Plastic-Encapsulate Diodes

1.0 AMP. Surface Mount Rectifiers

M1---M7
FEATURES
For surface mounted application
Glass passivated junction chip.
0
Low forward voltage drop 52 32

High current capability

Easy pick and place 7 4.50

High surge current capability

Plastic material used carries Underwriters
Laboratory Classification 94V-0 260oC / 10 seconds at terminals
High reliability grade (AEC Q101 qualified)
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MECHANICAL DATA
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Case: Molded plastic

Terminals: Pure tin plated, lead free DO-214AC (SMA)
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solderable per J-STD-002B and JESD22-B102D.

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Polarity: Indicated by cathode band

Packaging: 12mm tapeper EIA STD RS-481
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Weight: 0.064 gram

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MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

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Ratings at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For
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capacitive load, derate current by 20%.

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Parameter Symbols M1 M2 M3 M4 M5 M6 M7 Unit

Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
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Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V

VDC 1000
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Maximum DC Blocking Voltage 50 100 200 400 600 800 V

Maximum Average Forward Rectified Current at
I(A) 1 A
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TL =100 OC

Peak Forward Surge Current 8.3ms Single Half

IFSM 30 A
Sine-wave Superimposed on Rated Load (JEDEC

method)
Maximum Instantaneous Forward Voltage at 1 A VF 1.1 V
Maximum DC Reverse Current TA = 25 OC 5
IR µA
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at Rated DC Blocking Voltage TA = 125 C 200
Typical Junction Capacitance 1) CJ 15 pF
Maximum Thermal Resistance 2) RθJL 30 O
C/W
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Operating and Storage Temperature Range TJ, TS - 50 to + 150 C
1) Measured at 1MHz and applied reverse voltage of 4 V
2) 8 mm2 (0.013 mm thick) land areas

MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/

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 Plastic-Encapsulate Diodes

M1---M7 Typical Characteristics

30
SINGLE PHASE

PEAK FORWARD SURGE CURRENT,

25
AVERAGE FORWARD CURRENT,

HALF WAVE 60Hz

RESISTIVE OR 8.3ms Single Half Sine Wave
2.0 20 (JEDEC Method)
INDUCTIVE LOAD
P.C.B MOUNTED
ON 0.315x0.315"(8.0x8.0mm) 15

AMPERES
AMPERES

COPPER PAD AREAS

1.0 10

25 50 75 100 125 150175 1 2 5 10 20 50 100

LEAD TEMPERATURE .o C NUMBER OF CYCLES AT 60 Hz
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Fig. 1-FORWARD CURRENT Fig. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD

DERATING CURVE SURGE CURRENT
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INSTANTANEOUS FORWARD CURRENT,

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INSTANTANEOUS REVERSE CURRENT,

100 100
50
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10 20
MICROAMPERES

10
Tj =125o C
MICROAMPERES

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1 5

Tj =75o C
2
0.1 1
.m

Tj =25o C 0.5
0.01 0.2
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0.1
0.001 0.05
0 20 40 60 80 100 120 140 0.02
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PERCENT OF PEAK REVERSE VOLTAGE, % 0.01

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
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INSTANTANEOUS FORWARD
VOLTAGE , VOLTS
Fig. 4-TYPICAL INSTANTANEOUS
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Fig. 3-TYPICAL REVERSE

FORWARD CHARACTERISTICS
CHARACTERISTICS
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1000
500 Units Mounted On
100
THERMAL IMPEDANCE (oC/W)

20in2 (5.4mm 2 )+0.5mil

CAPACITANCE. pF

200 inches(0.013mm) 50 Tj =25 oC

100 Thick Copper Land Areas f=1.0MHz
20
50 Vsig=50mVp-p
10
20
10 5
5 2
2 1
0 1.0 10 100 1000
1
0.01 0.1 1 10 100
REVERSE VOLTAGE VOLTS
REVERSE VOLTAGE VOLTS

Fig. 5-TRANSIENT THERMAL IMPEDANCE Fig. 6-TYPICAL JUNCTION CAPACITANCE

MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/

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