GNITS-R- 18 – 118MC

G. Narayanamma Institute of Technology & Science

(Autonomous) (for Women)
Shaikpet, Hyderabad- 500 104

III-B.Tech II-Semester Regular/Supplementary Examinations, JUNE -2022.

(VLSI DESIGN)
(ECE)
Max. Marks: 70 Time: 03 Hours

Note:
1. Question paper comprises of Part A and Part B.
2. Part A is compulsory which carries 10 marks. Answer all questions in Part A.
3. Part B (for 60 marks) consists of five questions with “either” “or” pattern. Each question
carries 12 marks and may have a,b,c as sub questions. The student has to answer any one
full question.

PART-A
(Answer 05 questions. Each question carries 2 marks)
[5x2= 10]

Bloom’s
Q.No Question Marks
Level
Q.1 a) Compare between CMOS and Bipolar technologies [2]
b) What is threshold voltage of MOS transistor? [2]
c) Show the transistor and contact cut design rules [2]
d) [2]
e) UNIT-5 [2]
END OF PART A

PART-B
(Answer 05 full questions. Each question carries 12 marks) Marks

Q.2(a) UNIT-1 [00]

(b) [00]
OR
Q.3(a) UNIT-1 [00]
(b) [00]

Q.4(a) UNIT-2 [00]

(b) [00]
OR
Q.5(a) UNIT-2 [00]

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GNITS-R- 18 – 118MC
(b) [00]

Q.6(a) UNIT-3 [00]

(b) [00]
OR
Q.7(a) UNIT-3 [00]
(b) [00]

Q.8(a) UNIT-4 [00]

(b) [00]
OR
Q.9(a) UNIT-4 [00]
(b) [00]

Q.10(a) UNIT-5 [00]

(b) [00]
OR
Q.11(a) UNIT-5 [00]
(b) [00]

END OF PART B
END OF THE QUESTION PAPER

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