1N5817, 1N5818, 1N5819

1N5817 and 1N5819 are Preferred Devices

Axial Lead Rectifiers

. . . employing the Schottky Barrier principle in a large area
metal–to–silicon power diode. State–of–the–art geometry features
chrome barrier metal, epitaxial construction with oxide passivation
and metal overlap contact. Ideally suited for use as rectifiers in
low–voltage, high–frequency inverters, free wheeling diodes, and http://onsemi.com
polarity protection diodes.
• Extremely Low VF SCHOTTKY BARRIER
• Low Stored Charge, Majority Carrier Conduction RECTIFIERS
• Low Power Loss/High Efficiency 1.0 AMPERE
Mechanical Characteristics 20, 30 and 40 VOLTS
• Case: Epoxy, Molded
• Weight: 0.4 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
220°C Max. for 10 Seconds, 1/16″ from case
• Shipped in plastic bags, 1000 per bag.
• Available Tape and Reeled, 5000 per reel, by adding a “RL” suffix to
the part number
• Polarity: Cathode Indicated by Polarity Band
• Marking: 1N5817, 1N5818, 1N5819 AXIAL LEAD
CASE 59–04
PLASTIC
MAXIMUM RATINGS
Please See the Table on the Following Page
MARKING DIAGRAM

1N581x

1N581x = Device Code

x = 7, 8 or 9

ORDERING INFORMATION

Device Package Shipping

1N5817 Axial Lead 1000 Units/Bag

1N5817RL Axial Lead 5000/Tape & Reel

1N5818 Axial Lead 1000 Units/Bag

1N5818RL Axial Lead 5000/Tape & Reel

1N5819 Axial Lead 1000 Units/Bag

1N5819RL Axial Lead 5000/Tape & Reel

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 2000 1 Publication Order Number:

October, 2000 – Rev. 4 1N5817/D
 1N5817, 1N5818, 1N5819

MAXIMUM RATINGS
Rating Symbol 1N5817 1N5818 1N5819 Unit
Peak Repetitive Reverse Voltage VRRM 20 30 40 V
Working Peak Reverse Voltage VRWM
DC Blocking Voltage VR
Non–Repetitive Peak Reverse Voltage VRSM 24 36 48 V
RMS Reverse Voltage VR(RMS) 14 21 28 V
Average Rectified Forward Current (Note 1.) IO 1.0 A
(VR(equiv) ≤ 0.2 VR(dc), TL = 90°C,
RθJA = 80°C/W, P.C. Board Mounting, see Note 4., TA = 55°C)
Ambient Temperature (Rated VR(dc), PF(AV) = 0, RθJA = 80°C/W) TA 85 80 75 °C
Non–Repetitive Peak Surge Current IFSM 25 (for one cycle) A
(Surge applied at rated load conditions, half–wave, single phase 60 Hz,
TL = 70°C)
Operating and Storage Junction Temperature Range TJ, Tstg –65 to +125 °C
(Reverse Voltage applied)
Peak Operating Junction Temperature (Forward Current applied) TJ(pk) 150 °C

THERMAL CHARACTERISTICS (Note 1.)

Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RθJA 80 °C/W

ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 1.)

Characteristic Symbol 1N5817 1N5818 1N5819 Unit
Maximum Instantaneous Forward Voltage (Note 2.) (iF = 0.1 A) vF 0.32 0.33 0.34 V
(iF = 1.0 A) 0.45 0.55 0.6
(iF = 3.0 A) 0.75 0.875 0.9
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2.) IR mA
(TL = 25°C) 1.0 1.0 1.0
(TL = 100°C) 10 10 10
1. Lead Temperature reference is cathode lead 1/32″ from case.
2. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.

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 1N5817, 1N5818, 1N5819

NOTE 3. — DETERMINING MAXIMUM RATINGS 125

40 30 23

Reverse power dissipation and the possibility of thermal

TR, REFERENCE TEMPERATURE ( C)

runaway must be considered when operating this rectifier at ° 115
reverse voltages above 0.1 VRWM. Proper derating may be
accomplished by use of equation (1). 105
TA(max) = TJ(max) – RθJAPF(AV) – RθJAPR(AV) (1)
where TA(max) = Maximum allowable ambient temperature RθJA (°C/W) = 110
95
TJ(max) = Maximum allowable junction temperature 80
(125°C or the temperature at which thermal
runaway occurs, whichever is lowest) 60
85
PF(AV) = Average forward power dissipation
PR(AV) = Average reverse power dissipation
RθJA = Junction–to–ambient thermal resistance 75
Figures 1, 2, and 3 permit easier use of equation (1) by 2.0 3.0 4.0 5.0 7.0 10 15 20
VR, DC REVERSE VOLTAGE (VOLTS)
taking reverse power dissipation and thermal runaway into
consideration. The figures solve for a reference temperature Figure 1. Maximum Reference Temperature
as determined by equation (2). 1N5817
TR = TJ(max) – RθJAPR(AV) (2) 125
Substituting equation (2) into equation (1) yields:
40 30 23

TR, REFERENCE TEMPERATURE ( C)

TA(max) = TR – RθJAPF(AV) (3) ° 115
Inspection of equations (2) and (3) reveals that TR is the
ambient temperature at which thermal runaway occurs or
105
where TJ = 125°C, when forward power is zero. The RθJA (°C/W) = 110
transition from one boundary condition to the other is 80
evident on the curves of Figures 1, 2, and 3 as a difference 95 60
in the rate of change of the slope in the vicinity of 115°C. The
data of Figures 1, 2, and 3 is based upon dc conditions. For 85
use in common rectifier circuits, Table 1 indicates suggested
factors for an equivalent dc voltage to use for conservative
design, that is: 75
3.0 4.0 5.0 7.0 10 15 20 30
VR(equiv) = Vin(PK) x F (4) VR, DC REVERSE VOLTAGE (VOLTS)
The factor F is derived by considering the properties of the Figure 2. Maximum Reference Temperature
various rectifier circuits and the reverse characteristics of 1N5818
Schottky diodes.
EXAMPLE: Find TA(max) for 1N5818 operated in a 125
40
12–volt dc supply using a bridge circuit with capacitive filter 30
TR, REFERENCE TEMPERATURE ( C)

such that IDC = 0.4 A (IF(AV) = 0.5 A), I(FM)/I(AV) = 10, Input ° 115 23
Voltage = 10 V(rms), RθJA = 80°C/W.
Step 1. Find VR(equiv). Read F = 0.65 from Table 1,
105 RθJA (°C/W) = 110
Step 1. Find ∴ VR(equiv) = (1.41)(10)(0.65) = 9.2 V.
Step 2. Find TR from Figure 2. Read TR = 109°C 80
Step 1. Find @ VR = 9.2 V and RθJA = 80°C/W. 95
Step 3. Find PF(AV) from Figure 4. **Read PF(AV) = 0.5 W 60
I(FM)
@ = 10 and IF(AV) = 0.5 A. 85
I(AV)
Step 4. Find TA(max) from equation (3).
Step 4. Find TA(max) = 109 – (80) (0.5) = 69°C. 75
4.0 5.0 7.0 10 15 20 30 40
**Values given are for the 1N5818. Power is slightly lower for the VR, DC REVERSE VOLTAGE (VOLTS)
1N5817 because of its lower forward voltage, and higher for the
Figure 3. Maximum Reference Temperature
1N5819.
1N5819
Table 1. Values for Factor F
Circuit Half Wave Full Wave, Bridge Full Wave, Center Tapped*†
Load Resistive Capacitive* Resistive Capacitive Resistive Capacitive
Sine Wave 0.5 1.3 0.5 0.65 1.0 1.3
Square Wave 0.75 1.5 0.75 0.75 1.5 1.5
*Note that VR(PK) ≈ 2.0 Vin(PK). †Use line to center tap voltage for Vin.

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 1N5817, 1N5818, 1N5819

R θ JL, THERMAL RESISTANCE, JUNCTION-TO-LEAD (°C/W)

PF(AV) , AVERAGE POWER DISSIPATION (WATTS)

90 5.0
Sine Wave
BOTH LEADS TO HEATSINK, 3.0 I(FM) = π (Resistive Load)
80
EQUAL LENGTH
2.0 I(AV)

{
70 5
Capacitive
1.0 10
60 Loads dc
MAXIMUM 0.7 20
50 0.5 SQUARE WAVE
TYPICAL
40 0.3 TJ ≈ 125°C
0.2
30
0.1
20
0.07
10 0.05
1 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1.0 0.2 0.4 0.6 0.8 1.0 2.0 4.0
L, LEAD LENGTH (INCHES) IF(AV), AVERAGE FORWARD CURRENT (AMP)

Figure 4. Steady–State Thermal Resistance Figure 5. Forward Power Dissipation

1N5817–19
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0
0.7
0.5
0.3
ZθJL(t) = ZθJL • r(t)
0.2
Ppk Ppk DUTY CYCLE, D = tp/t1
0.1 tp PEAK POWER, Ppk, is peak of an
0.07 TIME equivalent square power pulse.

0.05 t1
∆TJL = Ppk • RθJL [D + (1 - D) • r(t1 + tp) + r(tp) - r(t1)]
where
0.03 ∆TJL = the increase in junction temperature above the lead temperature
r(t) = normalized value of transient thermal resistance at time, t, from Figure 6, i.e.:
0.02 r(t) = r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp.

0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k
t, TIME (ms)

Figure 6. Thermal Response

Mounting Method 1 Mounting Method 3

NOTE 4. — MOUNTING DATA
P.C. Board with P.C. Board with
Data shown for thermal resistance junction–to–ambient
1–1/2″ x 1–1/2″ 1–1/2″ x 1–1/2″
(RθJA) for the mountings shown is to be used as typical guide- copper surface.
copper surface.
line values for preliminary engineering, or in case the tie
point temperature cannot be measured. L = 3/8″
L L

TYPICAL VALUES FOR RθJA IN STILL AIR

Lead Length, L (in)

Mounting
Method 1/8 1/4 1/2 3/4 RθJA BOARD GROUND
Mounting Method 2 PLANE
1 52 65 72 85 °C/W
2 67 80 87 100 °C/W
3 50 °C/W L L

VECTOR PIN MOUNTING

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 1N5817, 1N5818, 1N5819

NOTE 5. — THERMAL CIRCUIT MODEL

(For heat conduction through the leads)

RθS(A) RθL(A) RθJ(A) RθJ(K) RθL(K) RθS(K)

TA(A) PD TA(K)

TL(A) TC(A) TJ TC(K) TL(K)

Use of the above model permits junction to lead thermal re- (Subscripts A and K refer to anode and cathode sides, re-
sistance for any mounting configuration to be found. For a spectively.) Values for thermal resistance components are:
given total lead length, lowest values occur when one side of RθL = 100°C/W/in typically and 120°C/W/in maximum
the rectifier is brought as close as possible to the heatsink. RθJ = 36°C/W typically and 46°C/W maximum.
Terms in the model signify:
TA = Ambient Temperature TC = Case Temperature
TL = Lead Temperature TJ = Junction Temperature
RθS = Thermal Resistance, Heatsink to Ambient
RθL = Thermal Resistance, Lead to Heatsink
RθJ = Thermal Resistance, Junction to Case
PD = Power Dissipation 125
IFSM, PEAK SURGE CURRENT (AMP)

115 1 Cycle
20
TL = 70°C
f = 60 Hz
10
105
7.0
5.0 TC = 100°C 95
i F, INSTANTANEOUS FORWARD CURRENT (AMP)

3.0 85
Surge Applied at
2.0 Rated Load Conditions
25°C 75
1.0 2.0 3.0 5.0 7.0 10 20 30 40 70 100
NUMBER OF CYCLES
1.0
0.7 Figure 8. Maximum Non–Repetitive Surge Current

0.5
30
TJ = 125°C
20
0.3
I R, REVERSE CURRENT (mA)

15
0.2 100°C
5.0
3.0
2.0
0.1 75°C
1.0
0.07
0.5
0.05 0.3 25°C
0.2
0.03 0.1 1N5817
1N5818
0.02 0.05 1N5819
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.03
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0 4.0 8.0 12 16 20 24 28 32 36 40
VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Typical Forward Voltage Figure 9. Typical Reverse Current

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 1N5817, 1N5818, 1N5819

NOTE 6. — HIGH FREQUENCY OPERATION

Since current flow in a Schottky rectifier is the result of 200
majority carrier conduction, it is not subject to junction
diode forward and reverse recovery transients due to minor-
100

C, CAPACITANCE (pF)
ity carrier injection and stored charge. Satisfactory circuit
70 1N5817
analysis work may be performed by using a model consist-
ing of an ideal diode in parallel with a variable capacitance. 1N5818
50
(See Figure 10.) 1N5819
Rectification efficiency measurements show that opera- 30
tion will be satisfactory up to several megahertz. For exam- TJ = 25°C
ple, relative waveform rectification efficiency is approxi- 20 f = 1.0 MHz
mately 70 percent at 2.0 MHz, e.g., the ratio of dc power to
RMS power in the load is 0.28 at this frequency, whereas 10
perfect rectification would yield 0.406 for sine wave inputs. 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40
However, in contrast to ordinary junction diodes, the loss in VR, REVERSE VOLTAGE (VOLTS)
waveform efficiency is not indicative of power loss: it is
Figure 10. Typical Capacitance
simply a result of reverse current flow through the diode ca-
pacitance, which lowers the dc output voltage.

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 1N5817, 1N5818, 1N5819

PACKAGE DIMENSIONS

AXIAL LEAD
PLASTIC
CASE 59–04
ISSUE M

B NOTES:
1. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO-41 OUTLINE SHALL APPLY.
2. POLARITY DENOTED BY CATHODE BAND.
3. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
D
K MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A 5.97 6.60 0.235 0.260
A B 2.79 3.05 0.110 0.120
D 0.76 0.86 0.030 0.034
K 27.94 --- 1.100 ---

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 1N5817, 1N5818, 1N5819

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