Hafnium Oxide‐Based Ferroelectric Devices for

Computing‐in‐Memory Applications

INTRODUCTION:

In ferroelectric tunnel junctions, data can be written by sending a voltage to electrodes alongside an ultra-
thin ferroelectric, and it can be read by determining the tunnelling current. Theoretically, this kind of
memory ought to have an incredibly high density, quick reading-and-writing speeds, and a low degree of
power usage. It could become a non-volatile replacement for conventional DRAM (dynamic random-
access memory) technology. Ferroelectricity is a material property that can be used for binary
information storage and as such is promising for adoption in non-volatile memories.
Ferroelectric materials feature two non-zero spontaneous polarization states that can be
reversed by application of an external electrical field.

Hafnium oxide is a standard material available in CMOS processes. It

can be deposited with matured atomic layer deposition (ALD) techniques or physical vapor
deposition (PVD). we examine the prospect of HfO2 materials in emerging applications, such
as high-density memory and neuromorphic devices, and address the various challenges of
HfO2-based resistive random access memory

APPLICATION:

merging the memory and the logic function could help to drastically enhance the performance
of future electronic systems. With hafnium oxid

the memory devices can be distributed within the logic circuits opening up the path for new
ways of signal processing

references:
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(2016)

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