1.

Every known element has

(c) a unique type of atom

2. An atom consists of

(b) one nucleus and one or more electrons

(c) protons, electrons, and neutrons

(d) answers (b) and (c)

3. The nucleus of an atom is made up of

(a) protons and neutrons

4. Valence electrons are

(b) in the most distant orbit from the nucleus

5. A positive ion is formed when

(a) a valence electron breaks away from the atom

6. The most widely used semiconductive material in electronic devices is

(d) silicon

7. The difference between an insulator and a semiconductor is

(a) a wider energy gap between the valence band and the conduction ban
(b) the number of free electrons

(c) the atomic structure

(d) answers(a), (b), and (c)

8. The energy band in which free electrons exist is the

(c) conduction band

9. In a semiconductor crystal, the atoms are held together by

(a) the interaction of valence electrons

(b) forces of attraction

(c) covalent bonds

(d) answers (a), (b), and (c)

10. The atomic number of silicon is

(d) 14

11. The atomic number of germanium is

(d) 32

12. The valence shell in a silicon atom has the number designation of

(d) 3
13. Each atom in a silicon crystal has

(c) eight valence electrons, four of its own and four shared

14. Electron-hole pairs are produced by

(b) thermal energy

15. Recombination is when

(a) an electron falls into a hole

16. The current in a semiconductor is produced by

(d) both electrons and holes

17. In an intrinsic semiconductor,

(b) the free electrons are thermally produced

(d) there are as many electrons as there are holes

(e) answers (b) and (d)

18. The process of adding an impurity to an intrinsic semiconductor is called

(a) doping

19. A trivalent impurity is added to silicon to create

(b) a p-type semiconductor

20. The purpose of a pentavalent impurity is to

(c) increase the number of free electrons

21.The majority carriers in an n-type semiconductor are

(c) conduction electrons

22. Holes in an n-type semiconductor are

(a) minority carriers that are thermally produced

23.A pn junction is formed by

(c) the boundary of a p-type and an n-type material

24. The depletion region is created by

(a) ionization

(b) diffusion

(c) recombination

(d) answers (a), (b), and (c)

25. The depletion region consists of

(b) positive and negative ions

(c) no majority carriers

(d) answers(b) and (c)

26. The term bias means

(c) a dc voltage is applied to control the operation of a device

27. To forward-bias a diode,

(a) an external voltage is applied that is positive at the anode and negative
at the cathode

(c) an external voltage is applied that is positive at the p region and positive
at the n region

(d) answers (a) and (c)

28. When a diode is forward-biased,

(d) the current is produced both holes and electrons

29. Although current is blocked in reverse bias,

(b) there is a very small current due to minority carriers

30. For a silicon diode, the value of the forward-bias voltage typically

(b) must be greater than 0.7 V

31. When forward-biased, a diode

(b) conducts current

32. A diode is normally operated in

(b) the forward-bias region

(c) the reverse-bias region

(d) either (b) or (c)

33. The dynamic resistance can be important when a diode is

(b) forward-biased

34. The V-I curve for a diode shows

(a) the voltage across the diode for a given current

35. Ideally, a diode can be represented by a

(c) switch

36. In the practical diode model,

(a) the barrier potential is taken into account

37. In the complete diode model,

(a) the barrier potential is taken into account

(b) the forward dynamic resistance is taken into account

(c) the reverse resistance is taken into account

(d) all of these

38. When a silicon diode is working properly in forward-bias, a DMM in the
diode test position will indicate

(c) approximately 0.7 V

39. When a silicon diode is open, a DMM will generate indicate

(b) OL