UNIT-II

Subjective Questions

2.1 HIGH FREQUENCY RESPONSE : GENERAL CONSIDERATION

1. Explain about different MOSFET Capacitances. [BL2]
2. Derive the expression for unity gain frequency of MOSFET. [BL2]
3. Explain and derive the expression voltage gain for CS Amplifier. [BL2]
4. Explain about different BJT Capacitances. [BL2]
5. Explain and derive the expression voltage gain for CE Amplifier. [BL2]
6. Discuss about the General considerations of amplifier parameters.
[BL2]
7. Find fT for a MOSFET operating at ID = 100 µA and VOV = 0.25 V. The
MOSFET has Cgs = 20 fF and Cgd = 5 fF. [BL3]

2.2 MILLERS THEORM:

1. State and prove Millers Theorem. [BL2]

2. Derive the expression for unity gain frequency of BJT. [BL2]
3. Draw the high frequency models of BJT and MOSFET. [BL2]
4. Figure below shows an ideal voltage amplifier having a gain of -100 V/V with
an impedance Z Connected between its output and input terminals. Find the
Miller equivalent circuit when Z is [BL3]

(a) a 1MΩ resistance, and

(b) a 1pF capacitance .In each case use the equivalent circuit to
Determine VO/Vsig.
2.3 HIGH-FREQUENCY RESPONSE OF THE CS AND CE AMPLIFIERS

1. A common-source MOS amplifier is to be evaluated for its high-frequency

response. For this particular design, R sig = 1 MΩ, Rin = 5 MΩ, RL100 = ‫ ׳‬KΩ, Cgs =
0.2 pF, Cgd = 0.1 pF, and gm = 0.3 mA/V. Estimate the midband gain and the 3-
dB frequency. [BL4]

2. Using the method of open-circuit time constants, a set of amplifiers are

found to be characterized by the following time constants and/or frequencies.
For each case, estimate the 3-dB cutoff frequency in rad/s and in Hz.
(a) 20 ns, 5 ns, 1 ns (b) 50 MHz, 200 MHz, 1 GHz (c) 1µs, 0.4 µs
[BL3]
3. An ideal voltage amplifier with a voltage gain of -1000 V/V has a 0.1 pF
capacitance connected between its output and input terminals. What is the
input capacitance of the amplifier? If the amplifier is fed from a voltage source
Vsig having a resistance Rsig = 1 KΩ, find the transfer function Vo/V sig as a
function of the complex-frequency variable s and hence 3-dB frequency f H and
the unity-gain frequency fT. . HINT: fT= Av * fH. [BL4]

4. A discrete MOSFET CS amplifier has R in= 2 MΩ, gm = 4mA/V, ro = 100 KΩ,

Cgs = 2 pF and Cgd = 0.5 pF. The amplifier is fed from a voltage source with an
internal resistance of 500 KΩ and is connected to a 10 KΩ load. Find (a) the
overall midband gain AM and (b) the upper 3-dB frequency f H.
[BL3]
5. A particular BJT operating at IC = 2 mA has Cµ = 1 pF, CΠ = 10 pF and β=
150. What are fT and fβ for this situation? [BL3]

6. For a CE amplifier, Rsig = 5 KΩ, R1 = 33 KΩ, R2 = 22 KΩ, RE = 3.9 KΩ, RC =

4.7 KΩ, RL = 5.6 KΩ, VCC = 5 V. The DC emitter current can be shown to be I E
= 0.3 mA at which βo = 120, ro = 300 KΩ, and rx =50Ω. Find the input
resistance Rin and the midband gain A M. If the transistor specified to have f T =
 700 MHz and Cµ = 1 pF, find the upper 3-dB frequency f H.
[BL4]
7. Find the Values of AM and FH of a CS Amplifier for Rsig= 100KΩ, RG=
4.7MΩ, RD=RL= 15KΩ, gm= 1mA/V, ro= 150KΩ, Cgs=1pF, Cgd= 0.4pF.
[BL3]
8. For the same specifications as in Q7 (previous one), what is the maximum
value of Cgd can be in order to obtain an FH of at least 1MHz.
[BL3]
2.4 THE CASCODE AMPLIFIER:

1. Derive the expressions for input, output resistances and voltage gain of BJT
cascade Amplifier. [BL2]

2. Explain the small signal analysis of MOS cascode Amplifier. [BL2]

2. Explain the frequency response of MOS cascode Amplifier. [BL2]

3. Explain the frequency response of BJT cascode Amplifier. [BL2]

2.5 The Darlington Configuration

1. Discuss about Darlington Configuration. [BL2]

2. The amplifier circuit shown, determine the value of R such that Q2 is biased
at VCE2= 7.5 V. Assume Q1 and Q2 to be identical with V BE = 0.7 V. Also
determine the small signal input impedance of Q1 and Q2, if both of them
have β = 200. VT= 26mV. (GATE 2014) [BL3]