K E N D R I YA V I DYA L AYA
NARIMEDU MADURAI

P H Y S I C S I N V E S T I G A T O RY P R O J E C T

UNIJUNCTION TRANSISTOR

C RAM MUKILAN
 

PROJECT REPORT 

UNIJUNCTION TRANSISTOR
In partial fulllment of the requirements for AISSCE 2013
1! in

PHYSICS
Su"mitte# "$ 

C RAM MUKILAN
( )
of %lass &II A1

Under the guidance of 

MISS. I.SELVAMATHY (PGT - PHY)

CBSE AISSCE 2013-14

KENDRIYA VIDYALAYA
NARIMEDU MADURAI - 2!002

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  KENDRIYA VIDYALAYA
NARIMEDU MADURAI-625002

BONAFIDE CERTIFICATE
This is to %ertif$ that this pro'e%t entitle#

“STUDY ON CHARACTERISTICS OF UNIJUNCTION

TRANSISTOR”

Is a re%or# of "ona#e (or) %arrie# out C.RAM MUKILAN

of %lass &II A1 in partial fulllment of the requirements in
HYSICS as pres%ri"e# "$ C*SE for AISSCE + 20131! in
KENDRIYA VIDYALAYA! NARIMMEDU MADURAI 625
002.

 
DATE"
PRINCIPAL

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E#TERNAL E#AMINER
INTERNAL E#AMINER

DECLARATION

I here"# dec$are that the %ro&ect 'or( entit$ed

)STUDY ON CHARACTERISTICS OF
UNIJUNCTION TRANSISTOR”  *u"+itted for the
*u"&ect PHYSICS under the guidance of
MISS. I.SELVAMATHY (PGT - PHY)$  i* a record of 
origina$ 'or( done "# +e, I further dec$are that thi*
%ro&ect record or an# %art of thi* ha* not "een
*u"+itted e$*e'here for an# other c$a**,

C"#$$%

"#&'%

D#'%

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 ACKNOLEDE*EMENT 

.ir*t and fore+o*t/ I %rai*e and than( the A%&'*+/

fro+ the de%th of +# heart/ 'ho ha* "een a*
unfai$ing *ource of *trength/ co+fort and in*%iration
in the co+%$etion of thi* %ro&ect,

I 'i*h to e0%re** +# *incere than(* to

S,'.C.MUTHIAH / Princi%a$ 1endri#a Vid#a$a#a/
Nari+edu  3adurai for the *ucce**fu$ outco+e of thi*
%ro&ect 'or(,

I 'i*h to e0%re** our dee% and %rofound *en*e of 

gratitude to +# guide MISS. I. SELVAMATHY  for her
e0%ert and 4a$ua"$e guidance/ co++ent* and
*ugge*tion*,
 
5a*t/ "ut not the $ea*t/ I than( MY PARENTS$ 'ho
had "een a %art of +e in e4er# a*%ect of +# $ife,

 Ra+ 3u(i$an C

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TABLE O CONTENTS

INTRODUCTION

TRANSISTOR 

UNIJUNCTION TRANSISTOR 

CHARACTERISTICS OF UJT

OBJECTIVES

REQUIREMENTS

PROCEDURE

CIRCUIT DIAGRAM

OBSERVATION

RESULTS

GALLERY

BIBLIOGRAPHY
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INTRO8UCTION

The discove! o" e#ec$o%s &'s ' #'%d(') i% Ph!sics* &hich is $he e'so%
"o $he #'$e deve#o+(e%$ o" +h!sics, A%! device $h'$ &o)ed o% co%$o##ed "#o& o"
e#ec$o%s is c'##ed '% Electronic device, The -'%ch o" +h!sics $h'$ de'#s &i$h $he
e#ec$o%ic devices is c'##ed Electronics. 

Semiconductors  '%d $hei ./%c$io%s 'e so#id 0 s$'$e e#ec$o%ic devices $h'$
 +osses co%d/c$ivi$! '%d esis$ivi$! i%$e(edi'$e $o $h'$ o" co%d/c$os '%d i%s/#'$os i,e,*
123456 0 455 7( '%d 8 3 4506 9 455 (ho (04:,

The! "/$he he#+ed i% (i%i'$/i;'$io% o" e#ec$o%ic devices, These

se(ico%d/c$os 'e c#'ssi"ied o% -'sis o" $hei che(ic'# co(+osi$io%< $he! 'e Elemental
semiconductors 1Si* Ge:, Compound semiconductors 1CdS* G'As), Organic polymers
1Po#!'%i#i%e* Po#!+!o#e:,

The de#i-e'$e 'ddi$io% o" i(+/i$! $o i%ce'se $he co%d/c$'%ce 1i,e,* $o

i%ce'se ch'=e c'ies: o" ' +/e se(ico%d/c$o is c'##ed Doping. The i(+/i$! is c'##ed
Do+'%$s '%d $he o-$'i%ed se(ico%d/c$o is c'##ed Doped o Extrinsic Semiconductor.

I" ' $iv'#e%$ i(+/i$! is do+ed o% ' +/e $e$'v'#e%$ se(ico%d/c$o, The
o-$'i%ed se(ico%d/c$o is c'##ed P-type se(ico%d/c$os 1e 9 >s 'e $he ch'=e c'ies: .

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I" ' +e%$'v'#e%$ i(+/i$! is do+ed o% ' +/e $e$'v'#e%$ se(ico%d/c$o , The o-$'i%ed
se(ico%d/c$o is c'##ed N-type se(ico%d/c$os 1ho#es  'e $he ch'=e c'ies: .

Do+i%= o" -o$h $iv'#e%$ i% o%e 9h'#" '%d +e%$'v'#e%$ i(+/i$! i% o$he s'(e
c!s$'# "o(s ' P0N ./%c$io% diode* $his %o%0oh(ic device is /sed 's ec$i"ies 1$o co%ve$
AC $o DC:, ?e%e Diode '%d LED@s 'e e'(+#es o" P0N ./%c$io% Diodes,

 TRANSISTORS

A J/%c$io% T'%sis$o is three terminal so#id s$'$e device o-$'i%ed -!

=o&i%= ' $hi% sec$io% o" +0$!+e c!s$'# -e$&ee% $&o %0$!+e c!s$'#s o ' %0$!+e c!s$'#
 -e$&ee% $&o +0$!+e c!s$'#s,

The $'%sis$os &ee "is$ deve#o+ed -! .!ardeen '%d ".#.!rattain o"

!ell $elephone %a&oratories, USA. A $'%sis$os h've t'o (unctions* o%e is "o&'d
 -i'sed 1#o& esis$'%ce: '%d $he o$he is evese -i'sed 1hi=h esis$'%ce:,The i%+/$ is =ive%
i% #o& esis$'%ce '%d $he o/$+/$ $')e% i% hi=h esis$'%ce* $h/s i$ $ransers si=%'# -e$&ee%
resistors '%d so c'##ed T'%sis$os,

E C E
C

: :

PNP TRANSISTOR NPN TRANSISTOR

 

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S*+!O%S O $NS/S$OS

As disc/ssed '-ove ' $'%sis$o h's $hee $e(i%'# i,e,* +0%0+ o %0+0%, The! 'e

Emitter - This sec$io% s/++#ies ch'=e c'ies, I$ is "o&'d -i'sed &,,$ -'se

Collector - This sec$io% co##ec$s $he ch'=es, I$ is '#&'!s evese -i'sed &,,$ -'se

  !ase - This "o(s $he +0% ./%c, &i$h e(i$$e '%d co##ec$o, The B0E ./%c$io% is
"o&'d -i'sed &hi#e B0C ./%c$io% is evese -i'sed,

PP/C$/ONS O $NS/S$OS0

• A(+#i"ic'$io%

• E#ec$o%ic S&i$ch

• I%$e='$ed cic/i$s 1co(+/$es:

• Osci##'$os

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UNIJUNCTION TRANSISTOR

A U%i./%c$io% $'%sis$o is ' $hee $e(i%'# se(ico%d/c$o s&i$chi%= device, I$ h's '
/%i/e ch''c$eis$ic $h'$ &he% i$ is $i==eed* $he e(i$$e c/e%$ i%ce'ses /%$i# i$ is
#i(i$ed -! e(i$$e +o&e s/++#!,

CONS$1C$/ON0

I$ co%sis$s o" %0$!+e si#ico% -' &i$h '% e#ec$ic'# co%%ec$io% o% e'ch e%d, The
#e'ds $o $his co%%ec$io% 'e c'##ed -'se #e'ds* -'se o%e B4 '%d -'se $&o B,Be$&ee%
$he $&o -'ses* +0% ./%c$io% is "o(ed -e$&ee% ' +0$!+e e(i$$e '%d $he -', The #e'd
$o $his ./%c$io% is c'##ed $he e(i$$e #e'd E,

i$h o%#! one p-n (unction * $he device is %o('##! ' "o( o" diode, Bec'/se
$he t'o &ase terminals 'e $')e% "o( one section o the diode * $his device is '#so
c'##ed do/-#e -'sed diode, The e(i$$e is he'vi#! do+ed '%d $he % e=io% is #i=h$#!
do+ed, Fo $his e'so%* $he esis$'%ce -e$&ee% $he -'se $e(i%'#s is ve! hi=h &he%
$he e(i$$e #e'd is o+e%,

+erits O 1$0

i, Lo& Cos$ Device,

ii, Lo& +o&e '-so-i%= device  

iii, Lo%= %e='$ive esis$'%ce e=io%

iv, Re#i'-#e,

pplications O 1$0

i, Re#''$io% Osci##'$o
ii, Ovevo#$'=e de$ec$o,

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C#C$E/S$/CS O 1$0 

The ='+h sho&s $he c/ve -e$&ee% $he E(i$$e vo#$'=e 1V e: '%d E(i$$e
C/e%$ 1Ie: "o ' UJT '$ ' =ive% Vo#$'=e V BB -e$&ee% $he -'ses,This is c'##ed $he E(i$$e 
ch''c$eis$ics

i. I%i$i'##! &he% v E i%ce'ses "o( ;eo*Thee is ' #e')'=e c/e%$, This

c/e%$ is d/e $o (i%o$! c'ies i% $he evese -i'sed diode,This is
c'##ed c/$$ o"" e=io%,

ii. A"$e ce$'i% +oi%$ *$he "o&'d c/e%$ I E "#o&s &i$h i%ce'se i% V E 
$i## i$ '$$'i% ' +oi%$,This +oi%$ is c'##ed Pea2 voltage.

iii. A"$e $he +e') vo#$'=e* V E dece'ses &i$h i%ce'se i% I E ,This e=io% is
c'##ed Negative resistance region.This e=io% is (oe e#i'-#e,

iv. The %e='$ive e=io%s #'s$s /%$i# $he valley point e'ched*A"$e &hich
$he device is dive% $o S'$/'$io% e=io%,

UJT Ch''c$eis$ics c/ve

UJT CHARACTERISTICS

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O!EC$/3ES0
To s$/d! $he ch''c$eis$ics o" $he =ive% U%i./%c$io% $'%sis$o '%d
de$e(i%e Pe') Vo#$'=e,

E41/E+EN$S0
The =ive% UJT* Po&e s/++#!* Resis$o* Vo#$(e$e* (i##i'((e$e '%d e$c,*

POCED1E0
• M')e co%%ec$io%s 's +e $he =ive% cic/i$ di'='(,
•  Ad./s$ heos$'$ so $h'$ +o$e%$i'# 'coss $he -'ses B4 '%d B is V
1VB4B:,
•  Ad./s$ $he o$he heos$'$ '%d %o$e $he evese de"#ec$io% +oi%$ i% A,
•  S$'$ %o$i%= $he coes+o%di%= I E v'#/e "o VE,
•  Recod $he o-sev'$io% '%d +#o$ $he ch''c$eis$ic c/ve,

C/C1/$ D/5+0

O!SE3$/ON0

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VB1B2  2/
3E!6 7v) /E 7m)

ES1%$0
The ch''c$eis$ics o" UJT is s$/died '%d Pe') Vo#$'=e is "o/%d $o -e

GA55ERY

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BIBLIOGRAPHY 

• Pi%ci+#e o" E#ec$o%ics 0 V,, Meh$'

Rohi$ Meh$'

•  Ne& Si(+#i"ied Ph!sics 1Vo#,: 0 S,L, Ao'

• Co%ce+$s o" Ph!sics 1 Vo#,: 0 H,C,Ve('

• U%des$'%di%= Ph!sics 0 DC P'%de!

  1O+$ics '%d Mode% Ph!sics:

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