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Silicon as a MEMS material

Conference Paper · September 2015

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 Silicon as a MEMS material
R. Briseño-Rodríguez1*, P. I. Alcántara-Llanas1, A. P. González-Arceo1,
M. Bandala-Sánchez1
1Microelectronic Systems Department, CIDESI, Av. Playa Pie de la Cuesta 702, Querétaro, México.

*rodolfo.briseno@cidesi.edu.mx

Abstract
The last decades have seen an ever-increasing use of silicon for the
What are MEMS?
MEMS are devices in which electrical and mechanical components of micrometer
fabrication of miniaturized systems, this development has been driven
dimensions are combined into a single circuit to perform different tasks. Microsensors get
by the road maps in the microelectronics industry, but during the last
data from the environment through measuring mechanical, thermal, biological, chemical,
few years the focus of the field is shifting toward the use of silicon for
optical and/or magnetic parameters, this information is processed via embedded electronics
fabrication of microelectromechanical systems (MEMS) due to its
and sent as a signal or a response through microactuators.
versatility, its mechanical properties, the wealth of potential silicon-
based novel applications and its cost as is one of the most abundant
elements on earth, compatible with most batch-processed integrated MEMS is not just about the miniaturization of mechanical components, is a way of making
circuits technologies. This work presents an overview of the reasons why things, a technology for designing and creating complex components and devices with batch
silicon has such an special place in fabrication of MEMS, its advantages, fabrication techniques similar to the used in IC manufacturing, thus enabling fully integrated
limitations, and its expected routes of new development. systems.

Silicon in MEMS
History of MEMS Single crystal silicon is the most used semiconductor material in MEMS manufacturing
and electronic circuits industry. Being the second most abundant element on earth, silicon is
a relatively inexpensive material and is highly reliable because of its properties; its
processing can be readily controlled to obtain high level of precision and reproducibility and
lots of micromachined devices can be made from a single wafer.

The future of MEMS is incredibly ascending;

the MEMS industry alone is preparing
to exceed $20B by 2020.

Silicon properties Silicon Applications Future of MEMS

Beside its electronic properties the growing demand Microfabrication trends keep moving in the direction
of silicon is due to its outstanding mechanical,
in MEMS of further miniaturization and heterogeneous
chemical and thermal properties: There is a whole array of actual MEMS applications. integration of devices due to new materials, new
As a breakthrough technology it allows unparalleled features and new manufacturing capabilities; some of
Basic parameters of silicon
synergy between previously unrelated sectors such as these possibilities for MEMS are listed below.
Crystal structure Diamond
computing, transportation, communications or health.
Lattice constant 0.5431 nm New materials New functionalities New capabilities of
Here are a few applications of current interest: fabrication
Melting point 1687 K Internet of Things
Piezo-electric thin films •Smartphones Self assembling
Specific density 2.329 g/cm3 at 298 K •Tablets
•Smart TV
•Cameras Top down-bottom up
Carbon nanotubes approaches
Thermal conductivity 149 W/m·K •Fridges
•Washing machines

Coefficient of thermal 2.56*10-6 m-1K-1 Nanoimprinting

DNA
Wearable electronics
expansion (at 298K) Biomimetic oriented
Combo sensors manufacturing
Specific heat capacity 19.79 J/mol·K Bio-molecular templates
Medical applications
•Cochlear implants Micro as vehicle for nano
Young’s modulus 150 Gpa •Artificial retina
Polymers •Cardio MEMS
•Chemical dosifiers 3D – Printing
Speed of sound 8433 m/s
Carbon fibers Self calibration Flexible electronics
Hardness 7 Mohs
Self powering

Hardness 850 kg/mm (Knoop)

In the microelectronics industry, silicon is used In 2014, the MEMS sector represented an $11.1B
Index of refraction
(varies with T and λ)
~ 3.54 λ 1.1 µm, RT primarily in two areas, IC and MEMS. Both business for Si-based devices. The MEMS industry has
technologies have successful aspects and limitations in reached this landmark thanks to the smartphone and
● It is almost an ideal structural material. It has about their processing. Semiconductor and MEMS
the same Young’s modulus as steel, but is as light as tablet industry and there is still growth ahead for
applications use more than 29,000 tons/year (2014) of wearables and the ‘Internet of Things’ (IoT).
aluminum. high-purity silicon.
● It has a thermal conductivity comparable to metals. MEMS market forecast: 2014-2020
(Source: Status of the MEMS Industry report, Yole Développement, April 2015)
Its thermal expansion coefficient is low compared IC MEMS Others

25 Oscillators
to most metals, making it insensitive to thermal Keys to success
• MOSFET
Keys to success
• LIGA
RF MEMS

• CMOS
shock and fatigue. • Size stability
• Bulk micromachining
• Precise structures
• Raised structures
20
Microdispensers (microfluidics)

Other optical MEMS

● It is pretty inert in a normal environments, it does Materials

Si, SiO2, Si3N4, Al Materials
Projection systems

Microdisplays
US$B revenues

not react with most acidic compounds, but it reacts Conventional processes
Piezoelectric films (e.g., PZT), magnetic films
(e.g., Ni, Fe, Co, and rate earth alloys). High-
temperature materials (e.g., SiC and
15
PIR & thermopiles

Photolithography, thermal oxidation, dopant

with dilute alkalis and halogens. diffusion, ion implantation, LPCVD, PECVD,
evaporation, sputtering, wet etching, plasma
ceramics), mechanically robust Al alloys,
stainless steel, Pt, Au, sheet glass, plastics
10
Microbolometers

Inertial combos
(e.g., PVC and PDMS).
● Due to its crystallography, both isotropic and etching, RIE, ion milling.
Convencional processes
Digital compass

Gyroscopes
Limitations
anisotropic chemical etching can be employed to • High costs in manufacturing.
Photolithography, LPCVD, PECVD, DRIE,
anisotropic wet etching of single-crystal
5 Accelerometers
• Leaks due to the reduction of the lateral silicon, spin casting, x-ray lithography, Microphones
create microstructures in a controlled fashion. dimensions of the transistor. electroplating, low-stress LPCVD films, thick-
film resist (SU-8), micromolding, batch Pressure sensors
• Introducing impurities stably has a 0
● Its electric conductivity can be tuned by adding thermodynamic limit.
• Statistical fluctuation of impurity
microassembly.
2014 2015 2016 2017 2018 2019 2020 InkJet heads

Limitations
small amounts of impurities. concentration.
In microfluidics and optical applications.

Conclusion
At present, silicon is still king as a MEMS material, the technical
platforms and know-how to produce micromachined devices on
silicon is already available. To develop new miniaturized solutions
References: where the device fits the need, MEMS makers need to stimulate
.
[1] Veikko Lindroos, Markku Tilli , Ari Lehto & Teruaki Motooka, “Handbook of silicon based MEMS Materials and Technologies”. USA, 2010. further collaboration between disciplines such as electrical and
[2] H. Van Heeren & P. Salomon, “MEMS - Recent Developments, Future Directions”. Inglaterra, 2007. mechanical engineers, biologists, chemists, physicists and material
[3] Maluf Nadim & Williams Kirt, “An introduction to microelectromechanical systems engineering”. USA, 2002.
[4] Kurt. E. Petersen, “Silicon As a Mechanical Material”. USA, 1982.
scientists. MEMS is not the goal; the solution to the problem is the
[5] Mark J. Madou, “Fundamentals of microfabrication and nanotechnology”. USA, 2011 goal.
[6] Marvelous Bryzek, J., Roundy, S., Bircumshaw, B., Chung, M. Marvelous MEMS, “Circuits and Devices Magazine”. USA, 2006.
[7] Johannes Bernreuter, “The 2014 Who’s who of Solar Silicon Production”. Alemania, 2014.
[8] Jesús A. del Álamo, “Microelectrónica de Si: de la era de los ordenadores al internet”. USA, 2010.
[9] Eric Mounier, Claire Troadec & Guillaume Girardin, “Market & Technology Report”, YOLE Développement, Francia, April, 2015
Acknowledgement
The authors are grateful to Dr. Horacio Estrada V. from CENAM, Dr. José Mireles Jr.
from UACJ and Dr. Pedro González G. from CIDESI for their support.
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