UNIVERSITY OF PUNE

[4361]-102
F.E. (Semester II ) Examination - 2013
ENGINEERING PHYSICS
(2012 Pattern)
Time: 2 Hours] QUESTION PAPER MODEL SOLUTION [Max. Marks: 50
Q.1 (a) Explain the formation of Newton’s rings with diagram and derive the diameter of bright ring.
Formation of Newton’s Rings: 6
 Consider a monochromatic light incident on
plano-convex lens placed on plane glass plate
with convex side touching on plane surface of
Explanation: 1
glass.
Fig (Splitting of
1. Reflection from curved surface of lens: When
rays): 2
light is reflected from a curved surface of
Derivation : 3
plano-convex lens, it emerges as ray 1 without
any phase change.
2. Reflection from plane surface of glass: Transmitted light falls on a plane glass plate and reflects
and emerges as ray 2 with phase change of  .
3. Interference of reflected rays: The emerged rays 1 & 2 interfere & forms
circular fringes known as Newton’s rings.
Diameter of Bright Rings:
 Consider a Plano convex lens of radius of curvature R placed on plane glass
plate. Let t be the thickness of the air film at nth dark ring of radius rn.
According to condition for path difference of bright rings,
2µtcos (r+) = (2n1)
 For normal incidence, r = 0 & for large radius of curvature, angle of wedge
 will also very small. Hence neglecting r and , we get,
2µ t cos (0) = n  2 µ t = (2n1)

 2 t = (2n1) /2µ
……………………………………………...………………………..(1)
 According to geometry of ΔBCD, using Pythagoras law, BD2 = BC2 + CD2………………. (2)
But, BD = BO = R=Radius of curvature, CD = rn = radius of nth ring and OC = t = thickness of thin
film , then, BC = R – t and hence eq.(2) becomes
R2 = ( R - t )2 + rn2 = R2 - 2Rt + t2 + rn2
Since, thickness t is very small, t2 will be too small, hence neglected
 rn2 = 2 R t
Hence, 2t = rn2 / R ……….…………………………………………………………………………(3)
 From eqn. (1) & (3), (2n1) /2µ = rn2 / R
 rn2 = (2n1)R  / 2µ
 rn = √(2n1) Rλ /2µ = Radius of nth bright ring
 Hence, diameter of nth bright ring will be
Dn = 2rn = 2 √(2n1) Rλ /2µ
(b) Discuss the use of ultrasonics for flaw detection.
Flaw detection: Ultrasonic flaw detection is basically a comparative 3
technique used to detect defects like flaws, cracks, holes etc. by using
ultrasonic waves.
 Technique:
Explanation: 2
1) Transducer sends ultrasonic waves to propagate through Sample.
Fig: 1
2) The ultrasonic waves reflect from flaw or crack and then reach the
same transducer.
3) The time taken by sound waves to reach the transducer is recorded.
This recorded time is then compared with standard sample time. If
time recorded happens less than standard sample time, material is
considered as defective due to flaw.
4) This method also known as Non-Destructive Testing (NDT).

Q P Solution compiled by Prof. Nawale N.R., Asst. Prof., RMD Sinhgad SOE, Pune-58 Page | 1
 c) An auditorium of volume 5500 m3 is found to have reverberation time 2.5 sec. The sound absorbing
surface of the auditorium has an area of 750 m2. Calculate the average absorption coefficient of the 3
Formula:1 auditorium.
Substitution:1 Given: T = 2.5 sec, V = 5500 m3, S = 750 m2
Solution: 1 T=  2.5 = 0.165 × 5500/a × 750  a = 907.5 /2.5 × 750 = 0.484 OWU

OR
Q.2 a) Define Magnetostriction effect. Explain how magnetostriction oscillator is
used to produce ultrasonic waves with the help of neat circuit diagram. 6
Magnetostriction effect : The phenomenon of change in length when a
alternating magnetic field is applied on rod of ferromagnetic material parallel
to its length is known as magnetostriction effect.
Magnetostriction Oscillator: Construction:.
 Tank circuit: It consists of a capacitor C and Inductance coil L
connected parallel.
 Inductive coil L1: It is connected to the input of transistor and is
kept close to coil L of tank circuit.
 Ferromagnetic rod : The ferromagnetic rod which is clamped at the
center is passed through both coils L and L1.
Definition: 1  Transistor: The transistor is connected to feedback coil L1 through base and tank circuit through
Ckt Dia : 2 collector.
Explanation with
 DC power supply and switch: The power supply and switch are connected as input and ON-OFF
formula: 3
device respectively.
 Working:
1) Electric oscillations: When the switch S is closed, collector current starts increasing and charges
the capacitor C. When this capacitor is fully charged, it discharges through coil L , setting up
vibrations of frequency f = 1 / 2 √ LC
2) Feed back: Left as such oscillations would decay. In order to maintain sustained oscillations, the
changes of current in L1 are fed back to input circuit of transistor by mutual inductance between L
and L1.
3) Resonance: By adjusting capacitor C of LC circuit, the frequency of this LC circuit is made equals
to the natural frequency of the ferromagnetic rod, then, the resonance occurs and the
ferromagnetic rod vibrates with maximum amplitude and produces ultrasonic waves of
n Y
frequency. f =
2l 
where, n = 1,2 ,for overtones l=Length of rod, Y= Young’s Modulus, ρ =Density of crystal.
b) Explain with diagram how interference principle is used to design anti reflection coating.
 Interference used in Anti reflection coating : Following figure shows an 3
antireflection coating made by thin film or ARC of thickness /4 coated on
glass surface having refractive indices lying in relation µAir < µARC < µGlass .
Fig : 1
 On reflection, Ray 1 changes its phase since it reflects from denser medium
Explanation: 2
of ARC. Also, ray 2 changes its phase since it reflects from denser medium
Formula: 1
of glass.
 According of geometry of figure, path difference between reflected rays
PD = 2 µt.
 If the coating is a quarter wavelength (/4) thickness, then PD becomes
PD = = = µ × Half wavelength
 Hence, PD is multiple of half wavelength and if PD is multiple of half wavelength, then the there
will be destructive interference. Hence, there will be no reflected light and hence no loss of
light due to reflection. i.e., it suppresses the reflections from thin film.
 In this way interference principle is used to design anti reflection coating.
c) Monochromatic light from He-Ne laser source ( λ = 6328 A0 ) is incident normally on a diffraction grating
having 6000 lines/cm. Find the angle at which one would observe second order maximum. 3
Formula:1 Given: λ = 6328  10-10 cm, N = 6000 lines, a+b = 1/N cm = 1/6000 cm, n = 2,  = ?
Substitution:1 Formula: (a+b) sin  = n λ
Solution: 1 Calculation:  = sin-1(n λ / a+b) = sin-1(2 × 6328  10-10 × 6000) = sin-1 (0.759) Solution:  = 49.40

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 a) Define double refraction. Explain Huygen’s theory of double refracting crystal with diagram.
Double refraction: 6
 When unpolarised light is incident on calcite crystal, it splits in two
plane polarized lights, one obeys Snell’s law of refraction known as
Ordinary Ray and other does not obeys the Snell’s law known as Extra-
ordinary Ray, then the phenomenon is known as double refraction.
Huygens’s theory of double refraction:
Definition 1) A point source of monochromatic light in double refracting crystal gives rise two wave fronts O and E.
with figure: 2 2) Ordinary or O-ray travels with same velocity in all directions and hence corresponding wave front is
4 points of spherical.
Theory: 4 3) Extra-ordinary or E-ray travels with different velocity in all directions and
hence corresponding wave front are elliptical.
4) Velocity of O and E-rays are same along optic axis, hence the sphere and
ellipsoid touch each other on optic axis.
5) The crystals for which μe < μo are called negative crystals and for them,
ellipsoid is outside the sphere.
6) The crystals for which μe > μo are called positive crystals and for them,
ellipsoid is inside the sphere.
b) Define Fermi level . Plot the variation of fermi level with the increase of temperature for n-type and p-
type semiconductor. 3
Fermi level: It is the highest energy level that an electron can occupy in a material at absolute zero
temperature.
Variation of fermi level with the increase of temperature for n-type and p-type semiconductor:

Definition: 1
Plots: 2

c) Calculate the conductivity of a Ge sample if a donor impurity is added to an extent of one part in 10 8 Ge
atoms at room temperature.( Data Given: Na = 6.02 × 10 23 atoms / gm mole, At. Wt of Ge = 72.6, Density 3
of Ge = 5.32 gm/cc, µ = 3800 cm2/V sec)
Formula:  = nd e µd
Donar impurity:1 Here, concentration of donor atoms will be nd = × Density= × 5.32 = 4.41 × 1022
Concentration : 2
Hence for one donor atom, concentration will be nd = = 4.41 × 1014 per cm3.
Substituting, we get,  = nd e µd = 4.41 × 1014 ×1.6 × 10-19 × 3800 = 26812 ×10-5 = 0.268 mho/cm
OR
Q.4 a) Define Hall effect. Derive the expression of Hall Coefficient, Hall Voltage and discuss their applications.
Hall effect: When a piece of semiconductor ( n or p-type) carrying current is placed in a transverse magnetic 6
field, an electric field produces inside the semiconductor in a direction perpendicular to direction of current as
well as direction of applied magnetic field.
Derivation:
 Consider a rectangular plate of a semiconductor placed in transverse magnetic field and a
potential difference V is applied across its ends, and then current I flow through it as shown
below.
 Force due to Electric Field: FE = e EH
Definition: 1  Force due to Magnetic field : FL = Bev
Explanation  Equilibrium: At equilibrium, FE = FL ⥤ e EH = Bev
Hall voltage 3  E = Bv
Hall Coeff. : 1  Hall voltage: The current through intrinsic
Applications: 1 semiconductor is given by
I = n e v A  v = I / n e A,
 E = Bv = BI / n e A ……………………………………………………………………..…....(1)
Also, EH = VH / l ……….……………………………………………………………………...….(2)
Hence, equating (1) and (2), VH / l = BI / n e A

Q P Solution compiled by Prof. Nawale N.R., Asst. Prof., RMD Sinhgad SOE, Pune-58 Page | 3
 VH = = BJ l . …………………..( J = = Current density )
This equation is known as expression for Hall voltage.
 Also, using 1 / ne = RH = Hall coefficient
Applications of Hall Coefficient:
1) To determine type of semiconductor: If Hall coefficient is positive, semiconductor is p-type and if
Hall coefficient is negative, semiconductor is n-type.
2) To determine concentration of charge carriers:
3) To determine mobility of charge carriers
4) To determine conductivity of material
B) Explain the process of recording Hologram with the help of laser.
Recording of the Hologram: To produce hologram, the laser beam, beam-splitter, object & 3
photographic plate are adjusted as shown below.
1) Laser incidence: A laser beam is incident on beam splitter.
2) Beam splitting: A laser beam is divided by a beam splitter into
two beams. The transmitted beam illuminates the object whose
Figure: 1 hologram is to be recorded and a part of light scattered by the
Explanation: 2 object impinges on a photographic plate. The reflected beam,
also falls onto the photographic plate.
3) Interference: The superposition of these two beams produces an
interference pattern which is recorded on the plate. It consist alternate dark and bright bands.
The developed plate is known as the hologram.
c) At what angle of incidence should a beam of sodium light be directed upon the surface of diamond crystal
Formula:1
to produce complete polarized light ( Data Given: Critical angle for diamond = 24.5 0). 3
Given: Critical angle = c = 24.5 0 , hence Refractive index = μ = 1/ sin c = 1 / sin 24.5 = 2.41
Substitution:1
Formula: Brewster’s law, μ = tan ip
Solution: 1
 2.41 = tan ip  ip = tan -1 ( 2.41) = 67028’
Q.5 a) Derive Schrodinger’s time independent wave equation.
Schrödinger’s Time Independent wave equations: 6
 Step 1: For a particle of mass m moving with velocity v, the deBroglie wavelength is given by
= ……………………………………………………………….. (1)

 Step 2: The simple harmonic wave equation can be given by

= v2 .
For a wave function  (x, y, z, t), we can write
=

= …………………………………………………... (2)
Explanation: 6
Where = Laplacian operator

Solution of above equation (2) can be written as

(x,y,z,t) = (x, y, z) ….…………………………………………..….. (3)
 Step 3: Differentiating eqn (3) wrt “t”, we get
= (x, y, z)
Again Differentiating wrt “t”, we get
= (x, y, z)

= ……………………………………………………...………... (4)
 Step 4: Equating (2) and (4), we get
=  =  + =0

Using = 2, u = , hence, =  + =0

Using (1), we can write,

Q P Solution compiled by Prof. Nawale N.R., Asst. Prof., RMD Sinhgad SOE, Pune-58 Page | 4
 + = 0…………………………………………..……….….. (5)
But, according to total energy equation,
E = KE + PE = m +V= +V = +V


Using this value in eqn (5), we can write
+ = 0 , But,

 + =0

This equation is known as Schrödinger’s Time Independent wave equation.

b) Define phase velocity, group velocity and derive their expressions.
Phase velocity: 4
 The velocity with which De-Broglie wave travels is called phase velocity.
Group Velocity:
 The velocity of wave group is known as group velocity.
Derivation of velocity expressions:
Definition1: 1
1) Consider the two De Broglie waves of slightly different frequencies travelling along +x direction
Definition2: 1
Expressions: 2
represented by the following relations
y1 = a sin (1t - k1x) and y2 = a sin (2t – k2x)
where a is the amplitude,  is the angular frequency , k is the propagation constant and (t - kx)
is the phase of the wave motion.
2) The superposition of above waves gives
y = y1+ y2 = a sin (1t - k1x) + a sin (2t – k2x) = a [sin (1t - k1x) + sin (2t – k2x)]
= 2 a sin [(1 + ω2) t/2 – (k1 + k2)x/2] cos [(1 – ω2) t/2 – (k1 – k2)x/2]
Now, using (1 + ω2)/2 =  and (k1 + k2) /2 = k, we can write
(1 – ω2) = d and (k1 – k2) = dk,
the resultant can be written as y = 2 A sin (ωt-kx) cos [(dωt/2 )–(dkx/2)].
3) The first part consisting sine term represents a wave of angular frequency ω and propogation
constant k. This yields expression of phase velocity vp = . The second part consisting a
modulating term consisting cosine term which represents a wave of angular frequency dω and
propagation constant dk. This yields expression of group velocity vg = .
c) Calculate the wavelength associated with 1 MeV proton.( mp = 1.67  10 -27
kg)
Given: mp = Mass of proton = 1.67  10-27 kg, 3
Formula:1
E = 1 MeV = 1×106 eV = 1.6 × 10-19 J, = ?
Substitution:1
Formula:  = h / √ 2mp E
Solution: 1
Solution:  = 2.868  10-14 m
OR
Q.6 a) Explain Heisenberg’s uncertainty principle and prove this principle using single slit diffraction
experiment. 6
Heisenberg’s Uncertainty Principle:
Statement: It is impossible to determine precisely and simultaneously the position and momentum of a moving
particle.
Explanation:
 Position and momentum according to Newton’s laws : According to Newton’s laws, the position
of a moving particle is given by x = vt and the momentum of a same particle is given by x = pt /
m. Hence, p = mx/t. Here, position and momentum are precisely and simultaneously measured.
Explanation: 2
 Position and momentum according to De-Broglie hypothesis: According
Proof: 4 
to De-Broglie hypothesis, the particle is associated with wave and particle
Diagram:1
is located in wave packet. If wave packet has linear spread x, then
Proof Of HUP : 3
position of particle will be anywhere in that wave packet. i.e., there is
uncertainty x in position of particle.
 As the wave packet is a group of waves of slightly different wavelengths. Hence, spread in
wavelength or uncertainty in wavelength  is related to uncertainty in position i.e., x. But,
according to De-Broglie wavelength formula we can write,

Q P Solution compiled by Prof. Nawale N.R., Asst. Prof., RMD Sinhgad SOE, Pune-58 Page | 5
 λ=  λ =

i.e., the uncertainty in wavelength  in turn depends on

uncertainty in momentum p. Hence uncertainty in position x
and uncertainty in momentum p are interrelated.
 Here, position and momentum cannot be precisely and
simultaneously measured. Narrower the wave group, smaller is
the uncertainty in its position. Wider the wave group, larger is the uncertainty in its position.
 The mathematical interrelation between uncertainty in position x x and uncertainty in
momentum p is known as Heisenberg’s Uncertainty Principle.
 Mathematically, Heisenberg’s Uncertainty Principle is given by
x p  h
i.e., the product of uncertainties x and p is always greater than or equal to the Planck’s constant
h.
Electron diffraction through single slit:
Consider a parallel beam of electrons is incident on a slit of
width y and diffract as shown on the screen as shown below.
1) Position uncertainty: Let the first order minimum be produced
at diffraction angle . According to theory of diffraction, we
can write for first minimum
y sin  =  ( d sin  = n )
Hence, uncertainty in the measurement of position of electron
is the width of the slit y.
y = …………………………………………………………………..…... (1)
2) Momentum uncertainty: Let the momentum of electrons is p which is along X-direction before
the electrons pass through the slit before diffraction. After diffraction, electron deviates from the
initial path and acquires a Y-component of momentum that lies anywhere between AB. The Y-
component of momentum, therefore, lie between + psin  and - psin . Hence the uncertainty in
momentum along Y-direction is
py = + psin  - (-psin  ) = psin  + psin = 2 psin  , But, p =

Hence, py = psin  …………………………………………………………..……..(2)

This is uncertainty in momentum.
3) Product of uncertainties: From equations (1) and (2), we can write
y py = psin  = 2h  y py  h
Thus the product of uncertainties in position and momentum is of the order of Planck’s constant.
b) Calculate energy and momentum of an electron confined in a rigid box of width 2 A 0 for lowest
energy state. 4
Energy : 2
Formula: En = For lowest energy level, n = 1, E1 = = 9.4 eV
Momentum:2
The corresponding momentum is p1 = = = 1.66 × 10-24 kg m/s
c) Does the matter waves are electromagnetic waves ? Explain.
No, matter waves are not EM since the does not consist any charge term. 3
Explanation:
Say ”No”: 1  Velocity of matter waves depends on speed of particle.
Explanation: 2  Electromagnetic waves travel with higher speed than matter waves, EM waves do not need any
medium to travel but matter waves do.
 EM waves are emitted by matter (EM waves are radiated in empty space) while matter waves are
associated with matter .
 EM waves have higher wavelength than matter waves.
Q.7 a) Explain the synthesis of nanoparticles through colloidal route with diagram.
Synthesis of Nanoparticles by Colloidal Route:
 Nanosized particles can be synthesized by chemical reaction.
 Apparatus: It consists Tri-necked glass flask (one neck for thermometer, second for reactant and
6
the third for inert gas like argon) , Chloroauric Acid and Trisodium Gold as reactants kept in glass

Q P Solution compiled by Prof. Nawale N.R., Asst. Prof., RMD Sinhgad SOE, Pune-58 Page | 6
 flask, Magnetic stirrer which rotate Teflon coated magnetic
needle in glass flask by induction and Electric heater
 Working:
1) The chemical reaction is given by:
HAuCl4 + Na3C6H5O7 Au+ + C6H5O7- + HCl + NaCl
Chloroauric Acid + Trisodium Gold  Nanoparticles +
Other Products
2) Growth of Nanoparticles (LaMer diagram): The same sized
Nanoparticles can be grown by controlling solute
Set-up Dia: 1 concentration with time. This behavior of growth is known as
Lamer Dia: 1 LaMer diagram as shown below.
Explanation: 4 1) When the concentration increases rapidly, rising above the
saturation concentration for a brief period, then a short burst of nucleation occurs with the
formation of a large number of nuclei in a short span of time.
2) Lowering the concentration below the nucleation level whilst allowing the particles to grow
further at a rate determined by the slowest step in the
growth process, thus separating the nucleation and growth
in time.

b) Differentiate between Type-I and type-II superconductor with diagram.

Difference between Type I & Type II superconductors: 4
Type I Type II
It is characterized by single critical field Hc. It is characterized by two critical fields Hc1 &
Hc2.

4Points: 4

Transition from Sc to normal state occurs Transition from Sc to normal state occurs
2
sharply at Hc. gradually at Hc1 to Hc2.
They are poor conductor of current, hence its They carry very large currents; hence its use is
3
use is limited. wide.
They are also known as “soft They are also known as “hard
4
superconductors.” superconductors.”
5 Exa.:Mercury, Aluminium, etc. Exa.:Niobium, NbN, etc.
c) Explain two applications of superconductivity.
Applications of Superconductors: 3
 Since in superconductors, resistance R is zero, hence there will be no I 2R losses. Hence, no power
loss & no energy dissipation. Due to this property, they are used in many fields.
App1:1½
1) Superconducting Transmission wires: Since, R = 0, there will be no I2R losses. Hence, no power
App 2:1½
loss & no energy dissipation. Following figure shows a structure of superconducting cable.
2) Electrical Generators: If superconductors are used there will be half size of conventional
generators. They are above 99% efficient. This fact makes them very lucrative ventures for power
utilities.
OR
Q.8 a) Explain Meissner effect and critical magnetic field for superconductivity.
Meissner effect : 6
It states that if a superconductor is cooled in a magnetic field below the transition
Explanation1
temperature, the magnetic flux lines are pushed out of the body of the superconductor.
With - : 4
Explanation2
 Following fig. (1) Shows the penetration of magnetic flux lines through metal
With Hc formula: 2
sphere above critical temperature and Fig. (2) Shows the expulsion of
magnetic flux lines through metal sphere below critical temperature. This

Q P Solution compiled by Prof. Nawale N.R., Asst. Prof., RMD Sinhgad SOE, Pune-58 Page | 7
 expulsion of magnetic field is known as Meissner effect.
 If, H is externally applied magnetic field, B is magnetic induction inside the specimen, M is
magnetization produced within the sample. Then, at normal state ,
B = 0 (H + M). But at T < Tc, B = 0
Hence, 0 (H + M) = 0  H = - M  M / H = -1
But, M / H = Susceptibility =     = -1
But susceptibility is negative for diamagnets; hence superconducting state is termed as Perfect
diamagnetic.
Critical magnetic field (Hc) :
 The minimum Magnetic field at which superconductivity is destroyed & normal
resistivity is regained is called critical field Hc.
 The relation between magnetic field & transition temperature is given by
=

 Exa : Aluminium : 99 Gauss, Cadminium : 30 Gauss, etc.

b) Explain optical and electrical properties of nanoparticles.
Optical property : 4
 When nanoparticles are formed, the color of nanoparticle changes.
 When nanoparticles of gold are formed, they give different colors instead
of yellow as it appears in bulk form.
 According to German scientist Gustav Mie, when particles become
smaller in size, due to small sizes, scattering wavelength changes. This
Opt.Property:2 scattering wavelength depends on radius of particles. Hence particles can
Ele.Property: 2 be made to emit or absorb specific wavelengths (colours) of light merely
by controlling their size.
 Mie’s Formula: When a beam of light of intensity Io & wavelength λ passes through a medium, then, the
transmitted intensity is given by
I = I0 e -  x
μ = extinction coefficient depends upon no of particles in medium, = (N/V) CExt where N is
number & V is volume of particles, CExt = extinction coefficient and x = Thickness of material
Electrical properties
 This property is related with conductivity or current-
voltage behavior.
 When nanoparticles are formed, the electrical behavior of
nanoparticles changes.
1) The staircase characteristics of nanoparticles are shown in
following graph. The zero current region is known as
Coulomb Blockade. Following figure shows the linear
characteristics of bulk material and staircase
characteristics of nano material.
c) Explain the applications of nanoparticles in medical and electronic industry.
A) Applications of nanoparticles in Medical: 3
1) Drug delivery: Nanoparticles are used to deliver drugs or medicine to needed spot. This highly
selective approach reduces costs and human suffering. Gold nanoshells are used for detection &
Application1:1½ treatment of cancerous tissue. The nanoshells (Gold shell & silica core) are transported in tomour
Application2:1½ of cancer from leaky vessel. The IR laser (55 0C) beam fries tumor cells.
2) Artificial Heart valves (Stents): Nanocrystalline silicon carbide is a candidate material for
artificial heart valves primarily because of its low weight, high strength and inertness.
B) Applications of nanoparticles in Electronics:
1) Conducting wires: Carbon nanotubes are used as conduits for electricity in very small electrical
circuits . If area required to record one piece of information can be shrunk in the nanoscale, the
storage capacity of the disc can be improved dramatically.
2) Memory Storage: Carbon nanotube based crossbar memory called Nano-RAM has been
developed as a material as a future replacement of Flash memory.

***
Q P Solution compiled by Prof. Nawale N.R., Asst. Prof., RMD Sinhgad SOE, Pune-58 Page | 8