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  • Sesion 3

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    apachai1opachai
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    The document outlines the steps in a semiconductor fabrication process, including refining the geometry of a silicon substrate, implanting boron at different rotations, implanting and diffusing arsenic, depositing and etching nitride, implanting more arsenic and diffusing again, etching oxide and silicon, and depositing cobalt silicide on the silicon.

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    sesion3

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    The document outlines the steps in a semiconductor fabrication process, including refining the geometry of a silicon substrate, implanting boron at different rotations, implanting and diffusing arsenic, depositing and etching nitride, implanting more arsenic and diffusing again, etching oxide and silicon, and depositing cobalt silicide on the silicon.

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    3 views1 page

    Sesion 3

    Uploaded by

    apachai1opachai
    The document outlines the steps in a semiconductor fabrication process, including refining the geometry of a silicon substrate, implanting boron at different rotations, implanting and diffusing arsenic, depositing and etching nitride, implanting more arsenic and diffusing again, etching oxide and silicon, and depositing cobalt silicide on the silicon.

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    © All Rights Reserved
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    of 1

    init tdr = C_fps

    refinebox Silicon min= {0.0 0.02} max= {0.1 0.12} xrefine= {0.01 0.01 0.01} \
    yrefine= {0.01 0.01 0.01} add
    refinebox remesh

    implant Boron dose=8.0e12<cm-2> energy=25<keV> tilt=30 rotation=0


    implant Boron dose=8.0e12<cm-2> energy=25<keV> tilt=30 rotation=90
    implant Boron dose=8.0e12<cm-2> energy=25<keV> tilt=30 rotation=180
    implant Boron dose=8.0e12<cm-2> energy=25<keV> tilt=30 rotation=-90

    implant Arsenic dose=2.5e15<cm-2> energy=6<keV> tilt=0 rotation=0

    diffuse temperature=1000<C> time=1.5<s>

    deposit material= {Nitride} type=isotropic thickness=0.077


    etch material= {Nitride} type=anisotropic thickness=0.1

    implant Arsenic dose=5.5e15<cm-2> energy=55<keV> tilt=0 rotation=0

    diffuse temperature=1000<C> time=1.5<s>

    etch material= {Oxide} type=anisotropic thickness=0.005

    etch material= {Silicon} type=anisotropic thickness=0.008


    deposit material= {CobaltSilicide} type=anisotropic thickness=0.02
    selective.materials= {Silicon}

    struct tdr = D

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