UJIAN AKHIR

SEMESTER 1 SESI 2021/2022

FINAL TEST
SEMESTER 1 SESSION 2021/2022

FEBRUARI/FEBRUARY 2022 MASA/TIME : 2 JAM 30 MINIT/

2 HOURS 30 MINUTES

FAKULTI : FAKULTI SAINS DAN SUMBER ALAM

FACULTY : FACULTY OF SCIENCE AND NATURAL RESOURCES

KOD KURSUS
COURSE CODE : SE40103

TAJUK KURSUS : TEKNOLOGI SEMIKONDUKTOR

COURSE NAME : SEMICONDUCTOR TECHNOLOGY

ARAHAN : JAWAB SEMUA SOALAN

INSTRUCTIONS : ANSWER ALL QUESTIONS

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Kertas ini mengandungi tiga (3) muka surat e-bercetak, tidak termasuk muka surat ini.
This paper consists of three (3) eprinted pages, excluding this page.
SULIT/CONFIDENTIAL

Soalan/ Question 1

Terangkan kesemua langkah yang terlibat dalam memindahkan paten dari mask ke
lapisan fotoperintang di atas wafer silikon.
Explain all steps that involves in transfering pattern from a mask to photoresist layer
on the silicon wafer.
(25 markah/marks)
(CLO2/ C5)

Soalan/Question 2
(a) Bincangkan teknik punaran basah dan hadnya.
Discuss wet etching technique and its limitations.
(7 markah/marks)
(CLO2/C2)

(b) Bezakan di antara teknik punaran kering dan punaran basah.

Diffrentiate between dry etching and wet etching techniques.

(6 markah/marks)
(CLO2/C4)

(c) Dapatkan peratus tak-keseragaman minimum-maksimum (NU%) selepas

dipunar dalam tempoh 120 saat. Diberi ketebalan filem oksida sebelum dan
selepas proses punaran yang telah diukur di empat titik yang berlainan pada
wafer silikon adalah:

Determine the minimum-maximum non-uniformity percentage (NU%) after

being etched in 120 seconds. Given the thickness of film oxide before and after
etching process which measured on four different points on a silicon wafer are:

Ketebalan oksida (sebelum) Å / Thickness of oxide (before) Å :

3000, 3200, 3320, 2990

Ketebalan oksida (selepas) Å / Thickness of oxide (after) Å :

2500, 3000, 2550, 2200

(12 markah/marks)
(CLO2/C4)

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Soalan/ Question 3

(a) Jelaskan proses-proses resapan dalam pendopan semikonduktor.

Describe the diffusion processes in semiconductor doping.

(15 markah/ marks)

(CLO2/C3)

(b) Dapatkan puncak pendop yang terhasil apabila arsenik (As) diimplan ke dalam
silikon dengan sudut condong 70 pada tenaga 123 keV. Diberi dos, julat terunjur
(Rp) dan sisihan piawai (ΔRp) bagi arsenik (As) adalah masing-masing 2.3 x
1014 cm-2 , 0.07 µm dan 0.014 µm.

Determine the peak dopant produced when the arsenic (As) is implanted into
silicon with a tilt angle of 70 at an energy at 123 keV. Given the dose, projected
ranged (Rp) and straggle (ΔRp) of the arsenic (As) are 2.3 x 1014 cm-2 , 0.07
µm, and 0.014 µm, respectively.
(5 markah/marks)
(CLO2/C4)

(c) Kerosakan kekisi daripada implantasi ion dalam silikon disebabkan dos dan
ion yang tinggi boleh mengakibatkan struktur amorfus berhampiran
permukaan silikon substrat. Terangkan satu kaedah untuk membaiki
kerosakan tersebut.
A lattice damage from ion implantation in silicon due to high dose and ion
energy can result an amorphous structure near the substrate surface of
silicon. Elucidate a method to repair that damage.
(5 markah/marks)
(CLO2/C4)

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SULIT/CONFIDENTIAL

Soalan/Question 4

(a) Dengan rajah skematik yang berkaitan, terangkan teknik perlogaman

semikonduktor penyejatan dan percikan magnetron.

With relevant schematic diagram, explain the semiconductor metallization of

thermal evaporation and magnetron sputtering techniques.
(12 markah/marks)
(CLO2/C4)

(b) Justifikasi mengapa kuprum (Cu) digunakan sebagai logam saling sambungan
dalam fabrikasi IC berbanding dengan aluminum (Al).

Justify why copper (Cu) is being used as a metal for interconnections in IC

fabrication rather than the aluminium (Al).
(4 markah/marks)
(CLO2/C2)

(c) Beri tiga contoh bahan aloi dan fungsinya yang biasa digunakan untuk
perlogaman dalam proses BEOL.

Give three examples of alloy materials and its function which are commonly used
for metallization in BEOL process.

(9 markah/marks)
(CLO2/C2)

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