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IJARSCT
International Journal of Advanced Research in Science, Communication and Technology (IJARSCT)
Abstract: Undoped and Mn2+ doped ZnS semiconducting nanoparticles have enormously attracted due to
its stability and a wide variety of technological applications. It is an important semiconductor compound of
the II-VI group with an excellent physical, optical and electrical properties having wide band gap energy of
3.7 eV at room temperature. It has been extensively investigated due to its potential device applications
such as electroluminescent devices, data storage devices, efficient photo catalyst, quantum dot laser,
optoelectronics, solar cells, nano sensors, nano phosphors, biological markers and so on. In the present
work, ZnS and ZnS:Mn2+ nanoparticles have been synthesized employing a very simple eco-friendly
chemical precipitation technique. For this synthesis, zinc acetate and sodium sulphide were used as the
precursor and manganese acetate as the source of impurity with varying concentration in the presence of
N-N dimethyl Formamide as the reaction catalyst. Deionised water was used as the solvent throughout the
experiment. The structure and optical properties of synthesized nanoparticles were characterized by means
of XRD, FTIR and diffused reflectance spectra. X-ray diffraction analysis confirms cubic zinc blend phase
with no any secondary phase for pure and incorporated with Mn2+ZnS nanocrystals. The average crystallite
size as computed to be around 2.7-4.7 nm range. The crystallite size show decrement with the addition of
Mn2+ impurity. The chemical species of the synthesized crystals are identified by FTIR spectra. Diffused
reflectance spectra show increment in the optical band gap from 3.83- 4.03 eV with the increase in doping
concentration of Mn2+.
Keywords: ZnS:Mn2+, chemical precipitation, XRD, FTIR, DRS, Optical band gap
I. INTRODUCTION
Over the past two decades, a great deal of attention has been devoted into the preparation and characterization of high-
quality nanosized semiconductor nanocrystals as a class of condensed matter with reduced dimension in the nanometre
range, owing to their remarkable physical, chemical, optical, electrical, electronic and catalytic properties which might
have promising potentials in many applications, such as light emitting diodes, lasers, luminescent nanocomposites,
diagnostic agents in medicine, solar cell, phosphors in flat panel displays, cathode ray tube (CRT) and so on [1-3]. ZnS
is an interesting host material of II-VI group semiconductor, which has a wide band gap 3.7 eV at room temperature. It
is one of the versatile and talented phosphor materials which show a variety of luminescence properties, suitable for
applications in the flat panel displays, solar cell, cathode ray tube (CRT), infrared windows, sensors, lasers and so on
[4-6]. Doping on ZnS with transition metal ions like Mn2+and Cu2+ is an important aspect to yield different
nanostructures. Nobel luminescence characteristics such as stable light emission with different colours have been
observed from doped ZnS nanocrystals at room temperature. The impurity ions act as the recombination centres for the
excited electron-hole pairs and results in strong and characteristics luminescence [7-8]. In doped compound
semiconductor, the impurity state plays a very crucial part to affect the electronic energy structures and the transition
probabilities. The quantum confinement impact in the energy states also generates unbelievable physical and optical
features [9]. For the effective preparation of undoped and doped ZnS with transition metals as a representative of a wide
band gap semiconductor nanocrystals, various synthetic techniques have recently been reported by many researchers,
such as sol-gel, chemical precipitation, microwave irradiation, chemical vapour deposition, hydrothermal synthesis and
so on [10-13]. Investigation of ZnS doping with transition metals Mn, Cu, Fe and Ni has been in full swing, as the
Copyright to IJARSCT DOI: 10.48175/568 198
www.ijarsct.co.in
ISSN (Online) 2581-9429
IJARSCT
International Journal of Advanced Research in Science, Communication and Technology (IJARSCT)
IV. CONCLUSIONS
2+
In summary, ZnS and ZnS:Mn nanoparticles, sizes in the range of 3 – 5 nm were successfully synthesized by
chemical precipitation method. The structural characterization done through XRD exhibits cubic phase crystal structure
for all the prepared samples and no any characteristic peaks of manganese impurity were detected, at least within the
resolution limit of the diffractometer. The particle sizes of the prepared samples are found to be decreasing with the
addition of Mn2+ doping content. The UV-Visible DR Sspectrum shows that the optical band gap of the prepared
samples increases with Mn2+impurity concentration due to quantum confinement effect. The functional groups of ZnS
and ZnS:Mn2+ nanoparticles are determined by FTIR study. FTIR analysis reveals the Zn – S stretching at 481 and 666
cm-1. Thus the prepared material has a good potential to be used in solar cells and optoelectronic devices applications.
ACKNOWLEDGEMENT
The authors are grateful to the centre director, UGC-DAE Consortium for Scientific Research Centre, Indore for
providing the facilities. The authors are thankful to Dr. Mukul Gupta for XRD, Dr. U. P. Deshpande for FTIR and DRS
measurements.