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Mosfet equivalent book download

2301 Transistor Equivalent Substitute - MOSFET Cross-Reference Search 2301 Datasheet (PDF)0.1. rn2301 rn2302 rn2304 rn2305 rn2306.pdf Size: 454K # Toshiba # RN2301~RN2306 TOSHIBA Transistor Silicon PNP Type Epitaxial (process) With integrated bias resistors Simplify circuit design Reduce a quantity of parts and production process
Complementary to RN1301to1306 Circuit equivalent Bias Resi0.2. si2301cds.pdf Dimensions:193K _vishay Si2301CDSVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a VGS = VGS2.5 V RoHS*- 2.0COMPLIANTTO-236(SOT-23)G 13 DS 2Top ViewSi2301
BDS (L1)** Marking MarkingVENCY 19 _vishay Si2301CDSVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY According to IEC 61249-2-21VDS (V) RDS(on) )(ID (A)a Qg (Typ.)Definition0.112 to VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET- 20 3.3 nC Complies with RoHS Directive 2002/95/EC0.142 to VGS = -
2.5 V - 2.7APPLICATIONS Charging SwitchTO-236 (SOT-23) G 0.9 dmg2301u.pdf Size: 148K _diodes DMEL MOSFET Click here to visit our online spice pattern database. Features Mechanical data Low resistance case: SOT-23 Low input capacity Case material: Printed plastic, green molding compound. UL Flammability Classification Rating 94V-0
Quick Switching Speed Moisture sensitivity: Level 1 for J-STD-020D L0.10 dmg2301l.pdf Dimensions: 527K _diodes DMG2301L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and advantages Low On-Resistance ID max Low input capacity V(BR)D RDS(ON) max TA = +25C fast switching speed Totally lead-free &@ VGS =
-2.5V De0.11 dmg2301lk.pdf Dimensions: 507K _diodes DMG2301LK P-CHANNEL P-CHANNELMODE MOSFET Product Summary Features and advantages Low On-Resistance ID Max Low BVDSS RDS(ON) Max TA = +25C fast switching speed ESD protected Gate 160m @ VGS = -4.5V -2.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
-20V Halogen and Antimony Free. Green device (note 3) 2100.12. > > > > > > > > > > > > > > > > > > > > > > > > > > > > < > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > < > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > > >
324K MCC Micro Commercial ComponentsTM20736 Marilla Street Chatsworth Micro Commercial ComponentsCA 91311SI2301 Phone: (818) 701-4933Fax: (818) 701-4939 P-Channel characteristics -20V,-2.8A, RDS(ON)=120m@VGS=-4.5V RDS(ON)=150m@VGS= ut2301z.pdf Sizes:159K _utc UNISONIC TECHNOLOGIES CO., LTD UT2301Z Power
MOSFET 2.3A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION UTC UT2301Z is a P-channel of MOSFET empowerment with fast switching speed, low on-resistance and favorable stabilization. Can be used in commercial and industrial surface mounting applications and suitable for low voltage applications such as DC/DC
co0.16. UNISONIC TECHNOLOGIES CO., LTD UT2301 Power MOSFET 2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPATION UTC UT2301 is P-channel power enhancement mode MOSFET, designed in grades With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface
mounting applications and suitable for applicationssu0.17. format:391K _secos SMG2301-2.6A, -20V,RDS(ON) 130m Elektronische Bauelemente P-Channel Enhancement Mos.FETRoHS Mos.FETRoHSProduct A suffix of -C specifies alogen & RoHS compliantSC-59A Dim MinDescription LA 2.70 3.103B 1.40 1.60 The SMG2301 is universally preferred
for all commercial applications SBTop View2 1C 1.00 1.30 surface mounting industry and suitable for l0.18 smg2301p.pdf Dimensions:751K _secos SMG2301 A suffix of -C specifies alogen and lead-free DESCRIPTION SC-59 MOSFETs mount miniature surface use a high-density cellular trench process to provide low RDS (on) and to ensure the loss of
power and heat dissipation ALminimal. Typical applications 330.19 tsm2301bcx.pdf Size::119K _taiwansemi 0.20 tsm2301.pdf Size: 118K _taiwansemi 0.21 tsm2301acx tsm2301cx.pdf Size: 340K _taiwansemi TSM2301 20V P-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m ID (A) 1. Gate 130 @ VGS = -4.5V -2.8 2.
Source -20 3. _ The power MOSFET of TrenchFET GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load switch for portable devices z DC/DC Converter MARKING: Score S1Maximum (Ta=25 if notindicated) Value unit of the symbol of the parameter VDS -200.24 cjl2301.pdf Dimensions: 2604K _jiangsu JIANGSU CHANGJING ELECTRONICS
TECHNOLOGY CO,. LTD SOT-23-6L SOT-23-6LMOSFETS CJL2301 Dual P-Channel ID MOSFET V(BR)DSS RDS(on)MAX SOT-23-6L 90m@-4.5V125m@-2.5V -20V-2.3A200m@-1.8VAPPLICATION Converter DC/DC Power TrenchFET MOSFET Robust and reliable. DLead free product is acquired. SOT-23 package. GDSGSSOT-23ABSOLUTE TAXES
MASSIMO = 25 C unless otherwise indicatedParameter Symbol Limit UnitsDrain-Sou0.27. cen2301.pdf Size:416K _cet CEN2301P-Channel Enhancement Modes Field Effect TransistorFEATURES-20V, -2.7A, RDS(ON) = 110m @VGS = cell den2.5V(ON) = Robust and reliable. Lead-free plating; RoHS compliant. SOT-23-T package. GDSGSSOT-23-
TABSOLUT TAXES MASSIMO = 25 C unless otherwise notedParameter Symbol Limit Units0.28. M.I.P.I.C.I.C.I.C.I.C.I.C.I.C.I.C.I.C.C.I.C.C.I.C.I.C.I.C.I.C.C.I.C.C.I.C.C.I.C.C.I.C.C.I.C.C.C.I.C.C.C.C.C.C.Co., Ltd.Guilin Strong Micro-Electronics Co., Ltd.GMS2301SOT-23 (SOT-23 Field Effect Transistors)P-Channel Enhancement-Mode MOS MOSMOS
FETsP-Channel Enhancement-Mode MOS FETsP MOSPMOS0.30 wtc2301.pdf Size:566K _wietron WTC2301P-Channel Enhancement DRAIN CURRENT3 DRAINMode Power MOSFET -2.3 AMPERESP b Lead(Pb)-Free DRAIN SOURCE SOD-123H Application mounted on low profile surface to optimize0.32 h2301n.pdf Dimensions:88K _hsmc Release
date: 2006.07.01 Update date: 2006.07.11 MICROELECTRONICS CORP. Page No: 1/4 H2301N Assignment & Symbol H2301N 33-Lead Plastic SOT-23 P-Channel Enhancement-Mode MOSFET -(20V, -2.2A) Package code: N Pin 1: Gate 2: PHYSTEM INSTITUTIONP-CHANNEL P-CHANNEL P-CHANNEL Corp. POWER MOSFET Requirement of BVDSS
BVDSSSmall Outline RDS(ON) 130mD Surface Mount Device ID - 2.6ASSOT-23GDescriptionDAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,Glow on-resistance and cost-effec0.36. ap2301n-hf.pdf Size:59K _ape AP2301N-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT
MODEElectronics 2.5V Gate Drive Capable Load Power Drive BVDSS -20VD Small Outline RDS(ON) 130m Surface Mount Device ID -2.3AS RoHS CompOTliant & Halogen-Free ap2301gn-hf.pdf Dimensions:97K _ape AP2301GN-HFHalogen-Free productAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple
transmission request BVDSS -20V Small Outline RDS(ON) 130mD Surface Mount Device ID - 2.6A RoHS CompliantOT-23GDescription AP2301Aggan-Hf.pdf Measures:56K _ape AP2301AGN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple transmission request BVDSS -20VD
small package Outline RDS(ON) 97m Surface Mount Device ID - 3.3AS RoHS Compliant ap2301en-hf.pdf Dimensions:96K _ape AP2301EN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENTPOWER MOSFET Capable of 2.5V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 130m Surface Mount Device-2.3AS Compliant
RoHS & Halogen-FreeSOT-23SGDDescription APEC Advanced Power MOSFET provide the designer with the best combination of rapid switching0.41 am2301pe.pdf Size:84K analog_power Analog Power AM2301PEP-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs use a process of cell trince Typical applications are DC-DC
converters and power management in laptop and 0.130 @ VGS = -4.5V 2.6-20 battery powered product0.42 am2301p.pdf Dimensions: 306K analog_power Analog Power AM2301PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) IDch (A) low thermal impedance -20190 @ VGS = -2.5V -2.2 Fast switching speed
SOT-23 Typical applications: DC/DC Load Switches Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLE0.43 afp2301a.pdf Dimensions:651K _alfa-mos AFP2301A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301A, P-Channel Super cellular design for extremely high
density These devices are particularly 0.44 afp2301as.pdf Dimensions:651K _alfa-mos AFP2301AS Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301AS, P-Channel enhancement mode 20V/-2.4A,RDS(ON)=125m@VGS=-4.5V MOSFET, uses Advanced Trench Technology charge These devices
are particularl0.45 afp2301.pdf Size: 519K _alfa-mos AFP2301 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301, P-Channel enhancement mode 20V/-3.0A,RDS(ON)=105m@VGS=-4.5V MOSFET, uses advanced trincea technologyto provide excellent rds (on,) low gate charge. == sync,
corrected by elderman == : c322s3 cystech electronics corp. publication date: 2013.08.29 revised date: 2013.09.09 page no: 1/8 20v P-Channel enhancement mode mosfet bvdss -20vmtp2301s3 id -1.6A75m(tip) rdson (MAX)@VGS= Dimensions-4.5V, ID=-1.6 : c322n3 cystech electronics corp. publication date: 2004.04.05 update date:2018.08.31 page
no: 1/9 20v P-Channel enhancement mode mosfet bvds -20v mtp2301n3 ID@TA=25C, VGS=-4.5V -3.4A 79m rdson (TYP)@VGS=-ID=2A Advanced technology of the trench process High density cellular design for ultra low on res0.51.2301l.pdf Size: 1274K _goford GOFORD2301LDESCRIPTION DThe 2301L uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with Gvoltages gate starting from 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL CHARACTERISTICS VDSS RDS(ON) RDS(ON) ID(Typ) @-2.5V @-4.5V (Typ)-20V64m 89 m -3A High Power0.52. 2301.pdf Size: 1181K _goford GOFORD2301DESC DThe 2301
uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with Gvoltages gate starting from 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL CHARACTERISTICS diagram diagram diagram VDSS RDS(ON) RDS(ON) ID(Typ) @-2.5V @-4.5V (Typ)-20V64m 89 m -3A High
Power a0.53. 2301h.pdf Size: 2066K _goford DIORID This device is suitable for use as a load switch or in PWM applications. VDS S ID R DS (ON) (m) MaxR ugged and reliable.60 @ VG S = -4.5V-20V -3.4A80 @ VG S = -2.5VS OT-23 package.105 @ VG S = -1.8VDS OT-23GSAB S OLUTE MAXI0.55. sts2301a.pdf Dimensions:101K _samhop
GreenProductSTS2301cellular design for low RDS (ON). VDSS ID RDS(ON) (m) TypRugged and reliable. 95 @ VGS=-4.5VSuface Mount Package.-20V -2.6A130 @ VGS=-2.5VDS OT23-3LDGSGS (TC=25C unless otherwise otherwise otherwise otherwise otherwise otherwisemaximum RAT0.56. ssf2301a.pdf Dimensions:275K _silikron
ssf2301addescription ssf2301a uses advanced trench technology to provide excellent rds (on,) low gate charge and operation with gate tensions starting from 2.5V. This device is suitable gfor use as a load switch or in pwm applications. sschematic diagram general characteristics vds = -20V,ID = -4a RDS(ON) 0.57. ssf2301b.pdf size: 282k _silikron
ssf2301bddescription ssf2301b uses advanced trench technology to provide excellent rds (on,) low gate charge and operation with gate tensions from 2.5V. This device is suitable gfor use as a load switch or in pwm applications. sschematic diagram general characteristics vds = -20V,ID = -2.8A RDS(ON) 0.58. ssf2301.pdf size: 566k _silikron ssf2301
main product characteristics: dvdss -20v g RDS(on) 60m (tip.) sid -3a marking and pin SOT-23 schematic diagram assignme nt characteristics and advantages: advanced technology of special mosfet process designed for pwm applications, load switching and ultra low general purpose on-resistance with low gate charge fast switch and reverse body
re0.59. cs2301 sot-23.pdf size: 300k _can-sheng shenzhen cansheng industry development co., ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate transistors 2301 mosfet (P-Channel) characteristics program rating mosfet tmaximum (TA=25 unless otherwise specified) parameter of symbol unit valuevds voltage of Drain-Source -20 vgs
brcs2301ma.pdf Dimensions:709K _blue-rocket-elect brcs2301ma Rev.C May.-2020 sheet / descriptions SOT-23 p- channel mosfet plastic in a package s. / features r SOT-23 DS(ON)Super dense cell design for rds package (ON),SOT-23. hf product / applications 0.61. brcs2301ama.pdf Dimensions:709KBRCS2301AMA Rev.B Apr.-2020 DATA SHEET /
Descriptions SOT-23 P MOS P- CHANNEL MOSFET in a plastic package SOT-23. / Features R SOT-23 DS(ON)Super dense cell design for low RDS (ON),SOT-23 packag. Product without halogen. /0.62. si2301.pdf Dimensions:795K _blue-rocket-elect SI2301 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 P MOS P- CHANNEL MOSFET in a SOT-
23 Plastic Package. / Features , MOS Trench FET Power MOSFET 100% Rg Tested. / Applications Mainly displaying screen drive applications. / Equivalen0.63. INSTITUTION OF THE EUROPEAN UNION Product Profile1.1 General descriptionP-channel Field-Effect Transistor (FET) enhancement mode in a small SOT23 (TO-236AB) Surface-Mounted
Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and advantages 1.8 V RDSon rated for Low Tension Door Driv0.67. ki2301ds.pdf Size:351K _tysemi SMD Type ICSMD Type MOSFESMD Type MOSFETSMD Type MOSFETSMD Type MOSFETproduct KI2301DSSOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13 Features VDS
VDS= -20V RDS(ON) 100m (VGS = -4.5V)1 2+0.1+0.05 RDS(ON) 150m (VGS = -2.5V) 0.95-0.1 0.1-0.01+0.11.9-0.1D 1.Base1.Base1. Gate2.Emitter2.Emitter2.Emitter2. I'm sorry. si2301ds-3.pdf Size: 1968K _kexin SMD Type MOSFETP-Channel Enhancement MOSFET SI2301DS (KI2301DS)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features3 VDS
(V) =-20V RDS(ON) 100m (VGS =-4.5V) RDS(ON Source3. DEN-CYN-TEN-C Source3. Drain Absolute Max ratings Ta = 25Parameter Symbol 5 0.73. ki2301t.pdf Size: 322K _kexin SMD Type MOSFETP-Channel EnhancementKI2301TSOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) =-12V ID =-2.8 A1 2 RDS(ON) 115m (VGS
=-4.5V)+0.1+0.050.95-0.1 0.1 -0.011.9+0.1 RDS(ON) 160m Gate2.Sour Drain Absolute Max Ratings Ta = 25Parameter Drain-Sou0.74 Symbol Assessment Unit. ki2301bds.pdf Dimensions: VHP-SYD-SYDtransistor effect field of power is produced using -20V/-2.0A, R =130m(typ.)@V =-2.5VDS(ON) GShigh cell density. De0.79 high density cell
advanced trench technology. af2301p.pdf Size:133K _anachip AF2301P20V P-Channel Enhancement MOSFECT Mode Features Product Summary - Advanced Trim Trim Process Technology VDS = - 20V - High Density cellular design for RDS ultra low on-resistance (on), VGS@-4.5V, IDS@-2.8A =130m. Description Power MOSFET DThe BLM2301 uses
advanced trench technology to provide excellent R , low gate charge and operation with DS(ON)Gvoltages gate from 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Chart diagram V = -20V, I = Servo DS DR 0.81. cht2301gp.pdf Dimensions:272K _chenmko CHENMKO ENTERPRISE
CO.,LTDCHT2301GPSURFACE MOUNT P-Channel Enhancement * MOSFET gate driver feeder.* Other switching applications. SOT-23FETY Small type of surface mounting. (SOT-23)* High density cellular design for RDS (ON). * Suitable for high packing density* Rugged 0.82. chm2301esgp.pdf Size: 132K _chenmko CHENMKO ENTERPRISE
CO.,LTDCHM2301ESGPSURFACE MOUNT P-Channel Enhancement Field Effect Transistor Mode VOLTAGE 20 Volt CURRENT Design 2.8 AmpereAPPLICATION* Po rtable*OT-23 Suitable for high packing density* Rugged and reliable.(1)* Capable high saturation current0.83. cht2301wgp.pdf Dimensions:218K _chenmko CHENMKO ENTERPRISE
CO.,LTDCHT2301WGPSURFACE MOUNTEnhancement Field Effect Transistor Mode VOLTAGE 20 Volt CURRENT 2.3 AmpereAPPLICATION* Servo Engine Control. * Power powerBring them.* Other switching applications. SC-70/SOT-323FEATURE* Small surface mounting type (SC-70/SOT-323)* High density cellular design for RDS (ON). * Suitable
for high packaging dens0.84. cj2301-hf.pdf Size: 117K _comchip MOSFETComchips M i o d e s p i s tCJ2301-HFP-ChannelRoHS DeviceHalogen FreeSOT-23Features - P-Channel 20-V(D-S) MOSF0.018(3.00)0.DC(2.80) - Trench FET Power MOSFET.3 - Load switch - Terminals: Solde0.85. cpt2301.pdf Dimensions:259K _crownpo CTP2301 Crownpo
TechnologyCTP2301 P-Channel Enhancement Mode MOSFETTA Description -20V/-2.3A,RDS(ON) =130 m @VGS=-4.5V The CTP2301 is the P-Channel logic improvement of transistor power field effect are produced using -20 Super high density cell design for extremely low RDS (ON0.86. gsm2301.pdf Size: 477K _globaltech_semi 20V P-Channel
Enhancement Mode MOSFET Product Description Features GSM2301, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=105m@VGS=-4.5V MOSFET, uses Advanced Trench Technology at -20V/-2.4A,RDS(ON)=155m@VGS=-2.5V These devices are particularly suitable for low low RDS (ON) volta0.87. gsm2301as.pdf Dimensions: 877K
_globaltech_semi 20V P-Channel Enhancement Features GSM2301AS, P-Channel enhancement mode -20V/-2.4A,RDS(ON)=125m@VGS=-4.5V MOSFET, use Advanced Trench Technology at -20V/-2.0A,RDS(ON)=170m@VGS=-2.5V to provide excellent low RDS( Super high density cell design for extremely low RDS (ON) These devices are particularly
suitable for low0.88. gsm2301a.pdf Dimensions:816K _globaltech_semi 20V P-Channel Enhancement Mode MOSFET Product Description Features -20V/-2.6A,RDS(ON)=120m@VGS=-4.5V GSM2301A, P-Channel enhancement modeMOSFET, uses advanced Trench technology for excellent high density cell design to provide extremely excellent RDS
(ON), low gate charge. Low RDS (ON) These devices are particularly suitable for low0.89. gsm2301s.pdf Dimensions: 827K _globaltech_semi 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301S, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=120m@VGS=-4.5V MOSFET, use Advanced Trench Technology at
-20V/-2.0A,RDS(ON)=170m@VGS=- mmp2301.pdf Dimensions: 152K MMP2301 Data sheetM-MOS Hong Kong Limited20V P-Channel Enhancement-Mode MOSFETVDS= -20VRDS(ON), Vgs@-4.5V, Ids@-2.8A = 100mRDS(ON), Vgs@-2.5V, Ids@-2.0A = 150mRDS(ON), Vgs High density Cellular design for ultra low on-resistanceSOT- 23 Internal
diagram P-Channel MOSFETM0.91. stp2301.pdf Dimensions:371K _semtron STP2301 -20V P-Channel Enlargement mode MOSFETDESCCTIONFEATURE STP2301 is the improvement of the logic P-Channel -20V/-3.0A, RDS advanced trench technology to provide excellent RDS (ON). low gate charge and Super h0.92. ssm2301gn.pdf Dimensions: 150K
_Silicon_standard SSM2301NP-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple BV -20VDSSSmall performance package RDS(ON) 130mDSurface-mount device ID -2.3ASSOT-23GDescription DPower MOSF SThe SOT-23 package is widely preferred for co0.93. st2301a.pdf Dimensions:186KST2301A P Modo MOSFET -3.2A DESCRIPTION
ST2301A is the effect transistor of the P-Channel logic enhancing power field that is producedhigh cell density, DMOS trench technology. This high density process is particularly customized to minimize state resistance. These devices are especially suitable for low voltage application such as cell phone and not0.94. tp2301pr.pdf Dimensions:322K
FREE PRODUCTS: _agertech ATM2301PSAP-Channel Enhancement Transistor field effect modes Exhaust voltage: -20V Drainage current: -2.5AFeatures Trench FET Power MOSFET Excellent R and Low Gate ChargeDS(on)R 0.96. ap2301.pdf Dimensions:1595K _ allpower 2301 P-Channel 20-V(D-S) MOSFET DHEET DESCRIPTION DThe 2301 uses
advanced trench technology to provide excellent RDS(ON), low gate charge and operation with Gvoltages gate starting from 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL CHARACTERISTICS diagram diagram diagram VDSS RDS (ON) RDS (ON) ID (Typ) @-2.5V @-4.5V (Typ)-20V64m 0.97. as Plastic2301.pdf
Size:1796K _anbon AS2301 POTF-23ET S SOURCE load switch for portable devices 3. DC/DC converter DRAIN MARKING: A1 Maximum Score (Ta=25 if not otherwise specified) Characterizing symbol Max unit Drain-Source Voltage BVDSS -20 V-0.98 asdm2301za.pdf Size: 830K _ascend ASDM2301ZA20V P-CHANNEL MOSFET Features Product
Summary Product delivery capacity with high power and current RDS (ON) RDS (ON) RDS (ON) Lead-free product is acquired(Tip) (Tip) @-4.5V @-2.5V Surface mounting package-20V65m 83m -3AApplication PWM Applications Power Managementtop viewDGSOT-23 Absolute Maximum Ratings (TA=25unless other0.99. si2301s.pdf Dimensions:1898K
_born SI2301SMOSFET ROHSP-ChannelMOSFET SOT-23-Low characteristics RDS(on) @VGS=-4.5V -3.3V Logic Level Control P Channel SOT23 Pb-Free package, RoHS Compliant Applications V R Typ I Max (BR)DSS DS(ON) D High-wall load switch 125m @ 4.5V Switching circuits -20V -2.3A Driver line Size 140m @ 3.3V High Density Cell Design
for Ultra Low On-Resistance Maximum Evaluations & Thermal Features (Ratings at 25 ambient temperature unless otherwise specified.) Limit of the symbol of UnitDrain-Source Voltage VDS -20V as2301.pdf Size:419K _fms P-Channel Enhancement Mode MOSFET Formosa MSAS2301 Product Summary V(BR)DSS RDS(on)MAX ID 64m@-4.5V -20V
80m@-2.5V -3.4A 95m@-1.8V Application of Functionality Advanced Trim Process Technology Converter Cargo Switch for Portable Devices High Density DesignYes. id . gp2301.pdf size: 790k _gp gp2301 20v P-Channel mosfet SOT-23 v r i (BR)DSS DS(on)MAX D110m@-4.5V -20v -2.3A 140m@-2.5V feature trenchfet power mosfet greate Low Gate
Charge Schematic Diagram Application DC/DC Converter Cargo Switch for Portable Devices Battery Switch MARKING: ABSOLUTE MAXIMUM RATINGS (Ta=25 unless otherwise known0.105. si2301.pdf Dimensions: 279K _guangdong_hottech MosfetsFEATURESSI2301P-Channel MOSFETHigh dense cellular design for extremely low
RDS(ON)Rugged and reliable Case material: Printed plastic. RGS 8 V2.FonteSOT-23Drain Current (Continuous) ID -2.3 A 3.Drain1D0.106.hm I -3 A DThe HSS2301B meet the RoHS and Green Product requirement with full function ap0.107 reliability. hss2301c.pdf Size:1062K _huashuo HSS2301C P-Ch 20V Quick Switching MOSFETs Description
Product Summary The HSS2301C is the high cell density has trenched P-V -20 V DSch MOSFETs, which provides excellent RDSON and efficiency for most small power switching applications R 130 m DS(ON), switch The -2 A DThe HSS2301C meet the RoHS and Green Product requirement with the complete reliability of the a0.108 function.
hx2301a.pdf Dimensions: 181K _hx SOT-23 Plastic-encapsulated transmittersHX2301A MOSFET (P-Channel)FEATURESPWM applications Load switch Power management MARKING: A1SHBMAXIMUM RATINGS (TA=25 if not otherwise indicated) Symbol Parameter Valore VDS Drain-Source Voltage150 Tstg Storage temperature 0.109. hx2301.pdf
Dimensions:316K _hx SOT-23 -3 Transmitters for encapsulated HX2301 MOSFET (P-Channel)FEATURES TrenchFET MARKET Power: A1SHBMAXIMUM RATINGS (TA=25 unless otherwise specified) Symbolunit of valuevds discharge voltage -20 v v vgs vacuum voltage 12 V-2.8 aids drainage current pd power dissipation 1 w tj junction temperature
150 tstg storage temperature -55-150 and

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