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ISL95338
Bidirectional Buck-Boost Voltage Regulator
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Contents
1. Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.2 Simplified Application Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1.3 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1.4 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
1.5 Pin Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2. Specifications. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.1 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.2 Thermal Information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.3 Recommended Operation Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2.4 Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2.5 SMBus Timing Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6. Application Information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
6.1 R3 Modulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
6.2 ISL95338 Bidirectional Buck-Boost Voltage Regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
6.3 Soft-Start . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
6.4 Programming Options . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
6.5 DE Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
6.6 Forward Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
6.7 Reverse Mode for USB OTG (On-the-Go). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
6.8 Fast REF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
6.9 Fast Swap . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
6.10 Way Overcurrent Protection (WOCP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
6.11 ADP Input Overvoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
8. Layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
9. Revision History. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
1. Overview
1.1 Block Diagram
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COMPR
COMPF
RVSPG
ADDR1
ADDR0
PROG
VOUT
REF
32 31 30 29 28 27 26 25
CSON 1 24 FRWPG
CSOP 2 23 PROCHOT#
VOUTS 3 22 SCL
PHASE2 6 19 FRWEN
LGATE2 7 18 VDD
VDDP 8 17 DCIN
9 10 11 12 13 14
CSIN 15 16
LGATE1
BOOT1
PHASE1
UGATE1
ADPS
ADP
CSIP
2. Specifications
2.1 Absolute Maximum Ratings
Parameter Minimum Maximum Unit
CSIP, CSIN, DCIN, ADPS, ADP -0.3 +30 V
CSIP 0.3 ADP + 2 V
PHASE1 GND - 0.3 +30 V
PHASE1 GND - 2 (<20ns) +30 V
UGATE1 PHASE1 - 0.3 BOOT1 + 0.3 V
PHASE2 GND - 0.3 +30 V
PHASE2 GND - 2 (<20ns) +30 V
UGATE2 PHASE2 - 0.3 BOOT2 + 0.3 V
LGATE1, LGATE2 GND - 0.3 VDDP + 0.3 V
LGATE1, LGATE2 GND - 2 (<20ns) VDDP + 0.3 V
VOUT, VOUTS, CSOP, CSON -0.3 +24 V
VDD, VDDP -0.3V +6.5 V
BOOT1, BOOT2 - 0.3 VDDP + 25 V
BOOT1 (PHASE1 - 0.3) PHASE1 + 6.5 V
BOOT2 (PHASE2 - 0.3) PHASE2 + 6.5 V
BOOT1-PHASE1, BOOT2-PHASE2 -0.3 +6.5 V
COMPR, COMPF, REF, PROG -0.3 +6.5 V
RVSEN, FRWEN, ADDR0, ADDR1 -0.3 +6.5 V
FRWPG, PROCHOT#, RVSPG -0.3 +6.5 V
SCL, SDA -0.3 +6.5 V
CSIP-CSIN, CSOP-CSON -0.3 +0.3 V
RVSEN, FRWEN, SDA, SCL, FRWPG, RVSPG, PROCHOT# 2 mA
ESD Rating Rating Unit
Human Body Model (Tested per JS-001-2014) 2 kV
Machine Model (Tested per JESD22-A115C) 200 V
Charged Device Model (Tested per JS-002-2014) 1 kV
Latch-Up (Tested per JESD78E) 100 mA
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions can adversely
impact product reliability and result in failures not covered by warranty.
Operating conditions: ADP = CSIP = CSIN = 4V and 23V, VOUTS = VOUT = CSOP = CSON = 8V, unless otherwise noted. Boldface limits
apply across the junction temperature range, -10°C to +125°C unless otherwise specified. (Continued)
Min Max
Parameter Symbol Test Conditions (Note 6) Typ (Note 6) Unit
ADP Current PROCHOT# Threshold IADP_HOT_TH10 ACProchot = 0x0A80H (2688mA) 2688 mA
Rs1 = 20mΩ
-3.0 +3.0 %
ACProchot = 0x0400H (1024mA) 1024 mA
-6.0 +6.0 %
Voltage Regulation
Output Voltage Accuracy Forward (HRTZ) Measured at VOUTS, 8V and up -1 +1 %
Measured at VOUTS, 4V to 8V -1.5 +1.5 %
Output Voltage Accuracy Reverse (HRTZ) Measured at ADPS, 8V and up -1 +1 %
Measured at ADPS, 4V to 8V -1.5 +1.5 %
Output Voltage Accuracy Forward (IRTZ) Measured at VOUTS, 8V and up -2 +2 %
Measured at VOUTS, 4V to 8V -1.5 +1.5 %
Output Voltage Accuracy Reverse (IRTZ) Measured at ADPS, 8V and up -2 +2 %
Measured at ADPS, 4V to 8V -3 +3 %
Minimum Input Voltage Accuracy Measured at ADPS -3 +3 V
VOUT Current Regulation, Rs2 = 10mΩ
VOUT Current Accuracy |CSOP - CSON| = 60mV 6 A
-3 +3 %
|CSOP - CSON| = 20mV 2 A
-5 +5 %
|CSOP - CSON| = 10mV 1 A
-10 +10 %
|CSOP - CSON| = 5mV 0.5 A
-20 +20 %
ADP Current-Sense Amplifier, RADP = 20mΩ
CSIP/CSIN Input Voltage Range VCSIP/N 0 27 V
VOUT Current-Sense Amplifier, RBAT = 10mΩ
System Side Current PROCHOT# ISYS_HOT SystemSideProchot = 0x1000H 4096 mA
Threshold, Rs2 = 10mΩ (4096mA)
-5 +5 %
RVSEN
High-Level Input Voltage 0.9 V
Low-Level Input Voltage 0.35 V
Input Leakage Current VRVSEN = 3.3V, 5V 1 µA
PROCHOT#, RVSPG, FWRPG
Output Sinking Current Pin at 0.4V 37 mA
Leakage Current 1 µA
PROCHOT#
PROCHOT# Debounce Time (Note 7) PROCHOT# Debounce register -15 15 %
PROCHOT# Duration Time (Note 7) PROCHOT# Duration register -15 15 %
Protection
ADP Overvoltage Rising Hysteresis Forward mode 25.5 26.4 27 V
ADP Overvoltage Hysteresis 0.35 V
VOUTS Overvoltage Rising Threshold Forward mode VOUTS-12xREF 0.85 1.1 1.45 V
VOUTS Overvoltage Hysteresis 0.55 V
ADPS Overvoltage Rising Threshold Reverse mode ADPS-12xREF 0.9 1.2 1.5 V
ADPS Overvoltage Hysteresis 0.6 V
Operating conditions: ADP = CSIP = CSIN = 4V and 23V, VOUTS = VOUT = CSOP = CSON = 8V, unless otherwise noted. Boldface limits
apply across the junction temperature range, -10°C to +125°C unless otherwise specified. (Continued)
Min Max
Parameter Symbol Test Conditions (Note 6) Typ (Note 6) Unit
VOUTS Undervoltage Falling Threshold Forward mode VOUTS-12xREF -1.15 -0.85 -0.55 V
VOUTS Undervoltage Hysteresis 0.6 V
ADPS Undervoltage Falling Threshold Reverse mode ADPS-12xREF -1.55 -1.2 -0.85 V
ADPS Undervoltage Hysteresis 0.4 V
Over-Temperature Threshold (Note 7) 140 150 160 °C
Oscillator
Oscillator Frequency, Digital Core Only 0.85 1 1.15 MHz
Digital Debounce Time Accuracy PV Debounce and UV Debounce for -15 15 %
FWRPG and RVSPG delay
Miscellaneous
Switching Frequency Accuracy All programmed fSW settings, CCM, -15 15 %
and no period stretching
ADP Discharge Current ADP = 5V 6.5 mA
VOUT Discharge Current VOUT = 5V 8.5 mA
REF Pin Sink/Source Current Control1 <3> = 0 0.7 µA
REF Pin Fast Sink Current Control1 <3> = 1 0.7 µA
REF Pin Fast Source Current Control1 <3> = 1 14 µA
SMBus
SDA/SCL Input Low Voltage 3.3V 0.8 V
SDA/SCL Input High Voltage 3.3V 2 V
SDA/SCL Input Bias Current 3.3V 1 µA
SDA, Output Sink Current (Note 7) SDA = 0.4V 4 mA
SMBus Frequency fSMB 10 400 kHz
Gate Driver
UGATE1 Pull-Up Resistance UG1RPU 100mA source current 800 1200 mΩ
UGATE1 Source Current UG1SRC UGATE1 - PHASE1 = 2.5V 1.3 2 A
UGATE1 Pull-Down Resistance UG1RPD 100mA sink current 350 475 mΩ
UGATE1 Sink Current UG1SNK UGATE1 - PHASE1 = 2.5V 1.9 2.8 A
LGATE1 Pull-Up Resistance LG1RPU 100mA source current 800 1200 mΩ
LGATE1 Source Current LG1SRC LGATE1 - GND = 2.5V 1.3 2 A
LGATE1 Pull-Down Resistance LG1RPD 100mA sink current 300 450 mΩ
LGATE1 Sink Current LG1SNK LGATE1 - GND = 2.5V 2.3 3.5 A
LGATE2 Pull-Up Resistance LG2RPU 100mA source current 800 1200 mΩ
LGATE2 Source Current LG2SRC LGATE2 - GND = 2.5V 1.3 2 A
LGATE2 Pull-Down Resistance LG2RPD 100mA sink current 300 450 mΩ
LGATE2 Sink Current LG2SNK LGATE2 - GND = 2.5V 2.3 3.5 A
UGATE2 Pull-Up Resistance UG2RPU 100mA source current 800 1200 mΩ
UGATE2 Source Current UG2SRC UGATE2 - PHASE2 = 2.5V 1.3 2 A
UGATE2 Pull-Down Resistance UG2RPD 100mA sink current 300 450 mΩ
UGATE2 Sink Current UG2SNK UGATE2 - PHASE2 = 2.5V 2.3 3.5 A
UGATE1 to LGATE1 Dead Time tUG1LG1DEAD 10 20 40 ns
LGATE1 to UGATE1 Dead Time tLG1UG1DEAD 10 20 40 ns
LGATE2 to UGATE2 Dead Time tLG2UG2DEAD 10 20 40 ns
UGATE2 to LGATE2 Dead Time tUG2LG2DEAD 10 20 40 ns
PWM
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tRU
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LGATE 1V
tRL
tFL tUGFLGR
Figure 5. Forward Mode Soft-Start, 12VADP, 20VSYS Figure 6. Reverse Mode, Soft-Start, 12VADP, 5VSYS
Figure 7. VSYS Voltage Ramps Up in Forward Mode, Buck Figure 8. ADP Voltage Ramps Up in Reverse Mode, Buck
-> Buck-Boost -> Boost Operation Mode Transition -> Buck-Boost -> Boost Operation Mode Transition
Figure 9. Reverse Mode, 5VADP to 20VADP Figure 10. Reverse Mode, 20VADP to 5VADP
Figure 11. Forward Mode, 5VSYS to 20VSYS Figure 12. Forward Mode, 20VSYS to 5VSYS
Figure 13. Forward Mode, Output Voltage Loop to ADP Figure 14. Forward Mode, Output Voltage Loop to
Current Loop Transition. 5VADP, 12VSYS, System Load 0A Adapter Voltage Loop Transition. 6VADP, Input Voltage
to 0.65A Step, ADP Current Limit = 1.5A Limit = 5.12V, 12VSYS, System Load 0A to 0.78A Step,
System Current Limit = 5A, Input Current Limit = 5A
Figure 15. Forward Mode, Force Buck-Boost Mode to Figure 16. Reverse Mode, Force Buck-Boost Mode to
Boost Mode. 10VADP, 12VSYS Boost Mode. 12VADP, 10VSYS
Figure 17. Forward Mode, 5VADP, 12VSYS, 0A-2A Figure 18. Reverse Mode, 20VADP, 12VSYS, 0A-2A
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SDA
SCL
SDA
SCL
S P
Start Stop
Condition Condition
4.3 Acknowledge
Each address and data transmission uses nine clock pulses. The ninth pulse is the acknowledge bit (ACK). After
the start condition, the master sends seven slave address bits and an R/W bit during the next eight clock pulses.
During the nine clock pulse, the device that recognizes its own address holds the data line low to acknowledge
(see Figure 22). Both the master and slave use the ACK bit to acknowledge receipt of register addresses and
data.
MSB
SDA
SCL 1 2 8 9
Start Acknowledge
from Slave
Write to a Register
Slave Register LO Byte HI Byte
S A A A A P
ADDR + W ADDR Data Data
The data (SDA) and clock (SCL) pins have Schmitt-trigger inputs that can accommodate slow edges. Choose
pull-up resistors for SDA and SCL to achieve rise times according to the SMBus specifications.
The illustration in this datasheet is based on current sensing-resistors Rs1 = 20mΩand Rs2 = 10mΩ, unless
otherwise specified.
Table 3. SystemCurrentLimit Register 0x14H (11-Bit, 4mA Step, 10mΩ Sense Resistor, x36)
Bit Description
<1:0> Not used
<2> 0 = Add 0mA of system current limit.
1 = Add 4mA of system current limit.
<3> 0 = Add 0mA of system current limit.
1 = Add 8mA of system current limit.
<4> 0 = Add 0mA of system current limit.
1 = Add 16mA of system current limit.
<5> 0 = Add 0mA of system current limit.
1 = Add 32mA of system current limit.
<6> 0 = Add 0mA of system current limit.
1 = Add 64mA of system current limit.
<7> 0 = Add 0mA of system current limit.
1 = Add 128mA of system current limit.
<8> 0 = Add 0mA of system current limit.
1 = Add 256mA of system current limit.
<9> 0 = Add 0mA of system current limit.
1 = Add 512mA of system current limit.
<10> 0 = Add 0mA of system current limit.
1 = Add 1024mA of system current limit.
<11> 0 = Add 0mA of system current limit.
1 = Add 2048mA of system current limit.
<12> 0 = Add 0mA of system current limit.
1 = Add 4096mA of system current limit.
<13:15> Not used
Maximum <12:2> = 10111110000 6080mA
Note: The gain for the system side current-sensing amplifiers is different for Forward mode and Reverse mode. The gain in Reverse
mode is half of that in Forward mode. Therefore, in Reverse mode, the sensing current value needs to be doubled compared to the value
set in the SystemCurrentLimit register.
Table 4. ForwardOutputCurrentLimit Register 0x14H (11-Bit, 8mA Step, 5mΩ Sense Resistor, x36)
Bit Description
<1:0> Not used
<2> 0 = Add 0mA of system current limit.
1 = Add 8mA of system current limit.
<3> 0 = Add 0mA of system current limit.
1 = Add 16mA of system current limit.
<4> 0 = Add 0mA of system current limit.
1 = Add 32mA of system current limit.
<5> 0 = Add 0mA of system current limit.
1 = Add 64mA of system current limit.
<6> 0 = Add 0mA of system current limit.
1 = Add 128mA of system current limit.
<7> 0 = Add 0mA of system current limit.
1 = Add 256mA of system current limit.
<8> 0 = Add 0mA of system current limit.
1 = Add 512mA of system current limit.
<9> 0 = Add 0mA of system current limit.
1 = Add 1024mA of system current limit.
<10> 0 = Add 0mA of system current limit.
1 = Add 2048mA of system current limit.
<11> 0 = Add 0mA of system current limit.
1 = Add 4096mA of system current limit.
<12> 0 = Add 0mA of system current limit.
1 = Add 8192mA of system current limit.
<13:15> Not used
Maximum <12:2> = 10111110000 12160mA
Table 5. ForwardInputCurrent Register 0x3FH (11-Bit, 4mA Step, 20mΩ Sense Resistor, x18)
Bit Description
<1:0> Not used
<2> 0 = Add 0mA of input current limit in Forward mode.
1 = Add 4mA of input current limit in Forward mode.
<3> 0 = Add 0mA of input current limit in Forward mode.
1 = Add 8mA of input current limit in Forward mode.
<4> 0 = Add 0mA of input current limit in Forward mode.
1 = Add 16mA of input current limit in Forward mode.
<5> 0 = Add 0mA of input current limit in Forward mode.
1 = Add 32mA of input current limit in Forward mode.
<6> 0 = Add 0mA of input current limit in Forward mode.
1 = Add 64mA of input current limit in Forward mode.
<7> 0 = Add 0mA of input current limit in Forward mode.
1 = Add 128mA of input current limit in Forward mode.
Table 5. ForwardInputCurrent Register 0x3FH (11-Bit, 4mA Step, 20mΩ Sense Resistor, x18)
Bit Description
<8> 0 = Add 0mA of input current limit in Forward mode.
1 = Add 256mA of input current limit in Forward mode.
<9> 0 = Add 0mA of input current limit in Forward mode.
1 = Add 512mA of input current limit in Forward mode.
<10> 0 = Add 0mA of input current limit in Forward mode.
1 = Add 1024mA of input current limit in Forward mode.
<11> 0 = Add 0mA of input current limit in Forward mode.
1 = Add 2048mA of input current limit in Forward mode.
<12> 0 = Add 0mA of input current limit in Forward mode.
1 = Add 4096mA of input current limit in Forward mode.
<13:15> Not used
Maximum <12:2> = 10111110000 6080mA.
Table 6. ForwardInputCurrent Register 0x3FH (11-Bit, 8mA Step, 10mΩ Sense Resistor, x18)
Bit Description
<1:0> Not used
<2> 0 = Add 0mA of input current limit in Forward mode.
1 = Add 8mA of input current limit in Forward mode.
<3> 0 = Add 0mA of input current limit in Forward mode.
1 = Add 16mA of input current limit in Forward mode.
<4> 0 = Add 0mA of input current limit in Forward mode.
1 = Add 32mA of input current limit in Forward mode.
<5> 0 = Add 0mA of input current limit in Forward mode.
1 = Add 64mA of input current limit in Forward mode.
<6> 0 = Add 0mA of input current limit in Forward mode.
1 = Add 128mA of input current limit in Forward mode.
<7> 0 = Add 0mA of input current limit in Forward mode.
1 = Add 256mA of input current limit in Forward mode.
<8> 0 = Add 0mA of input current limit in Forward mode.
1 = Add 512mA of input current limit in Forward mode.
<9> 0 = Add 0mA of input current limit in Forward mode.
1 = Add 1024mA of input current limit in Forward mode.
<10> 0 = Add 0mA of input current limit in Forward mode.
1 = Add 2048mA of input current limit in Forward mode.
<11> 0 = Add 0mA of input current limit in Forward mode.
1 = Add 4096mA of input current limit in Forward mode.
<12> 0 = Add 0mA of input current limit in Forward mode.
1 = Add 8192mA of input current limit in Forward mode.
<13:15> Not used
Maximum <12:2> = 10111110000 12160mA
Table 8. ADPsideProchot# Register 0x47H (20mΩ Sensing Resistor, 128mA Step, x18 Gain)
Bit Description
<6:0> Not used
<7> 0 = Add 0mA of ADPsideProchot# threshold.
1 = Add 128mA of ADPsideProchot# threshold.
<8> 0 = Add 0mA of ADPsideProchot# threshold.
1 = Add 256mA of ADPsideProchot# threshold.
<9> 0 = Add 0mA of ADPsideProchot# threshold.
1 = Add 512mA of ADPsideProchot# threshold.
<10> 0 = Add 0mA of ADPsideProchot# threshold.
1 = Add 1024mA of ADPsideProchot# threshold.
<11> 0 = Add 0mA of ADPsideProchot# threshold.
1 = Add 2048mA of ADPsideProchot# threshold.
<12> 0 = Add 0mA of ADPsideProchot# threshold.
1 = Add 4096mA of ADPsideProchot# threshold.
<15:13> Not used
Maximum <12:7> = 110010, 6400mA
Table 9. SystemsideProchot# Register 0x48H (10mΩ Sensing Resistor, 256mA Step, x18 Gain)
Bit Description
<7:0> Not used
<8> 0 = Add 0mA of SystemsideProchot# threshold.
1 = Add 256mA of SystemsideProchot# threshold.
<9> 0 = Add 0mA of SystemsideProchot# threshold.
1 = Add 512mA of SystemsideProchot# threshold.
<10> 0 = Add 0mA of SystemsideProchot# threshold.
1 = Add 1024mA of SystemsideProchot# threshold.
<11> 0 = Add 0mA of SystemsideProchot# threshold.
1 = Add 2048mA of SystemsideProchot# threshold.
<12> 0 = Add 0mA of SystemsideProchot# threshold.
1 = Add 4096mA of SystemsideProchot# threshold.
<13> 0 = Add 0mA of SystemsideProchot# threshold.
1 = Add 8192mA of SystemsideProchot# threshold.
<15:14> Not used
Maximum <13:8> = 110010, 12800mA
6. Application Information
6.1 R3 Modulator
The ISL95338 uses the Renesas Robust Ripple Regulator (R3) modulation scheme. The R3 modulator combines
the best features of fixed frequency PWM and hysteretic PWM, while eliminating many of their shortcomings.
Figure 24 conceptually shows the R3 modulator circuit and Figure 25 shows the operation principles in steady
state.
COMP +
-
VCR S
Q PWM
R L PWM
VO
+
PHASE VW
VW - IL CO
+ Hysteretic
VCR Window
GM
-
CR
COMP
The fixed voltage window between VW and COMP is called the VW window in the following discussion. The
modulator charges the ripple capacitor CR with a current source equal to gm (VIN - VO) during PWM on-time and
discharges the ripple capacitor CR with a current source equal to gmVO during PWM off-time, where gm is a gain
factor. The Cr voltage VCR, therefore emulates the inductor current waveform. The modulator turns off the PWM
pulse when VCR reaches VW and turns on the PWM pulse when it reaches COMP.
Because the modulator works with Vcr, which is a large amplitude and noise-free synthesized signal, it achieves
lower phase jitter than a conventional hysteretic mode modulator.
Figure 26 shows the operation principles during dynamic response. The COMP voltage rises during dynamic
response and turns on PWM pulses earlier and more frequently temporarily. This behavior allows for higher
control loop bandwidth than a conventional fixed frequency PWM modulator at the same steady-state switching
frequency.
PWM
PHASE
VW
UG ATE
LG ATE
COMP
VCR
IL
The R3 modulator can operate in Diode Emulation (DE) mode to increase light-load efficiency. For example, in
Buck DE mode the low-side MOSFET conducts when the current is flowing from source-to-drain and does not
allow reverse current, emulating a diode. As shown in Figure 27, when LGATE is on, the low-side MOSFET
carries current, which creates negative voltage on the phase node due to the voltage drop across the
ON-resistance. The IC monitors the current by monitoring the phase node voltage. It turns off LGATE when the
phase node voltage reaches zero to prevent the inductor current from reversing the direction and creating
unnecessary power loss. Similar operations apply for other modes, such as Boost and Buck-boost mode.
If the load current is light enough, as Figure 27 shows, the inductor current reaches and stays at zero before the
next phase node pulse. At this stage, the regulator is in Discontinuous Conduction Mode (DCM). If the load
current is heavy enough, the inductor current never reaches 0A and the regulator is in CCM, although the
controller is in DE mode.
Figure 28 shows the operation principle in Diode Emulation mode at light load. The load gets incrementally lighter
in the three cases from top to bottom. The PWM on-time is determined by the VW window size, therefore, it is the
same, making the inductor current triangle the same in the three cases. The R3 modulator clamps the ripple
capacitor voltage VCR in DE mode to make it mimic the inductor current. The COMP voltage takes longer to reach
VCR, which naturally stretches the switching period. The inductor current triangles move farther apart from each
other, so that the inductor current average value is equal to the load current. The reduced switching frequency
helps increase light-load efficiency.
CCM/DCM Boundary
VW
V CR
IL
Light DCM
VW
V CR
IL
Deep DCM
VW
V CR
IL
• In Reverse Buck-Boost mode, Q4 and Q2 turn on at the same time, Q2 turns off and Q1 turns on, Q4 turns off
and Q3 turns on, and after Q3 and Q1 turn off at the same time and Q4 and Q2 turn on again.
• In Reverse Bypass mode, Q1 and Q4 are always on, except during the needed refresh time, while Q2 and Q3
are always off.
• In Reverse mode, the output sensing point is CSIP pin.
9$'3 56
9287
56
&6,3 &6,1 4 4 &623 &621 6<67(0
/2$'
/
4 4
The ISL95338 optimizes the operation mode transition algorithm by considering the input and output voltage ratio
and the load condition. The ISL95338 transitions from Boost mode to Buck-Boost mode when ADP voltage VADP
is rising and is higher than 94% of the system bus voltage VSYS, If VADP is higher than 120% of VSYS, the
ISL95338 transitions from Buck-Boost mode to Buck mode under any circumstance. At a heavier load, the mode
transition point changes accordingly to accommodate the duty cycle change due to the power loss on the voltage
regulator circuit.
When the ADP voltage VADP is falling and is lower than 106% of the system bus voltage VSYS, the ISL95338
transitions from Buck mode to Buck-Boost mode. If VADP is lower than 80% of VSYS, the ISL95338 transitions
from Buck-Boost mode to Boost mode.
VADP
B u ck B u ck
120%
B uck-B o ost
106%
B uck-B o ost
VSYS
94%
B o ost
80%
B o ost
VADP
When the reverse function is enabled with the SMBus command or RVSEN pin, and if reverse voltage VSYS is
higher than 4.1V, the ISL95338 operates in Reverse mode.
You can enable Bypass mode with Control1 register Bit 4. When the Bypass mode control bit is enabled, the REF
ramps to the input voltage, and the switcher continues switching until the output voltage is in the 300mV window
to the input. When the regulating voltage is within the 300mV window to the input voltage, the latch is set to stop
the switching, Q1 and Q4 are always on while Q2 and Q3 are always off, and UV and OV are disabled. To exit
Bypass mode, unprogram Control1 register Bit 4; the REF then ramps to DAC and switching resumes.
6.3 Soft-Start
The ISL95338 includes a low power LDO with nominal 5V output with an input that is OR-ed from the VOUT pin
and ADP pin. The ISL95338 also includes a high power LDO with nominal 5V output with an input that is from the
DCIN pin connected to the ADP and the system bus, through an external OR-ing diode circuit. Both LDO outputs
are tied to the VDD pin to provide the bias power and gate drive power for ISL95338. The VDDP pin is the
ISL95338 gate drive power supply input. Use an R-C filter to generate the VDDP pin voltage from the VDD pin
voltage.
When VDD > 2.7V, the ISL95338 digital block is activated. The soft-start time can be set by the external capacitor
on the REF pin. The ISL95338 sources 1µA current out of the REF pin to charge this external capacitor. Its
voltage is used as the output voltage reference in the soft-start procedure.
The switching frequency can be changed through SMBus Control1 register Bit<9:7> after POR. See the SMBus
Control1 register programming table (Table 11) for a detailed description.
After POR, the ISL95338 sources 10µA current out of the PROG pin and reads the PROG pin voltage to determine
the resistor value. If the ISL95338 is powered up from reverse side, it does not read PROG resistor. When
FRWEN is enabled, the ISL95338 resets the forward regulating voltage register to its default values according to
the PROG pin setting.
By default, the ADP current-sensing resistor Rs1 is 20mΩ and VSYS current-sensing resistor Rs2 is 10mΩ. Using
these Rs1 = 20mΩand Rs2 = 10mΩ options results in a 4mA/LSB correlation in the SMBus current commands.
If the Rs1 and Rs2 values are different from these Rs1 = 20mΩand Rs2 = 10mΩ options, the SMBus command
needs to be scaled accordingly to obtain the correct current. Smaller current-sense resistor values reduce the
power loss whereas larger current-sense resistor values give better accuracy.
The illustration in this datasheet is based on current-sensing resistors Rs1 = 20mΩ and Rs2 = 10mΩ unless
specified otherwise.
6.5 DE Operation
In DE mode, the ISL95338 uses a phase comparator to monitor the PHASE node voltage to the ground or VOUT
or ADP voltage during the low-side switching FET on-time to detect the inductor current zero crossing, depending
on the operation mode (Buck, Buck-Boost, or Boost) and power delivery direction (Forward or reverse direction).
See Table 22. The phase comparator needs a minimum on-time of the low-side switching FET for it to recognize
the inductor current zero crossing. If the low-side switching FET on-time is too short for the phase comparator to
successfully recognize the inductor zero crossing, the ISL95338 may lose diode emulation ability. To prevent this
scenario, the ISL95338 uses a minimum low-side switching FET on-time. When the intended low-side switching
FET on-time is shorter than the minimum value, the ISL95338 stretches the switching period to keep the low-side
switching FET on-time at the minimum value, which causes the CCM switching frequency to drop below the set
point.
(EQ. 1) I driver = Q g f SW
where:
Qg is the total gate ADP which can be found in the MOSFET datasheet
fSW is switching frequency
Renesas recommends connecting a 2.2μF ceramic capacitor from the VDD and VDDP pins to GND. The effective
capacitance of the MLCC at 5V must be at least 0.4μF after derating and at least 1.6 times the effective
capacitance at the BOOT pin. Use a X7R or X5R ceramic capacitor.
Adapter
Connector
Ri
2.2
Ci ACIN
2.2µF
RC Snubber ISL95338
V OUT
(EQ. 2) D = -------------
-
V IN
V OUT 1 – D
(EQ. 3) I P-P = -----------------------------------
-
f SW L
A typical step-down DC/DC converter has an IP-P of 20% to 40% of the maximum DC output load current for a
practical design. The value of IP-P is selected based upon several criteria such as MOSFET switching loss,
inductor core loss, and the resistive loss of the inductor winding.
The DC copper loss of the inductor can be estimated by Equation 4:
2
(EQ. 4) P COPPER = I LOAD DCR
I P-P
(EQ. 6) V C = --------------------------
-
8 C O f SW
If the output of the converter has to support a load with high pulsating current, several capacitors need to be
paralleled to reduce the total ESR until the required VP-P is achieved. The inductance of the capacitor can cause
a brief voltage dip if the load transient has an extremely high slew rate. Low inductance capacitors should be
considered in this scenario. A capacitor dissipates heat as a function of RMS current and frequency. Be sure that
IP-P is shared by a sufficient quantity of paralleled capacitors so that they operate below the maximum rated RMS
current at fSW. Take into account that the rated value of a capacitor can fade as much as 50% as the DC voltage
across it increases.
2
Dk
I MAX D 1 – D + --------------
(EQ. 7) 12
I C RMS ,NORMALIZED = ----------------------------------------------------------------------
IN I MAX
where:
IMAX is the maximum continuous ILOAD of the converter
k is a multiplier (0 to 1) corresponding to the inductor peak-to-peak ripple amplitude expressed as a ratio of IMAX
(0 to 1)
D is the duty cycle that is adjusted to take into account the efficiency of the converter, which is written as
Equation 8:
V OUT
(EQ. 8) D = -------------------------
V IN EFF
In addition to the capacitance, some low ESL ceramic capacitance is recommended to decouple between the
drain of the high-side MOSFET and the source of the low-side MOSFET.
0.60
Normalized Input RMS Ripple Current
0.48 k = 0.25
k = 0.5
0.36 k=0
k=1
k = 0.75
0.24
VS = ±2.5V
0.12
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Duty Cycle
body diode during turn off, the high-side MOSFET turns off with a VDS of approximately VIN - VOUT, plus the
spike across it. The preferred low-side MOSFET emphasizes low rDS(ON) when fully saturated to minimize
conduction loss. Note that this is an optimal configuration of MOSFET selection for low duty cycle applications
(D < 50%). For higher output, low input voltage solutions, a more balanced MOSFET selection for high-side and
low-side devices may be warranted.
For the low-side (LS) MOSFET, the power loss can be assumed to be conductive only and is written as
Equation 9:
2
(EQ. 9) P CON_LS I LOAD r DS ON _LS 1 – D
For the high-side (HS) MOSFET, the conduction loss is written as Equation 10:
2
(EQ. 10) P CON_HS = I LOAD r DS ON _HS D
For the high-side MOSFET, the switching loss is written as Equation 11:
where:
IVALLEY is the difference of the DC component of the inductor current minus 1/2 of the inductor ripple current
IPEAK is the sum of the DC component of the inductor current plus 1/2 of the inductor ripple current
tSW(ON) is the time required to drive the device into saturation
tSW(OFF) is the time required to drive the device into cut-off
Qg
(EQ. 12) C BOOT = ----------------------
V BOOT
where:
Qg is the total gate required to turn on the high-side MOSFET
VBOOT is the maximum allowed voltage decay across the boot capacitor each time the high-side MOSFET is
switched on
As an example, suppose the high-side MOSFET has a total gate ADP Qg of 25nC at VGS = 5V and a VBOOT of
200mV. The calculated bootstrap capacitance is 0.125µF; for a comfortable margin, select a capacitor that is
double the calculated capacitance. In this example, 0.22µF is enough.
Renesas recommends using a 0.47μF ceramic capacitor at the BOOT pin. The effective capacitance of the MLCC
at 5V must be at least 0.25μF after derating and at least 50 times the effective high-side MOSFET gate
capacitance. Use a X7R or X5R ceramic capacitor.
ISL95338
R3 R1
R4 1M 1.5M 1.5M 1M R2
ADPS and VOUTS are output voltage feedback pins, in Reverse mode and Forward mode, respectively, that
allow you to change output voltage by the resistor divider (R1, R2, and R3, R4), as shown in Figure 2. There are
two parallel resistors (1M and 1.5M) inside from VOUTS and ADPS to ground. For example, in Forward mode,
VSYS voltage magnitude can be revised by tuning R1 and R2 values, written by Equation 13. Thus, there is no
need to change the Forward Regulating Voltage register (0x15H) through the GUI. The same process can be
applied at the ADPS pin.
1.5M\\1M\\R 2
(EQ. 13) V OUTS = V SYS --------------------------------------------------------
1.5M\\1M\\R 2 + R 1
8. Layout
Pin Number Pin Name Layout Guidelines
BOTTOM PAD GND Connect this ground pad to the ground plane through a low impedance path. Renesas
recommends using at least five vias to connect to the ground planes in the PCB to ensure
sufficient thermal dissipation directly under the IC.
1 CSON Run two dedicated traces with sufficient width in parallel (close to each other to minimize the
loop area) from the two terminals of the battery current-sensing resistor to the IC. Place the
2 CSOP
differential mode and common-mode RC filter components in the general proximity of the
controller.
Route the current-sensing traces through vias to connect the center of the pads; or route the
traces into the pads from the inside of the current-sensing resistor. The following drawings show
the two preferred ways of routing current-sensing traces.
Vias
3 VOUTS Signal pin that provides feedback for the forward system bus voltage. Run a dedicated trace
from the system bus to the pin and do not route near the switching traces. Do not share the same
trace with the signal routing to the DCIN pin OR diodes.
4 BOOT2 Switching pin. Place the bootstrap capacitor in the general proximity of the controller. Use
sufficiently wide trace. Avoid any sensitive analog signal trace from crossing over or getting
close.
5 UGATE2 Run these two traces in parallel with sufficient width. Avoid any sensitive analog signal trace from
crossing over or getting close. Renesas recommends routing the PHASE2 trace to high-side
6 PHASE2
MOSFET source pin instead of general copper.
Place the IC close to the switching MOSFETs gate terminals and keep the gate drive signal
traces short for a clean MOSFET drive. The IC can be placed on the opposite side of the
switching MOSFETs.
Place the output capacitors as close as possible to the switching high-side MOSFET drain and
the low-side MOSFET source; and use the shortest PCB trace connection. Place these
capacitors on the same PCB layer as the MOSFETs instead of on different layers and using vias
to make the connection.
Place the inductor terminal to the switching high-side MOSFET drain and low-side MOSFET
source terminal as close as possible. Minimize this phase node area to lower the electrical and
magnetic field radiation, but make this phase node area large enough to carry the current. Place
the inductor and the switching MOSFETs on the same layer of the PCB.
7 LGATE2 Switching pin. Run the LGATE2 trace in parallel with the UGATE2 and PHASE2 traces on the
same PCB layer. Use sufficient width. Avoid any sensitive analog signal trace from crossing over
or getting close.
8 VDDP Place the decoupling capacitor in the general proximity of the controller. Run the trace
connecting to the VDD pin with sufficient width.
9 LGATE1 Switching pin. Run the LGATE1 trace in parallel with the UGATE1 and PHASE1 traces on the
same PCB layer. Use sufficient width. Avoid any sensitive analog signal trace from crossing over
or getting close.
10 PHASE1 Run these two traces in parallel with sufficient width. Avoid any sensitive analog signal trace from
crossing over or getting close. Renesas recommends routing the PHASE1 trace to the high-side
11 UGATE1
MOSFET source pin instead of general copper.
Place the IC close to the switching MOSFET’s gate terminals and keep the gate drive signal
traces short for a clean MOSFET drive. The IC can be placed on the opposite side of the
switching MOSFETs.
Place the input capacitors as close as possible to the switching high-side MOSFET drain and the
low-side MOSFET source; and use the shortest PCB trace connection. Place these capacitors
on the same PCB layer as the MOSFETs instead of on different layers and using vias to make
the connection.
Place the inductor terminal to the switching high-side MOSFET drain and low-side MOSFET
source terminal as close as possible. Minimize this phase node area to lower the electrical and
magnetic field radiation but make this phase node area large enough to carry the current. Place
the inductor and the switching MOSFETs on the same layer of the PCB.
12 BOOT1 Switching pin. Place the bootstrap capacitor in the general proximity of the controller. Use
sufficiently wide trace. Avoid any sensitive analog signal trace from crossing over or getting
close.
13 ADPS Run this trace with sufficient width parallel to the ADP pin trace.
14 CSIN Run two dedicated traces with sufficient width in parallel (close to each other to minimize the
loop area) from the two terminals of the adapter current-sensing resistor to the IC. Place the
15 CSIP
Differential mode and common-mode RC filter components in the general proximity of the
controller.
Route the current-sensing traces through vias to connect the center of the pads; or route the
traces into the pads from the inside of the current-sensing resistor. The following drawings show
the two preferred ways of routing current-sensing traces.
Vias
16 ADP Run this trace with sufficient width parallel to the ADPS pin trace.
17 DCIN Place the OR diodes and the RC filter in the general proximity of the controller. Run the VADP
trace and VSYS trace to the OR diodes with sufficient width.
18 VDD Place the RC filter connecting with the VDDP pin in the general proximity of the controller. Run
the trace connecting to the VDDP pin with sufficient width.
21 SDA Digital pins. No special consideration. Run the SDA and SCL traces in parallel.
22 SCL
27 PROG Signal pin. Place the PROG programming resistor in the general proximity of the controller.
28 COMPF Place the compensation components in the general proximity of the controller. Avoid any
switching signal from crossing over or getting close.
29 REF Place the reference capacitor in the general proximity of the controller.
30 COMPR Place the compensation components in the general proximity of the controller. Avoid any
switching signal from crossing over or getting close.
31 VOUT Run a dedicated trace from the system bus to the pin and do not route near the switching traces.
9. Revision History
Rev. Date Description
4.00 Jul.18.19 Fixed incorrect cross references to Figure 23 throughout document.
Updated block diagram (Figure 2 on page 5).
Updated pin descriptions for pins 8, 17, and 18 on pages 7 and 8.
Updated Figure 19 on page 17.
Updated ForwardInputCurrent register’s default value to 1.5A on page 20.
Changed “<12:4>” to “12:2>” in Tables 5 and 6 on page 23.
Added a paragraph to section 6.17 on page 40 and section 7.4 on page 44.
Added section 7.6 “Selecting the DCIN Filter” on page 45.
Added section 8 “Layout” on pages 46 through 48.
Applied new template.
3.00 Oct.26.18 Changed 24V to 20V in the description on page 1.
Updated the Ordering Information table on page 6 by adding tape and reel information to the table, updating
Note 1, removing Note 2, and updating the package drawing information.
Under “Absolute Maximum Ratings” on page 9 updated the following:
- Changed VOUT, VOUTS, CSOP, CSON maximum specification from +27V to +24V.
- Changed BOOT1, BOOT2 maximum specification from VDDP + 27V to VDDP + 25V.
- Changed BOOT1-PHASE1, BOOT2-PHASE2 maximum specification from +0.3V to +6.5V and moved it up
in the table.
- Updated CSIP-CSIN, CSOP-CSON by adding a minimum specification and changing the maximum
specification from 2mA to +0.3V.
- Added a new row (RVSEN, FRWEN, SDA, SCL, FRWPG, RVSPG, PROCHOT#).
Replaced POD L32.4x4A with the L32.4x4D.
Removed About Intersil section and updated the disclaimer.
2.00 Nov.30.17 Added Way Overcurrent Protection (WOCP) function to datasheet.
1.00 Oct.5.17 Removed Way Overcurrent Protection (WOCP) function
0.00 Aug.15.17 Initial release
10. Package Outline Drawing For the most recent package outline drawing, see L32.4x4D.
L32.4x4D
32 LEAD THIN QUAD FLAT NO-LEAD PLASTIC PACKAGE
Rev 2, 10/16
2.80
4.00 A 6
28X 0.40 PIN #1
6 B
INDEX AREA
PIN 1
INDEX AREA
4.00
2.70 ±0.10
(4X) 0.10
32X 0.30 32X 0.20
b 0.10 M C A B
TOP VIEW BOTTOM VIEW 4
(3.90 TYP)
(2.80) 0.75
SEE DETAIL “X”
// 0.10 C
C
BASE PLANE
SEATING PLANE
0.08 C
SIDE VIEW
( 2.70)
(28X 0.40)
C 5
(32X 0.20)
0.00 MIN
(32X 0.50) 0.05 MAX
0.2 REF
0.035 NOMINAL
TYPICAL RECOMMENDED LAND PATTERN
DETAIL “X”
NOTES:
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