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SKM 300GB124D

Absolute Maximum Ratings  5 26 7.   $ 


)
Symbol Conditions Values Units
IGBT
%.8 1233 %
.  5 26 *6 7. :;3 :33 /
.<
5 1  =33 /
%!8 > 23 %
?   8</  @    =3 AAA B 163 126 7.
% /. 1  A 2633 %
Inverse diode
SEMITRANSTM 3 ,  5 26 ;3 7. 2*3 1;3 /
,<
5 1  =33 /
,
5 13 C  AC ? 5 163 7. 2233 /
Low Loss IGBT Modules
Characteristics  5 26 7.   $ 
)
Symbol Conditions min. typ. max. Units
SKM 300GB124D
IGBT
%!8  %!8 5 %.8 . 5 ; / =6 66 *6 %
.8 %!8 5 3 %.8 5 %.8 ? 5 26 126 7. 32 3* /
%.8  ? 5 26 126 7. 11 11 126 126 %
.8 %!8 5 16 % ? 5 26 126 7. 6 *6 * ; D
%.8   .  5 233 / %!8 5 16 % 
 21 2= 2=6 2;6 %

Features .  )$      1: ,


. %!8 5 3 %.8 5 26 % ) 5 1 'E 2 ,
  
    . 1 1: ,
       #.8 23 '
       <..FB88F A  
5 26 126 7. 3:6 36 D

   !"
   %.. 5 *33 % .  5 233 / G3 
 #$      
 <! 5 <!)) 5 * D ? 5 126 7. *3 
 %& $    $  $  )) %!8 5 > 16 % *33 

  
   ) 66 
 '    
( & ) 8 8)) 2G 2; H
    * +  
# 
) Inverse diode
 %, 5 %8. ,  5 233 /C %!8 5 3 %C ? 5 26 126 2 1; 26 %
 , - ) ./#  7.
   

 (
    %  ? 5 126  7. 11 12 %
0". 0 

 "    ? 5 126  7. 66 D


 & << ,  5 233 /C ? 5 126  7. 123 /
 #   12    I J 5 /JK 26 K.

    23  8 %!8 5 % H
Thermal characteristics
Typical Applications <  ?
 !" 33L6 MJN
 $    )    <  ?0
  0 31; MJN
 /.     <  
   33:; MJN
 4 Mechanical data
    O * : 6 
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$ :26 

GB

1 14-06-2005 SEN © by SEMIKRON


SKM 300GB124D

Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC)

Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)

Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic

2 14-06-2005 SEN © by SEMIKRON


SKM 300GB124D

Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG

Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD
Zthp(j-c) = f (tp); D = tp/tc = tp*f Zthp(j-c) = f (tp); D = tp/tc = tp*f

Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current

3 14-06-2005 SEN © by SEMIKRON


SKM 300GB124D

Fig. 13 Typ. CAL diode recovered charge

UL Recognized Dimensions in mm
File no. E 63 532

!" . 0 6*

. 0 6*

This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.

This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.

4 14-06-2005 SEN © by SEMIKRON

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