ST 2SC930

NPN Silicon Epitaxial Planar Transistor

for FM RF amp, mixer, osc, converter and IF

amplifier.

The transistor is subdivided into four groups C, D,

E and F, according to its DC current gain.

On special request, these transistors can be

manufactured in different pin configurations.

1. Emitter 2. Collector 3. Base

TO-92 Plastic Package

Absolute Maximum Ratings (Ta = 25 OC)

Parameter Symbol Value Unit
Collector Base Voltage VCBO 30 V
Collector Emitter Voltage VCEO 20 V
Emitter Base Voltage VEBO 5 V
Collector Current IC 30 mA
Power Dissipation Ptot 250 mW
Junction Temperature Tj 150 O
C
Storage Temperature Range Tstg - 55 to + 150 O
C

Characteristics at Ta = 25 OC
Parameter Symbol Min. Typ. Max. Unit
DC Current Gain
at VCE = 6 V, IC = 1 mA Current Gain C hFE 40 - 80 -
Group D hFE 60 - 120 -
E hFE 100 - 200 -
F hFE 160 - 320 -
Collector Base Cutoff Current
ICBO - - 1 μA
at VCB = 10 V
Emitter Base Cutoff Current
IEBO - - 1 μA
at VEB = 4 V
Gain Bandwidth Product
fT 170 300 - MHz
at VCE = 6 V, IC = 1 mA
Reverse Transfer Capacitance
Cre 1 1.3 1.8 pF
at VCB = 6 V, f = 1 MHz
Base to Collector Time Constant
Rbb•Cc - 20 36 ps
at VCB = 6 V, IC = 1 mA, f = 31.9 MHz
Noise Figure
NF - 4 - dB
at VCB = 6 V, IC = 1 mA, f = 100 MHz
Turn-on Time
ton - 30 - ns
at VIN = +12 V, VBE = -3 V,appointed circuit
Turn-off Time
toff - 30 - ns
at VIN = -12 V, VBE = +3 V, appointed circuit

Dated : 20/05/2003