Philips Semiconductors Product specification

Three quadrant triacs BTA204 series B and C

high commutation

GENERAL DESCRIPTION QUICK REFERENCE DATA

Passivated high commutation triacs in SYMBOL PARAMETER MAX. MAX. MAX. UNIT
a plastic envelope intended for use in
circuits where high static and dynamic BTA204- 500B 600B 800B
dV/dt and high dI/dt can occur. These BTA204- 500C 600C 800C
devices will commutate the full rated VDRM Repetitive peak 500 600 800 V
rms current at the maximum rated off-state voltages
junction temperature without the aid of IT(RMS) RMS on-state current 4 4 4 A
a snubber. ITSM Non-repetitive peak on-state 25 25 25 A
current

PINNING - TO220AB PIN CONFIGURATION SYMBOL

PIN DESCRIPTION
tab

1 main terminal 1
T2 T1
2 main terminal 2

3 gate
tab main terminal 2 1 23 G

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
VDRM Repetitive peak off-state - 5001 6001 800 V
voltages
IT(RMS) RMS on-state current full sine wave; - 4 A
Tmb ≤ 107 ˚C
ITSM Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to
surge
t = 20 ms - 25 A
t = 16.7 ms - 27 A
I2t I2t for fusing t = 10 ms - 3.1 A2s
dIT/dt Repetitive rate of rise of ITM = 6 A; IG = 0.2 A; 100 A/µs
on-state current after dIG/dt = 0.2 A/µs
triggering
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms - 0.5 W
period
Tstg Storage temperature -40 150 ˚C
Tj Operating junction - 125 ˚C
temperature

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.

December 1998 1 Rev 1.000

Philips Semiconductors Product specification

Three quadrant triacs BTA204 series B and C

high commutation

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance full cycle - - 3.0 K/W
junction to mounting base half cycle - - 3.7 K/W
Rth j-a Thermal resistance in free air - 60 - K/W
junction to ambient

STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BTA204- ...B ...C
2
IGT Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - - 50 35 mA
T2+ G- - - 50 35 mA
T2- G- - - 50 35 mA
IL Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - - 30 20 mA
T2+ G- - - 45 30 mA
T2- G- - - 30 20 mA
IH Holding current VD = 12 V; IGT = 0.1 A - - 30 20 mA
VT On-state voltage IT = 5 A - 1.4 1.7 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 ˚C
ID Off-state leakage current VD = VDRM(max); Tj = 125 ˚C - 0.1 0.5 mA

DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. UNIT
BTA204- ...B ...C
dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; 1000 1000 - V/µs
off-state voltage exponential waveform; gate open circuit
dIcom/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 4 A; 6 3 - A/ms
commutating current dVcom/dt = 20V/µs; gate open circuit
tgt Gate controlled turn-on ITM = 12 A; VD = VDRM(max); IG = 0.1 A; - - 2 µs
time dIG/dt = 5 A/µs

2 Device does not trigger in the T2-, G+ quadrant.

December 1998 2 Rev 1.000

Philips Semiconductors Product specification

Three quadrant triacs BTA204 series B and C

high commutation

Ptot / W BT136 Tmb(max) / C IT(RMS) / A BT136

8 101 5

7 104 107 C
= 180 4
6 1
107
120
5 110 3
90
60
4 113
30
3 116 2

2 119
1
1 122

0 125 0
0 1 2 3 4 5 -50 0 50 100 150
IT(RMS) / A Tmb / C

Fig.1. Maximum on-state dissipation, Ptot, versus rms Fig.4. Maximum permissible rms current IT(RMS) ,
on-state current, IT(RMS), where α = conduction angle. versus mounting base temperature Tmb.

ITSM / A BT136 IT(RMS) / A BT136

1000 12

IT ITSM
10
T time
8
Tj initial = 25 C max

100 6
dIT /dt limit
4
T2- G+ quadrant

10 0
10us 100us 1ms 10ms 100ms 0.01 0.1 1 10
T/s surge duration / s

Fig.2. Maximum permissible non-repetitive peak Fig.5. Maximum permissible repetitive rms on-state
on-state current ITSM, versus pulse width tp, for current IT(RMS), versus surge duration, for sinusoidal
sinusoidal currents, tp ≤ 20ms. currents, f = 50 Hz; Tmb ≤ 107˚C.

ITSM / A BT136 VGT(Tj)

30 VGT(25 C) BT136
1.6
IT I TSM
25
1.4
T time
20 Tj initial = 25 C max 1.2

15
1

10 0.8

5 0.6

0 0.4
1 10 100 1000 -50 0 50 100 150
Number of cycles at 50Hz Tj / C

Fig.3. Maximum permissible non-repetitive peak Fig.6. Normalised gate trigger voltage
on-state current ITSM, versus number of cycles, for VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
sinusoidal currents, f = 50 Hz.

December 1998 3 Rev 1.000

Philips Semiconductors Product specification

Three quadrant triacs BTA204 series B and C

high commutation

IGT(Tj) IT / A BT136
IGT(25 C) BTA204 12
3 Tj = 125 C
T2+ G+ Tj = 25 C typ max
T2+ G- 10
2.5 Vo = 1.27 V
T2- G- Rs = 0.091 ohms
8
2

1.5 6

1 4

0.5 2

0 0
-50 0 50 100 150 0 0.5 1 1.5 2 2.5 3
Tj / C VT / V

Fig.7. Normalised gate trigger current Fig.10. Typical and maximum on-state characteristic.
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

IL(Tj) Zth j-mb (K/W) BT136

IL(25 C) 10
TRIAC
3 unidirectional

2.5 bidirectional
1
2

1.5

0.1 P tp
D
1

0.5 t

0.01
0 10us 0.1ms 1ms 10ms 0.1s 1s 10s
-50 0 50 100 150
Tj / C tp / s

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), Fig.11. Transient thermal impedance Zth j-mb, versus
versus junction temperature Tj. pulse width tp.

IH(Tj)
IH(25C) TRIAC
3

2.5

1.5

0.5

0
-50 0 50 100 150
Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),

versus junction temperature Tj.

December 1998 4 Rev 1.000

Philips Semiconductors Product specification

Three quadrant triacs BTA204 series B and C

high commutation

MECHANICAL DATA

Dimensions in mm
4,5
Net Mass: 2 g max
10,3
max
1,3
3,7

2,8 5,9
min

15,8
max

3,0 max
3,0
not tinned
13,5
min
1,3
max 1 2 3
(2x) 0,9 max (3x)
0,6
2,54 2,54 2,4

Fig.12. SOT78 (TO220AB). pin 2 connected to mounting base.

Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".

December 1998 5 Rev 1.000

Philips Semiconductors Product specification

Three quadrant triacs BTA204 series B and C

high commutation

DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

December 1998 6 Rev 1.000