J304/305

Vishay Siliconix

N-Channel JFETs

PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)

J304 −2 to −6 −30 4.5 5

J305 −0.5 to −3 −30 3 1

FEATURES BENEFITS APPLICATIONS

D Excellent High Frequency Gain: J304, D Wideband High Gain D High-Frequency Amplifier/Mixer
Gps 11 dB (typ) @ 400 MHz D Very High System Sensitivity D Oscillator
D Very Low Noise: 3.8 dB (typ) @ D High Quality of Amplification D Sample-and-Hold
400 MHz D High-Speed Switching Capability D Very Low Capacitance Switches
D Very Low Distortion D High Low-Level Signal Amplification
D High ac/dc Switch Off-Isolation
D High Gain: AV = 60 @ 100 mA

DESCRIPTION
The J304/305 n-channel JFETs provide high-performance For similar products in TO-236 (SOT-23) packages, see the
amplification, especially at high-frequency. These products 2N/SST5484 series data sheet, or in TO-206AF (TO-72)
are available in tape and reel for automated assembly (see packages, see the 2N/SST4416 series data sheet.
Package Information).

TO-226AA
(TO-92)

S 1

D 2

G
3

Top View

ABSOLUTE MAXIMUM RATINGS

Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −30 V Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C

Notes
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C a. Derate 2.8 mW/_C above 25_C

Document Number: 70236 www.vishay.com

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J304/305
Vishay Siliconix

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits
J304 J305

Parameter Symbol Test Conditions Typa Min Max Min Max Unit
Static
Gate-Source Breakdown Voltage V(BR)GSS IG = −1 mA , VDS = 0 V −35 −30 −30 V

Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 1 nA −2 −6 −0.5 −3 V

Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V 5 15 1 8 mA

VGS = −20 V, VDS = 0 V −2 −100 −100 pA
Gate Reverse Current IGSS
TA = 100_C −0.2 nA
Gate Operating Currentb IG VDG = 10 V, ID = 1 mA −20
pA
Drain Cutoff Current ID(off) VDS = 10 V, VGS = −6 V 2
Drain-Source On-Resistance rDS(on) VGS = 0 V, ID = 300 mA 200 W
Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 V

Dynamic
Common-Source
gfs 4.5 7.5 3 mS
Forward Transconductance
VDS = 15 V
V, VGS = 0 V,
V f = 1 kHz
Common-Source
gos 50 50 mS
Output Conductance
Common-Source Input Capacitance Ciss 2.2
Common-Source
Crss VDS = 15 V, VGS = 0 V 0.7
Reverse Transfer Capacitance pF
p
f = 1 MHz
Common-Source
Coss 1
Output Capacitance
VDS = 10 V, VGS = 0 V nV⁄
Equivalent Input Noise Voltage en 10
f = 100 Hz √Hz

TYPICAL HIGH-FREQUENCY SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits (Typ)
J304 J305

100 400 100 400

Parameter Symbol Test Conditions MHz MHz MHz MHz Unit
High-Frequency
Common-Source Input Conductance giss VDS = 15 V, VGS = 0 V 80 800 80 mS
Common-Source Input Susceptance biss 2 7.5 2 mS
Common-Source Output Conductance goss 60 80 60 mS
VDS = 15 V
V, VGS = 0 V
Common-Source Output Susceptance boss 0.8 3.6 0.8
mS
Common-Source Forward Transconductance gfs 4.4 4.2 3
Common-Source Power Gain Gps VDS = 15 V, ID = 5 mA 20 11
dB
Noise Figure NF RG = 1 kW 1.7 3.8

Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NH
b. Pulse test: PW v300 ms, duty cycle v2%.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

www.vishay.com Document Number: 70236

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Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Drain Current and Transconductance On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage vs. Gate-Source Cutoff Voltage
20 10 500 50

rDS @ ID = 300 mA, VGS = 0 V

rDS(on) − Drain-Source On-Resistance ( Ω )

gos @ VDS = 10 V, VGS = 0 V

gfs − Forward Transconductance (mS)

IDSS

g os− Output Conductance ( µS)

8 40
IDSS − Saturation Drain Current (mA)

16 400 f = 1 kHz

6 rDS 30
12 gfs 300
gos

8 4 200 20

4 IDSS @ VDS = 10 V, VGS = 0 V 2 100 10

gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz

0 0 0 0
0 −2 −4 −6 −8 −10 0 −2 −4 −6 −8 −10
VGS(off) − Gate-Source Cutoff Voltage (V) VGS(off) − Gate-Source Cutoff Voltage (V)

Common-Source Forward Transconductance

Gate Leakage Current vs. Drain Current
100 nA 10
VGS(off) = −3 V VDS = 10 V
5 mA f = 1 kHz
10 nA
gfs − Forward Transconductance (mS)

1 mA 8

0.1 mA
IG − Gate Leakage (A)

1 nA TA = 125_C TA = −55_C
6
IGSS
100 pA @
125_C 25_C
5 mA 4
10 pA 1 mA
125_C
0.1 mA
TA = 25_C 2
1 pA IGSS @ 25_C

0.1 pA 0
0 4 8 12 16 20 0.1 1 10

VDG − Drain-Gate Voltage (V) ID − Drain Current (mA)

Output Characteristics Output Characteristics

10 15
VGS(off) = −2 V VGS(off) = −3 V

8 12
VGS = 0 V VGS = 0 V
ID − Drain Current (mA)
ID − Drain Current (mA)

6 −0.2 V 9 −0.3 V

−0.4 V −0.6 V
−0.9 V
4 −0.6 V 6
−1.2 V
−0.8 V
−1.0 V −1.5 V
2 3
−1.2 V
−1.8 V
−1.4 V
0 0
0 2 4 6 8 10 0 2 4 6 8 10
VDS − Drain-Source Voltage (V) VDS − Drain-Source Voltage (V)

Document Number: 70236 www.vishay.com

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Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Transfer Characteristics Transfer Characteristics
10 10
VGS(off) = −2 V VDS = 10 V VGS(off) = −3 V VDS = 10 V

8 8
TA = −55_C
TA = −55_C

ID − Drain Current (mA)

ID − Drain Current (mA)

25_C
6 6
25_C

4 125_C 4 125_C

2 2

0 0
0 −0.4 −0.8 −1.2 −1.6 −2 0 −0.6 −1.2 −1.8 −2.4 −3
VGS − Gate-Source Voltage (V) VGS − Gate-Source Voltage (V)

Transconductance vs. Gate-Source Voltage Transconductance vs. Gate-Source Voltgage

10 10
VGS(off) = −2 V VDS = 10 V VGS(off) = −3 V VDS = 10 V
f = 1 kHz f = 1 kHz
gfs − Forward Transconductance (mS)

gfs − Forward Transconductance (mS)

8 8

TA = −55_C TA = −55_C
6 6
25_C 25_C

4 125_C 4
125_C

2 2

0 0
0 −0.4 −0.8 −1.2 −1.6 −2 0 −0.6 −1.2 −1.8 −2.4 −3
VGS − Gate-Source Voltage (V) VGS − Gate-Source Voltage (V)

On-Resistance vs. Drain Current Circuit Voltage Gain vs. Drain Current
300 100
TA = 25_C g fs R L
rDS(on) − Drain-Source On-Resistance ( Ω )

AV + 1 ) R g
L os
240 80
Assume VDD = 15 V, VDS = 5 V

VGS(off) = −2 V 10 V
RL + ID
AV − Voltage Gain

180 60

VGS(off) = −3 V VGS(off) = −2 V
120 40

60 20
VGS(off) = −3 V

0 0
0.1 1 10 0.1 1 10

ID − Drain Current (mA) ID − Drain Current (mA)

www.vishay.com Document Number: 70236

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 J304/305
Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Common-Source Input Capacitance Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage vs. Gate-Source Voltage
5 3
f = 1 MHz f = 1 MHz

Crss − Reverse Feedback Capacitance (pF)

4 2.4
Ciss − Input Capacitance (pF)

3 1.8

VDS = 0 V VDS = 0 V
2 1.2

VDS = 10 V VDS = 10 V
1 0.6

0 0
0 −4 −8 −12 −16 −20 0 −4 −8 −12 −16 −20

VGS − Gate-Source Voltage (V) VGS − Gate-Source Voltage (V)

Input Admittance Forward Admittance

100 100
TA = 25_C TA = 25_C
VDS = 15 V VDS = 15 V
VGS = 0 V VGS = 0 V
Common Source Common Source
bis

10 10
gis gfs
(mS)

(mS)

−bfs
1 1

0.1 0.1
100 200 500 1000 100 200 500 1000

f − Frequency (MHz) f − Frequency (MHz)

Reverse Admittance Output Admittance

10 10
TA = 25_C
VDS = 15 V bos
VGS = 0 V −brs
Common Source

1 1

gos
(mS)

(mS)

−grs
0.1 0.1
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source

0.01 0.01
100 200 500 1000 100 200 500 1000

f − Frequency (MHz) f − Frequency (MHz)

Document Number: 70236 www.vishay.com

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J304/305
Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Equivalent Input Noise Voltage vs. Frequency Output Conductance vs. Drain Current
20 20
VDS = 10 V VGS(off) = −3 V

16 16

gos − Output Conductance (µS)

Hz

TA = −55_C
en − Noise Voltage nV /

12 12

25_C
8 8

125_C
ID = 5 mA
4 4
VDS = 10 V
VGS = 0 V f = 1 kHz
0 0
10 100 1k 10 k 100 k 0.1 1 10
f − Frequency (Hz) ID − Drain Current (mA)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?70236.

www.vishay.com Document Number: 70236

6 S-50077—Rev. E, 24-Jan-05
 Legal Disclaimer Notice
Vishay

Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000 www.vishay.com

Revision: 08-Apr-05 1