BLX14

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:
The ASI BLX14 is Designed for HF PACKAGE STYLE .500 4L STUD (A)
and VHF band applications.
A
.112 x 45°

Ø .630 NOM
FEATURES: C

• PG = 13 dB min. at 15 W/1.6 MHz B C E E

• d3 = -40 dB typ. at 15 W (PEP) B

D

• Omnigold™ Metalization System E

F
1/4-28 UNF-2A
MAXIMUM RATINGS H

IC 4.0 A
VCBO 85 V
DIM MINIMUM MAXIMUM
VEBO 4.0 V inches / mm inches / mm

A .220 / 5.59 .230 / 5.84

VCEO 36 V B
.545 / 13.84
1.050 / 26.67
.555 / 14.10
C
D .495 / 12.57 .505 / 12.83
PDISS 88 W @ TC = 25 °C E .003 / 0.08 .007 / 0.18
F .830 / 21.08
TJ -65 °C to +200 °C G .185 / 4.70 .198 / 5.03
H .497 / 12.62 .530 / 13.46
TSTG -65 °C to +200 °C
θJC 1.99 °C/W

CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 25 mA 85 V
BVCER IC = 25 mA RBE = 5.0 Ω 85 V
BVCEO IC = 50 mA 36 V
BVEBO IE = 10 mA 4.0 V
hFE VCE = 6.0 V IC = 1.4 A 15 100 ---

fT VCE = 20 V IC = 3.0 A 250 MHz

CC VCB = 30 V f = 1.0 MHz 115 125 pF

GP 13 dB
d3 VCE = 28 V ICQ =2.0 A POUT = 15 W (PEP) -40 dB
f = 1.6 MHz

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.