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Graphene CVD growth on copper and nickel: role of hydrogen in kinetics
and structure
Maria Losurdo,* Maria Michela Giangregorio, Pio Capezzuto and Giovanni Bruno
Received 19th July 2011, Accepted 27th September 2011
Published on 17 October 2011 on http://pubs.rsc.org | doi:10.1039/C1CP22347J
DOI: 10.1039/c1cp22347j
Understanding the chemical vapor deposition (CVD) kinetics of graphene growth is important for
advancing graphene processing and achieving better control of graphene thickness and properties.
In the perspective of improving large area graphene quality, we have investigated in real-time the
CVD kinetics using CH4–H2 precursors on both polycrystalline copper and nickel. We highlighted
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the role of hydrogen in differentiating the growth kinetics and thickness of graphene on copper
and nickel. Specifically, the growth kinetics and mechanism is framed in the competitive
dissociative chemisorption of H2 and dehydrogenating chemisorption of CH4, and in the
competition of the in-diffusion of carbon and hydrogen, being hydrogen in-diffusion faster in
copper than nickel, while carbon diffusion is faster in nickel than copper. It is shown that
hydrogen acts as an inhibitor for the CH4 dehydrogenation on copper, contributing to suppress
deposition onto the copper substrate, and degrades quality of graphene. Additionally, the
evidence of the role of hydrogen in forming C–H out of plane defects in CVD graphene on Cu is
also provided. Conversely, resurfacing recombination of hydrogen aids CH4 decomposition in
the case of Ni. Understanding better and providing other elements to the kinetics of graphene
growth is helpful to define the optimal CH4/H2 ratio, which ultimately can contribute to
improve graphene layer thickness uniformity even on polycrystalline substrates.
20836 Phys. Chem. Chem. Phys., 2011, 13, 20836–20843 This journal is c the Owner Societies 2011
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CH4 for chemisorption; (ii) atomic H creates sites for hydro- flux. The samples were then cooled at a rate of B2 1C min1 in
carbon and carbon radicals on the surface by subsequent 1 Torr of H2.
H-abstraction reactions, removing hydrogen from the surface; 300 nm Ni/300 nm SiO2/Si and 300 nm Cu/300 nm SiO2/Si
it is generally believed that the main growth species in CVD obtained by sputtering were used as substrates. They were
growth is the CH3 radical, which on the surface undergoes pre-annealed at 400 1C in UHV for nickel and copper oxide
successive hydrogen abstraction by H atoms (see discussion desorption and then heated to 900 1C in 1 Torr of H2 for
below); (iii) hydrogen can passivate defects and grain bound- recrystallization.
aries; (iv) hydrogen can be active in the competition of CHx
deposition/C-etching, and (v) it can play an important role in Real time kinetic characterization: spectroscopic ellipsometry
the C sp3 - sp2 transition. The advantage of the non-destructive and non-intrusive real
Indication of an important role of hydrogen in determining time monitoring exploiting spectroscopic ellipsometry (SE)19 is
the graphene growth kinetics and in limiting the graphene that it can be applied to detect a few monolayers of graphene
thickness to a monolayer comes from previous observations
Published on 17 October 2011 on http://pubs.rsc.org | doi:10.1039/C1CP22347J
ness of the CH4 dehydrogenation reaction on the Cu and Ni which were exploited in the present study to monitor, for the
catalysts, since addition of Cu to a Ni surface increases the first time, the graphene growth kinetics.
activation energy barrier, Eact, of the reaction CH4 - CH3 + H Spectroscopic ellipsometry19 monitored in real-time the
by 1.3 times, and Eact for the reaction CH - C + H by 1.8 times growth by directly recording the pseudodielectric function
than that of pure Ni(111).18 hei = he1i + ihe2i of the metal catalyst as well as of graphene
Therefore, carbon atoms coexist with hydrogen atoms on layers, which is related to the extinction coefficient hki and
the surface of Ni and Cu catalysts, and consequently their refractive index hni of materials by the following equation
mutual interaction may change the adsorption and diffusion " #
properties of carbon atoms. Thus, a potential role of hydrogen ð1 rÞ2
hei ¼ he1 i þ ihe2 i ¼ sin2 f 1 þ tan2 f ¼ hðn þ ikÞ2 i
in determining the graphene growth mechanism and kinetics ð1 þ rÞ2
on Cu and Ni has also to be clarified to gain useful information
on the optimal CH4–H2 ratio to improve graphene deposition. where f is the angle of incidence fixed at 701 and r is the
Here we report on fundamental insight into the role of complex reflection coefficient for the parallel, p, and perpendi-
hydrogen in graphene CVD growth kinetics on Ni and Cu cular, s, polarizations, defined as
monitored for the first time in real-time during graphene rp
deposition. We demonstrate the competition between carbon r¼ ¼ tan CeiD
rs
diffusion and hydrogen diffusion, occurring differently for Ni
and Cu, and the competitive role of H2 dissociative chemi- where tan C represents the change of amplitude of the reflected
sorption and CH4 dehydrogenating chemisorption, which polarized light beam with respect to the linearly polarized
affect the carbon uptake and, hence, the graphene growth incident beam, while the phase change between the two polari-
and thickness on the two catalytic substrates. The different zations is related to cos D. rp and rs are the Fresnel reflection
interaction and recombination of hydrogen on Cu and Ni coefficients. In the kinetic mode, ellipsometric spectra were
determining the different active carbon precursor for graphene acquired every 1 s using a phase-modulated spectroscopic
on the two metals is highlighted. We also report Raman mea- ellipsometer (UVISEL, Horiba Jobin Yvon) in the 0.75–6.5 eV
surements of how the hydrogen dilution affects the graphene spectral range with a 0.01 eV resolution.
quality. Understanding better and providing other elements to Here, the kinetic data are shown at the probing photon
the kinetics of graphene growth is helpful to define the optimal energy of 4.2 eV, because this energy is close to the interband
CH4/H2 ratio, which ultimately can contribute to improve transition of nickel, which has a main absorption peak above
graphene layer thickness uniformity even on polycrystalline 4 eV due to transitions from the lowest d-band to a free-
substrates. electron-like band along all the three directions (L, D and S in
the Brillouin zone22) of copper, which also has two main
interband transitions above 4 eV,23 and graphene, which
Experimental shows an absorption peak at 4.6 eV due to a van Hove
singularity in the graphene density of states.20,21
Graphene deposition
Graphene characterization: Raman spectroscopy
Graphene was grown by chemical vapor deposition (CVD)
from mixtures of CH4 : H2 = 100 : 0–50 sccm gases at a Raman spectroscopy has shown to be a powerful tool to assess
temperature of 900 1C and at a total pressure of 4 Torr in a thickness and quality of graphene layers.24 Raman spectra
stainless-steel CVD reactor. Ar was also used as diluents to were then collected using a LabRAM HR Horiba-Jobin Yvon
keep the CH4 partial pressure constant, when varying the H2 spectrometer with the 532 nm excitation under ambient conditions
This journal is c the Owner Societies 2011 Phys. Chem. Chem. Phys., 2011, 13, 20836–20843 20837
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H(s) + H(s) - H2m + 2s (highly favored for Ni, not for Cu)
(1)
20838 Phys. Chem. Chem. Phys., 2011, 13, 20836–20843 This journal is c the Owner Societies 2011
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Published on 17 October 2011 on http://pubs.rsc.org | doi:10.1039/C1CP22347J
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Fig. 2 (a) Real-time kinetic profiles of the real part, he1i, of the pseudodielectric function recorded at the photon energy of 4.2 eV during graphene
growth on polycrystalline 300 nm Ni/300 nm SiO2/Si (black curve) and on polycrystalline 300 nm Cu/300 nm SiO2/Si (red curve) (CH4 : H2 =
100 : 3). At A-point CH4 is injected into the reactor, at C-point CH4 is stopped and sample cooled down, at D-point temperature reached 400 1C
and the final point is at room temperature (RT). (b) Typical Raman spectra of graphene grown on Cu and Ni with the corresponding photographs
as inset. (c) Sketch of graphene formation by both direct chemisorptions/deposition on Cu and precipitation/segregation on Ni.
until a temperature of approximately 400 1C is reached. Below The first step to be considered is the competitive dissociative
400 1C the he1i trend reverses and a decrease of he1i is observed. chemisorptions of H2 and physisorption of CH4 on surface
400 1C is the critical temperature above which carbon diffusion sites (s) of Ni and Cu, according to reactions (2) and (3),
in/out of Ni bulk occurs, and below which carbon diffusion is respectively
kinetically inhibited.28
Conversely, in the case of copper, as soon as CH4 is flowing a H2 + 2(s) - H(s) + H(s) (2)
slight linear variation is seen with time until saturation is reached
CH4 + (s) - CH4(s) (3)
(no diffusion-like profiles), and when the CH4 is stopped and the
sample cooled down, no further variation is observed. While we have previously discussed that the sticking coefficient
Furthermore, in order to better understand the role of of hydrogen is higher for Cu than for Ni, CH4 easily physi-
hydrogen and carbon on the Ni and Cu surfaces, we also sorbs on Ni, since the negligible physisorption activation
analyzed the kinetics recorded when after growing graphene energy of 0.01 eV for reaction (3).29 Specifically, the initial
the CH4 is still let to flow in and hydrogen is stopped. In the sticking coefficient of CH4 on Cu is four times lower than Ni,
case of Ni, no appreciable hydrogen reversible phenomenon because of the higher activation energy of 201 kJ mol1 (B2 eV)
was observed (see Fig. 3a). Conversely, for graphene growth for CH4 physisorption on Cu.30
on Ni a variation of he1i occurs when CH4 is off (e.g. see also As for the next steps of CH4 dehydrogenation according to
Fig. 2), whereas for graphene on Cu a variation of he1i occurs the following reactions
when H2 is off, as shown in Fig. 3b.
These different observed profiles can be rationalized in light CH4(s) + (s) - CH3(s) + H(s) (4)
of the different mechanisms for graphene growth on Ni and
CH3(s) + (s) - CH2(s) + H(s) (5)
Cu, which have to take into account the different catalytic
activity of Cu and Ni in the dehydrogenation of CH4 and the CH2(s) + (s) - CH(s) + H(s) (6)
different interaction with hydrogen in addition to the different
C-solubility. CH(s) - C(s) + H(s) (7)
This journal is c the Owner Societies 2011 Phys. Chem. Chem. Phys., 2011, 13, 20836–20843 20839
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Published on 17 October 2011 on http://pubs.rsc.org | doi:10.1039/C1CP22347J
20840 Phys. Chem. Chem. Phys., 2011, 13, 20836–20843 This journal is c the Owner Societies 2011
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This journal is c the Owner Societies 2011 Phys. Chem. Chem. Phys., 2011, 13, 20836–20843 20841
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Conclusions
In summary, graphene has been grown by low pressure CVD
Fig. 6 IR reflection spectra at various angles of incidence (551–751) using a range of CH4–H2 gas compositions on polycrystalline
taken on the graphene/Cu using the BESSY synchrotron light, show- Cu and Ni catalysts aiming at understanding the role of
ing a stretching peak at 2924 cm1. The inset shows a sketch of the hydrogen in differentiating graphene growth kinetics on Cu
out-of-plane C–H defect. and Ni. The peculiarity of this work has been the real-time
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20842 Phys. Chem. Chem. Phys., 2011, 13, 20836–20843 This journal is c the Owner Societies 2011
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ISAS-Berlin for the Infrared ellipsometry measurements at 19 M. Losurdo, M. Bergmair, G. Bruno, D. Cattelan, C. Cobet, A. de
BESSY. The financial contribution of the FP7 European Martino, K. Fleischer, Z. Dohcevic-Mitrovic, N. Esser, M. Galliet,
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