Infineon Selection Guide MOSFET OptiMOS and Strong-1952414

OptiMOS™ and StrongIRFET™ MOSFETS
Selection guide 2020
www.infineon.com/powermosfet-12V-300V
20-300 V MOSFETs
Content
OptiMOS™ and StrongIRFET™ 4

20-300 V N-channel power MOSFETs 4
Technology development and product family positioning 4
Guidance for applications and voltage classes 6
Space-saving and high performance packages 7
Discrete and integrated packages 8
Small signal/small power MOSFETs 250-600 V 9
OptiMOS™ and StrongIRFET™ product portfolio 11
Nomenclature 30

OptiMOS™ and StrongIRFET™

20-300 V N-channel power MOSFETs
Infineon’s semiconductors are designed to bring greater efficiency, power density and cost-effectiveness. The full range
of OptiMOS™ and StrongIRFET™ power MOSFETs enables innovation and performance in applications such as switch
mode power supplies (SMPS), battery powered applications, motor control and drives, inverters, and computing.
Infineon’s highly innovative OptiMOS™ and StrongIRFET™ families consistently meet the highest quality and
performance demands in key specifications for power system designs such as on-state resistance (RDS(on)) and
figure of merit (FOM).
OptiMOS™ power MOSFETs provide best-in-class performance. Features include ultralow RDS(on), as well as low charge
for high switching frequency applications. StrongIRFET™ power MOSFETs are designed for drives applications and are
ideal for designs with a low switching frequency, as well as those that require a high current carrying capability.
Technology development and product family positioning
StrongIRFET™ OptiMOS™
Robust and excellent price/performance ratio Best-in-class technology

› Optimized for switching frequency < 100 kHz › Optimized for broad switching frequency
› Designed for industrial applications › Designed for high performance applications
› High current carrying capability › Industry's best figure of merit
› Rugged silicon › High efficiency and power density
Active Active and preferred Active Active and preferred

(Price/performance optimized) (High performance optimized) (Price/performance optimized) (High performance optimized)
OptiMOS™ 3
200/250/300 V
IR MOSFET
100-300 V
OptiMOS™ 5
OptiMOS™ 3 80/100/150 V
80/100/150 V
StrongIRFET™ Gen. 1 OptiMOS™ 3
20-300 V 75/120 V
IR MOSFET OptiMOS™ 6
20-300 V 40 V
OptiMOS™ OptiMOS™ 5
25/30/40/60 V 25/30/40/60 V
For more details on the product,
click on the part number.
4
Infineon's power MOSFET 20-300 V product portfolio is divided into „active and preferred“, referring to the latest
technology available offering best-in-class performance, and „active“, consisting of well-established technologies
which complete this broad portfolio.
OptiMOS™ 6 power MOSFETs 40 V are the newest addition to the OptiMOS™ product family available either in SuperSO8
or PQFN 3.3 x 3.3 packages. This technology is the perfect solution when best-in-class (BiC) products and high
efficiency over a wide range of output power are required. For other voltage classes, from 25 V up to 150 V, OptiMOS™ 5
represents the latest generation in the market, offering either best-in-class (BiC) or price/performance solutions.
For high frequency applications, the product portfolio is complemented by OptiMOS™ 3 power MOSFETs 40/60 V
as standard components. The „active and preferred“ OptiMOS™ 3 power MOSFETs 75/120 V, as well as 200/250/300 V
is the best fit portfolio either in low- or high-frequency applications with a range of products covering from BiC
to standard parts.
StrongIRFET™ is recommended for 20-300 V applications when the BiC performance is not essential and the cost is a
more significant consideration.
5
Guidance for applications and voltage classes
OptiMOS™ and StrongIRFET™ portfolio, covering 20 up to 300 V MOSFETs, can address a broad range of needs from
low- to high-switching frequencies. The tables below provide a guidance on the recommended OptiMOS™ or
StrongIRFET™ products for each major sub-application and voltage class.
20 V 75 V 135 V
Recommended voltage 40 V 60 V 100 V 200 V 250 V 300 V
to 30 V to 80 V to 150 V
Low power OptiMOS™ ✓ ✓ ✓ ✓

Battery powered
Power tools, Mul-

ticopter, Battery,
Industrial Drives StrongIRFET™ ✓ ✓ ✓ ✓
High power OptiMOS™ ✓ ✓ ✓ ✓ ✓

(LEV, LSEV)
StrongIRFET™ ✓ ✓ ✓ ✓ ✓
OptiMOS™ ✓ ✓ ✓ ✓
Solar
StrongIRFET™ ✓ ✓ ✓
slow switching
OptiMOS™ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
Inverters
StrongIRFET™ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
Online UPS
fast switching
OptiMOS™ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
StrongIRFET™ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓
OptiMOS™ ✓ ✓
Offline UPS
StrongIRFET™ ✓ ✓
Adapter / OptiMOS™ ✓ ✓ ✓ ✓
Charger StrongIRFET™ ✓ ✓ ✓ ✓
OptiMOS™ ✓ ✓
PC Power
OptiMOS™ ✓ ✓ ✓
LCD TV
SMPS
OptiMOS™ ✓ ✓ ✓
Server
OptiMOS™ ✓ ✓ ✓ ✓
AC-DC
OptiMOS™ ✓ ✓ ✓ ✓ ✓ ✓
Telecom
StrongIRFET™ ✓ ✓ ✓ ✓ ✓
StrongIRFET™ recommended OptiMOS™ recommended
StrongIRFET™ available OptiMOS™ available

6
Space-saving and high performance packages
TO-247 TO-220 TO-220 FullPAK D2PAK D2PAK 7-pin TO-Leadless
Optimized for high power applications and high current capability

Height [mm] 5.0 4.4 4.5 4.4 4.4 2.3
Outline [mm] 40.15 x 15.9 29.5 x 10.0 29.5 x 10.0 15.0 x 10.0 15.0 x 10.0 11.68 x 9.9
Thermal resistance RthJC [K/W] 2.0 0.5 2.5 0.5 0.5 0.4
SuperSO8 Power Block PQFN 3.3 x 3.3 PQFN 3.3 x 3.3 PQFN 2 x 2 DirectFET™
Source-Down
For highest Significant design High power density For highest Enables significant Best thermal
efficiency and power shrink and performance efficiency and power space saving behavior in a tiny
management management footprint
1.0 1.0 1.0 1.0 0.9 Small: 0.65
Height [mm] Medium: 0.65
Large: 0.71
5.15 x 6.15 5.0 x 6.0 3.3 x 3.3 3.3 x 3.3 2.0 x 2.0 Small: 4.8 x 3.8
Outline [mm] Medium: 6.3 x 4.9
Large: 9.1 x 6.98
Thermal resistance RthJC [K/W] 0.8 1.5 1.4 3.2 11.1 0.5
7
Discrete and integrated packages
OptiMOS™ and StrongIRFET™ technologies are available in different packages to address demands for higher current
carrying capability and significant space saving. The broad portfolio enables footprint reduction, boosted current
rating and optimized thermal performance. While the surface mound leadless devices are enabled for footprint
reduction, through-hole packages are characterized by a high power rating. Furthermore, Infineon offers innovative
packages such as DirectFET™ and TO-Leadless. DirectFET™ is designed for high frequency applications by offering the
lowest parasitic resistance. This package is available in three different sizes: small, medium and large. TO-Leadless is
optimized to dissipate power up to 375 W, increasing power density with a substantial reduction in footprint.
10000
TO-247
TO-220 TO-220 FullPAK
D2PAK I2PAK D2PAK 7-pin
TOLL
1000
Outline [mm2]
DPAK DirectFET™ L-Can

sTOLL
DirectFET™ M-Can SuperSO8

SuperCool
DirectFET™ S-Can
PQFN 3.3x3.3 PQFN 3.3x3.3 Source Down
100
PQFN 2x2
0
0 100 200 300 400 500 600
Power Dissipation [W]
8
Small signal/
small power MOSFETs
Small signal/small power MOSFETs 250-600 V

Combining latest high-performance silicon technology with small and
innovative packaging
Small signal/small power products are ideally suited for space-constrained automotive or non-automotive
applications. By combining the latest high-performance silicon technology with small and innovative packaging,
Infineon’s small signal/small power family offers designers more flexibility when it comes to making their power
MOSFET selection. The products can be found in almost all applications e.g. battery protection, battery charging,
LED lighting, load switches, DC-DC converters, level shifters, low voltage drives and many more.
The entire family includes different packages:

SOT-223, SOT-23, SOT-323, SOT-363, SOT-89, TSOP-6 and SC59
The product portfolio covers N-channel and P-channel enhancement mode MOSFETs as well as N-channel depletion
mode products:
› 20-250 V P-channel enhancement mode (available in single and dual configurations)
› 20-600 V N-channel enhancement mode (available in single and dual configurations)
› -20/20 V and -30/30 V complementary (P + N channel) enhancement mode
› 60-600 V N-channel depletion mode
Key features Key benefits
Most products qualified to AEC Q101 Suitable for automotive and high quality demanding applications
Four VGS(th) classes available for 1.8 V, 2.5 V, 4.5 V, and 10 V gate drives Easy interface to MCU
ESD protected p-channel parts Reduction of design complexity
VDS range from -250 V to 600 V Wide selection of products available
Industry standard small outline packages
RoHS compliant and halogen free Environmentally friendly
600 45 Ω 600 Ω
Small signal/small power MOSFETs
400 22 Ω are available in seven industry-
250 5Ω 15 Ω
240 7.5 Ω 20 Ω
standard package types ranging
200 2.2 Ω 3Ω from the largest SOT-223 to the
150 1.2 Ω
Voltage class [V] ±
smallest SOT-363.
100 235 mΩ 10 Ω
75 180 mΩ
60 60 mΩ 90 Ω
Products are offered in single, dual
55 825 mΩ
40 56 mΩ 112 mΩ and complementary configurations
30 19 mΩ 1Ω
and are suitable for a wide range
25 41 mΩ
20 21 mΩ 3Ω of applications, including battery
12 50 mΩ protection, LED lighting, low voltage
10 mΩ 100 mΩ 1Ω 10 Ω 100 Ω 1000 Ω drives and DC-DC converters.
RDS(on) max. @VGS = 4.5 V [mΩ/Ω]
SOT-363 SOT-323 SOT-23 TSOP-6 SC59 SOT-89 SOT-223
Package outline [mm2] 4.2 4.2 6.96 7.25 8.4 18 45.5
www.infineon.com/smallsignal
9
10
Product portfolio
OptiMOS™ and StrongIRFET™ product portfolio
OptiMOS™ and StrongIRFET™ 20 V (super) logic level

RDS(on) max TO-252 DirectFET™ PQFN 2 x 2 PQFN 3.3 x 3.3 SuperSO8 SO-8
@ VGS=10 V (DPAK)
[mΩ]
IRL6283MTRPBF IRFH6200TRPBF
<1
RDS(on)=0.65 mΩ RDS(on)=0.99 mΩ
IRLHM620TRPBF*** 1) BSC026N02KS G IRF6201TRPBF
RDS(on)=2.5 mΩ RDS(on)=2.6 mΩ RDS(on)=2.45 mΩ
2-4
IRLR6225TRPBF IRL6297SDTRPBF** IRLH6224TRPBF
RDS(on)=4.0 mΩ RDS(on)=3.8 mΩ; dual RDS(on)=3.0 mΩ
BSC046N02KS G IRF3717
4-10
IRLHS6242TRPBF
RDS(on)=11.7 mΩ
> 10
IRLHS6276TRPBF**
RDS(on)=45.0 mΩ; dual
OptiMOS™ and StrongIRFET™ 25 V logic level

RDS(on) max DirectFET™ PQFN 2 x 2 PQFN 3.3 x 3.3 SuperSO8 SO-8
@ VGS=10 V
[mΩ]
IRF6718L2TRPBF IQE006NE2LM5 3) BSC004NE2LS5 2)
BSB008NE2LX IQE006NE2LM5CG 3) BSC009NE2LS5
<1
BSZ009NE2LS5 BSC009NE2LS5I**
IRF6898MTRPBF** BSZ010NE2LS5 BSC010NE2LS
BSB012NE2LXI** BSZ011NE2LS5I BSC010NE2LSI**
IRF6717MTRPBF BSZ011NE2LS5I BSC014NE2LSI**
IRF6894MTRPBF** BSZ013NE2LS5I** IRFH5250D
BSB013NE2LXI** BSZ014NE2LS5IF*** BSC015NE2LS5I**
IRF6797MTRPBF** BSZ017NE2LS5I** BSC018NE2LS
1-2
IRF6716M BSZ018NE2LS BSC018NE2LSI**
IRF6715MTRPBF BSZ018NE2LSI**
IRF6893MTRPBF**
RDS(on)=1.6 mΩ
IRF6892STRPBF**
RDS(on)=1.7 mΩ
IRF6795MTRPBF**
RDS(on)=1.8 mΩ
IRF6714MTRPBF ISK024NE2LM5**** BSZ031NE2LS5 BSC024NE2LS
RDS(on)=2.1 mΩ RDS(on)=2.4 mΩ RDS(on)=3.1 mΩ RDS(on)=2.4 mΩ
BSF030NE2LQ BSZ033NE2LS5 BSC026NE2LS5 IRF8252
RDS(on)=3.0 mΩ RDS(on)=3.3 mΩ RDS(on)=2.6 mΩ RDS(on)=2.7 mΩ
BSF035NE2LQ BSZ036NE2LS BSC032NE2LS
2-4
IRF6811STRPBF** BSZ037NE2LS5****
RDS(on)=3.7 mΩ RDS(on)= 3.7mΩ
BSZ039NE2LS5****
RDS(on) = 3.9 mΩ
IRF6802SD
RDS(on)=4.2 mΩ
IRF6710S2TRPBF IRFHM8228TRPBF BSC050NE2LS
4-10
IRF6712STRPBF BSZ060NE2LS
IRF6810STRPBF** IRFHM8235TRPBF
IRFHS8242
> 10
RDS(on)=13 mΩ
* Optimized for resonant applications (e.g. LLC converter) 1) 2.5 VGS capable For more details on the product,
** Monolithically integrated Schottky-like diode 2) Coming soon click on the part number.
*** RDS(on) max @ VGS=4.5 V 3) Source-Down
****For more information on the product, contact our product support 11
OptiMOS™ and StrongIRFET™ 25/30 V in Power Stage 3x3 and 5x6
Part number Package Monolithically BVDSS [V] RDS(on), max. [ mΩ] @ VGS=4.5 V max. Qg [nC] @ VGS=4.5 V typ.
integrated Schottky
like diode High-side Low-side High-side Low-side
BSZ0910ND PQFN 3x3 – 30 13 13 4.0 4.0
BSZ0909ND PQFN 3x3 – 30 25 25 1.8 1.8
BSC0910NDI SuperSO8 ü 25 5.9 1.6 7.7 25.0
BSC0911ND SuperSO8 – 25 4.8 1.7 7.7 25.0
BSC0921NDI SuperSO8 ü 30 7.0 2.1 5.8 21.0
BSC0923NDI SuperSO8 ü 30 7.0 3.7 5.2 12.2
BSC0924NDI SuperSO8 ü 30 7.0 5.2 5.2 8.6
BSC0925ND SuperSO8 – 30 6.4 6.4 5.2 6.7
BSC0993ND SuperSO8 – 30 7.0 7.0 5.4 6.7
OptiMOS™ and StrongIRFET™ 25/30 V in Power Block 5x6

Part number Package Monolithically BVDSS [V] RDS(on), max. [ mΩ] @ VGS=4.5 V max. Qg [nC] @ VGS=4.5 V typ.
integrated Schottky
like diode High-side Low-side High-side Low-side
BSG0810NDI SuperSO8 ü 25 4.0 1.2 5.6 16.0
BSG0811ND SuperSO8 – 25 4.0 1.1 5.6 20.0
BSG0813NDI SuperSO8 ü 25 4.0 1.7 5.6 12.0
12
Product portfolio

RDS(on), max. TO-252 TO-263 TO-263 TO-220
@ VGS=10 V (DPAK) (D²PAK) (D²PAK 7-pin)
[mΩ]
IPB009N03L G
<1
RDS(on)=0.95 mΩ
IRLS3813TRLPBF IRLB3813PBF
1-2
IRLR8743TRPBF IRFR8314TRPBF IRLB8314PBF
IPD031N03L G IRL3713PBF
2-4
IPB034N03L G IRLB8743PBF
IPD040N03L G IPP034N03L G
IPD050N03L G IPB042N03L G IPP042N03L G
IRLR8726TRPBF IPB055N03L G IRLB8748PBF
IPD060N03L G IPB065N03L G IPP055N03L G
4-10 IPD075N03L G IPB080N03L G IRL8113PBF
IRLR8729TRPBF IRLB8721PBF
IPD090N03L G
RDS(on)=9.0 mΩ
10-25 IPD135N03L G
RDS(on)=13.5 mΩ
IRLR3103
RDS(on)=19.0 mΩ

RDS(on), max. DirectFET™ PQFN 3.3 x 3.3 SuperSO8 TO-Leadless
@ VGS=10 V
[mΩ]
BSC005N03LS5* IPT004N03L
<1
BSC005N03LS5I*
RDS(on)=0.5 mΩ
1-2 ISC011N03L5S
RDS(on)=1.1 mΩ
IRFH8303TRPBF
RDS(on)=1.1 mΩ
BSC011N03LS
RDS(on)=1.1 mΩ
BSC011N03LSI**
RDS(on)=1.1 mΩ
BSC011N03LST***
RDS(on)=1.1 mΩ
IRF8301MTRPBF IRFH8307TRPBF
IRF6726MTRPBF BSZ0500NSI** BSC0500NSI**
IRF6727MTRPBF BSZ019N03LS BSC014N03LS G
IRF8302MTRPBF** ISZ019N03L5S IRFH5301TRPBF
BSZ0901NS ISC019N03L5S
BSZ0501NSI** BSC0901NS
BSC0501NSI**
RDS(on)=1.9 mΩ
BSC0901NSI**
RDS(on)=2.0 mΩ
2-4 ISC026N03L5S
RDS(on)=2.6 mΩ
ISC037N03L5IS
RDS(on)=3.7 mΩ
ISZ040N03L5IS ISC045N03L5S
4-10 ISZ065N03L5S
RDS(on)=6.5 mΩ
* Coming soon For more details on the product,

** Monolithically integrated Schottky-like diode click on the part number.
***For more information on the product, contact our product support
13
Product portfolio

RDS(on), max. DirectFET™ PQFN 3.3 x 3.3 SuperSO8 SO-8 SO-8 PQFN 2 x 2
@VGS=10 V Dual
[mΩ]
IRF8304MTRPBF BSZ0901NSI** BSC020N03LS G ISK036N03LM5 2)
RDS(on)=2.2 mΩ RDS(on)=2.1 mΩ RDS(on)=2.0 mΩ RDS(on)=3.6 mΩ
IRFH5302TRPBF
RDS(on)=2.1 mΩ
IRF6724MTRPBF IRLHM620TRPBF BSC0502NSI**
IRF8306MTRPBF** BSZ0902NS BSC025N03LS G
IRFH5302DTRPBF**
RDS(on)=2.5 mΩ
BSC0902NS
RDS(on)=2.6 mΩ
IRF8252TRPBF
RDS(on)=2.7 mΩ
BSZ0902NSI** BSC0902NSI** IRF8788TRPBF
2-4
BSZ0502NSI** IRFH8316TRPBF
BSC030N03LS G
RDS(on)= 3.0 mΩ
BSZ0503NSI** IRFH8318TRPBF
IRLHM630*** BSC0503NSI** IRF7862TRPBF
RDS(on)= 3.5 mΩ RDS(on)=3.2 mΩ RDS(on)=3.3 mΩ
BSZ035N03LS G BSC034N03LS G IRF8734TRPBF
IRFHM830 BSC0504NSI**
RDS(on)= 3.8 mΩ RDS(on)=3.7 mΩ
BSZ0904NSI** BSC0904NSI**
IRF6722MTRPBF IRFHM830D IRFH8324TRPBF
RDS(on)= 7.7 mΩ RDS(on)= 4.3 mΩ RDS(on)=4.1 mΩ
BSZ0506NS BSC042N03LS G
IRFHM8326TRPBF BSC0906NS
IRFH5304TRPBF
RDS(on)=4.5 mΩ
IRFH8321TRPBF
RDS(on)=4.9 mΩ
BSZ050N03LS G IRFH8325TRPBF IRF8736TRPBF
BSZ058N03LS G BSC050N03LS G
IRFHM8329TRPBF BSC052N03LS
4-10
BSZ065N03LS BSC057N03LS G
IRF8327S IRFHM8330TRPBF IRFH8330TRPBF
BSZ0994NS BSC080N03LS G
RDS(on)= 7.0 mΩ RDS(on)=8.0 mΩ
IRFHM831 IRFH8334TRPBF IRF8721TRPBF
BSZ088N03LS G BSC090N03LS G IRF8714TRPBF
IRFHM8334TRPBF BSC0909NS
BSZ100N03LS G
RDS(on)=10.0 mΩ
BSZ0909NS BSC120N03LS G IRF8707TRPBF IRF7907TRPBF IRLHS6342***
RDS(on)=12.0 mΩ RDS(on)=12.0 mΩ RDS(on)=11.9 mΩ RDS(on)=11.8 mΩ+16.4 mΩ RDS(on)= 16 mΩ
IRFHM8337TRPBF IRFH8337TRPBF IRL6342 1)*** IRF8513TRPBF**** IRFHS8342
RDS(on)=12.4 mΩ RDS(on)=12.8 mΩ RDS(on) = 14.6 mΩ RDS(on)=2.7 mΩ+15.5 mΩ RDS(on)= 16 mΩ
10-63
BSZ130N03LS G IRL6372 1)*** IRF8313TRPBF IRLHS6376***
RDS(on)=13.0 mΩ RDS(on) = 18 mΩ; dual RDS(on)=15.5 mΩ+15.5 mΩ RDS(on)= 63 mΩ; dual
IRFHM8363TRPBF IRF7905TRPBF
RDS(on)=14.9 mΩ RDS(on)=17.1 mΩ+21.8 mΩ
BSC072N03LD G
2 x 7.2
RDS(on)=7.2 mΩ
2 x 15 BSC150N03LD G
RDS(on)=15.0 mΩ
** Monolithically integrated Schottky-like diode 1) 2.5 VGS capable For more details on the product,
*** RDS(on) max @VGS=4.5 V 2) Coming soon click on the part number.
****For more information on the product, contact our product support
14
Product portfolio
OptiMOS™ and StrongIRFET™ 30 V logic level 5 V optimized

RDS(on), max. PQFN 3.3 x 3.3 SuperSO8 SO-8 SO-8
@VGS=10 V Dual
[mΩ]
BSC016N03MS G
RDS(on) =1.6 mΩ
1-2
BSC020N03MS G
RDS(on) =2.0 mΩ
BSC025N03MS G BSO033N03MS G
RDS(on) =2.5 mΩ RDS(on) =3.3 mΩ
2-4
BSZ035N03MS G BSC030N03MS G BSO040N03MS G
RDS(on) =3.5 mΩ RDS(on) =3.0 mΩ RDS(on) =4.0 mΩ
BSC042N03MS G
RDS(on) =4.2 mΩ
BSZ050N03MS G BSC057N03MS G
BSC080N03MS G
RDS(on) =8.0 mΩ
4-10
BSZ100N03MS G
RDS(on) =10.0 mΩ
BSZ130N03MS G BSC120N03MS G BSO110N03MS G BSO150N03MD G
RDS(on) =13.0 mΩ RDS(on) =12.0 mΩ RDS(on) =11.0 mΩ RDS(on) =15.0 mΩ
>10
BSO220N03MD G
RDS(on) =22.0 mΩ
OptiMOS™ and StrongIRFET™ 40 V normal level

RDS(on), max. TO-252 TO-263 TO-263 TO-220 TO-247 DirectFET™ PQFN 3.3 x 3.3 SuperSO8 TO-220 FullPAK
@VGS=10 V (DPAK) (D2PAK) (D2PAK 7-pin)
[mΩ]
IRF40SC240
RDS(on)=0.65 mΩ
<1
IRFS7430TRL7PP
RDS(on) =0.75 mΩ
IRFS7430TRLPBF IRFS7434TRL7PP IRFB7430PBF IRFP7430PBF IRL40DM247 IRFH7084TRPBF
RDS(on) =1.3 mΩ RDS(on) =1.0 mΩ RDS(on) =1.3 mΩ RDS(on) =1.3 mΩ RDS(on) =1.0 mΩ RDS(on) =1.25 mΩ
IPB015N04N G IPB011N04N G IPP015N04N G IRF7739L1TRPBF IRFH7004TRPBF
RDS(on) =1.5 mΩ RDS(on) =1.1 mΩ RDS(on) =1.5 mΩ RDS(on) =1.0 mΩ RDS(on) =1.4 mΩ
IRFS3004 IRFS3004-7P IRFB7434PBF IRF7480MTRPBF BSC017N04NS G
1-2
IRFS7434TRLPBF IRFS7437TRL7PP IRFB3004PBF IRF7946TRPBF IRF40H210
IRFS7437TRLPBF IPB020N04N G IRFB7437PBF BSB015N04NX3 G BSC019N04NS G
IRF40DM229
RDS(on)=1.85 mΩ
IRFR7440TRPBF IRFS7440TRLPBF IPP023N04N G IRF7483MTRPBF IRFH7440TRPBF IPA028N04NM3S
IRFR7446TRPBF IRF1404S IRFB7440PBF IRFH5004TRPBF
RDS(on) =3.9 mΩ RDS(on) =4.0 mΩ RDS(on) =2.5 mΩ RDS(on)=2.6 mΩ
2-4
IRFB7446PBF BSC030N04NS G
IRFH7446TRPBF
RDS(on) =3.3 mΩ
IPP041N04N G BSC054N04NS G IPA041N04N G
RDS(on) =4.1 mΩ RDS(on)=5.4 mΩ RDS(on)=4.1 mΩ
IRF40R207 IRF40B207 IRF40H233
4-10 RDS(on) =5.1 mΩ RDS(on) =4.5 mΩ RDS(on)=5.9 mΩ, dual
IPP048N04N G BSC076N04ND
RDS(on)=4.8 mΩ RDS(on) =7.6 mΩ,
dual
BSZ105N04NS G
RDS(on) =10.5 mΩ
>10
BSZ165N04NS G
RDS(on) =16.5 mΩ
15
Product portfolio

RDS(on), max. TO-252 TO-263 TO-263 TO-220 TO-247 DirectFET™ PQFN 3.3 x 3.3 SuperSO8 TO-Leadless
@VGS=10 V (DPAK) (D2PAK) (D2PAK 7-pin)
[mΩ]
IRL40SC228 IRL7472L1TRPBF BSC007N04LS6 IRL40T209
RDS(on) =0.65 mΩ RDS(on) =0.45 mΩ RDS(on)=0.7 mΩ RDS(on)= 0.8 mΩ
<1
IRL40SC209
RDS(on) =0.8 mΩ
IPB015N04L G IPB011N04L G IRL40B209 IRLP3034PBF BSB014N04LX3 G BSC010N04LS
IRLS3034TRLPBF IRLS3034TRL7P IRLB3034PBF IRL7486MTRPBF BSC010N04LS6
IRL40S212 IRL40B212 BSC010N04LST
RDS(on) =1.9 mΩ RDS(on) =1.9 mΩ RDS(on)=1.0 mΩ
BSC010N04LSI
RDS(on) =1.05 mΩ
BSC010N04LSC*
RDS(on)= 1.05 mΩ
BSC014N04LST
RDS(on) =1.4 mΩ
BSC014N04LS
RDS(on) =1.4 mΩ
BSC014N04LSI
1-2
RDS(on) =1.45 mΩ
ISC015N04NM5
RDS(on) =1.5 mΩ
BSC016N04LS G
RDS(on) =1.6 mΩ
ISC017N04NM5
RDS(on) =1.7 mΩ
BSC018N04LS G
RDS(on) =1.8 mΩ
BSZ018N04LS6 ISC019N04NM5
RDS(on)=1.8 mΩ RDS(on) =1.9 mΩ
BSC019N04LS
RDS(on) =1.9 mΩ
BSC019N04LST
RDS(on) =1.9 mΩ
IRL40B215 IRF6613TRPBF BSZ021N04LS6 BSC022N04LS
RDS(on) =2.7 mΩ RDS(on)=3.4 mΩ RDS(on) =2.1 mΩ RDS(on) =2.2 mΩ
BSZ024N04LS6 BSC022N04LS6
IRLH5034TRPBF
RDS(on)=2.4 mΩ
IPP039N04L G BSZ025N04LS BSC026N04LS
BSZ028N04LS BSC027N04LS G
2-4
ISC028N04NM5
RDS(on) =2.8 mΩ
BSC032N04LS
RDS(on) =3.2 mΩ
IPD036N04L G IRL1404S BSZ034N04LS BSC035N04LS G
RDS(on)=3.6 mΩ RDS(on) =4.0 mΩ RDS(on) =3.4 mΩ RDS(on) =3.5 mΩ
ISC036N04NM5
RDS(on) =3.6 mΩ
ISC046N04NM5
RDS(on) =4.6 mΩ
IRLR3114ZTRPBF IRF6616TRPBF BSZ040N04LS G BSC050N04LS G
ISC058N04NM5
RDS(on) =5.8 mΩ
IRF6614TRPBF BSZ063N04LS6 BSC059N04LS G
4-10 RDS(on)=8.3 mΩ RDS(on) =6.3 mΩ RDS(on) =5.9 mΩ
BSC059N04LS6
RDS(on) =5.9 mΩ
BSC072N04LD
RDS(on)=7.2 mΩ,
dual
BSZ097N04LS G BSC093N04LS G
* Increased creepage distance For more details on the product,
16
Product portfolio

RDS(on), max. TO-252 TO-263 TO-263 TO-262 TO-220 TO-220 TO-247
@VGS=10 V (DPAK) (D2PAK) (D2PAK 7-pin) (I2PAK) FullPAK
[mΩ]
IPB010N06N 2)
RDS(on) =1.0 mΩ
IRF60C241
RDS(on)=1.3 mΩ
IRFS7530TRL7PP
RDS(on) =1.4 mΩ
1-2
IPB014N06N 2)
RDS(on) =1.4 mΩ
IPB017N06N3 G
RDS(on) =1.7 mΩ
IRFS7530TRLPBF IRFS7534TRL7PP 2) IPI020N06N 2) IRFB7530PBF IRFP7530PBF
IPD025N06N 2) IRFS7534TRLPBF IRFS3006TRL7PP IPP020N06N 2)
IRFS3006 IPI024N06N3 G IRFB7534PBF
IPP024N06N3 G 2)
RDS(on) =2.4 mΩ
IPB026N06N 2) IRFB3006PBF IRFP3006PBF
IPB029N06N3 G IPI029N06N 2) IPP029N06N 2) IPA029N06N 2) IRFP3206PBF
IRFB3206BF IPA029N06NM5S
2-4
IPD033N06N 2) IRFS3206 IPI032N06N3 G IPP032N06N3 G IPA032N06N3 G
RDS(on)=3.3 mΩ RDS(on)=3.0 mΩ RDS(on) =3.2 mΩ RDS(on) =3.2 mΩ RDS(on) =3.2 mΩ
IPD034N06N3 G IRFS7537TRLPBF IRFB7537PBF IRFP7537PBF
IRFB3256PBF
RDS(on) =3.4 mΩ
IPD038N06N3 G IPB037N06N3 G IPP040N06N3 G IPA040N06N 2)
IRFS3306 IPI040N06N3 G IPP040N06N 2) IPA040N06N M5S
IRFB3306PBF IRFP3306PBF
IRFR7540TRPBF IRFS7540TRLPBF IRFB7540PBF IPA057N06N3 G
IPD053N06N 2) IPB054N06N3 G IPP057N06N3 G 2)
RDS(on) =5.3 mΩ RDS(on)=5.4 mΩ RDS(on) =5.7 mΩ
IPB057N06N 2) IRFB7545PBF
IRFR7546TRPBF IRF1018ES IPP060N06N 2) IPA060N06N 2)
4-10
IRFR1018E IRFB7546PBF
IRF1018EPBF IPA060N06NM5S
IPD088N06N3 G IRF60B217 IPA093N06N3 G
RDS(on)=8.8 mΩ RDS(on) =9.0 mΩ RDS(on) =9.3 mΩ
IRF60R217 IPB090N06N3 G IPP093N06N3 G
IRFR3806 IRFS3806 IRFB3806PBF
>10
2) 6 V rated (RDS(on) also specified @ VGS=6 V) For more details on the product,
17
Product portfolio

RDS(on), max. DirectFET™ PQFN 3.3 x 3.3 SO-8 SuperSO8 TO-Leadless
@VGS=10 V
[mΩ]
IPT007N06N 2)
<1
RDS(on) =0.7 mΩ
IRF7749L1TRPBF BSC012N06NS IPT012N06N 2)
BSC014N06NS 2)
RDS(on) =1.4 mΩ
BSC014N06NST 2)
RDS(on) =1.45 mΩ
1-2
BSC016N06NST 2)
RDS(on) =1.6 mΩ
BSC016N06NS 2)
RDS(on) =1.6 mΩ
BSC019N06NS 2)
RDS(on) =1.9 mΩ
IRF7748L1TRPBF BSZ039N06NS BSC028N06NS 2)
BSC028N06NST 2)
RDS(on) =2.8 mΩ
BSB028N06NN3 G BSC031N06NS3 G
2-4
IRF60DM206 IRFH7085TRPBF
BSC034N06NS 2)
RDS(on) =3.4 mΩ
IRF7580MTRPBF BSC039N06NS 2)
IRFH5006TRPBF
RDS(on) =4.1 mΩ
IRF6648 BSZ042N06NS 2) IRF7855TRPBF IRLH5036TRPBF
RDS(on) =7.0 mΩ RDS(on) =4.2 mΩ RDS(on)=9.4 mΩ RDS(on) =4.4 mΩ
IRF6674 IRFH7545TRPBF
BSZ068N06NS 2) BSC066N06NS 2)
4-10
BSC076N06NS3 G
RDS(on) =7.6 mΩ
BSZ100N06NS 2) IRF7351TRPBF BSC097N06NS 2)
RDS(on) =10.0 mΩ RDS(on)=17.8 mΩ, dual RDS(on) =9.7 mΩ
BSC097N06NST 2)
RDS(on)=9.7 mΩ
BSZ110N06NS3 G BSC110N06NS3 G
IRFH5406TRPBF
>10
RDS(on)=14.4 mΩ
BSC155N06ND
RDS(on)=15.5 mΩ, dual

RDS(on), max. TO-252 TO-263 TO-263 TO-262 TO-220 PQFN 2 x 2 PQFN 3.3 x 3.3 SuperSO8
@VGS=10 V (DPAK) (D2PAK) (D2PAK 7-pin) (I2PAK)
[mΩ]
IRL60SC216
RDS(on) =1.5 mΩ
IPB019N06L3 G IPB016N06L3 G
1-2 RDS(on) =1.9 mΩ RDS(on) =1.6 mΩ
IRL60S216 IRLS3036TRL7PP IRL60SL216 IRL60B216
IRLS3036TRLPBF IRLB3036PBF BSZ037N06LS5 BSC027N06LS5
2-4 IPD031N06L3 G IPB034N06L3 G IPP037N06L3 G BSC028N06LS3 G
IPD048N06L3 G IPP052N06L3 G BSZ040N06LS5 IRLH5036TRPBF
IRLR3636TRPBF BSZ065N06LS5 BSC065N06LS5
4-10 IPD079N06L3 G IPB081N06L3 G IPI084N06L3 G IPP084N06L3 G BSZ067N06LS3 G BSC067N06LS3 G
BSZ099N06LS5 BSC094N06LS5
BSZ100N06LS3 G BSC100N06LS3 G
>10 IPD220N06L3 G IRL60HS118 BSC112N06LD
RDS(on) =22.0 mΩ RDS(on)=17.0 mΩ RDS(on)=11.2 mΩ, dual
IPD350N06L G
RDS(on) =35.0 mΩ
2) 6 V rated (RDS(on) also specified @ VGS = 6 V) For more details on the product,
18
Product portfolio

RDS(on), max. TO-252 TO-263 TO-263 TO-220 TO-247 DirectFET™ SuperSO8
@VGS=10 V (DPAK) (D²PAK) (D²PAK 7-pin)
[mΩ]
IPB020NE7N3 G IRFS7730TRL7PP IRFP7718PBF
1-2
IRFP4368PBF
RDS(on) =1.85 mΩ
IRFS7730TRLPBF IRFS3107TRL7PP IPP023NE7N3 G IRFP3077PBF IRF7759L2TRPBF
IRFS3107TRLPBF IRFB7730PBF
IPB031NE7N3 G IRFS7734TRL7PP IRFB3077PBF BSC036NE7NS3 G
2-4
IRFS7734TRLPBF IPP034NE7N3 G
IRFB7734PBF
RDS(on) =3.5 mΩ
IRFS3207ZTRLPBF IRFB3207ZPBF
IPB049NE7N3 G IPP052NE7N3 G BSC042NE7NS3 G
IRFS3307ZTRLPBF IRFB3307ZPBF
IRFS7762TRLPBF IPP062NE7N3 G IRF7780MTRPBF IRFH5007TRPBF
4-10
IRFR7740TRPBF IRFB7740PBF
IRFS7787TRLPBF IRFB7787PBF IRFH7787TRPBF
IRFR3607PBF IRFS3607TRLPBF IRFB3607PBF
IRFR7746TRPBF IRFB7746PBF BSF450NE7NH3 1)
>10
OptiMOS™ and StrongIRFET™ 80 V normal level – logic level

RDS(on), max. TO-252 TO-263 TO-263 TO-262 TO-220 TO-220 DirectFET™ PQFN 2 x 2 PQFN 3.3 x 3.3 SuperSO8 TO-Leadless
@VGS=10 V (DPAK) (D²PAK) (D²PAK 7-pin) (I2PAK) FullPAK
[mΩ]
IPB017N08N5 IPB015N08N5 IPT012N08N5
IPB020N08N5 IPB019N08N3 G IPP020N08N5 BSC021N08NS5 IPT019N08N5
1-2
IPB019N08N5
RDS(on) =1.95 mΩ
IPB024N08N5 IPP023N08N5 BSC025N08LS5
IPB025N08N3 G IPB030N08N3 G IPP027N08N5 BSC026N08NS5
IPP028N08N3 G IPA028N08N3 G BSC030N08NS5 IPT029N08N5
2-4
IPB031N08N5 IPP034N08N5 BSC037N08NS5
BSC037N08NS5T
RDS(on)= 3.7 mΩ
IPB035N08N3 G IPI037N08N3 G IPP037N08N3 G IPA037N08N3 G BSC040N08NS5
IPD046N08N5 IPB049N08N5 IPP052N08N5 IPA040N08NM5S BSB044N08NN3 G BSC047N08NS3 G
RDS(on)=4.6 mΩ RDS(on) =4.9 mΩ RDS(on) =5.2 mΩ RDS(on) =4.0 mΩ RDS(on) =4.4 mΩ RDS(on) =4.7 mΩ
IPD053N08N3 G IPB054N08N3 G IPP057N08N3 G IPA052N08NM5S BSC052N08NS5
IPB067N08N3 G IPA057N08N3 G BSZ070N08LS5 BSC057N08NS3 G
4-10
IRF6646TRPBF BSZ075N08NS5 BSC061N08NS5
IPD096N08N3 G IPP100N08N3 G IRF7854TRPBF BSZ084N08NS5 BSC072N08NS5
BSB104N08NP3 G IRL80HS120 BSZ110N08NS5 BSC117N08NS5
IPD135N08N3 G BSZ123N08NS3 G BSC123N08NS3 G
>10
1) DirectFET™ S For more details on the product,
19
Product portfolio

RDS(on), max. TO-252 TO-263 TO-263 TO-262 TO-220 TO-220 TO-247
@VGS=10 V (DPAK) (D²PAK) (D²PAK 7-pin) (I2PAK) FullPAK
[mΩ]
IPB020N10N5 IPB017N10N5 IRF100P218
1-2
IPB020N10N5LF IPB017N10N5LF IRF100P219
IPB027N10N3 G IPB024N10N5 IPP023N10N5 IRFP4468PBF
IPB027N10N5 IPB025N10N3 G IPI030N10N3 G IPP030N10N3 G IPA030N10N3 G
2-4
IPB033N10N5LF IPB032N10N5 IPP030N10N5
IPB039N10N3 G IPP039N10N5
RDS(on) =3.9 mΩ RDS(on)=3.9 mΩ
IPD050N10N5 IPB042N10N3 G IRFS4010TRL7PP IPI045N10N3 G IRF100B201 IPA045N10N3 G IRFP4110PBF
RDS(on)=5.0 mΩ RDS(on) =4.2 mΩ RDS(on) =4.0 mΩ RDS(on) =4.5 mΩ RDS(on) =4.2 mΩ RDS(on) =4.5 mΩ RDS(on) =4.5 mΩ
IPD068N10N3 G IRF100S201 IRFB4110PBF IPA050N10NM5S IRFP4310ZPBF
IRFS4010TRLPBF IPP045N10N3 G
IPB065N10N3 G IRFB4310ZPBF
IRFS4310ZTRLPBF IPI072N10N3 G IPP072N10N3 G IPA083N10N5
4-10
IPD082N10N3 G IPP083N10N5 IPA083N10NM5S
IPB083N10N3 G IPI086N10N3 G IPP086N10N3 G IPA086N10N3 G
IRF100B202
RDS(on) =8.6 mΩ
IRFS4410ZTRLPBF IRFS4410ZTRLPBF
IRFB4410ZPBF
RDS(on) =9.0 mΩ
IPD122N10N3 G
RDS(on) =12.2 mΩ
IPD12CN10N G IPB123N10N3 G
IRFR4510TRPBF IRFS4510TRLPBF IRFB4510PBF IPA126N10NM3S
10-25
IPI180N10N3 G
RDS(on) =18.0 mΩ
IPD25CN10N G
RDS(on) =25.0 mΩ
IPD33CN10N G IRFI4212H-117P
RDS(on) =33.0 mΩ RDS(on) =72.5 mΩ, HB 1)
>25
IPD78CN10N G
RDS(on) =78.0 mΩ
1) HB = Half-bridge For more details on the product,
20
Product portfolio

RDS(on), max. DirectFET™ PQFN 3.3 x 3.3 SuperSO8 SuperSO8 dual cool SO-8 TO-Leadless
@VGS=10 V
[mΩ]
IPT015N10N5
RDS(on) =1.5 mΩ
BSC027N10NS5 IPT020N10N3
1-2
IPT020N10N5
RDS(on) =2.0 mΩ
IRF7769L1TRPBF BSC035N10NS5 BSC040N10NS5SC IPT026N10N5
2-4
BSC040N10NS5
RDS(on) =4.0 mΩ
BSC050N10N5*
RDS(on) =5.0 mΩ
BSB056N10NN3 G BSC060N10NS3 G
BSC070N10NS3 G BSC070N10NS5SC
4-10
BSC070N10NS5
RDS(on) =7.0 mΩ
IRFH5010TRPBF
RDS(on) =9.0 mΩ
BSZ097N10NS5 BSC098N10NS5
BSC100N10NSF G
RDS(on) =10.0 mΩ
IRF6644TRPBF BSC109N10NS3 G
BSC118N10NS G
RDS(on) =11.8 mΩ
IRFH5110TRPBF
RDS(on) =12.4 mΩ
10-25
BSF134N10NJ3 G 1) IRFH7110TRPBF
IRFH5210TRPBF
RDS(on) =14.9 mΩ
IRF6662TRPBF BSC196N10NS G IRF7853TRPBF
IRF6645TRPBF BSZ440N10NS3 G BSC252N10NSF G
>25
IRF7665S2TRPBF BSC440N10NS3 G
IRF6665TRPBF BSC750N10ND G
2 x 75
RDS(on) =63.0 mΩ RDS(on) =75.0 mΩ; dual
IRFHM792TRPBF
2 x 195
RDS(on) =195.0 mΩ, dual

RDS(on), max. TO-252 TO-263 TO-263 TO-220 PQFN 2 x 2 PQFN 3.3 x 3.3 SuperSO8
@VGS=10 V (DPAK) (D2PAK) (D²PAK 7-pin)
[mΩ]
IRLS4030TRL7PP BSC034N10LS5
2-4
IRLS4030TRLPBF IRLB4030PBF BSZ096N10LS5 BSC070N10LS5
4-10
IRLH5030TRPBF
RDS(on)=9.0 mΩ
BSC096N10LS5
RDS(on)=9.6 mΩ
IPP12CN10L G BSZ146N10LS5 BSC123N10LS G
10-25
IRLR3110ZTRPBF BSZ150N10LS3 G BSC146N10LS5
IRL100HS121 BSC265N10LSF G
>25
21
OptiMOS™ and StrongIRFET™ 120 V normal level / logic level
RDS(on), max. TO-252 TO-263 TO-263 TO-262 TO-220 PQFN 3.3 x 3.3 SuperSO8
@VGS=10 V (DPAK) (D2PAK) (D²PAK 7-pin) (I2PAK)
[mΩ]
IPB038N12N3 G IPB036N12N3 G
2-4
IPI041N12N3 G IPP041N12N3 G BSC077N12NS3 G
IPP048N12N3 G BSC080N12LS*
4-10
IPI076N12N3 G IPP076N12N3 G
IPD110N12N3 G IPP114N12N3 G BSC120N12LS*
10-25
IPB144N12N3 G IPI147N12N3 G IPP147N12N3 G BSZ240N12NS3 G BSC190N12NS3 G
* logic level devices For more details on the product,
22
Product portfolio
OptiMOS™ and StrongIRFET™ 135-150 V normal level

RDS(on), max. DirectFET™ PQFN 3.3 x 3.3 SuperSO8 TO-Leadless
@VGS=10 V
[mΩ]
BSC074N15NS5 3) IPT059N15N3
RDS(on) =7.4 mΩ RDS(on) = 5.9 mΩ
4-10
BSC093N15NS5
RDS(on) =9.3 mΩ
IRF7779L2TRPBF 5) BSC110N15NS5
BSC160N15NS5
10-25
RDS(on) =16.0 mΩ
BSB165N15NZ3 G BSC190N15NS3 G
BSB280N15NZ3 G BSZ300N15NS5 BSC360N15NS3 G
IRF6643TRPBF BSZ520N15NS3 G BSC520N15NS3 G
>25
IRF6775MTRPBF BSZ900N15NS3 G
OptiMOS™ and StrongIRFET™ 135-150 V normal level

RDS(on), max. TO-252 TO-263 TO-263 SuperSO8 TO-251 TO-262 TO-220 TO-220 TO-247
@VGS=10 V (DPAK) (D2PAK) (D²PAK 7-pin) (IPAK) (I2PAK) FullPAK
[mΩ]
IPB048N15N5 IPB044N15N5 IPI051N15N5 IPP051N15N5 2) IRF150P220
RDS(on)=4.8 mΩ RDS(on)=4.4 mΩ RDS(on)=5.1 mΩ RDS(on)=5.1 mΩ RDS(on)=2.5mΩ
IPB048N15N5LF IRF135SA204 5) IRF150P221
RDS(on)=4.8 mΩ RDS(on) =5.9 mΩ RDS(on)=4.8mΩ
IPB072N15N3 G IPB060N15N5 BSC074N15NS5 IPI075N15N3 G IPP075N15N3 G IRFP4568PBF
RDS(on) =7.2 mΩ RDS(on)=6.0 mΩ RDS(ON) =7.4 mΩ RDS(on) =7.5 mΩ RDS(on) =7.5 mΩ RDS(on) =5.9 mΩ
IPB073N15N5 IPB065N15N3 G IPI076N15N5 IPP076N15N5 IPA075N15N3 G
4-10
RDS(on)=7.3 mΩ RDS(on) =6.5 mΩ RDS(on)=7.6 mΩ RDS(on)=7.6 mΩ RDS(on) =7.5 mΩ
IPB083N15N5LF
RDS(on)=8.3 mΩ
IRF135S203 5) IRF135B203 5)
IRFB4115PBF
RDS(on) =11.0 mΩ
IPB108N15N3 G IRFS4115TRL7PP IPI111N15N3 G IPP111N15N3 G IPA105N15N3 G
IRFS4321 IRFS4321TRL7PP IRFB4321PBF IRFP4321PBF
10-25
IPD200N15N3 G IPB200N15N3 G IPP200N15N3 G 2)
IRFS4615PBF IRFH5015TRPBF IRFB4615PBF
IRFR4615 IRFS5615PBF IRFU4615PBF IRFB5615PBF
>25
IPD530N15N3 G IPB530N15N3 G IRFH5215TRPBF IPI530N15N3 G 2) IPP530N15N3 G 2)
IRFB4019PBF
RDS(on) =95.0 mΩ
2) 8 V rated (RDS(on) also specified @ VGS = 8 V) For more details on the product,
3) Coming soon click on the part number.
5) 135 V
23
Product portfolio

RDS(on), max. TO-252 TO-263 TO-262 TO-220 TO-220 TO-247
@VGS=10 V (DPAK) (D2PAK) (I2PAK) FullPAK
[mΩ]
IRF200P222
RDS(on)=6.6 mΩ
4-10
IRFP4668PBF
RDS(on) =9.7 mΩ
IPB107N20N3 G IPI110N20N3 G IPP110N20N3 G IRF200P223
IPB107N20NA 4) IPP110N20NA
IPB110N20N3LF IPP120N20NFD IRFP4127PBF
RDS(on)=11.0 mΩ RDS(on) =12.0 mΩ RDS(on) =21.0 mΩ
10-25
IPB117N20NFD IRFB4127PBF IRFP4227PBF
IPB156N22NFD 2)
RDS(on) =15.6 mΩ
IRFS4127TRLPBF
RDS(on) =22.0 mΩ
>25 IRFS4227TRLPBF IRFB4227PBF IPA320N20NM3S
IPD320N20N3 G IPB320N20N3 G IPI320N20N3 G IPP320N20N3 G IRFI4020H-117P
RDS(on) =32.0 mΩ RDS(on) =32.0 mΩ RDS(on) =32.0 mΩ RDS(on) =32.0 mΩ RDS(on) =100 mΩ, HB
IRFB4620PBF
RDS(on) =72.5 mΩ
IRFR4620TRLPBF IRFS4620TRLPBF IRFB5620PBF
IRF200B211
RDS(on) =170.0 mΩ

RDS(on), max. DirectFET™ PQFN 3.3 x 3.3 SuperSO8 SO-8 TO-Leadless
@VGS=10 V
[mΩ]
10-25 BSC220N20NSFD IPT111N20NFD
>25 BSC320N20NS3 G
RDS(on) =32.0 mΩ
BSC350N20NSFD
RDS(on)=35.0 mΩ
BSC500N20NS3G
RDS(on) =50.0 mΩ
IRF6641TRPBF IRFH5020
BSZ900N20NS3 G BSC900N20NS3 G IRF7820TRPBF
IRF6785TRPBF BSZ12DN20NS3 G BSC12DN20NS3 G
BSZ22DN20NS3 G BSC22DN20NS3 G
2) 220 V rated For more details on the product,
4) Part qualified according to AEC Q101 click on the part number.
24
RDS(on), max. TO-252 TO-263 TO-262 TO-220 TO-220 TO-247 PQFN 3.3 x 3.3 SuperSO8 TO-Leadless
@VGS=10 V (DPAK) (D2PAK) (I2PAK) FullPAK
[mΩ]
IPB200N25N3 G IPI200N25N3 G IPP200N25N3 G IRF250P224
IPP220N25NFD IRFP4768PBF IPT210N25NFD
10-25
IRF250P225
RDS(on)=22.0 mΩ
BSC430N25NSFD
RDS(on)=43.0 mΩ
IRFS4229TRLPBF IRFB4332PBF IRFP4332PBF BSC600N25NS3 G
IPD600N25N3 G IPB600N25N3 G IPI600N25N3 G IRFB4229PBF BSC670N25NSFD
>25 RDS(on) =60.0 mΩ RDS(on) =60.0 mΩ RDS(on) =60.0 mΩ RDS(on) =46.0 mΩ RDS(on)=67.0 mΩ
IPP600N25N3 G IPA600N25NM3S IRFP4229PBF BSZ16DN25NS3 G IRFH5025
RDS(on) =60.0 mΩ RDS(on)=60.0 mΩ RDS(on) =46.0 mΩ RDS(on) =165.0 mΩ RDS(on) =100.0 mΩ
BSZ42DN25NS3 G BSC16DN25NS3 G

RDS(on), max. TO-263 TO-220 TO-247 SuperSO8
@ (D2PAK)
VGS=10 V
[mΩ]
IRF300P226
0-25
RDS(on)=19.0 mΩ
IPB407N30N IPP410N30N IRFP4868PBF
IRF300P227
>25
RDS(on)=40.0 mΩ
IRFB4137PBF IRFP4137PBF BSC13DN30NSFD
25
Power MOSFETs complementary
Voltage PQFN 3.3 x 3.3 SO-8
[V]
BSZ15DC02KD H*/**
N: 55 mΩ, 5.1 A
P: 150 mΩ, -3.2 A
-20/20 >50 mΩ
Complementary
BSZ215C H*/**
N: 55 mΩ, 5.1 A
P: 150 mΩ, -3.2 A
BSO612CV G*
N: 0.12 Ω, 3.0 A
P: 0.30 Ω, -2.0 A
-60/60 11-30 Ω
BSO615C G*
N: 0.11 Ω, 3.1 A
P: 0.30 Ω, -2.0 A
www.infineon.com/complementary
*Products are qualified to Automotive AEC Q101 For more details on the product,
**RDS(on) specified at 4.5 V click on the part number.
26
Product portfolio
Power P-channel MOSFETs

Voltage TO-252 TO-263 TO-220 DirectFET™ PQFN 3.3 x 3.3 SuperSO8 SO-8 PQFN 2 x 2
[V] (DPAK) (D2PAK)
BSO201SP H
RDS(on) =7.0 mΩ
BSO203SP H
RDS(on) =21.0 mΩ
BSO203P H
RDS(on) =21.0 mΩ
-20
IRLHS2242TRPBF**
RDS(on) =31.0 mΩ
BSO207P H
RDS(on) =45.0 mΩ
BSO211P H
RDS(on) =67.0 mΩ
BSC030P03NS3 G IRF9310
IPD042P03L3 G BSC060P03NS3E G IRF9317
RDS(on) =4.2 mΩ RDS(on) =6.0 mΩ; ESD RDS(on)=6.6 mΩ
BSZ086P03NS3 G IRF9321
SPD50P03L G 1)* IRF9395M BSZ086P03NS3E G BSO080P03NS 3 G
RDS(on) =7.0 mΩ RDS(on)=7.0 mΩ; dual RDS(on) =8.6 mΩ RDS(on) =8.0 mΩ
BSC084P03NS3 G BSO080P03NS3E G
RDS(on) =8.4 mΩ RDS(on) =8.0 mΩ; ESD
BSC084P03NS3E G BSO080P03S H
RDS(on) =8.4 mΩ; ESD RDS(on) =8.0 mΩ
BSZ120P03NS3 G BSO301SP H
BSZ120P03NS3E G IRF9328
RDS(on) =12.0 mΩ; ESD RDS(on)=11.9 mΩ
IRF9388TRPBF
RDS(on)=11.9 mΩ
BSO130P03S H
-30
RDS(on) =13.0 mΩ
IRF9358
RDS(on)=16 mΩ; dual
IRFHM9331 2) IRF9332
P-channel MOSFETs
RDS(on)=15 mΩ RDS(on)=17.5 mΩ
BSZ180P03NS3 G IRF9333
BSZ180P03NS3E G BSO200P03S H
RDS(on) =18.0 mΩ; ESD RDS(on) =20.0 mΩ
BSO303SP H IRFHS9301TRPBF
BSO303P H
RDS(on) =21.0 mΩ; dual
IRF9362 IRFHS9351TRPBF
RDS(on)=21 mΩ; dual RDS(on) =170.0 mΩ; dual
IRF9335
RDS(on)=59 mΩ
IPD380P06NM IPB110P06LM SPP80P06P H*
RDS(on)= 38 mΩ RDS(on)= 11 mΩ RDS(on) =23.0 mΩ
IPD650P06NM SPB80P06P G*
RDS(on)= 65 mΩ RDS(on) =23.0 mΩ
SPD30P06P G*
RDS(on) =75.0 mΩ
IPD900P06NM
RDS(on) = 90 mΩ
SPD18P06P G* SPB18P06P G* SPP18P06P H* BSO613SPV G*
-60 SPD09P06PL G*
RDS(on) =250.0 mΩ
IPD25DP06LM
RDS(on) = 250 mΩ
IPD25DP06NM
RDS(on) = 250 mΩ
SPD08P06P G* SPP08P06P H*
IPD40DP06NM
RDS(on) = 400 mΩ
SPD15P10PL G* SPP15P10PL H*
SPD15P10P G* SPP15P10P H*
-100 SPD04P10PL G*
RDS(on) =850.0 mΩ
SPD04P10P G*
RDS(on) =1000.0 mΩ
www.infineon.com/pchannel
* Products are qualified to Automotive AEC Q101 1) 5-leg For more details on the product,
**RDS(on) specified at 4.5 V 2) 2.5 VGS capable click on the part number.
27
Product portfolio
Small signal/small power N-channel

Voltage SOT-223 TSOP-6 SOT-89 SC59 SOT-23 SOT-323 SOT-363
[V]
BSR802N IRLML6244* 1)
23 mΩ, 3.7 A, ULL 21 mΩ, 6.3 A, LL
BSL202SN BSR202N IRLML2502* 1)
22 mΩ, 7.5 A, SLL 21 mΩ, 3.8 A, SLL 45 mΩ, 4.2 A, SLL
IRLMS2002* 1) IRLML6246* 1)
30 mΩ, 6.5 A, SLL 46 mΩ, 4.1 A, LL
BSS205N BSD214SN
50 mΩ, 2.5 A, SLL 140 mΩ, 1.5 A, SLL
20 BSS806NE
57 mΩ, 2.3 A, ULL, ESD
BSL806N** BSS806N BSS214NW BSD235N
82 mΩ, 2.3 A, ULL 57 mΩ, 2.3 A, ULL 140 mΩ, 1.5 A, SLL 350 mΩ, 0.95 A, SLL, dual
IRLMS1902* 1) BSS214N BSS816NW BSD840N
100 mΩ, 3.2 A, SLL 140 mΩ, 1.5 A, SLL 160 mΩ, 1.4 A, ULL 400 mΩ, 0.88 A, ULL, dual
IRLML2402* 1)
250 mΩ, 1.2 A, SLL
IRFML8244*
25 24 mΩ, 5.8 A, NL
IRLTS6342* 1) IRLML0030* BSD316SN
17.5 mΩ, 8.3 A, LL 27 mΩ, 5.3 A, LL 160 mΩ, 1.4A, LL
IRFTS8342* IRLML6344* 1)
19 mΩ. 8.2 A, NL 29 mΩ, 5.0 A, LL
BSS306N
57 mΩ, 2.3 A, LL
IRLML6346* 1)
30 63 mΩ, 3.4 A, LL
IRLMS1503* IRLML2030*
100 mΩ, 3.2 A, LL 100 mΩ, 1.4 A, LL
BSS316N
160 mΩ, 1.4 A, LL
IRLML2803*
250 mΩ, 1.2 A, LL
IRLML0040TRPBF*
56 mΩ,3.6 A, LL
55 BSS670S2L BSS340NW
650 mΩ, 0.54 A, LL 400 mΩ, 0.88 A, LL
BSP318S BSL606SN BSS606N IRLML0060* BSS138W 2N7002DW
90 mΩ, 2.6 A, LL 60 mΩ, 4.5 A, LL 60 mΩ, 3.2 A, LL 92 mΩ, 2.7 A, LL 3.5 Ω, 0.28 A, LL 3 Ω, 0.3 A, LL, dual
BSP320S IRLML2060* SN7002W
120 mΩ, 2.9 A, NL 480 mΩ, 1.2 A, LL 5 Ω, 0.23 A, LL
BSP295 BSS138N
N-channel
300 mΩ, 1.8 A, LL 3.5 Ω, 0.23 A, LL

BSS7728N
60 5 Ω, 0.2 A, LL
SN7002N
5 Ω, 0.2 A, LL
2N7002*
3 Ω, 0.3 A, LL
BSS159N
8 Ω, 0.13 A, depl.
BSP716N
75 160 mΩ, 2.3 A, LL
BSP372N IRLML0100*
230 mΩ, 1.8 A, LL 220 mΩ, 1.6 A, LL
BSP373N BSS119N
240 mΩ, 1.8 A, NL 6 Ω, 0.19 A, LL
VGS(th) 1.8 V to 2.3 V
100 BSP296N BSS123N
600 mΩ, 1.2 A, LL 6 Ω, 0.19 A, LL
VGS(th) 0.8 V to 1.8 V
BSS169
12 Ω, 0.09 A, depl.
IRF5802*
150 1.2 mΩ, 0.9 A, NL
BSP297 IRF5801*
1.8 Ω, 0.66 A, LL 2.2 mΩ, 0.6 A, NL
200 BSP149
3.5 Ω,0.14 A, depl.
BSP88 BSS87 BSS131
6 Ω, 0.35 A, 2.8 V rated 6 Ω, 0.26 A, LL 14 Ω, 0.1 A, LL
BSP89
240 6 Ω, 0.35 A, LL
BSP129
6 Ω, 0.05 A, depl.
BSS139
250 30 Ω, 0.03 A, depl.
BSP324
400 25 Ω, 0.17 A, LL
500
BSP125 BSS225 BSS127
45 Ω, 0.12 A, LL 45 Ω, 0.09 A, LL 500 Ω, 0.023 A, LL
600 BSP135 BSS126
60 Ω, 0.02 A, depl. 700 Ω, 0.007 A, depl.
800
All products are qualified to Automotive AEC Q101 (except the parts marked with*) For more details on the product,
1) RDS(on) specified at 4.5 V click on the part number.
** For more information on the product, contact our product support
28
Product portfolio
Small signal/small power P-channel

Voltage SOT-223 TSOP-6 SOT-89 SC59 SOT-23 SOT-323 SOT-363
[V]
BSP317P BSS192P BSR92P
4 Ω, -0.43 A, LL 12 Ω, -0.19 A, LL 11 Ω, -0.14 A, LL
-250
BSP92P
12 Ω, -0.26 A, LL
BSP321P
900 mΩ, -0.98 A, NL
BSP322P
-100
800 mΩ, -1.0 A, LL
BSP316P BSR316P
1.8 Ω, -0.68 A, LL 1.8 Ω, -0.36 A, LL
ISP650P06NM ISS17EP06LM
65 mΩ, -3.7 A, NL 1.7Ω, -0.3 A, LL
ISP12DP06NM BSS83P BSS84PW
125 mΩ, -2.8 A, NL 2 Ω, -0.33 A, LL 8 Ω, -0.15 A, LL
ISP13DP06NMS ISS55EP06LM
125 mΩ, -2.8 A, NL 5.5 Ω, -0.18 A, NL
BSP613P
130 mΩ, 2.9 A, NL
ISP25DP06LM BSS84P
250 mΩ, -1.9 A, LL 8 Ω, -0.17 A, LL
ISP25DP06NM
250 mΩ, -1.9 A, NL
-60 ISP25DP06LMS BSR315P
250 mΩ, -1.9 A, LL 800 mΩ, -0.62 A, LL
ISP26DP06NMS
260 mΩ, -1.9 A, NL
BSP171P
300 mΩ, -1.9 A, LL
BSP170P
300 mΩ, -1.9 A, NL
P-channel MOSFETs
ISP75DP06LM
750 mΩ, -1.1 A, LL
BSP315P
800 mΩ, -1.17 A, LL
IRF5803TRPBF*
-40
112 mΩ, -3.4 A, LL
IRFTS9342TRPBF* IRLML9301TRPBF* BSD314SPE
40 mΩ, -5.8 A, LL 64 mΩ, -3.6 A, LL 140 mΩ, -1.5 A, LL, ESD
BSL307SP BSS308PE
43 mΩ, -5.5 A, LL 80 mΩ, -2.1 A, LL, ESD
BSL308PE IRLML5203TRPBF*
80 mΩ, -2.1 A, LL, 98 mΩ, -3.0 A, LL
dual, ESD
-30 BSS314PE
140 mΩ, -1.5 A, LL, ESD
BSS315P
150 mΩ, -1.5 A, LL
IRLML9303TRPBF*
165 mΩ, -2.3 A, LL
IRLML5103TRPBF*
600 mΩ, -0.76 A, LL
IRLTS2242* 1)
32 mΩ, -6.9 A, SLL
BSL207SP 1) IRLML2244* 1)
41 mΩ, -6 A, SLL 54 mΩ, 4.3 A, LL
IRLMS6802* 1) IRLML6402* 1) BSS209PW 1) BSV236SP 1)
50 mΩ, -5.6 A, SLL 65 mΩ, -3.7 A, SLL 550 mΩ, -0.58 A, SLL 175 mΩ, -1.5 A, SLL
-20
BSL211SP 1) IRLML2246* 1) BSS223PW 1) BSD223P 1)
67 mΩ, -4.7 A, SLL 135 mΩ, 2.6 A, LL 1.2 Ω, -0.39 A, SLL 1.2 Ω, -0.39 A, SLL, dual
IRLMS6702* 1) BSS215P 1)
200 mΩ, -2.4 A, SLL 150 mΩ, -1.5 A, SLL
IRLML6302* 1)
600 mΩ, -0.78 A, SLL
IRLML6401* 1)
-12
50 mΩ, -4.3 A, SLL
Small signal/small power complementary

Voltage TSOP-6 SOT-363
[V]
BSL215C BSD235C
-20/20 N: 140 mΩ, 1.5 A, SLL N: 350 mΩ, 0.95 A, SLL
Complementary
P: 150 mΩ, 1.5 A, SLL P: 1.2 Ω, 0.53 A, SLL

BSL308C
N: 57 mΩ, 2.3 A, LL
P: 80 mΩ, -2.0 A, LL
-30/30
BSL316C
N: 160 mΩ, 1.4 A, LL
P: 150 mΩ, -1.5 A, LL
All products are qualified to Automotive AEC Q101 (except the parts marked with*) For more details on the product,
1) RDS(on) 4.5 V rated click on the part number.
29
StrongIRFET™ nomenclature
Nomenclature
OptiMOS™
BSC 014 N 03 L S X E G
Package type RoHS compliant

BSB = DirectFET™
(M Can) Features
BSC = SuperSO8 F = Fast switching
BSF = DirectFET™ R = Integrated gate
(S Can) resistor
BSK = PQFN 2 x 2 E = ESD protection
BSO = SO-8 A = Qualified according to AEC Q101
BSZ = PQFN 3.3 x 3.3
IPA = FullPAK
SPB/IPB = D2PAK 3 = Technology generation
IPC = Chip product I = Monolithically integrated
SPD/IPD = DPAK Schottky-like diode
IPI = I2PAK FD = Fast diode
SPP/IPP = TO-220 LF = Linear mode capability
IPS = IPAK Short Leads
Package options
IPT = TO-Leadless
SO-8/SuperSO8/PQFN 3.3 x 3.3/PQFN 2 x 2
RDS(on) [mΩ] S = Single chip
Divide by 10 to get RDS(on) D = Dual chip
value e.g. 014 = 1.4 mΩ DirectFET™
X = MX footprint
However, if the sixth character
N = MN footprint
is a C, the fourth and the fifth
Z = MZ footprint
character indicate the RDS(on)
Q = SQ footprint
e.g. 12C = 12 mΩ
T = ST footprint
For chip products chip area
H = SH footprint
in mm2 multiplied by 10
J = SJ footprint
N = N-channel
P = P-channel
C = Complementary Level to be used from VGS
N = Normal level (NL) 10.0
Breakdown voltage [V]
M = Logic level 5 V opt. (LL) 4.5
Multiply by 10 to get
L = Logic level (ELL) 4.5
voltage class e.g. 03 = 30 V
K = Super logic level (SLL) 2.5
E = Extended, +5 V, e.g. E2 = 25 V
J = Ultra logic level (ULL) 1.8
OptiMOS™ 30 V
BSC 0901 N X I
Package type I = Monolithically

integrated
Schottky-like diode
Consecutive number
without any correlation
to product specification D = Dual
E = ESD
S = Single
Channels
N = N-channel
P = P-channel

30
OptiMOS™ nomenclature
Small signal
BSX J1 Y J2 Z
“X” indicates the package Additional features

D = SOT-363 E = ESD protected MOSFET
P = SOT-223
R = SC59
S = SOT-89, SOT-23, SOT-323
L = TSOP-6
3 digits product identifier Only present in following case

meaning dependent on W = to distinguish SOT-323 from SOT-23
product generation
Only present in following case Polarity

S = Single (only for packages which N = N-channel
are also used for multichip products) P = P-channel
C = Complementary
(N-ch + P-ch)
StrongIRFET™ (from May 2015 to 2019)
IR F 135 SA 204
3 sequential digits
3 digits issued sequentially
Package
1 or 2 letters
Drive voltage B = TO-220
F = 4.5 VGS capable for BV ≤ 30 V BA = Super220
L = 2.5 VGS capable for BV ≤ 30 V, 4.5 VGS capable for BV ≥ 40 V C = Bare die or wafer
DL = DirectFET™ 1.5 Large Can
DM = DirectFET™ 1.5 Medium Can
Can DS = DirectFET™ 1.5 Small Can
2 to 3 digit voltage Can FF = TO-220 FullPAK
For example: H = PQFN 5 x 6
25 = 25 V HB = Power Block 5 x 6
135 = 135 V HM = PQFN 3.0 x 3.0 or 3.3 x 3.3
HS = PQFN 2 x 2
I = TO-220 FullPAK
K = SO-8
L = SOT-223
ML = SOT-23
P = TO-247
PS = Super247
R = DPAK
S = D2PAK
SL = TO-262
SA = D2 7-pin with pin 2 void
SN = D2 7-pin with pins void
SC = D2 7-pin with pin 4 void
T = TollFET
TS = TSOP-6
U = IPAK

31
New Nomenclature 2019 onward
New nomenclature for OptiMOS™ and StrongIRFET™ MOSFETs (2019 onward)
I SC 010 N 25 L I
Infineon Features
D = Dual
Package type H = Halfbridge
SC = SuperSO8
SD = SOT-363 M|F… Product brand – family
SL = TSOP-6 (M.. OptiMOS™, F…StrongIRFET™)
SK = PQFN 2x2 3=M arketing generation with
SO = SO-8 branding strategy
SP = SOT-223 CG = Center gate
SQ = CE2 E = ESD protection
SR = SC59 F = Fast switchingFD = Fast diode
SS = SOT-89, SOT-23, SOT-323 SC = Super Cool
ST = sTOLL I=M onolithically integrated
SZ = PQFN 3.3 x 3.3 Schottky like diode
PA = TO-220 FullPAK LF = Linear mode
PB = D²PAK R = Integrated gate resistor
PC = Chip Product
PD = DPAK Last letter: requirement category:
PF = D2PAK-7Pin A = Qualified according to AECQ 101
PI = I²PAK S = Standard
PP = TO-220 None = Industrial
PS = IPAK Short Leads
PT = TO-Leadless Level To be used for VGS
PW = TO-247 N = Normal level (NL) 10.0 V
QA = PQFN 4.5x4 L = Logic level (LL) 4.5 V
QB = PQFN 3x2 M = Logic level 5 V opt. (ELL) 4.5 V
QC = PQFN 3x5 K = Super logic level (SLL) 2.5 V
QD = PQFN 5x6 Source-Down J = Ultra logic level (ULL) 1.8 V
QE = PQFN 3.3 x 3.3 Source-Down
WS = DirectFET™ (S) Breakdown voltage [V]
WM = DirectFET™ (M) Divide by 10
WL = DirectFET™ (L) e.g. E2 = 25 V
10 = 100 V
RDS(on) [mΩ]
25 = 250 V
Divide by 10 to get RDS(on) value
e.g. 012 = 1.2 mΩ
However, if the sixth character

is D or E the fourth and the fifth
characters indicate the RDS(on) e.g.
12D = 120 mΩ
12E = 1200 mΩ
For chip products chip area in
mm2 multiplied by 10
Version
N = N-channel
P = P-channel
C = Complementary
G = GaN

32
Infineon support for low voltage MOSFETs
Useful links and helpful information
Further information, data sheets and documents
www.infineon.com/pchannel
www.infineon.com/depletion
www.infineon.com/complementary
Evaluation boards and simulation models

www.infineon.com/to-leadless-evaluationboard
www.infineon.com/powermosfet-simulationmodels
Simulation

33
Infineon powerful support
Useful links and helpful information
General support Tools, desks and more

www.infineon.com/support www.infineon.com/solutionfinder
www.infineon.com/wheretobuy www.infineon.com/lightdesk
www.infineon.com/quality www.infineon.com/evaluationboards
www.infineon.com/packages www.infineon.com/webinars
www.infineon.com/green
www.infineon.com/opn
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OptiMOS™ and StrongIRFET™ MOSFETS

Selection guide 2020

OptiMOS™ and StrongIRFET™ 4

Small signal/small power MOSFETs 250-600 V 9

OptiMOS™ and StrongIRFET™ product portfolio 11

OptiMOS™ and StrongIRFET™

Technology development and product family positioning

Robust and excellent price/performance ratio Best-in-class technology

Active Active and preferred Active Active and preferred

Guidance for applications and voltage classes

Low power OptiMOS™ ✓ ✓ ✓ ✓

Power tools, Mul-

High power OptiMOS™ ✓ ✓ ✓ ✓ ✓

StrongIRFET™ recommended OptiMOS™ recommended

StrongIRFET™ available OptiMOS™ available

Space-saving and high performance packages

TO-247 TO-220 TO-220 FullPAK D2PAK D2PAK 7-pin TO-Leadless

Optimized for high power applications and high current capability

Discrete and integrated packages

DPAK DirectFET™ L-Can

DirectFET™ M-Can SuperSO8

Small signal/small power MOSFETs 250-600 V

The entire family includes different packages:

SOT-363 SOT-323 SOT-23 TSOP-6 SC59 SOT-89 SOT-223

Package outline [mm2] 4.2 4.2 6.96 7.25 8.4 18 45.5

OptiMOS™ and StrongIRFET™ 20 V (super) logic level

OptiMOS™ and StrongIRFET™ 25 V logic level

OptiMOS™ and StrongIRFET™ 25/30 V in Power Block 5x6

OptiMOS™ and StrongIRFET™ 30 V logic level

OptiMOS™ and StrongIRFET™ 30 V logic level

* Coming soon For more details on the product,

OptiMOS™ and StrongIRFET™ 30 V logic level

OptiMOS™ and StrongIRFET™ 30 V logic level 5 V optimized

OptiMOS™ and StrongIRFET™ 40 V normal level

OptiMOS™ and StrongIRFET™ 40 V logic level

OptiMOS™ and StrongIRFET™ 60 V normal level

OptiMOS™ and StrongIRFET™ 60 V normal level

OptiMOS™ and StrongIRFET™ 60 V logic level

OptiMOS™ and StrongIRFET™ 75 V normal level

OptiMOS™ and StrongIRFET™ 80 V normal level – logic level

OptiMOS™ and StrongIRFET™ 100 V normal level

OptiMOS™ and StrongIRFET™ 100 V normal level

OptiMOS™ and StrongIRFET™ 100 V logic level

OptiMOS™ and StrongIRFET™ 135-150 V normal level

OptiMOS™ and StrongIRFET™ 135-150 V normal level

OptiMOS™ and StrongIRFET™ 200 V normal level

OptiMOS™ and StrongIRFET™ 200 V normal level

OptiMOS™ and StrongIRFET™ 300 V normal level

Power P-channel MOSFETs

Small signal/small power N-channel

300 mΩ, 1.8 A, LL 3.5 Ω, 0.23 A, LL

Small signal/small power P-channel

Small signal/small power complementary

P: 150 mΩ, 1.5 A, SLL P: 1.2 Ω, 0.53 A, SLL

Package type RoHS compliant

Package type I = Monolithically

For more details on the product,

“X” indicates the package Additional features

3 digits product identifier Only present in following case

Only present in following case Polarity

StrongIRFET™ (from May 2015 to 2019)

For more details on the product,

New nomenclature for OptiMOS™ and StrongIRFET™ MOSFETs (2019 onward)

However, if the sixth character