VUM 33-06PH

Power MOSFET Stage Single Phase

Rectifier
Boost Diode MOSFET
for Boost Converters VRRM = 1600 V VRRM = 600 V VDSS = 600 V
IDAV = 106 A IF25 = 60 A ID25 = 50 A
Module for Power Factor Correction IFSM = 300 A VF (30A) = 2.24 V RDS(on) = 120 mΩ

Part name (Marking on product)

VUM33-06PH
2 4 6
3 4
2
D 1
D1 D3

3
D2 D4 T DT
8
7
5 6

5 8 7

Features: Advantages: Package:

• Package with DCB ceramic base plate
• Soldering connections for PCB
mounting
• Isolation voltage 3600 V~
• Low RDS(on) Polar™ MOSFET
• Low package inductance for high • High temperature and power SMPS, UPS, battery chargers and
speed switching
• SONIC™ boost diode
- fast and soft reverse recovery
- low operating forward voltage
• 3 functions in one package • "V1-Pack" standard outline
• Output power up to 8 kW Insulated copper base plate
• No external isolation
• Easy to mount with two screws Application:
• Suitable for wave soldering • Power factor pre-conditioner for
cycling capability inverters
• Fits easily to all available PFC • Boost topology for SMPS including
controller ICs 1~ rectifier bridge
• Power supply for welding equipment

IXYS reserves the right to change limits, test conditions and dimensions. 20100921b

© 2010 IXYS All rights reserved 1-8

 VUM 33-06PH

MOSFET T
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VDSS drain source voltage TVJ = 25°C 600 V
VGSS max. DC gate voltage continuous ±20 V
VGSM max. transient gate source voltage transient ±30 V
ID25 drain current TC = 25°C 50 A
ID80 TC = 80°C 37 A
Ptot total power dissipation TC = 80°C 500 W
RDS(on) drain source on resistance ID = 30 A; VGE = 10 V TVJ = 25°C 120 mΩ
TVJ = 125°C 240 mΩ
VGS(th) gate source threshold voltage IC = 8 mA; VDS = VGS TVJ = 25°C 2.5 5.0 V
IDSS drain source leakage current VDS = VDSS; VGS = 0 V TVJ = 25°C 50 µA
TVJ = 125°C 500 µA
IGSS gate source leakage current VGS = ±20 V; VDS = 0 V ±500 nA
Ciss input capacitance VDS = 25 V; VGS = 0 V; f = 1 MHz 8.0 nF
QG(on) total gate charge VDS = 300 V; VGS = 10 V; ID = 50 A 165 nC
td(on) turn-on delay time 56 ns
tr current rise time inductive load TVJ = 25°C 12 ns
td(off) turn-off delay time VDS = 380 V; ID = 20 A 110 ns
tf current fall time VGS = 0/10 V; RG = 4.7 W 12 ns
Eon turn-on energy per pulse RG eff = 5.5 W 1) 0.3 mJ
Eoff turn-off energy per pulse 0.16 mJ
td(on) turn-on delay time 56 ns
tr current rise time inductive load TVJ = 125°C 16 ns
td(off) turn-off delay time VDS = 380 V; ID = 20 A 144 ns
tf current fall time VGS = 0/10 V; RG = 4.7 W 14 ns
Eon turn-on energy per pulse RG eff = 5.5 W 1) 0.47 mJ
Eoff turn-off energy per pulse 0.20 mJ
RthJC thermal resistance junction to case 0.14 K/W
RthJH thermal resistance case to heatsink with heat transfer paste (IXYS test setup) 0.18 0.24 K/W
1)
RG eff includes the driver resistance of 0.8 W

IXYS reserves the right to change limits, test conditions and dimensions. 20100921b

© 2010 IXYS All rights reserved 2-8

 VUM 33-06PH

Boost Diode D
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VRRM max. repetitve reverse voltage TVJ = 25°C 600 V
IF25 forward current TC = 25°C 60 A
IF80 TC = 80°C 40 A
VF forward voltage IF = 30 A; VGE = 0 V TVJ = 25°C 2.24 V
TVJ = 125°C 2.19 V
IR reverse current VR = VRRM TVJ = 25°C 30 µA
TVJ = 125°C 2 mA
Qrr reverse recovery charge 0.24 µC
VR = 380 V
IRM max. reverse recovery current 11.7 A
diF /dt = -790 A/µs
2)
TVJ = 25°C
trr reverse recovery time 43 ns
IF = 20 A
Erec reverse recovery energy 0.026 mJ
Qrr reverse recovery charge 0.59 µC
VR = 380 V
IRM max. reverse recovery current 15.9 A
diF /dt = -700 A/µs
2)
TVJ = 125°C
trr reverse recovery time 55 ns
IF = 20 A
Erec reverse recovery energy 0.076 mJ
RthJC thermal resistance junction to case 0.72 K/W
RthJH thermal resistance case to heatsink with heat transfer paste (IXYS test setup) 0.84 0.96 K/W
2)
Test setup: MOSFET T driven with RG eff = 5.5 W and VGS = 0/10 V

Input Rectifier Bridge D1 - D4

Ratings
Symbol Definitions Conditions min. typ. max. Unit
VRRM max. repetitive reverse voltage TVJ = 25°C 1600 V
IDAV average forward output current sine 180° TC = 80°C 106 A
IFAVM max. average forward current (per diode) rect.; d = 0.5 TC = 80°C 57 A
IF25 forward current DC TC = 25°C 106 A
IF80 forward current DC TC = 80°C 71.5 A
IFSM max. forward surge current t = 10 ms; sine 50 Hz TVJ = 45°C 300 A
TVJ = 125°C 170 A
I2t I2t value for fusing t = 10 ms; sine 50 Hz TVJ = 45°C 450 A2s
TVJ = 125°C 240 A2s
Ptot total power dissipation TC = 80°C 110 W
VF forward voltage IF = 50 A TVJ = 25°C 1.39 V
TVJ = 150°C 1.39 V
IR reverse current VR = VRRM TVJ = 25°C 20 µA
TVJ = 150°C 1.5 mA
RthJC thermal resistance junction to case (per diode) 0.64 K/W
RthJH thermal resistance case to heatsink with heat transfer paste (IXYS test setup) 0.72 0.85 K/W

Module
Ratings
Symbol Definitions Conditions min. typ. max. Unit
TVJ operating temperature -40 150 °C
TVJM max. virtual junction temperature -40 150 °C
Tstg storage temperature -40 125 °C
VISOL isolation voltage IISOL < 1 mA; 50/60 Hz; 1 sec. 3600 V~
Md mounting torque (M5) 2 2.5 Nm
Weight 35 g
TC = 25°C unless otherwise stated

IXYS reserves the right to change limits, test conditions and dimensions. 20100921b

© 2010 IXYS All rights reserved 3-8

 VUM 33-06PH

Outline Drawing Dimensions in mm (1 mm = 0.0394“)

Logo
XXX XX-XXXXX YYCW

Part name Date Code

Product Ordering

Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code
Standard VUM 33-06PH VUM 33-06PH Box 10 508843

IXYS reserves the right to change limits, test conditions and dimensions. 20100921b

© 2010 IXYS All rights reserved 4-8

 VUM 33-06PH

1.16 60
IDSS = 1 mA
1.12 50

1.08 40
ID
VDSS 1.04 30
normalized
[A]
1.00 20
TJ = 125°C
0.96 10
TJ = 25°C
0.92 0
-40 -20 0 20 40 60 80 100 120 140 2 3 4 5 6 7
TJ [°C] VGS [V]
Fig. 1 Drain source breakdown voltage Fig. 2 Typical transfer characteristics
VDSS versus junction temperature

70 70
TJ = 25°C TJ = 125°C
VGS = 15/10 V 7V
60 60
VGS = 15/10 V
7V 6.5 V
50 50
6.5 V
ID 40 ID 40
6V
[A] 30 [A] 30
6V
20 20
5.5 V
10 10
5.5 V
5V 5V
0 0
0 2 4 6 8 10 0 4 8 12 16 20
VDS [V] VDS [V]

Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics

3.0 300 2.4

5V 5.5 V VGS = 6V

VGS = 10 V
2.5 ID = 20 A
250
2.0 TVJ = 125°C
RDSon
2.0 200 RDSon RDSon
RDSon
RDSon 1.6
normalized
normalized
1.5 normalized
150 [mΩ] 6.5/7/10/15 V

1.2
1.0 100

0.5 50 0.8
-25 0 25 50 75 100 125 150 0 10 20 30 40 50 60
TVJ [°C] ID [A]

Fig. 5 Drain source on-state resistance Fig. 6 Drain source on-state resistance
RDSon versus junction temperature RDSon versus ID normalized to RDSon
at VGS = 10 V and ID = 20 A

IXYS reserves the right to change limits, test conditions and dimensions. 20100921b

© 2010 IXYS All rights reserved 5-8

 VUM 33-06PH

12 70
ID = 60 A
10 60
VDS = 380 V

50
8
VGS
ID 40
6
[V]
[A] 30
4
20
2
10

0 0
0 50 100 150 200 -40 -20 0 20 40 60 80 100 120 140 160
QG [nC] TC [°C]
Fig. 7 Gate charge characteristics Fig. 8 Drain current ID versus case temperature TC

1.6 80 1.0 200

1.4 70
0.8 160
1.2 td(on) 60
td(off)
1.0 50 120
Eon RG = 4.7 Ω t Eoff 0.6 RG = 4.7 Ω
t
0.8 VDS = 380 V 40 VDS = 380 V
[ns]
VGS = 0/10 V tr [ns] VGS = 0/10 V
[mJ] 0.6 30
[mJ] 0.4 80
TVJ = 125°C TVJ = 125°C

0.4 20
Eon
0.2 40
Eoff tf
0.2 10
Erec boost
0.0 0 0.0 0
0 10 20 30 40 50 0 10 20 30 40 50
ID [A] ID [A]

Fig. 9 Typ. turn-on energy and switching times Fig. 10 Typ. turn-off energy and switching times
versus drain current, inductive switching versus drain current, inductive switching

1.0 100 0.6 300

ID = 20 A
ID = 20 A
VDS = 380 V
VDS = 380 V td(on) 250
0.8 80 VGS = 0/10 V
VGS = 0/10 V td(off)
TVJ = 125°C
TVJ = 125°C
0.4 200
Eon,
0.6 60
Erec t Eoff t
150
Eon [ns]
0.4 40 [mJ] [ns]
[mJ]
tr 0.2 100
Eoff

0.2 20
50
tf
Erec boost
0.0 0 0.0 0
4 5 6 7 8 9 10 11 4 6 8 10
RG [Ω]
RG [Ω]

Fig. 11 Typ. turn-on energy and switching times Fig. 12 Typ. turn-off energy and switching times
versus gate resistor, inductive switching versus gate resistor, inductive switching

IXYS reserves the right to change limits, test conditions and dimensions. 20100921b

© 2010 IXYS All rights reserved 6-8

 VUM 33-06PH

80 20
VR = 380 V VR = 380 V
TVJ = 125°C 40 A TVJ = 125°C
70 18

trr 60 16
20 A IRM
40 A
[ns] 50 [A] 14
10 A 20 A

40 12 10 A

30 10
4 5 6 7 8 9 10 11 4 5 6 7 8 9 10 11
RG [Ω] RG [Ω]
Fig. 13 Reverse recovery time trr of the boost Fig. 14 Reverse recovery current IRM of the boost
diode versus RG of boost MOSFET diode versus RG of the boost MOSFET

0.9 0.12
VR = 380 V VR = 380 V
TVJ = 125°C TVJ = 125°C
0.8
0.10
40 A
0.7 40 A
QRR 0.08
Erec
0.6
[µC] 20 A 20 A
[mJ] 0.06
0.5
10 A
10 A 0.04
0.4

0.3 0.02
4 5 6 7 8 9 10 11 4 5 6 7 8 9 10 11
RG [Ω] RG [Ω]

Fig. 15 Reverse recovery charge QRR IRM Fig. 16 Reverse recovery energy Erec
of the boost diode versus RG of the boost diode versus RG

0.8 60

40 A
50
0.7

20 A 40
QRR 0.6 IF

[µC] 30
[A]
0.5
25°C
10 A 20 125°C
4.7 Ω 150°C
6.8 Ω 5.6 Ω
0.4
10 Ω 10

0.3 0
500 550 600 650 700 750 800 850 0.0 0.5 1.0 1.5 2.0 2.5 3.0
-di/dt [A(µs] VF [V]
Fig. 17 Typ. turn off characteristics
Fig. 18 Forward characteristics boost diode
of the boost diode versus di/dt

IXYS reserves the right to change limits, test conditions and dimensions. 20100921b

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 VUM 33-06PH

70 350 500
f = 50 Hz VR = 0 V
VR = 0.8VRRM
60 300
400
50 250
2
IF 40 IFSM 200 I t 300
TVJ = 45°C TVJ = 45°C

30 150 2
[A] [A] [A s] 200
20 100 TVJ = 125°C
TVJ = 125°C
TVJ=125°C 100
10 TVJ= 25°C 50

0 0 0
0.0 0.4 0.8 1.2 1.6 2.0 0.001 0.01 0.1 1 1 10
VF [V] t [s] t [ms]
Fig. 19 Forward current vs. Fig. 20 Non-repetitive peak Fig. 21 I2t for fusing
voltage drop of input surge current (Rectifier Diodes)
rectifier diode (Rectifier Diodes)

Boost Diode
0.8
Rectifier Diode

0.6
ZthJH Fig. 22
0.4 Typ. transient thermal impedances of
Boost Diode and Rectifier Diode
[K/W]

0.2

0.0
1 10 100 1000 10000
t [ms]

0.20
MOSFET

0.15

ZthJH Fig. 23
0.10 Typ. transient thermal impedances of
MOSFET
[K/W]

0.05

0.00
1 10 100 1000 10000
t [ms]
IXYS reserves the right to change limits, test conditions and dimensions. 20100921b

© 2010 IXYS All rights reserved 8-8

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VUM33-06PH