Solution: Answer: See the graph.

ΔP = D(TA – 25°C)  (Eq. 10-40)

ΔP = (5 mW/°C)(100°C – 25°C) IC
ΔP = 375 mW 20 mA
16 mA Alternating current
PD(max) = PD – ΔP
PD(max) = 625 mW – 375 mW 12 mA
Q
PD(max) = 250 mW 8 mA Direct
Answer: The worst-case power rating is 250 mW. 4 mA current
VCE
10-46. Given: Derating curve on Fig. 10-34. 0 mA
0V 11.5 V 15 V
Answer: The maximum dissipation at 100°C is 2 W.
10-47. Given: 10-53. C2 is shorted
PD = 115 W
10-54. D1 is open
D = 0.657 W/°C
TC = 90°C 10-55. VCC is now 20 V
Solution: 10-56. Q1 B-E shorted
ΔP = D(TC – 25°C)  (Eq. 10-40) 10-57. R6 is shorted
ΔP = (0.657 W/°C)(90°C – 25°C)
ΔP = 42.7 W 10-58. Class-B/AB push-pull power amplifier
PD(max) = PD – ΔP 10-59. Approximately 24 Vp-p
PD(max) = 115 W – 42.7 W 10-60. Compensation diodes used for temperature stability
PD(max) = 72.3 W
10-61. 511 microamps
Answer: The power rating is 72.3 W with a case tempera-
ture of 90°C. 10-62. Approximately zero volts dc

CRITICAL THINKING
10-48. Answer: The input is larger than the maximum allowed
input for an undistorted output. The input is driving the
output into saturation, clipping the wave off, and turning
it into a square wave.
10-49. Answer: Electrically, it would be safe to touch, but it may
be hot and cause a burn.
10-50. Answer: No, the maximum efficiency of anything is
100 percent. It is impossible to get more power out of a
device than is put into the device.
10-51. Answer: No, the ac load line is more vertical because the
ac collector resistance is usually less than the dc collec-
tor resistance. If the collector had an inductor instead of
a resistor, the ac resistance would be greater than the dc
resistance and make the ac load line less vertical.
10-52. Given:
IC(sat) = 16.67 mA   (from Prob. 10-1)
VCC = 15 V
ICQ = 9.77 mA   (from Prob. 10-2)
MP = ICQ rc = 5.31 V   (from Prob. 10-3)
VCEQ = 6.21 V   (from Prob. 10-3)
Solution:
The left side of the dc load line is IC(sat), and the right side
is VCC. The Q point is ICQ, VCEQ. The ac load line passes
through the Q point. The right side of the ac load line is
ICQ rc above the Q point, or 11.52 V. This gives the line
a slope of ICQ/ICQ rc = 9.77 mA/5.31 V = 1.84 mA/V. To
find the ac saturation current, take the ac voltage maxi-
mum multiplied by the slope = (11.52 V) (1.84 mA/V) =
21.2 mA.
Chapter 11  JFETs
SELF-TEST
1. a 8. c 14. d 20. c
2. d 9. d 15. a 21. c
3. c 10. c 16. b 22. b
4. d 11. c 17. c 23. b
5. b 12. a 18. c 24. d
6. b 13. c 19. a 25. d
7. d
JOB INTERVIEW QUESTIONS
7. The gate can be triggered using the static electricity of the
human hand to put the device into saturation briefly, enough
to trigger another circuit, such as a one-shot multivibrator.
10. It has low input capacitance that allows it to amplify higher fre-
quencies (VHF and UHF) than are possible with a CS amplifier.
11. Although they do not have as much voltage gain as bipolar
transistors, they have a high input impedance and very low
noise. This is preferred in applications in which the incoming
signal may be a few microvolts to be followed by an amplifi-
cation of a million or more.
PROBLEMS
11-1. Given:
IG = 1 nA
Reverse voltage = –15 V
Solution:
Rin = Reverse voltage/IG
Rin = 15 V/1 nA
Rin = 15 GΩ
Answer: The input resistance is 15 GΩ.

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 11-2. Given: Solution:
IG = 1 μA VGS/VGS(off) = 1/2
Reverse voltage = –20 V VGS = 1/2(VGS(off))
Ambient Temperature = 100°C VGS = 1/2(–6 V)
VGS = –3 V
Solution:
Rin = Reverse voltage/IG ID /IDSS = 1/4
Rin = 20 V/1 nA ID = 1/4 16 mA
Rin = 20 MΩ ID = 4 mA

Answer: The input resistance of the gate is 20 MΩ at Answer: The gate voltage at the 1/2 cutoff point is –3 V,
100°C. and the drain current is 4 mA.

11-3. Given: 11-7. Given:

IDSS = 20 mA IDSS = 10 mA
VP = 4 V VGS(off) = –4 V

Solution: Solution:
IDSS = Maximum drain current = 20 mA VGS/VGS(off) = 1/2
VGS(off) = –VP  (Eq. 11-2) VGS = 1/2(VGS(off))
VGS(off) = –4 V VGS = 1/2(–4 V)
VGS = –2 V
RDS = VP /IDSS    (Eq. 11-1)
RDS = 4 V/20 mA ID/IDSS = 1/4
RDS = 200 Ω ID = 1/4 10 mA
ID = 2.5 mA
Answer: The maximum drain current is 20 mA, the
gate-source cutoff voltage is –4 V, and the value of RDS Answer: The gate voltage at the 1/2 cutoff point is –2 V,
is 200 Ω. and the drain current is 2.5 mA.

11-4. Given: 11-8. Given:

IDSS = 16 mA IDSS = 14 mA
VGS(off) = –2 V VGS(off) = –4 V
VGS(1) = –1 V
Solution: VGS(2) = –3 V
VGS(off) = –VP  (Eq. 11-2) Solution:
VP = 2 V
ID = IDSS[1 – (VGS(1)/VGS(off))]2    (Eq. 11-3)
RDS = VP /IDSS    (Eq. 11-1) ID = 14 mA[1 – (–1 V/–4V)]2
RDS = 2 V/16 mA ID = 7.88 mA
RDS = 125 Ω
ID = IDSS[1 – (VGS(2)/VGS(off))]2  (Eq. 11-3)
Answer: The pinch-off voltage is 2 V, and the value of ID = 14 mA[1 – (–3 V/–4V)]2
RDS is 125 Ω. ID = 0.88 mA
11-5. Given: Answer: The drain current is 7.88 mA when the gate
IDSS(min) = 1 mA voltage is –1 V, and 0.88 mA when the gate voltage
IDSS(max) = 5 mA is –3 V.
VGS(off)min = –0.5 V 11-9. Given:
VGS(off)max = –6 V
VDD = 15 V
Solution: RD = 10 kΩ
VGS(off) = –VP  (Eq. 11-2) VGS(off) = –3 V
VP(min) = 0.5 V IDSS = 5 mA
VP(max) = 6 V Solution:
RDS(min) = VP(min)/IDSS(min)  (Eq. 11-1) ID(sat) = VDD /RD
RDS(min) = 0.5 V/1 mA ID(sat) = 15 V/10 kΩ
RDS(min) = 500 Ω ID(sat) = 1.5 mA
RDS(max) = VP(max)/IDSS(max)  (Eq. 11-1) VGS(off) = –VP  (Eq. 11-2)
RDS(max) = 6 V/5 mA VP = 3 V
RDS(max) = 1.1 kΩ
RDS = VP /IDSS  (Eq. 11-1)
Answer: The minimum value of RDS is 500 Ω, and the RDS = 3 V/5 mA
maximum value is 1.1 kΩ. RDS = 600 Ω
11-6. Given: VD = [RDS/(RDS + RD)]VDD
IDSS = 16 mA VD = [600 Ω/(600 Ω + 10 kΩ)]15 V
VGS(off) = –6 V VD = 0.849 V
Answer: The drain saturation current is 1.5 mA, and the
drain voltage is 0.849 V.

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 11-10. Given: Solution:
VDD = 15 V VG = [R2/(R1 + R2)]VDD
RD = 20 kΩ VG = [1 MΩ/(1.5 MΩ + 1 MΩ)] 25 V
IDSS = 5 mA VG = 10 V
VGS(off) = –3 V
ID = VG/RS  (Eq. 11-10)
Solution: ID = 10 V/22 kΩ
VGS(off) = –VP  (Eq. 11-2) ID = 0.455 mA
VP = 3 V VD = VDD – IDRD  (Eq. 11-4)
RDS = VP /IDSS    (Eq. 11-1) VD = 25 V – (0.455 mA)(10 kΩ)
RDS = 3 V/5 mA VD = 20.45 V
RDS = 600 Ω Answer: The drain voltage is 20.45 V.
VD = [RDS/(RDS + RD)]VDD 11-14. Given:
VD = [600 Ω/(600 Ω + 20 kΩ)]15 V
R1 = 1.5 MΩ
VD = 0.437 V
R2 = 1 MΩ
Answer: The drain voltage is 0.437 V. RS = 22 kΩ
RD = 10 kΩ
11-11. Given:
VDD = 25 V
VDD = 20 V VG = 10 V   (from Prob. 11-13)
RD = 20 kΩ
VGS(off) = –6 V ID = 0.455 mA   (from Prob. 11-13)
IDSS = 30 mA VD = 20.45 V   (from Prob. 11-13)

Solution: Solution:
VGS(off) = –VP  (Eq. 11-2) ID(sat) = VDD/(RD + RS)
VP = 6 V ID(sat) = 25 V/(10 kΩ + 22 kΩ)
ID(sat) = 0.781 mA
RDS = VP/IDSS  (Eq. 11-1)
RDS = 6 V/30 mA VS ≈ VG
RDS = 200 Ω
VDSQ = VD – VS
VD = [RDS/(RDS + RD)]VDD VDSQ = 20.45 V – 10 V
VD = [200 Ω/(200 Ω + 20 kΩ)]20 V VDSQ = 10.45 V
VD = 0.198 V
Answer: The drain voltage is 0.198 V. ID (mA)
0.781
11-12. Given:
Q
VDD = 20 V 0.455
RD = 10 kΩ
VGS(off) = –6 V
IDSS = 30 mA
Solution: 10.45 VDS (V) 25
ID(sat) = VDD/RD DC load line and Q point for Prob. 11–14.
ID(sat) = 20 V/10 kΩ 11-15. Given:
ID(sat) = 2 mA
VDD = 25 V
VGS(off) = VP  (Eq. 11-2) VSS = –25 V
VP = 6 V RD = 7.5 kΩ
RDS = VP/IDSS  (Eq. 11-1) RS = 18 kΩ
RDS = 6 V/30 mA Solution:
RDS = 200 Ω ID = VSS/RS  (Eq. 11-12)
VD = [RDS/(RDS + RD)]VDD ID = –25 V/18 kΩ
VD = [200 Ω/(200 Ω + 10 kΩ)]20 V ID = 1.39 mA
VD = 0.392 V VD = VDD – IDRD  (Eq. 11-4)
Answer: The drain saturation current is 2 mA, and the VD = 25 V – (1.39 mA)(7.5 kΩ)
drain voltage is 0.392 V. VD = 14.58 V
11-13. Given: Answer: The drain voltage is 14.58 V.
R1 = 1.5 MΩ 11-16. Given:
R2 = 1 MΩ VDD = 25 V
RS = 22 kΩ VSS = –25 V
RD = 10 kΩ RD = 7.5 kΩ
VDD = 25 V RS = 30 kΩ

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 Solution: Solution:
ID = VSS/RS  (Eq. 11-12) ID = VS/RS
ID = –25 V/30 kΩ ID = 1.5 V/1 kΩ
ID = 0.833 mA ID = 1.5 mA
VD = VDD – IDRD  (Eq.11-4) VD = VDD – IDRD
VD = 25 V – (0.833 mA)(7.5 kΩ) VD = 25 V – (1.5 mA)(8.2 kΩ)
VD = 18.75 V VD = 12.7 V
Answer: The drain voltage is 18.75 V. Answer: The drain voltage is 12.7 V.
11-17. Given: 11-21. Given:
VDD = 15 V VDD = 25 V
VEE = –9 V RD = 10 kΩ
RD = 7.5 kΩ RS = 22 kΩ
RE = 8.2 kΩ R1 = 1.5 MΩ
VBE = 0.7 V R2 = 1 MΩ
Solution: Answer: The gate-source voltage is –2.5 V, and the drain
ID = (VEE – VBE)/RE  (Eq.11-13) current is 0.55 mA from the transconductance curve.
ID = (9 V – 0.7 V)/8.2 kΩ 11-22. Given:
ID = 1.01 mA
VDD = 15 V
VD = VDD – IDRD  (Eq.11-4) RG = 2.2 MΩ
VD = 15 V – (1.01 mA)(7.5 kΩ) RE = 8.2 kΩ
VD = 7.43 V VEE = –9 V
Answer: The drain voltage is 7.43 V, and the drain cur- Answer: The gate-source voltage is –2.0 V, and the drain
rent is 1.01 mA. voltage is 7.5 V from the transconductance curve.
11-18. Given: 11-23. Given:
VDD = 15 V VDD = 25 V
VEE = –9 V RG = 1.5 MΩ
RD = 4.7 kΩ RS = 1 kΩ
RE = 8.2 kΩ
Answer: The gate-source voltage is –1.5 V, and the drain
VBE = 0.7 V
current is 1.5 mA.
Solution:
11-24. Given:
ID = (VEE – VBE)/RE  (Eq.11-13)
ID = (9 V – 0.7 V)/8.2 kΩ VDD = 25 V
ID = 1.01 mA RG = 1.5 MΩ
RS = 2 kΩ
VD = VDD – IDRD  (Eq.11-4)
VD = 15 V – (1.01 mA)(4.7 kΩ) Answer: The gate-source voltage is –2.0 V, and the drain
VD = 10.25 V current is 1 mA and the drain-source voltage is 14.8 V.
Answer: The drain voltage is 10.25 V, and the drain cur- 11-25. Given:
rent is 1.01 mA. gm0 = 4000 μs
11-19. Given: IDSS = 10 mA
VDD = 25 V Solution:
RD = 8.2 kΩ VGS(off) = –2IDSS/gm0  (Eq.11-15)
RS = 1 kΩ VGS(off) = –2(10 mA)/4000 μs
ID = 1.5 mA VGS(off) = –5 V
Solution: gm = gm0 [1 – (VGS/VGS(off))]  (Eq.11-16)
VGS = –IDRS  (Eq.11-7) gm = 4000 μs[1 – (–1 V/–5V)]
VGS = –(1.5 mA)(1 kΩ) gm = 3200 μs
VGS = –1.5 V Answer: The gate-source cutoff voltage is –5 V, and the
VD = VDD – IDRD – IDRS gm0 for VGS = –1 V is 3200 μs.
VD = 25 V – (1.5 mA)(8.2 kΩ) – (1.5 mA)(1 kΩ) 11-26. Given:
VD = 11.2 V
gm0 = 1500 μs
Answer: The gate-source voltage is –1.5 V, and the drain- IDSS = 2.5 mA
source voltage is 11.2 V. VGS = –1 V
11-20. Given: Solution:
VDD = 25 V VGS(off) = –2IDSS/gm0  (Eq.11-15)
RD = 8.2 kΩ VGS(off) = –2(2.5 mA)/1500 μs
RS = 1 kΩ VGS(off) = –3.33 V
VS = 1.5 V

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 gm = gm0 [1 – (VGS/VGS(off))]  (Eq.11-16) Solution:
gm = 1500 μs[1 – (–1 V/–3.3 V)] rd = RD || RL
gm = 1045 μs rd = 1 kΩ || 10 kΩ
Answer: The gm for VGS = –1 V is 1045 μs. rd = 909 Ω
11-27. Given: VGS(off) = –2IDSS/gm0  (Eq.11-15)
gm0 = –2IDSS/VGS(off)
gm0 = 6000 μs
gm0 = –2(12 mA)/–4 V
IDSS = 12 mA
gm0 = 6000 μs
VGS = –2 V
VG = [R2/(R1 + R2)]VDD
Solution:
VG = [10 MΩ/(20 MΩ + 10 MΩ)] 30 V
VGS(off) = –2IDSS/gm0  (Eq.11-15) VG = 10 V
VGS(off) = –2(12 mA)/6000 μs
VGS(off) = –4 V ID = VG/RS  (Eq.11-10)
ID = 10 V/2 kΩ
Since the ratio of VGS to VGS(off) is one-half, the following ID = 5 mA
equation can be used:
From the graph, VGS is approximately –1.4 V when ID is
ID/IDSS = 1/4 5 mA.
ID = 1/4(IDSS)
ID = 1/4(12 mA) With Eq.11-16, gm0 = 3900 μs. Then:
ID = 3 mA Av = gmrd  (Eq.11-17)
gm = gm0 [1 – (VGS /VGS(off))]  (Eq.11-16) Av = (3900 μs)(909 Ω)
gm = 6000 μs[1 – (–2 V/–4 V)] Av = 3.54
gm = 3000 μs vout = Av(vin)
Answer: The drain current is 3 mA, and the transcon- vout = 3.54(2 mV)
ductance is 3000 μs. vout = 7.09 mV

11-28. Given: Answer: The output voltage is 7.09 mV.

VDD = 30 V 11-30. Given:
R1 = 20 MΩ VDD = 30 V
R2 = 10 MΩ R1 = 20 MΩ
RD = 1 kΩ R2 = 10 MΩ
RS = 2 kΩ RS = 3.3 kΩ
RL = 10 kΩ RL = 1 kΩ
vg = 2 mV vin = 5 mV
gm = 3000 μs gm = 2000 μs
Solution: Solution:
rd = RD || RL rS = RS || RL
rd = 1 kΩ || 10 kΩ rS = 3.3 kΩ || 1 kΩ
rd = 909 Ω rS = 767 Ω
zin = R1 || R2 Av = (gmrs)/(1 + gmrs)  (Eq.11-21)
zin = 20 MΩ || 10 MΩ Av = (2000 μs)(767 Ω)/[1 + (2000 μs)(767 Ω)]
zin = 6.67 MΩ Av = 0.605
Av = gmrd  (Eq.11-17) vout = Av(vin)
Av = (3000 μs)(909 Ω) vout = (0.605)(5 mV)
Av = 2.73 vout = 3.03 mV
vout = Av(vin) zout = RS || 1/gm
vout = (2.73)(2 mV) zout = 3.3 kΩ || 1/2000 μs
vout = 5.46 mV zout = 434 Ω
Answer: zin = 6.67 MΩ and the output voltage is 5.46 mV. Answer: The output voltage is 3.03 mV and zout is 434 Ω.
11-29. Given: 11-31. Given:
VDD = 30 V VDD = 30 V
R1 = 20 MΩ R1 = 20 MΩ
R2 = 10 MΩ R2 = 10 MΩ
RD = 1 kΩ RS = 3.3 kΩ
RS = 2 kΩ RL = 1 kΩ
RL = 10 kΩ vin = 5 mV
vg = 2 mV
IDSS = 12 mA   (from the graph) IDSS = 6 mA   (from the graph)
VGS(off) = –4 V   (from the graph) VGS(off) = –4 V    (from the graph)
rS = 767 Ω    (from Prob.11-30)

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 Solution: vout = [RD/(RDS + Rout)]vin
VGS(off) = –2IDSS/gm0  (Eq.11-15) vout = [33 kΩ/(600 Ω + 33 kΩ)]25 mVp-p
vout = 24.55 mVp-p
gm0 = –2IDSS/VGS(off)
gm0 = –2(6 mA)/ –4 V On-off ratio = vout(max)/vout(min)  (Eq.11-23)
gm0 = 3000 μs On-off ratio = 24.55 mVp-p/0 mVp-p
On-off ratio = ∞
VG = [R2/(R1 + R2)]VDD
VG = [10 MΩ/(20 MΩ + 10 MΩ)] 30 V Answer: The output voltage at a VGS of –10 V is 0 mVp-p,
VG = 10 V the output voltage at a VGS of 0 V is 24.55 mVp-p, and the
on-off ratio is ∞.
ID = VG/RS  (Eq.11-7)
ID = 10 V/3.3 kΩ
ID ≅ 3 mA CRITICAL THINKING
From the graph, VGS is roughly –1.25 V when ID = 3 mA. 11-34. Answer:
With Eq. (11-16), gm = 2060 μs. IDSS = 20 mA
VDS(max) = 5 V for the ohmic region
With Eq. (11-21): VDS = 5 to 30 V in the active range
gmrS = (2060 μs)(767 Ω) = 1.58 11-35. Given:
Av = 1.58/(1 + 1.58) = 0.612
VGS(off) = –8 V   (from the graph)
vout = Av(vin) IDSS = 32 mA   (from the graph)
vout = (0.612)(5 mV) VGS(1) = –4 V
vout = 3.06 mV VGS(2) = –2 V
Answer: The output voltage is 3.06 mV. Solution:
11-32. Given: VGS(off) = –2IDSS/gm0  (Eq.11-15)
RD = 22 kΩ gm0 = –2IDSS/VGS(off)
vin = 50 mVp-p gm0 = –2(32 mA)/–8 V
IDSS = 10 mA gm0 = 8000 μs
VP = 2 V
gm = gm0 [1 – (VGS /VGS(off))]  (Eq.11-16)
Solution: gm = 8000 μs[1 – (VGS/–8 V)]
RDS = VP/IDSS  (Eq.11-1) ID = IDSS[1 – (VGS(1)/VGS(off))]2  (Eq.11-3)
RDS = 2 V/10 mA ID = 32 mA[1 – (–4 V/–8 V)]2
RDS = 200 Ω ID = 8 mA
With VGS at –10 V the JFET is cut off and appears as an ID = IDSS[1 – (VGS(2)/VGS(off))]2  (Eq.11-3)
open; thus vout = vin = 50 mVp-p. ID = 32 mA[1 – (–2 V/–8 V)]2
With VGS at 0 V, the JFET is conducting and a voltage ID = 18 mA
divider is created with RD. Answer: The transconductance equation is gm = 8000 μs
vout = [RDS/(RDS + Rin)]vin [1 – (VGS/–8 V)], the drain current at –4 V is 8 mA, and
vout = [200 Ω/(200 Ω + 22 kΩ)]50 mVp-p the drain current at –2 V is 18 mA.
vout = 0.45 mVp-p 11-36. Given:
On-off ratio = vout(max)/vout(min)  (Eq.11-23) VGS(off) = –5 V   (from the graph)
On-off ratio = 50 mVp-p/0.45 mVp-p IDSS = 12 mA   (from the graph)
On-off ratio = 111 VGS = –1 V
Answer: The output voltage at a VGS of –10 V is 50 mVp-p, Solution:
the output voltage at a VGS of 0 V is 0.45 mVp-p, and the
ID = IDSS[1 – (VGS/VGS(off))]2  (Eq.11-3)
on-off ratio is 111.
ID = 12 mA[1 – (–1 V/–5 V)]2
11-33. Given: ID = 7.68 mA
RD = 33 kΩ Answer: The drain current is 7.68 mA.
vin = 25 mVp-p
IDSS = 5 mA 11-37. Given:
VP = 3 V VDD = 15 V
VEE = –10 V
Solution:
RD = 3.3 kΩ
RDS = VP/IDSS  (Eq.11-1) RE = 4.7 kΩ
RDS = 3 V/5 mA VBE = 0.7 V
RDS = 600 Ω gm = 2000 μs
With VGS at –10 V the JFET is cut off and appears as an vg = vin = 3 mV
open; thus vin = 0 mVp-p. Solution:
With VGS at 0 V, the JFET is conducting and a voltage ID = (VEE – VBE)/RE  (Eq.11-13)
divider is created with the output resistance. ID = (10 V – 0.7 V)/4.7 kΩ
ID = 2 mA

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 VD = VDD – IDRD  (Eq.11-4) vd = 357 mV vd = 200 mV
VD = 15 V – (2 mA)(3.3 kΩ) vout = 357 mV vout = 200 mV
VD = 8.4 V
Answer: Open R1.
rd = RD || RL
11-42. Given:
rd = 3.3 kΩ || 15 kΩ
rd = 2.7 kΩ Normal Operation With Trouble
VGS = –1.6 V VGS = –0.6 V
Av = gmrd  (Eq.11-17) ID = 4.8 mA ID = 7.58 mA
Av = (2000 μs)(2.7 kΩ) VDS = 9.6 V VDS = 1.25 V
Av = 5.4 vg = 100 mV vg = 100 mV
vout = Av(vin) vS = 0 V vS = 0 V
vout = (5.4)(3 mV) vd = 357 mV vd = 29 mV
vout = 16.2 mV vout = 357 mV vout = 29 mV
Answer: The drain voltage is 8.4 V, and the output Answer: Open R2.
voltage is 16.2 mV. 11-43. Given:
11-38. Answer: Normal Operation With Trouble
a. Multiply 4 mA and 510 Ω to get 2.04 V. VGS = –1.6 V VGS = –0.56 V
b. It must equal 2.04 V. ID = 4.8 mA ID = 0 mA
c. Because of the linearity of the circuit, the meter reads VDS = 9.6 V VDS = 0 V
half of maximum, or 0.5 mA. vg = 100 mV vg = 100 mV
vS = 0 V vS = 0 V
11-39. Given: vd = 357 mV vd = 0 mV
IDSS = 16 mA vout = 357 mV vout = 0 mV
RDS = 200 Ω
Answer: Open RD.
RL = 10 kΩ
VDD = 30 V 11-44. Given:
Solution: Since VGS is 0 V, it is operating in the active Normal Operation With Trouble
region. The JFET appears to be a current source, but VGS = –1.6 V VGS = –8 V
since the load is so large, the power supply cannot supply ID = 4.8 mA ID = 0 mA
enough voltage to produce that current and it drops into VDS = 9.6 V VDS = 8 V
the ohmic region and the JFET acts like resistor. vg = 100 mV vg = 100 mV
vS = 0 V vS = 0 V
I = VDD/(RDS + RL)
vd = 357 mV vd = 0 mV
I = 30 V/(200 Ω + 10 kΩ)
vout = 357 mV vout = 0 mV
I = 2.94 mA
Answer: Open RS.
VDS = IRDS
VDS = (2.94 mA)(200 Ω) 11-45. Given:
VDS = 0.59 V Normal Operation With Trouble
If the load is shorted, RL = 0 Ω and the JFET operates in VGS = –1.6 V VGS = +8 V
the active region. ID = 4.8 mA ID = 0 mA
VDS = 9.6 V VDS = 24 V
I = IDSS vg = 100 mV vg = 100 mV
I = 16 mA vS = 0 V vS = 0 V
VDS = VDD vd = 357 mV vd = 0 mV
VDS = 30 V vout = 357 mV vout = 0 mV
Answer: During normal operation, the current is 2.94 mA Answer: Open G-S.
and the voltage across the JFET is 0.59 V. With the load 11-46. Given:
shorted, the current is 16 mA and the voltage is 30 V.
Normal Operation With Trouble
11-40. Answer: VGS = –1.6 V VGS = –1.61 V
a. The gm0 is 6000 μs. Multiply this by 1 kΩ to get a ID = 4.8 mA ID = 4.8 mA
voltage gain of 6. VDS = 9.6 V VDS = 9.6 V
b. At –1 V, the gm is 4500 μs and the voltage gain is 4.5. vg = 100 mV vg = 100 mV
c. 3 vS = 0 V vS = 87 V
d. 1.5 vd = 357 mV vd = 40 mV
e. 0.75 vout = 357 mV vout = 40 mV
11-41. Given: Answer: Open Bypass Capacitor.
Normal Operation With Trouble 11-47. Given:
VGS = –1.6 V VGS = –2.75 V Normal Operation With Trouble
ID = 4.8 mA ID = 1.38 mA VGS = –1.6 V VGS = –1.6 V
VDS = 9.6 V VDS = 19.9 V ID = 4.8 mA ID = 4.8 mA
vg = 100 mV vg = 100 mV VDS = 9.6 V VDS = 9.6 V
vS = 0 V vS = 0 V vg = 100 mV vg = 100 mV
vS = 0 V vS = 0 V

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 vd = 357 mV vd = 397 mV Solution:
vout = 357 mV vout = 0 mV ID = IDSS(1 – (VGS/VGS(off)))2
Answer: Open Drain Coupling Capacitor. ID = 4 mA(1 – (–0.5 V/–2.0 V))2
ID = 2.25 mA
11-48. Given:
ID = IDSS(1 – (VGS/VGS(off)))2
Normal Operation With Trouble
ID = 4 mA(1 – (–1 V/–2.0 V))2
VGS = –1.6 V VGS = 0 V
ID = 1 mA
ID = 4.8 mA ID = 7.58 mA
VDS = 9.6 V VDS = 1.5 V ID = IDSS(1 – (VGS/VGS(off)))2
vg = 100 mV vg = 1 mV ID = 4 mA(1 – (–1.5 V/–2.0 V))2
vS = 0 V vS = 0 V ID = 0.25 mA
vd = 357 mV vd = 0 V
Answer:
vout = 357 mV vout = 0 V
VGS = –0.5 V, ID = 2.25 mA
Answer: Open Drain Coupling Capacitor. VGS = –1 V, ID = 1 mA
11-49. R2 is shorted VGS = –1.5 V, ID = 0.25 mA
12-2. Given:
11-50. C2 is open
VGS = –0.5 V
11-51. C3 is shorted VGS = –1.0 V
VGS = –1.5 V
11-52. vg is 1 mVp-p VGS = +0.5 V
VGS = +1.0 V
11-53. Q1 is shorted D-S VGS = +1.5 V
VGS(off) = –2 V
IDSS = 4 mA
Chapter 12  MOSFETs Solution:
SELF-TEST ID = IDSS(1 – (VGS/VGS(off)))2  (Eq. 12-1)
1. c 8. c 15. a 22. b ID = 4 mA(1 – (+0.5 V/–2.0 V))2
2. d 9. b 16. b 23. d ID = 6.25 mA
3. d 10. d 17. d 24. d ID = IDSS(1 – (VGS/VGS(off)))2  (Eq. 12-1)
4. c 11. a 18. d 25. c ID = 4 mA(1 – (+1 V/–2.0 V))2
5. c 12. b 19. c 26. d ID = 9 mA
6. d 13. d 20. d
7. d 14. c 21. a ID = IDSS(1 – (VGS/VGS(off)))2  (Eq. 12-1)
ID = 4 mA(1 – (+1.5 V/–2.0 V))2
ID = 12.25 mA
JOB INTERVIEW QUESTIONS
Answer:
5. MOS technology, especially CMOS, consumes low power
and requires a small space. The result is complex circuits that VGS = 0.5 V, ID = 6.25 mA
are lightweight, will last a long time on batteries, and are VGS = 1 V, ID = 9 mA
suitable for solar power. VGS = 1.5 V, ID = 12.25 mA
9. Because the thin insulating layer within the device is easily 12-3. Given:
destroyed by static electricity.
10. Ship or store the devices in antistatic foam material or wire VGS = –1.0 V
wrap around leads. Also, technicians should be grounded by VGS = –2.0 V
using an antistatic wrist strap, touching the chassis, or stand- VGS = 0 V
ing on antistatic (grounding) mats. Finally, use grounded sol- VGS = +1.5 V
dering irons and test equipment. VGS = +2.5 V
11. MOSFETs have faster switching times, resulting in less time VGS(off) = +3 V
spent in the active region, which produces higher efficiency IDSS = 12 mA
and reduced heat-sink requirements. MOSFETs are also Solution:
immune to thermal runaway and are easily connected in par- ID = IDSS(1 – (VGS/VGS(off)))2  (Eq. 12-1)
allel for greater power dissipation. ID = 4 mA(1 – (+1.5 V/+3.0V))2
ID = 3 mA
PROBLEMS ID = IDSS(1 – (VGS/VGS(off)))2  (Eq. 12-1)
12-1. Given: ID = 4 mA(1 – (2.5 V/+3.0 V))2
VGS = –0.5 V ID = 0.333 mA
VGS = –1.0 V Answer:
VGS = –1.5 V
VGS = 1.5 V, ID = 3 mA
VGS = + 0.5 V
VGS = 2.5 V, ID = 333 μA
VGS = +1.0 V
VGS = +1.5 V
VGS(off) = –2 V
IDSS = 4 mA

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 12-4. Given: Solution:
VGS(off) = –3 V RDS(on) = VDS(on)/ID(on)  (Eq. 12-1)
IDSS = 12 mA RDS(on) = 0.1 V/10 mA
RDS(on) = 10 Ω
Solution:
VDS = VDD – (IDSSRD)  (Eq. 12-2) Answer: The drain-source resistance is 10 Ω.
VDS = 12 V – ((12 mA)(470 Ω)) 12-8b. Given:
VDS = 6.36 V
VDS(on) = 0.25 V
ID = IDSS = 12 mA ID(on) = 45 mA
Answer: The drain current is 12 mA and the drainsource Solution:
voltage is 6.36 V. RDS(on) = VDS(on)/ID(on)  (Eq. 12-1)
12-5. Given: RDS(on) = 0.25 V/45 mA
RDS(on) = 5.56 Ω
gm0 = 4000 μs
RD = 470 Ω Answer: The drain-source resistance is 5.56 Ω.
RL = 2 kΩ
12-8c. Given:
vin = 100 mV
VDS(on) = 0.75 V
Solution: ID(on) = 100 mA
rd = RD || RL
Solution:
rd = 470 Ω || 2 kΩ
rd = 381 Ω RDS(on) = VDS(on)/ID(on)  (Eq. 12-1)
RDS(on) = 0.75 V/100 mA
Av = gmrd RDS(on) = 7.5 Ω
Av = (4000 μs)(381 Ω)
Av = 1.52 Answer: The drain-source resistance is 7.5 Ω.
vout = vinAv 12-8d. Given:
vout = (100 mV)(1.52) VDS(on) = 0.15 V
vout = 152 mV ID(on) = 200 mA
Answer: The voltage gain is 1.52, the voltage out is Solution:
152 mV, and rd is 381 Ω. RDS(on) = VDS(on)/ID(on)  (Eq. 12-1)
12-6. Given: RDS(on) = 0.15 V/200 mA
gm0 = 4000 μs RDS(on) = 0.75 Ω
RD = 680 Ω Answer: The drain-source resistance is 0.75 Ω.
RL = 10 kΩ
vin = 100 mV 12-9a. Given:
VGS(on) = 3 V
Solution: ID(on) = 500 mA
rd = RD || RL RDS(on) = 2 Ω
rd = 680 Ω || 10 kΩ ID(sat) = 25 mA
rd = 637 Ω
Solution:
Av = gmrd VDS = ID(sat)RDS(on)
Av = (4000 μs)(637 Ω) VDS = 25 mA (2 Ω)
Av = 2.55 VDS = 0.05 V
vout = vinAv Answer: The voltage across the E-MOSFET is 0.05 V.
vout = (100 mV)(2.55)
vout = 255 mV 12-9b. Given:
Answer: The voltage gain is 2.55, the voltage out is VGS(on) = 3 V
255 mV, and rd is 637 Ω. ID(on) = 500 mA
RDS(on) = 2 Ω
12-7. Given: ID(sat) = 50 mA
gm0 = 4000 μs Solution:
RD = 680 Ω
RL = 2 kΩ VDS = ID(sat)RDS(on)
Vin = 100 mV VDS = 50 mA (2 Ω)
RG = 1 MΩ VDS = 0.1 V

Solution: Answer: The voltage across the E-MOSFET is 0.1 V.

zin ≈ RG ≈ 1MΩ 12-9c. Given:
Answer: The input impedance is approximately 1 MΩ. VGS(on) = 3 V
ID(on) = 500 mA
12-8a. Given: RDS(on) = 2 Ω
VDS(on) = 0.1 V ID(sat) = 100 mA
ID(on) = 10 mA

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 Solution: Answer: The drain voltage is 0.57 V.
VDS = ID(sat)RDS(on) 12-14. Given:
VDS = 100 mA (2 Ω)
VGS(on) = 5 V   (from Table 12-1)
VDS = 0.2 V
ID(on) = 200 mA   (from Table 12-1)
Answer: The voltage across the E-MOSFET is 0.2 V. RDS(on) = 7.5 Ω   (from Table 12-1)
12-9d. Given: VDD = 30 V
RD = 1 kΩ
VGS(on) = 3 V VLED = 2 V
ID(on) = 500 mA
RDS(on) = 2 Ω Solution:
ID(sat) = 200 mA ID = (VDD – VLED)/(RDS(on) + RD)
Solution: ID = (30 V – 2 V)/(7.5 Ω + 1 kΩ)
ID = 27.8 mA
VDS = ID(sat)RDS(on)
VDS = 200 mA (2 Ω) Answer: The LED current is 27.8 mA.
VDS = 0.4 V 12-15. Given:
Answer: The voltage across the E-MOSFET is 0.4 V. VGS(on) = 2.6 V   (from Table 12-1)
12-10. Given: ID(on) = 20 mA   (from Table 12-1)
RDS(on) = 28 Ω   (from Table 12-1)
VGS(on) = 2.5 V   (from Table 12-1)
VDD = 20 V
ID(on) = 100 mA   (from Table 12-1)
RD = 1 kΩ
RDS(on) = 10 Ω   (from Table 12-1)
VDD = 20 V Solution:
RD = 390 Ω ID = (VDD)/(RDS(on) + RD)
Solution: ID = (20 V)/(28 Ω + 1 kΩ)
VD = [RDS(on)/(RDS(on) + RD)]VDD ID = 19.5 mA
VD = [10 Ω/(10 Ω + 390 Ω)]20 V IL = VDD/RL
VD = 0.5 V IL = 20 V/2 Ω
IL = 10 A
Answer: The voltage across the E-MOSFET is 0.5 V.
12-11. Given: Answer: The MOSFET current is 19.5 mA. The load
current is 10 A.
VGS(on) = 2.6 V   (from Table 12-1)
ID(on) = 20 mA   (from Table 12-1) 12-16. Given:
RDS(on) = 28 Ω   (from Table 12-1) ID(active) = 1 mA
VDD = 15 V VDS(active) = 10 V
RD = 1.8 kΩ
Solution:
Solution:
RD = VDS(active) /ID(active)  (Eq. 12-6)
VD = [RDS(on)/(RDS(on) + RD)]VDD RD = 10 V/1 mA
VD = [28 Ω/(28 Ω + 1.8 kΩ)]15 V RD = 10 kΩ
VD = 0.23 V
Answer: The drain resistance is 10 kΩ.
Answer: The drain voltage is 0.23 V.
12-17. Given:
12-12. Given:
RDS(on) = 300 Ω
VGS(on) = 5 V   (from Table 12-1) VDD = 12 V
ID(on) = 200 mA   (from Table 12-1) RD = 8 kΩ
RDS(on) = 7.5 Ω   (from Table 12-1)
VDD = 25 V Solution: When the input is low, the lower MOSFET is
RD = 150 Ω open and the output voltage is pulled up to the supply
voltage. When the input is high, the lower MOSFET has
Solution: a resistance of 300 Ω.
VD = [RD/(RDS(on) + RD)]VDD vout = [RDS(on)/(RDS(on) + RD)]VDD
VD = [150 Ω/(7.5 Ω + 150 Ω)] 25 V vout = [300 Ω/(300 Ω + 8 kΩ)]12 V
VD = 23.8 V vout = 0.43 V
Answer: The drain voltage is 23.8 V. Answer: When the input voltage is low, the output volt-
12-13. Given: age is 12 V; when the input voltage is high, the output
VGS(on) = 10 V   (from Table 12-1) voltage is 0.43 V.
ID(on) = 1 A   (from Table 12-1) 12-18. Given:
RDS(on) = 0.9 Ω   (from Table 12-1)
RDS(on) = 150 Ω
VDD = 12 V
VDD = 18 V
RD = 18 Ω
RD = 2 kΩ
Solution:
Solution: When the input is low, the lower MOSFET is
VD = [RDS(on)/(RDS(on) + RD)]VDD open and the output voltage is pulled up to the supply
VD = [0.9 Ω/(0.9 Ω + 18 Ω)]12 V voltage. When the input is high, the lower MOSFET has
VD = 0.57 V a resistance of 150 Ω.

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 vout = [RDS(on)/(RDS(on) + RD)]VDD
vout = [150 Ω/(150 Ω + 2 kΩ)]18 V
vout = 1.26 V
Answer: When the input voltage is low, the output volt-
age is 18 V; when the input voltage is high, the output
voltage is 1.26 V.
12-19. Answer: The output waveform is a square wave with an
upper peak of +12 V and a lower peak of 0.43 V.
12-20. Answer: Inverted square wave from +12 V to 0 V.
12-21. Answer: The on MOSFET has an RDS(on) of 10 V divided
by 1 mA, which equals 10 kΩ. The off MOSFET has an
RDS(off) of 10 V divided by 1 μA, which equals 10 MΩ.
When the input voltage is high, the lower MOSFET is on,
and the output voltage is given by:
​  10 kΩ  ​ 
vout = _________ 12 V ≅ 0.012V
10.01 MΩ
When the input voltage is low, the lower MOSFET is off,
and the output voltage is given by:
​  10 MΩ 
vout = _________  ​ 
12 V ≅ 12V
10.01 MΩ
12-22. Given:
12-V peak square-wave input
f  = 1 kHz
Assume the same values from the previous problem.
Answer: The signal will be 180° out of phase and have
a maximum value of 12 V and a minimum value of 0 V.
12-23. Given:
VDD = 12 V
RDS(on) = 5 kΩ
ID = (12 V)/(1.95 Ω + 6 Ω)
ID = 1.51 A
Answer: The current is 1.51 A when the input is high.
12-26. Given:
VGS(on) = 10 V    (from Table 12-2)
ID(on) = 5 A    (from Table 12-2)
RDS(on) = 1.07 Ω    (from Table 12-2)
VDD = 15 V
RD = 3 Ω
Solution: When the input is low, the MOSFET is open
and no current flows. When the input is high, the MOS-
FET has a resistance of RDS(on) = 1.07 Ω.
ID = (VDD)/(RDS(on) + RD)
ID = (15 V)/(1.07 Ω + 3 Ω)
ID = 3.69 A
Answer: The current is 0 A when the input is low, and
3.69 A when the input is high.
12-27. Given:
VGS(on) = 10 V    (from Table 12-2)
ID(on) = 5 A    (from Table 12-2)
RDS(on) = 1.07 Ω    (from Table 12-2)
VDD = 15 V
RD = 5 Ω
Solution: When it is dark, the photodiode acts like an
open and the gate voltage is 10 V. When the input is 10 V,
the MOSFET has a resistance of RDS(on) = 1.07 Ω.
ID = (VDD)/(RDS(on) + RD)
ID = (15 V)/(1.07 Ω + 5 Ω)
ID = 2.47 A
P = (2.47 A)2 (5 Ω) = 30.5 W

Solution: Answer: The power is 30.5 W when it is dark.

ID = VDD/2(RDS(on)) 12.28. Given:
ID = 12 V/2(5 kΩ) VGS(on) = 10 V   (from Table 12-2)
ID = 1.2 mA ID(on) = 2 A   (from Table 12-2)
Answer: The current is 1.2 mA. RDS(on) = 1.95 Ω   (from Table 12-2)
VDD = 24 V
12-24. Given: RD = 12 Ω
VGS(on) = 10 V    (from Table 12-2) Solution: When the input is low, the MOSFET is open
ID(on) = 2 A    (from Table 12-2) and no current flows. When the input is high, the MOS-
RDS(on) = 1.95 Ω    (from Table 12-2) FET has a resistance of RDS(on) = 1.95 Ω.
VDD = 12 V
RD = 10 Ω ID = (VDD)/(RDS(on) + RD)
ID = (24 V)/(1.95 Ω +12 Ω)
Solution: When the input is low, the MOSFET is open ID = 1.72 A
and no current flows. When the input is high, the MOS-
FET has a resistance of RDS(on) = 1.95 Ω. Answer: The current is 0 A when the input is low, and
1.72 A when the input is high.
ID = (VDD)/(RDS(on) + RD)
ID = (12 V)/(1.95 Ω + 10 Ω) 12-29. Given:
ID = 1 A VGS(on) = 10 V   (from Table 12-2)
Answer: The current is 0 A when the input is low, and ID(on) = 2 A   (from Table 12-2)
1 A when the input is high. RDS(on) = 1.95 Ω   (from Table 12-2)
VDD = 12 V
12-25. Given: RD = 18 Ω
VGS(on) = 10 V   (from Table 12-2) Solution: When the probes are underwater, their resis-
ID(on) = 2 A   (from Table 12-2) tance is low and the gate voltage is also low. When the
RDS(on) = 1.95 Ω   (from Table 12-2) input is low, the MOSFET is open and no current flows.
VDD = 12 V When the probes are out of the water, their resistance is
RD = 6 Ω high and the gate voltage is also high. When the input is
Solution: When the input is high, the MOSFET has a high, the MOSFET has a resistance of RDS(on) = 1.95 Ω.
resistance of RDS(on) = 1.95 Ω. ID = (VDD)/(RDS(on) + RD)
ID = (VDD)/(RDS(on) + RD) ID = (12 V)/(1.95 Ω + 18 Ω)
ID = 0.6 A

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 Answer: The current is 0 A when the probes are underwa- RL = 5 Ω
ter, and 0.6 A when the probes are above the water. EN signal = +5 V
12-30. Given: Solution: When the enable signal is high, the output volt-
VGS(on) = 10 V   (from Table 12-2) age across the load is divided between RDS(on) and RL.
ID(on) = 5 A   (from Table 12-2) VL = [RL/(RL + RDS(on))]Vin
RDS(on) = 1.07 Ω   (from Table 12-2) VL = [5 Ω/(5 Ω + 0.1 Ω)]15 V
VDD = 20 V VL = 14.7 V
RD = 4 Ω
Answer: When the enable signal is high, the output volt-
R1 = R2 = 1 MΩ
age is 14.7 V.
C = 20 μF
12-34. Given:
Solution:
Vin = 15 V
τ = RC
Q2 RDS(on) = 0.1 Ω
τ = (1 MΩ || 1 MΩ)(20 μF)
RL = 5 Ω
τ = 10 s
EN signal = +5 V
At full brightness, the FET appears to have a resistance
Solution:
of RDS(on) = 1.07 Ω.
IL = Vin/(RDS(on) + RL)
ID = (VDD)/(RDS(on) + RD) IL = 15 V/(0.1 Ω + 5 Ω)
ID = (20 V)/(1.07 Ω + 4 Ω) IL = 2.94 A
ID = 3.94 A
Q2 PLOSS = (IL)2(RDS(on))
P = I2R Q2 PLOSS = (2.94 A)2(0.1 Ω)
P = (3.94 A)2(4 Ω) Q2 PLOSS = 865 mW
P = 62.1 W
PL = (IL)2(RL)
Answer: The time constant is 10 s, and the lamp power PL = (2.94 A)2(5 Ω)
dissipation at full brightness is 62.1 W. PL = 43.2 W
12-31. Given: Answer: When the enable signal is +5.0 V, Q2's power
VGS(on) = 10 V    (from Table 12-2) loss is 865 mW and the output load power is 43.2 W.
ID(on) = 5 A    (from Table 12-2) 12-35. Given:
RDS(on) = 1.07 Ω    (from Table 12-2)
VDD = 20 V ID(on) = 75 mA
RD = 6 Ω VGS(on) = 4.5 V
R1 = R2 = 2 MΩ VGS(th) = 0.8
C = 20 μF Solution:
Solution: k = IDS(on)/(VGS(on) – VGS(th))2
τ = RC k = 75 mA/(4.5 V – 0.8 V)2
τ = (2 MΩ || 2 MΩ)(20 μF) k = 5.48 × 10–3 A/V2
τ = 20 s ID = k[VGS – VGS(th)]2
ID = 5.48 × 10–3 A/V2[3 – 0.8]2
At full brightness, the FET appears to have a resistance
ID = 26 mA
of RDS(on) = 1.07 Ω.
ID = (VDD)/(RDS(on) + RD) Answer: The value for k is 5.48 × 10–3 A/V2 and the drain
ID = (20 V)/(1.07 Ω + 6 Ω) current is 26 mA.
ID = 2.83 A 12-36. Given:
Answer: The time constant is 20 s, and the lamp current RD = 150 Ω
at full brightness is 2.83 A. RL = 1 kΩ
vin = 50 mV
12-32. Given:
Vin = 15 V Solution:
Q1 RDS(on) = 1 Ω rd = RD || RL
R1 = 10 kΩ rd = 150 Ω || 1 kΩ
EN signal = 0 V and +5 V rd = 130 Ω
Solution: When the input EN is low (0 V), Q1 is off and k = 5.48 × 10–3 A/V2   (from Problem 12-35)
ID = 0 A. When the EN signal is high (+5 V), Q1 is on. gm = 2k[VGS – VGS(th)]
ID = Vin/(R1 + RDS(on)) gm = 24 mS
ID = 15 V/(10 kΩ + 1 Ω) Av = gmrd
ID = 1.5 mA Av = (24 mS)(130 Ω)
Av = 3.14
Answer: The current of Q1 is 0 A when the EN signal is
low and 1.5 mA when the enable signal is high. vout = vgAv
vout = (50 mV)(3.14)
12-33. Given: vout = 157 mV
Vin = 15 V
Answer: The voltage gain is 3.14, the voltage out is
Q2 RDS(on) = 0.1 Ω
157 mV, and gm is 24 mS.

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 12-37. Given: RDS(on) = 0.9 Ω   (from Table 12-1)
RD = 50 Ω VDD = 12 V
ID(on) = 600 mA RD = 18 Ω
VGS(on) = 4.5 V Solution:
VGS(th) = 2.1 V
ID = (VDD)/(RDS(on) + RD)
Solution: ID = (12 V)/(0.9 Ω + 18 Ω)
k = IDS(on)/(VGS(on) – VGS(th))2 ID = 0.635 A
k = 600 mA/(4.5 V – 2.1 V)2 P = ID2 RD
k = 104 × 10–3 A/V2 P = (0.635 A)2(18 Ω)
ID = k[VGS – VGS(th)]2 P = 7.26 W
ID = 104 × 10-3 A/V2[3 – 2.1]2 Pave = P (duty cycle)
ID = 84.4 mA Pave = 7.26 W(0.25)
Answer: The value for k is 104 × 10–3 A/V2 and the drain Pave = 1.81 W
current is 84.4 mA. Answer: The average power dissipation in the load resis-
12-38. Given: tor is 1.81 W.
RD = 15 Ω 12-41. Given:
RL = 1 kΩ VDD = 12 V
vin = 50 mV RDS(on) = 100 Ω
VDD = 12 V RDS(off) = 10 MΩ
Solution: Iave = 50 μA
rd = RD || RL Solution: Since the FETs are complementary, one is off
rd = 15 Ω || 1 kΩ and the other is on. Thus the current drawn from the
rd = 14.8 Ω power supply is going to be controlled by the off device.
Av = gmrd ID = VDD /RDS(off)
Av = (395.8 mS)(14.8 Ω) ID = 12 V/10 MΩ
Av = 5.85 ID = 1.2 μA

vout = VinAv P = VDDID

vout = (50 mV)(5.85) P = (12 V)(1.2 μA)
vout = 292 mV P = 14.4 μW

Answer: The voltage gain is 5.85, the voltage out is P = VDDIave

292 mV, and gm is 395.8 mS. P = (12 V)(50 μA)
P = 600 μW
CRITICAL THINKING Answer: The quiescent power drain is 14.4 μW, and the
average power drain is 600 μW.
12-39. Given:
VGS(on) = 5 V   (from Table 12-1) 12-42. Given:
ID(on) = 200 mA   (from Table 12-1) VG = 3 V
RDS(on) = 7.5 Ω   (from Table 12-1) VDD = 15 V
VDD = 25 V R1 = 1 MΩ
RD = 150 Ω Solution:
f = 1 kHz
VR = VDD – VG
Solution: VR = 15 V – 3 V
ID = (VDD)/(RDS(on) + RD) VR = 12 V
ID = (25 V)/(7.5 Ω + 150 Ω) I = VR/R1
ID = 158.7 mA I = 12 V/1 MΩ
Since the signal is a square wave, the off time equals the I = 12 μA
on time, which gives it a duty cycle of 0.5. The current through R2 is 3 V divided by 2 MΩ, which
Duty cycle = on time/total time equals 1.5 μA. Therefore, the photodiode current is 12 μA
P = ID2 RD minus 1.5 μA, or 10.5 μA.
P = (158.7 mA)2(150 Ω) Answer: The diode current is 10.5 μA.
P = 3.78 W
Pave = P (duty cycle) 12-43. Given: RDS(on) = 0.17 Ω at 25°C.
Pave = 3.78 W(0.5) Solution: As the temperature rises 100°C, the normalized
Pave = 1.89 W resistance increases by a factor of 2.25. Thus 2.25/100°C =
Answer: The average power dissipation in the load resis- 0.0225/°C. The temperature increases 75°C. Thus the resis-
tor is 1.89 W. tance increases by a factor of 75°C(0.0225/°C) = 1.69.

12-40. Given: 0.17(1.69) = 0.29 Ω

VGS(on) = 10 V   (from Table 12-1) Answer: The resistance at 100°C is 0.29 Ω.
ID(on) = 1 A   (from Table 12-1)

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 12-44. Given: 13-2. Given:
Vin = 12 V VD = 0.7 V
Turns ratio = 4:1 VB = 12 V
V = 19 V
Solution: The primary voltage will be 12 V.
R1 = 5 kΩ
N1/N2 = 4
N1/N2 = V1/V2 Solution: Just before breakover, the capacitor voltage is
V2 = V1/(N1/N2) VB.
V2 = 12 V/4 I = (V – VB)/R1
V2 = 3 V I = (19 V – 12 V)/5 kΩ
I = 1.4 mA
Answer: The output voltage is 3 V.
While the diode is conducting, the voltage across it is
12-45. C1 is open 0.7 V.
12-46. VCC has failed and is now 0 V I = (V – VD)/R1
I = (19 V – 0.7 V)/5 kΩ
12-47. Q1 has failed I = 3.66 mA
12-48. VG is set to 5 Vp, not 50 mVp Answer: The current through the resistor just before
breakover is 1.4 mA, and during conduction is 3.66 mA.
12-49. R1 is shorted
13-3. Given:
VD = 0.7 V
Chapter 13  Thyristors VB = 12 V
V = 19 V
SELF-TEST R1 = 5 kΩ
1. c 9. b 17. d 25. d C1 = 0.02 μF
2. b 10. c 18. a 26. d Solution:
3. d 11. a 19. a 27. b RC = (5 kΩ)(0.02 μF)
4. c 12. b 20. b 28. a RC = 0.1 ms
5. b 13. d 21. c 29. c T = 0.1 ms since the period equals the RC time constant
6. b 14. d 22. b 30. b
7. a 15. d 23. c 31. a f = 1/T
8. b 16. d 24. b f = 1/0.1 ms
f = 10 kHz
JOB INTERVIEW QUESTIONS Answer: The RC time constant is 0.1 ms, and the fre-
quency is 10 kHz.
5. The SCR remains latched once the initial stimulus is
removed; the transistor does not. This prevents silencing the 13-4. Given:
alarm by a clever burglar or destruction of the sending unit by VD = 0.7 V
fire or flood, etc. VB = 20 V
6. In every section of the field. IH = 3 mA
7. Power-handling capability: The SCR can handle the most RS = 1 kΩ
current, and the power FET the least current. Efficiency:
The SCR is the most efficient since the control signal can be Solution: Since the diode is open before breakover, no
removed once SCR is conducting, and the power FET is the current flows before the device breaks over. Thus when
next-most efficient since its control current is low. Control the power supply reaches breakover voltage, the device
input: The power FET and BJT are easier to control because will break over.
they can be shut off using the control input. Maximum fre- V = IHRS + 0.7 V   (Eq. 13-2)
quency: The power FET switches the fastest. V = (3 mA)(1 kΩ) + 0.7 V
V = 3.7 V
PROBLEMS Answer: The power supply voltage will be 20 V at break-
over and 3.7 V at dropout.
13-1. Given:
VD = 0.7 V 13-5. Given:
IH = 4 mA VD = 0.7 V
RS = 1 kΩ VB = 12 V
V = 19 V
Solution:
R1 = 10 kΩ
V = IH RS + 0.7 V   (Eq. 13-2) C1 = 0.06 μF
V = (4 mA)(1 kΩ) + 0.7 V
V = 4.7 V Solution: The maximum voltage across the capacitor
will be breakover voltage, because as soon as the device
Answer: The power supply voltage will be 4.7 V at breaks over, the voltage drops to about 0.7 V.
dropout.
RC = (10 kΩ)(0.06 μF)
RC = 0.6 ms
Answer: The maximum voltage across the capacitor is
12 V, and the time constant is 0.6 ms.

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