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Technological Plasmas Laboratory, State University of Sao Paulo – UNESP, Sorocaba City,
Sao Paulo State, Brazil
∗ Corresponding author: drsantanapl@gmail.com
Abstract. In this work, thin films of tin oxide doped with fluorine and of nominal surface resistance between 30 Ω
and 40 Ω were deposited by RF sputtering in a plasma deposition system and their surface electrical resistances
were evaluated for different conditions. To measure the resistivity of the fluorine-doped tin oxide film using an
aluminum PAD with the same thickness and the same width as the film, a Minipa digital multimeter acting as an
ammeter, a DC voltage source, and wires with banana-alligator connectors were used at six intervals (between the
aluminum measuring tips and the PADs). Thus, a linear approximation and verification of the resistance value for
each measured distance were undertaken. Resistances ranging from 44.10 Ω/ to 88.10 Ω/ for separations of 6 and
1 cm, respectively, were found. With the values obtained, the respective graphs were plotted for the six separations.
The four-point method was employed to obtain four measurements (M1 to M4), and the curves of voltage as a
function of the current were obtained. Values of resistance ranged from 11.4 Ω (M4) to 29.1 Ω (M3).
Keywords: RF sputtering, tin oxide thin films, surface electrical resistance.
124
Electrical Surface Resistance SnO2 :F Films 125
METHODS
Initially, glass substrates of 1.5 cm × 2.5 cm were ultrason-
icated three times for 20 min using pure water, industrial
detergent “Detlimp,” and isopropyl alcohol, respectively.
Then, the glass was positioned in the center of the upper
electrode in an RF sputtering deposition system. The exper-
imental setup consists of a stainless-steel vacuum chamber
(30 cm in height and 25 cm in diameter) with two horizon- Figure 2. (a) Scheme for measuring surface resistance using PADs.
tal circular internal electrodes of equal dimension (11 cm Rc indicates the resistance of the contacts (PAD, cables, and
in diameter), and the system was evacuated by a rotary multimeter), and surface resistance Rs = R W/L. (b) Four parallel
tips method: For a film of infinite width and length L with respect
pump (18 m3 /h) down to 0.1 Pa. A tin target of 5 cm
to distances Sn, it is possible to calculate the resistivity ρ. Courtesy
in diameter was fixed inside the reactor. Needle valves of Dr. Jose Roberto R. Bortoleto: Technological Plasmas Laboratory,
were employed to control the oxygen gas feed (of high State University of Sao Paulo, UNESP, Brazil.
purity: up to 99.9995%) at 50 sccm. Glass substrates were
exposed directly to the plasma environment established
by the application of radiofrequency power (13.56 MHz) RESULTS AND DISCUSSIONS
at 100 W for 30 min. Figure 1 shows the principle of the
RF sputtering system used for tin oxide thin film deposi- Table 1 presents the voltage and current values of the six
tion [1] with the permission of Scholar’s Press. distances of the tips for the test with the fluorine-doped tin
To measure the resistivity of the fluorine-doped tin oxide oxide film. From the data of Table 1, the respective graphs
film using an aluminum PAD with the same thickness and (V-I) were plotted for the six distances of the PADs as seen
width as the film, a Minipa digital multimeter was used in Figure 3.
as an ammeter together with a DC voltage source and Linear relationships were observed for all distances. As
wires with banana-alligator connectors. After the circuit of the distance increases, the slope of the lines increases,
Figure 2(a) was assembled, measurements were taken from which indicates that for higher values of distance, the
six different points on the film, using the distance between surface resistance tends to decrease. From Figure 3, a linear
the aluminum measuring tips and the PADs as a reference. approximation can be obtained and the resistance value for
Then, the respective graph (V-I) was plotted for the six each measured distance can be evaluated. Table 2 presents
distances of the PADs. Moreover, for the four parallel tips the parameters and surface resistance for each distance of
method, two digital multimeters were used, one as an the PADs.
ammeter and the other as a voltmeter simultaneously, a DC
voltage source, a perforated copper plate connected to the
wires, and the scheme of the measurements can be seen in Table 1. Fluorine-doped tin oxide film voltage and current data
Figure 2(b). obtained from measurements using PADs.
V (V) I1 – 6.1 cm I2 – 5 cm I3 – 4 cm I4 – 3 cm I5 – 2 cm I6 – 1 cm
0.5 4.7 4.7 5.7 6.5 8.2 12.2
0.8 7.4 8.8 10.5 11.7 15 18.9
1 9.8 11.3 13.3 16.4 20.2 24.7
1.3 12.4 15.7 18 20.4 26.4 33.6
1.5 14.3 17.6 20.4 23.9 31.1 39.1
1.7 17.1 20.2 23.3 27.9 35.4 44.7
2 19.7 23.9 28.1 33.5 42 52.9
2.3 23.1 27.6 31.9 37.5 47.3 60.9
2.5 25.3 30.7 34.9 41.1 51.7 69
2.8 28.1 34 39.1 46.6 58.7 76.6
3 29.6 36.1 41.1 49 62.9 83.1
3.4 34.2 40.7 46.4 56.5 71.2 94.6
3.7 36.6 44.8 50.3 62 78.8 104.1
4 38.9 49.1 54.5 66.3 84 111.5
4.5 45 55.6 63.7 74.2 96.1 126.7
5 50.8 61.4 71.1 84.7 105.1 139.4
Figure 1. Scheme of tin oxide thin film deposition method by 5.5 56.6 66.9 78.9 93.8 118.5 153.2
Magnetron Sputtering [1]. 6 59.6 73.1 86 101.9 130.8 165.7
126 C. S. de Souza et al.
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