GS*

3.7.2 Junetion Capacitances

(1)/The voltage dependent source-substrate and drain-substrate
C and Cab
junction capacitances
respectively.
Both of these capacitances are due to the depletion charge
surrounding the respective source
or drain diffusion region enmbedded in the substrate.
(3 Then diffusion region forms a number of planner PN junctions with
surrounding P-type
substrate, indicated here with 1 through 5.
(4) The dimensions of the rectangular box representing the diffusion region are given as VW,Y and
X Step prn-junction profiles will be assumed for all junctions for simplicity.
(6) 2,3and 4 surrounded by the p* channel-stop implant. 1is facing the channel and 5facing p.
type substrate which has a doping density N-since p* channel-stop implant density is
A

usually about 10NA, the junction capacitances associated with these silde aslls will be different
from the other junction capacitances.
(6) To calculate the depletion capacitance ofa reverse-biased abrupt pn-junction.
Calcutation
Consider first the depletion region thickness,xd. Assuming that the n-type and p-type
doping densities are given by N,and N respectively and that reverse bìased voltage is
SYen by V(-ve), the depletion region thickness can be found,

X= 2e NN, tNp,(on- V) ........1)

Np
%=built in junction potential
...2)
.....
 The depletion region charge stored in area can be written in terms of the depletion region

thickness, X,
(Junction Area Type Gete Oxlde

W.x, n'/p
n'/p" 2
3 W.x, n'/p*
4 Yx n/p*
W.Y n'/p W
Channel

Source and Drain

Ss DiMöslon Reglons
Fig,5.22. Three-dimensional view of the n* diffusion region within the p-type substrate.
dtpkken
N.N,
chage -AqiN, +ND (
NNp
N, +N 3)
A
N
but
(4)

:c,()-4: (5)

c,(v)= A.Cjo
(6)

Where m= grading coefficient.

-; for abrupt PN junction for linear PN junction

1
(for m=; compare equation ...6) &(5)we get,

=
9/ NN,
2N, +Np) o o(7)
 c depends on the external biasedif we are
using a linear PN junction then it is independent
of externalbias voltage.
equivalent large signal capacitance,
4Q
AV

-9(,)-Q,(.)
V, -V,
1
G(v)dv
Here the reverse bias voltage across PN junction is assumed to change from V, to V, .So
the Ca is always calculated for a transistor between V, and V,.
|-m 1-m
AC
..(8)
(Y,-V).(1-m)
For abrupt PN junction.
C
2A C. ’.m=
2
(V, -V,)|
C=AC, K
2/0, ()

where K =Voltage equivalent factor

0<Kea <1 voltage-dependent variations of the
The coefficient k allow us to take into account the
junction capacitance.
:
Effect of Side Wall on Junction Capacitance
source or drain dittusion region are.surrounded by a P
) The sidewalls ofatypical MOSFET
density N,
channel stopimplant, with a higher doping well as the sidewall voltage equivalence factor
,as
(ü) The side wall zero-bias capacitance josw a
those of the bottomjunction.
K(sw)] will be different:from
(üi) Assuming that the side wall doping density is given by N, (sw), the zero-bias capacitance
per unit area, can be found as,

q N (so) N,
where osbuilt-in potential of the sidewall junctions.
Cjosw =

2 N,+N, (so) OS)

All the side wall have same depth X,.

and K (so) when a voltage swing between V,and V,2

2/9,80/-V,-Vom V)
|K (so) =- V, -V,
The equivalence large-signal junction capacitance (so) for a sidewall of perimeter P can be
calculated as, C (so) = P.CjpK (so)