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2020 - 4ET572-Optical Communication Ex
2020 - 4ET572-Optical Communication Ex
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2(a) Explain in brief various reasons for occurrence of intramodal dispersion in optical (10)
fibers. What are various methods using which dispersion may be minimized.
(b) Derive an expression for group velocity. Using it determine the expression for pulse (6,4)
broadening due to material dispersion.
(c) Explain various reasons for attenuation loss in fiber optic communication system. (10)
3(a) Compare the laser diode with the LED in terms of following features (i) line width (ii) (10)
coupling efficiency (iii) reliability (iv) Modulation bandwidth. Compare the emission
characteristics of laser diode and LED using appropriate diagrams.
(b) Describe the basic structure and photo-detection process in APD. List the drawback (7,3)
and advantages of APDs.
(c) Discuss the concept of reliability in reference to an injection laser diode (10)
4(a) Describe the structure of Semiconductor Optical Amplifiers. Discuss its advantages (6,4)
and disadvantages.
(b) With the help of suitable diagrams, discuss internal structure and principle of operation (10)
of Raman amplifier.
(c) With the help of suitable diagrams, discuss internal structure and principle of operation (10)
of Erbium Doped Fiber Amplifiers (EDFA).
5(a) Explain the working principle of (i) Fiber Bragg grating based filter (ii) Multilayer (10)
dielectric thin film filters
(b) List and explain various WDM network architectures. List their limitations. What are (10)
the constraints to be followed in RWA.
(c) Write short note on SONET technology. List the various devices used in its (10)
architecture.