Q.6) For the ckt. Shown in fig. below let RE=0.6KΩ, RC=5.6KΩ, β=120, VBE=0.

7V, R1=250KΩ and

R2=75KΩ, VA=∞, determine the small signal voltage gain Av and input resistance looking into
base of the transistor.

Ans: Av=-8.27, Rib=80.1KΩ

Q.7) For the ckt. Shown above let β=100, VBE=0.7V, VA=∞, design a bias stable ckt. Such that
ICQ=0.5mA, VCEQ=2.5V, and Av=-8.
(Ans: to a good approximation Rc=4.54KΩ, RE=0.454KΩ, R1=24.1KΩ and R2=5.67KΩ)
Q.8) For the ckt. Shown in fig. β=100, VBE=0.7V, VA=100V, a).determine the small signal voltage
gain b). determine the input resistance seen by the signal source and the output resistance
looking back into the output terminal.

(Ans: a). Av=-148, b).Rin=6.09KΩ, Ro=9.58KΩ.)

Q.9) For the ckt. Shown in fig. let β=125, VBE=0.7V, VA=200V, , a).determine the small signal
voltage gain b). determine the output resistance.

(Ans: a). Av=-50.5, b).Ro=2.28KΩ.)

Q.10) For each transistor in the circuit in fig. below the parameters are β=125, VBE=0.7V, ro=∞,
a).determine Q-points of each transistor. b).find the overall small signal voltage gain c).
determine the input resistance and the output resistance.

(Ans: a). IcQ1=0.364mA, VCEQ1=7.92V,

IcQ2=4.82mA, VCEQ2=2.71V, b).Av=-17.7
c). Ri=4.76KΩ, Ro=43.7KΩ.)

Fig. for Q.11 fig. for Q.12

Q.13) Determine the 3dB frequency of the short ckt current gain of a BJT. Consider a BJT with
parameters r∏=2.6KΩ, C∏=2pF, and Cµ=0.1pF. (Ans: fβ =29.1MHz)
Q.14) Calculate the bandwidth fβ and capacitance C∏ of a BJT. Consider a transistor that has
parameters fT =500MHz at Ic=1mA, βo=100 and Cµ=0.3pF. (Ans: fβ =5MHz, C∏=11.9pF)
Q.15) A BJT is biased at Ic=1mA and its parameters are βo=150, C∏=4pF and Cµ=0.5pF. determine fβ
and fT. (Ans: fβ =9.07MHz, fT =1.36GHz)
Q.16) A BJT is biased at ICQ=0.25mA and its parameters are βo=100 and Cµ=0.1pF. The beta cut-off
frequency is fβ =11.5MHz. Determine the capacitance C∏. (Ans: 1.23pF)
Q.17) The parameters of a transistor are βo=120, fT =500MHz, r∏=5KΩ and Cµ=0.2pF. Determine C∏
and fβ. (Ans: fβ =4.17MHz, C∏=7.44pF)
Q.18) Determine the unity gain bandwidth of an FET. Consider an n channel MOSFET with
parameters kn=0.25mA/V2 ,VTN=1V, λ=0, Cgd=0.04pF, Cgs=0.2pF. Assume the transistor is
biased at VGS=3V. (Ans: fT=663MHz)
Q.19) For an n channel MOSFET the parameters are kn=0.25mA/V2 ,VTN=1V, λ=0, Cgd=0.02pF,
Cgs=0.25pF. The device is biased at IDQ=0.4mA. Determine the unity gain frequency.
(Ans: fT=333MHz)
Q.20) A MOSFET has a unity gain bandwidth of fT=500MHz. assume overlap capacitances of
Cgsp=Cgdp=0.01pF. if the transistor is biased such that gm=0.5mA/V, determine Cgs. (assume
Cgd is equal to the overlap capacitance) (Ans: Cgs=0.139pF)