 3.S ingle pulse
10 0
-1 10 0 10 1 10 2 25 50 75 100 125 150
10
VD S Drain-S ource Voltage[V ] TC [° C ]
Fig.9 Maximum Safe Operation Area Fig.10 Maximum Drain Current vs
Case Temperature
ZθJC (t),Thermal Response

D = 0 .5
100
0 .2 * N o te ：
。
1.Z θ J C (t)=0.85 C/W Max.
0 .1 2.Duty Factor,D=t1/t2
3.T JM-T C=P DM* Z θJ C (t)

0 .0 5
-1
10
0 .0 2
PD M
0 .0 1
t1
Single pulse t2

1 0 -2

1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 100 101
t1 [sec]

Fig.11 Transient Thermal Response Curve

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WFD7N65L Product Description
Silicon N-Channel MOSFET

Silicon N-Channel MOSFET VG S

Same type
50K Ω as D U T
Qg
12V 200nF
300nF 10V

VG S VD S
Qg s Qg d

DUT
3m A

Ch a rg e

Fig.12 Gate Test Circuit & Waveform

RL VD S
VD S 90%

VD D
VG S
RG

10%
VG S
10V DUT
td(on) tr td(off) tf
to n to f f

Fig.13 Resistive Switching Test Circuit & Waveform

L 1 B V DSS
VD S EA S = L IA S 2
2 B V D S S - VD D

B V DSS
ID
IA S
RG
VD D I D( t)

10V DUT VD S( t )
VD D
tp
tp Tim e

Fig.14 Unclamped Inductive Switching Test Circuit & Waveform

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WFD7N65L Product Description
Silicon N-Channel MOSFET

Silicon N-Channel MOSFET

DUT

VD S

IS D
L

Driver
RG
Sam e Type
as DUT VD D

VG S
dv/dt controlled by RG
IS D conteolled by pulse period

VG S Gate Pulse Width

D =
Gate Pulse Period 10V
(Driver)

IF M ,Body Diode Forward Current

IS D
(DUT) di/dt

IR M

Body Diode Reverse Current

VD S
(DUT) Body Diode Recovery dv/dt

VS D VD D

Body Diode
Forward Voltage Drop

Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform

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WFD7N65L Product Description
Silicon N-Channel MOSFET

TO-252 Package Dimension

Silicon N-Channel MOSFET

2.3±0.20

0.852±0.15
6.60±0.20
0.508±0.05
5.32±0.20

6.10±0.20

1.00±0.10

0.85±0.20
0.80±0.20

光面

2.848±0.30
2.286 2.286 0.508±0.05
0.76±0.10

Note:
1.plastic body is not marked as smooth Ra=0.1 ；
matt Ra=0.8
2.unmarked tolerance ± 0.15 ， unlabeled corner
Rmax=0.25
3.plastic body without defect ， shrinkage ， cracks，
bubbles and other defects
4.units dimension mm

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WFD7N65L Product Description
Silicon N-Channel MOSFET

NOTE:
1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any
question, please don't be hesitate to contact us.
Silicon N-Channel
2.Please MOSFET
do not exceed the absolute maximum ratings of the device when circuit designing.
3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is
subject to change without prior notice.

CONTACT:
Winsemi Microelectronics Co., Ltd.

ADD:Futian District, ShenZhen Tian An Cyber Tech Plaza two East Wing 1002
Post Code : 518040
Tel : +86-755-8250 6288
FAX : +86-755-8250 6299
Web Site : www.winsemi.com

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