J/SST111 Series

Vishay Siliconix

N-Channel JFETs
J111 SST111
J112 SST112
J113 SST113
PRODUCT SUMMARY
Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)

J/SST111 –3 to –10 30 5 4

J/SST112 –1 to –5 50 5 4
J/SST113 v–3 100 5 4

FEATURES BENEFITS APPLICATIONS

D Low On-Resistance: 111 < 30 W D Low Error Voltage D Analog Switches
D Fast Switching—tON: 4 ns D High-Speed Analog Circuit Performance D Choppers
D Low Leakage: 5 pA D Negligible “Off-Error,” Excellent Accuracy D Sample-and-Hold
D Low Capacitance: 3 pF D Good Frequency Response, Low Glitches D Normally “On” Switches
D Low Insertion Loss D Eliminates Additional Buffering D Current Limiters

DESCRIPTION
The J/SST111 series consists of all-purpose analog switches For similar products in TO-206AA(TO-18) packaging, see the
designed to support a wide range of applications. The 2N/PN/SST4391 series, 2N4856A/4857A/4858A, and
J/SST113 are useful in a high-gain amplifier mode. 2N5564/5565/5566 (duals) data sheets.

The J series, TO-226AA (TO-92) plastic package, provides

low cost, while the SST series, TO236 (SOT-23) package,
provides surface-mount capability. Both the J and SST series
are available in tape-and-reel for automated assembly (see
Packaging Information).

TO-226AA (TO-92) TO-236 (SOT-23)

D 1
D 1

3 G
S 2
S 2

G
3
Top View

SST111 (C1)*
Top View
SST112 (C2)*
SST113 (C3)*
J111
J112
*Marking Code for TO-236
J113

ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –35 V Power Dissipationa
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA (TO-236) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
(TO-226AA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360 mW
Lead Temperature (1/16” from case for 10 seconds) . . . . . . . . . . . . . . 300 _C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Notes
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C a. Derate 2.8 mW/_C above 25_C

For applications information see AN105.

Document Number: 70232 www.vishay.com

S-04028—Rev. E, 04-Jun-01 7-1
J/SST111 Series
Vishay Siliconix

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits
J/SST111 J/SST112 J/SST113

Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit

Static
Gate-Source
V(BR)GSS IG = –1 mA , VDS = 0 V –55 –35 –35 –35
Breakdown Voltage
V
Gate-Source Cutoff Voltage VGS(off) VDS = 5 V, ID = 1 mA –3 –10 –1 –5 –3

Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V 20 5 2 mA

VGS = –15 V, VDS = 0 V –0.005 –1 –1 –1

Gate Reverse Current IGSS nA
TA = 125_C –3

Gate Operating Current IG VDG = 15 V, ID = 10 mA –5 pA

VDS = 5 V, VGS = –10 V 0.005 1 1 1

Drain Cutoff Current ID(off) nA
TA = 125_C 3

Drain-Source On-Resistance rDS(on) VGS = 0 V, VDS = 0.1 V 30 50 100 W

Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 V

Dynamic
Common-Source Forward
gfs 6 mS
Transconductance
VDS = 20 V, ID = 1 mA
Common-Source f = 1 kHz
gos 25 mS
Output Conductance

VGS = 0 V, ID = 0 mA
Drain-Source On-Resistance rds(on) 30 50 100 W
f = 1 kHz

Common-Source
Ciss 7 12 12 12
Input Capacitance
VDS = 0 V, VGS = -10 V
pF
Common-Source Reverse Transfer f = 1 MHz
Crss 3 5 5 5
Capacitance

Equivalent Input VDG = 10 V, ID = 1 mA nV⁄

en 3
Noise Voltage f = 1 kHz √Hz

Switching
td(on) 2
Turn-On Time
tr VDD = 10 V, VGS(H) = 0 V 2
ns
td(off) See Switching Circuit 6
Turn-Off Time
tf 15

Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NCB
b. Pulse test: PW v300 ms duty cycle v3%.

www.vishay.com Document Number: 70232

7-2 S-04028—Rev. E, 04-Jun-01
 J/SST111 Series
Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

On-Resistance and Drain Current

vs. Gate-Source Cutoff Voltage On-Resistance vs. Drain Current
100 200 100
rDS @ ID = 1 mA, VGS = 0
rDS(on) – Drain-Source On-Resistance ( Ω )

rDS(on) – Drain-Source On-Resistance ( Ω )

TA = 25° C

IDSS – Saturation Drain Current (mA)

IDSS @ VDS = 20 V, VGS = 0
80 160 80

rDS IDSS VGS(off) = –2 V

60 120 60

40 80 40
–4 V

–8 V
20 40 20

0 0 0
0 –2 –4 –6 –8 –10 1 10 100
VGS(off) – Gate-Source Cutoff Voltage (V) ID – Drain Current (mA)

On-Resistance vs. Temperature Turn-On Switching

200 5
ID = 1 mA tr approximately independent of ID
rDS changes X 0.7%/_C VDD = 5 V, RG = 50 Ω
rDS(on) – Drain-Source On-Resistance ( Ω )

VGS(L) = –10 V
160 4

tr
Switching Time (ns)

120 VGS(off) = –2 V 3
td(on) @
ID = 12 mA
80 2
–4 V

40 –8 V 1 td(on) @
ID = 3 mA

0 0
–55 –35 –15 5 25 45 65 85 105 125 0 –2 –4 –6 –8 –10
TA – Temperature ( _C) VGS(off) – Gate-Source Cutoff Voltage (V)

Turn-Off Switching Capacitance vs. Gate-Source Voltage

30 30
td(off) independent of device VGS(off) f = 1 MHz
VDD = 5 V, VGS(L) = –10 V
24 24
Capacitance (pF)
Switching Time (ns)

18 tf @ 18
VGS(off) = –2 V

12 12
td(off)
Ciss @ VDS = 0 V
6 6
tf @ Crss @ VDS = 0 V
VGS(off) = –8 V

0 0
0 2 4 6 8 10 0 –4 –8 –12 –16 –20
ID – Drain Current (mA) VGS – Gate-Source Voltage (V)

Document Number: 70232 www.vishay.com

S-04028—Rev. E, 04-Jun-01 7-3
J/SST111 Series
Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Forward Transconductance and Output Conductance
Noise Voltage vs. Frequency vs. Gate-Source Cutoff Voltage
100 50 500
gfs and gos @ VDS = 20 V
VDS = 10 V VGS = 0 V, f = 1 kHz

gfs – Forward Transconductance (mS)

Hz

g os – Output Conductance (mS)

40
en – Noise Voltage nV /

gfs
gos
30

10 250
ID = 1 mA
20

ID = 10 mA
10

1 0 0
10 100 1k 10 k 100 k 0 –2 –4 –6 –8 –10

f – Frequency (Hz) VGS(off) – Gate-Source Cutoff Voltage (V)

Gate Leakage Current Common-Gate Input Admittance

10 nA 100
IGSS @ 125_C VDG = 10 V
ID = 10 mA
TA = 125_C ID = 10 mA TA = 25_C gig
1 nA

1 mA 10
– Gate Leakage

100 pA big
1 mA
(mS)

10 pA 10 mA IGSS @ 25_C
TA = 25_C 1
G
I

1 pA

0.1 pA 0.1
0 6 12 18 24 30 100 200 500 1000

VDG – Drain-Gate Voltage (V) f – Frequency (MHz)

Common-Gate Forward Admittance Common-Gate Reverse Admittance

100 10
VDG = 10 V VDG = 10 V
ID = 10 mA ID = 10 mA
TA = 25_C TA = 25_C

–gfg bfg
–brg
10 1.0

gfg
(mS)

(mS)

+grg
–grg
1 0.1

0.1 0.01
100 200 500 1000 100 200 500 1000

f – Frequency (MHz) f – Frequency (MHz)

www.vishay.com Document Number: 70232

7-4 S-04028—Rev. E, 04-Jun-01
 J/SST111 Series
Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Common-Gate Output Admittance Output Characteristics

100 100
VDG = 10 V
VGS(off) = –4 V
ID = 10 mA
TA = 25_C
80
bog

ID – Drain Current (mA)

10
60 VGS = 0 V
(mS)

–0.5
gog
40 –1.0
1
–1.5
20 –2.0

–2.5
0.1 0
100 200 500 1000 0 2 4 6 8 10
f – Frequency (MHz) VDS – Drain-Source Voltage (V)

Output Characteristics Transfer Characteristics

40 100
VGS(off) = –4 V VGS(off) = –4 V VDS = 20 V

32 80
TA = –55_C
ID – Drain Current (mA)

ID – Drain Current (mA)

VGS = 0 V

24 –0.5 60
25_C
–1.0
16 40
–1.5

–2.0
8 20
–2.5
125_C
–3.0
0 0
0 0.2 0.4 0.6 0.8 1.0 0 –1 –2 –3 –4 –5
VDS – Drain-Source Voltage (V) VGS – Gate-Source Voltage (V)

VDD
SWITCHING TIME TEST CIRCUIT
J/SST111 J/SST112 J/SST113 RL
VGS(L) –12 V –7 V –5 V
OUT
RL* 800 W 1600 W 3200 W
VGS(H)
ID(on) 12 mA 6 mA 3 mA

*Non-inductive VGS(L)
INPUT PULSE SAMPLING SCOPE 1 kW 51 W
VGS
Rise Time < 1 ns Rise Time 0.4 ns
Scope
Fall Time < 1 ns Input Resistance 10 MW
Pulse Width 100 ns Input Capacitance 1.5 pF 51 W
PRF 1 MHz

Document Number: 70232 www.vishay.com

S-04028—Rev. E, 04-Jun-01 7-5
 Legal Disclaimer Notice
Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
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The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Document Number: 91000 www.vishay.com

Revision: 18-Jul-08 1