R20

Code: J217B
J.B. INSTITUTE OF ENGINEERING AND TECHNOLOGY
UGC AUTONOMOUS
II B.Tech. I Semester Regular Examinations, February- 2023
ELECTRONIC CIRCUIT ANALYSIS
[Common to ECE & ECM]
Time: 3 Hours Max. Marks: 70
Instructions: 1. Answer All questions in Part-A.
2. Part-B is “either”, “or” choice and may contain sub-questions.
Q.No Bloom’s 20
PART-A
Level Marks
1. a. Why are common emitter amplifiers more popular L1 1M
b. Give an expression for input impedance, output impedance and voltage gain L2
1M
for E MOSFET
c. If an amplifier with gain of 21000 and feedback of b 5 20.1 has a gain L4
change of 20% due to temperature, calculate the change in gain of the 1M
feedback amplifier.
d. Write down the expression of input impedance of voltage series feedback L2 1M
e. What is heat sink L2 1M
2. a. What are the advantage of Darlington amplifier L1 3M
b. What is body effect in MOSFET? How does it change the small signal L1 3M
equiavalent circuit of the MOSFET?
c. Calculate the gain without and with feedback for the FET amplifier circuit L5
of Fig. 7 and the following circuit values: R1= 80 kV, R2= 20 kV, R= 10kV, 3M
RD= 10 kV, and gm= 4000 mS.
d. Define Gain Stability L2 3M
e. Define thermal stability L2 3M

PART- B 50 Marks
3. a. Calculate the small signal voltage gain of an emitter follower circuit. Given β L5 5M
= 100, VBE = 0.7, VA = 80V,,ICQ = 0.793mA, VCEQ = 3.4V,Vt = 26mV.

b. Calculate the Ic, VCE, and gm of the emitter follower circuit shown. Assume L6 5M
Rs = 0.5kΩ, rп = 3.28kΩ, β= 100 and ro= 100kΩ.
 [ OR ]
c. For the CC transistor amplifier (emitter follower) circuit, find the L2 10 M
expressions
for input impedance and voltage gain. Assume suitable model for transistor.

4. a. Draw a discrete common gate JFET amplifier and derive voltage gain, input L3 10 M
impedance and output impedance with small signal equivalent circuit.
[ OR ]
c. Determine the voltage gain of the CS MOSFET circuit, assuming the L4 5M
following parameters: VDD = 3.3v,RD = 10KΩ, RG1 = 140KΩ, RG2 =
60KΩ and Rsi = 4KΩ. the transistor parameters are VTN = 0.4v, Kn =
0.5mA/V and λ= 0.02V-1
d. Design a JFET source follower circuit with a specified small signal voltage L6 5M
gain given IDSS=12 mA,Vp=-4V,λ=0.01v-1Determine Rs and IDQ such that
small signal voltage gain is at least Av=0.90.

5. a. Explain the operation of Voltage shunt and current shunt configuration with L2 10 M
neat diagram.
[ OR ]
c. Calculate the voltage gain of the circuit. L4 10 M
6. a. Derive the expression frequency of oscillation and condition for sustained L3 10 M
oscillations of a FET based RC Phase shift oscillator.
[ OR ]
c. Derive the expression frequency of oscillation and condition for sustained L3 10 M
oscillations of a Hartley oscillator.

7. a. Explain the operation of class A push-pull power amplifier. L3 10 M

[ OR ]
c. Explain the reasons for oscillations in a tuned amplifier. Briefly explain the L3 10 M
methods
used to stabilize the tuned amplifiers against oscillations.
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