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2N4123, 2N4124

General Purpose
Transistors
NPN Silicon

Features http://onsemi.com

• Pb−Free Packages are Available* COLLECTOR

3
MAXIMUM RATINGS
Rating Symbol Value Unit 2
BASE
Collector−Emitter Voltage VCEO Vdc
2N4123 30
2N4124 25 1
Collector−Base Voltage VCBO Vdc EMITTER
2N4123 40
2N4124 30
Emitter−Base Voltage VEBO 5.0 Vdc
Collector Current − Continuous IC 200 mAdc TO−92
CASE 29
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C STYLE 1

Total Device Dissipation @ TC = 25°C PD 1.5 W 1

Derate above 25°C 12 mW/°C 12 2
3 3
Operating and Storage Junction TJ, Tstg −55 to +150 °C STRAIGHT LEAD BENT LEAD
Temperature Range BULK PACK TAPE & REEL
AMMO PACK
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit MARKING DIAGRAM
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W
Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum 2N
Ratings are stress ratings only. Functional operation above the Recommended 412x
Operating Conditions is not implied. Extended exposure to stresses above the AYWW G
Recommended Operating Conditions may affect device reliability. G

x = 3 or 4
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)

ORDERING INFORMATION
Device Package Shipping†
2N4123RLRM TO−92 2000 / Tape & Ammo

2N4124G TO−92 5000 Units / Bulk

(Pb−Free)
†For information on tape and reel specifications,
*For additional information on our Pb−Free strategy and soldering details, please including part orientation and tape sizes, please
download the ON Semiconductor Soldering and Mounting Techniques Reference refer to our Tape and Reel Packaging Specifications
Manual, SOLDERRM/D. Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2008 1 Publication Order Number:

November, 2008 − Rev. 4 2N4123/D
 2N4123, 2N4124

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1) V(BR)CEO Vdc
(IC = 1.0 mAdc, IE = 0) 2N4123 30 −
2N4124 25 −
Collector−Base Breakdown Voltage V(BR)CBO Vdc
(IC = 10 mAdc, IE = 0) 2N4123 40 −
2N4124 30 −
Emitter−Base Breakdown Voltage V(BR)EBO Vdc
(IE = 10 mAdc, IC = 0) 5.0 −

Collector Cutoff Current ICBO nAdc

(VCB = 20 Vdc, IE = 0) − 50
Emitter Cutoff Current IEBO nAdc
(VEB = 3.0 Vdc, IC = 0) − 50

ON CHARACTERISTICS
DC Current Gain (Note 1) hFE −
(IC = 2.0 mAdc, VCE = 1.0 Vdc) 2N4123 50 150
2N4124 120 360

(IC = 50 mAdc, VCE = 1.0 Vdc) 2N4123 25 −

2N4124 60 −

Collector−Emitter Saturation Voltage (Note 1) VCE(sat) Vdc

(IC = 50 mAdc, IB = 5.0 mAdc) − 0.3

Base−Emitter Saturation Voltage (Note 1) VBE(sat) Vdc

(IC = 50 mAdc, IB = 5.0 mAdc) − 0.95

SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product fT MHz
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N4123 250 −
2N4124 300 −
Input Capacitance Cibo pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) − 8.0

Collector−Base Capacitance Ccb pF

(IE = 0, VCB = 5.0 V, f = 1.0 MHz) − 4.0

Small−Signal Current Gain hfe −

(IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k W, f = 1.0 kHz) 2N4123 50 200
2N4124 120 480
Current Gain − High Frequency |hfe| −
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N4123 2.5 −
2N4124 3.0 −

(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) 2N4123 50 200

(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) 2N4124 120 480

Noise Figure NF dB
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k W, f = 1.0 kHz) 2N4123 − 6.0
2N4124 − 5.0
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

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 2N4123, 2N4124

10 200

7.0
100 ts
5.0 70
CAPACITANCE (pF)

50 td

TIME (ns)
Cibo
3.0 30 tf tr
20
2.0 Cobo
VCC = 3 V
10.0 IC/IB = 10
7.0 VEB(off) = 0.5 V
1.0 5.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 1. Capacitance Figure 2. Switching Times

AUDIO SMALL−SIGNAL CHARACTERISTICS

NOISE FIGURE
(VCE = 5 Vdc, TA = 25°C)
Bandwidth = 1.0 Hz
12 14
SOURCE RESISTANCE = 200 W f = 1 kHz
IC = 1 mA
10 IC = 1 mA 12
NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

10 IC = 0.5 mA
8 SOURCE RESISTANCE = 200 W
IC = 0.5 mA IC = 50 mA
8
6 IC = 100 mA
SOURCE RESISTANCE = 1 kW
6
IC = 50 mA
4
4

2 SOURCE RESISTANCE = 500 W 2

IC = 100 mA
0 0
0.1 0.2 0.4 1 2 4 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (kW)

Figure 3. Frequency Variations Figure 4. Source Resistance

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 2N4123, 2N4124

h PARAMETERS
(VCE = 10 V, f = 1 kHz, TA = 25°C)

300 100

hoe , OUTPUT ADMITTANCE (m mhos)

50
200
hfe , CURRENT GAIN

20

100 10

70 5

50
2

30 1
0.1 0.2 0.5 1.0 2.0 5.0 10 0.1 0.2 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 5. Current Gain Figure 6. Output Admittance

20 10

h re , VOLTAGE FEEDBACK RATIO (X 10-4 )

7.0
10
hie , INPUT IMPEDANCE (kΩ )

5.0
5.0
3.0

2.0 2.0

1.0
1.0
0.5
0.7

0.2 0.5
0.1 0.2 0.5 1.0 2.0 5.0 10 0.1 0.2 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 7. Input Impedance Figure 8. Voltage Feedback Ratio

STATIC CHARACTERISTICS

2.0
h FE , DC CURRENT GAIN (NORMALIZED)

TJ = +125°C VCE = 1 V

1.0 +25°C

0.7
0.5 -55°C

0.3

0.2

0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)

Figure 9. DC Current Gain

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 2N4123, 2N4124

VCE , COLLECTOR EMITTER VOLTAGE (VOLTS)

1.0
TJ = 25°C
0.8
IC = 1 mA 10 mA 30 mA 100 mA

0.6

0.4

0.2

0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)

Figure 10. Collector Saturation Region

1.2 1.0

θV, TEMPERATURE COEFFICIENTS (mV/°C)

TJ = 25°C
1.0 VBE(sat) @ IC/IB = 10 0.5 +25°C to +125°C
qVC for VCE(sat)
V, VOLTAGE (VOLTS)

0.8 0
-55°C to +25°C
VBE @ VCE = 1 V
0.6 -0.5

-55°C to +25°C
0.4 -1.0
VCE(sat) @ IC/IB = 10 +25°C to +125°C
0.2 -1.5 qVB for VBE(sat)

0 -2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 11. “On” Voltages Figure 12. Temperature Coefficients

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 2N4123, 2N4124

PACKAGE DIMENSIONS

TO−92 (TO−226)
CASE 29−11
ISSUE AM

A B STRAIGHT LEAD
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
BULK PACK Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
R 3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L
SEATING INCHES MILLIMETERS
PLANE K DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
X X D G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
G J 0.015 0.020 0.39 0.50
H J K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
V C N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
SECTION X−X R 0.115 --- 2.93 ---
1 N V 0.135 --- 3.43 ---

A B BENT LEAD
NOTES:
R 1. DIMENSIONING AND TOLERANCING PER
TAPE & REEL ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION:
AMMO PACK MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
P 4. LEAD DIMENSION IS UNCONTROLLED IN
T P AND BEYOND DIMENSION K MINIMUM.
SEATING
PLANE K MILLIMETERS
DIM MIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19

X X D D 0.40 0.54
G 2.40 2.80
G J 0.39 0.50
J K 12.70 ---
N 2.04 2.66
V
C P 1.50 4.00
R 2.93 ---
SECTION X−X V 3.43 ---
1 N
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under
its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,
or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of
personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.
SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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