SST200/200A

Vishay Siliconix

N-Channel JFETs

PRODUCT SUMMARY
VGS(off) (V) V(BR)GSS Min (V) gfS Min (mS) IDSS Min (mA)
-0.3 to -0.9 -25 0.25 0.15

FEATURES BENEFITS APPLICATIONS

D Low Cutoff Voltage: <0.9 V D High Quality Low-Level Signal D Mini-Microphones
D High Input Impedance Amplification D Hearing Aids
D Very Low Noise D Low Signal Loss/System Error D High-Gain, Low-Noise Amplifiers
D High Gain: AV = 80 @ 20 mA D High System Sensitivity D Low-Current, Low-Voltage
Battery-Powered Amplifiers
D Ultra High Input Impedance
Pre-Amplifiers

DESCRIPTION

The SST200/200A features low leakage, very low noise and The TO-236 (SOT-23) and SOT-323 (SC-70 3-leads)
low cutoff voltage for use with low-level power supplies. The packages, provide surface-mount capability and is available in
SST200/200A is excellent for battery powered equipment and tape-and-reel for automated assembly.
low current amplifiers such as mini-microphones.

For applications information see AN102 and AN106.

TO-236 SOT-323
(SOT-23) (SC-70 3-LEADS)

D 1 D 1

3 G 3 G

S 2 S 2

Top View Top View

SST200 (S2)* SST200A (C)*

*Marking Code for TO-236 *Marking Code for SOT-323

Document Number: 70976 www.vishay.com

S-31623—Rev. E, 01-Sep-03 1
SST200/200A
Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25 V Power Dissipation

To-236 (SOT-23)a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
SC-70b . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mW
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Notes
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C a. Derate 2.8 mW/_C above 25_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C b. Derate 1.2 mW/_C above 25_C

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits
Parameter Symbol Test Conditions Min Typa Max Unit
Static
Gate-Source
V(BR)GSS IG = -1 mA , VDS = 0 V -25
Breakdown Voltage V
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 1.0 mA -0.3 -0.9
Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V 0.15 0.7 mA
VGS = -20 V, VDS = 0 V -2 -100 pA
Gate Reverse Current IGSS
TA = 125_C -1 nA
Gate Operating Current IG VDG = 10 V, ID = 0.1 mA -2
pA
Drain Cutoff Current ID(off) VDS = 15 V, VGS = -5 V 2
Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 V

Dynamic
Common-Source VDS = 15 V, VGS = 0 V
gfs 0.25 0.7 mS
Forward Transconductance f = 1 kHz
Common-Source
Ciss 4.5
Input Capacitance
VDS = 15 V, VGS = 0 V
pF
Common-Source f = 1 MHz
Crss 1.3
Reverse Transfer Capacitance
VDS = 10 V, VGS = 0 V nV⁄
Equivalent Input Noise Voltage en 6
f = 1 kHz √Hz

Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NPA
b. Pulse test: PW v300 ms duty cycle v3%.

www.vishay.com Document Number: 70976

2 S-31623—Rev. E, 01-Sep-03
 SST200/200A
Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage Gate Leakage Current
1.0 2.0 10 nA
IG @ ID = 500 mA
IDSS @ VDS = 10 V, VGS = 0 V 1.8
0.9 gfs @ VDS = 10 V, VGS = 0 V ID = 100 mA
f = 1 kHz

gfs - Forward Transconductance (µS)

0.8 1.6 1 nA TA = 125_C
IDSS - Saturation Drain Current (mA)

0.7 1.4

0.6 1.2 100 pA IGSS @ 125_C

IG - Gate Leakage
gfs
0.5 1.0
ID = 500 mA
0.4 0.8 10 pA
ID = 100 mA
0.3 0.6
IDSS TA = 25_C
0.2 0.4 1 pA IGSS @ 25_C
0.1 0.2
0.0 0 0.1 pA
0.0 0.2 0.4 0.6 0.8 1.0 0 15 30
VGS(off) - Gate-Source Cutoff Voltage (V) VDG - Drain-Gate Voltage (V)

Output Characteristics Transfer Characteristics

400 500

VGS(off) = -0.7 V VGS(off) = -0.7 V VDS = 10 V

VGS = 0 V
360 400
ID - Drain Current (mA)
ID - Drain Current (mA)

-0.1 V TA = -55_C
240 300

25_C
160 -0.2 V 200

-0.3 V 125_C
80 100
-0.5 V -0.4 V

0 0
0 4 8 12 16 20 0 -0.1 -0.2 -0.3 -0.4 -0.5
VDS - Drain-Source Voltage (V) VGS - Gate-Source Voltage (V)

Transconductance vs. Gate-Source Voltage

1.5
VGS(off) = -0.7 V VDS = 10 V
f = 1 kHz
gfs - Forward Transconductance (mS)

1.2

TA = -55_C

0.9 25_C

0.6
125_C

0.3

0
0 -0.1 -0.2 -0.3 -0.4 -0.5
VGS - Gate-Source Voltage (V)

Document Number: 70976 www.vishay.com

S-31623—Rev. E, 01-Sep-03 3
SST200/200A
Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Circuit Voltage Gain vs. Drain Current On-Resistance vs. Drain Current
200 2000

g fs R L

rDS(on) - Drain-Source On-Resistance ( Ω )

AV + 1 ) R g
160 L os 1600
Assume VDD = 15 V, VDS = 5 V
10 V VGS(off) = -0.7 V
AV - Voltage Gain

120 RL + ID 1200

80 800
VGS(off) = -0.7 V
-1.5 V
-1.5 V
40 400

0 0
0.01 0.1 1 0.01 0.1 1
ID - Drain Current (mA) ID - Drain Current (mA)

Common-Source Input Capacitance Common-Source Reverse Feedback Capacitance

vs. Gate-Source Voltage vs. Gate-Source Voltage
10 5
f = 1 MHz f = 1 MHz
Crss - Reverse Feedback Capacitance (pF)

8 4
C iss - Input Capacitance (pF)

6 3

VDS = 0 V VDS = 0 V

4 2

10 V

2 1
10 V

0 0
0 -4 -8 -12 -16 -20 0 -4 -8 -12 -16 -20
VGS - Gate-Source Voltage (V) VGS - Gate-Source Voltage (V)

Equivalent Input Noise Voltage vs. Frequency Output Characteristics

20 300

VDS = 10 V VGS(off) = -0.7 V

VGS = 0 V

16 240
Hz

ID - Drain Current (µA)

en - Noise Voltage nV /

-0.1
ID @ 100 mA 180
12

-0.2
8 120

VGS = 0 V -0.3
-0.5
4 60
-0.4

0 0
10 100 1k 10 k 100 k 0 0.1 0.2 0.3 0.4 0.5

f - Frequency (Hz) VDS - Drain-Source Voltage (V)

www.vishay.com Document Number: 70976

4 S-31623—Rev. E, 01-Sep-03
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