1. Determine the total discharge time for the capacitor in a clamper having C = 0.

01 F and R = 500 k
A.5 ms
B. 25 ms
C.2.5 ms
D.50 ms

Option B : Time constant is the time required by Capacitor to get charge to or discharge to 63.2% of total
voltage applied across it, so in one time constant it will be 0.63 of final value, in second it will be 0.63 of
remaining aiming voltage. In this way capacitor will approximately take 5 time constants to get discharge.

The Capacitor fully charge or discharge in 5 time constants.

So, 5*R*C= 25 ms.

2. For a forward-biased diode, the barrier potential ________ as temperature increases.

A.decreases

B.remains constant

C.increases

Ans: A

As the temparature increases the enrgy gap between valence band and conduction band decreases and hence
barrier potential may also decrease.

Vbi = kT/e ln(NaNd/Ni2)

since, NaNd < Ni2
which makes ln(NaNd/ Ni2) a negetive value. When temperature increases the value of Vbi becomes more
negetive or we can say its value decreases.

According to energy band theory if temperature increases the vbi built in potential decreases. Why because
due to average thermal energy kt increases more number of carriers will go into conduction band or diffusion
length decreases. Or by taking potential hill negative for p side in a p-n junction it will prevent majority
carriers movement from p to n side. As temp increases applied vtg increases to nullify vbi neg in p side and
holes will now going to higher to lower. Diffusion process may increases due to smaller energy gap.

3.For a forward-biased diode, as temperature is ________, the forward current ________ for a given value of forward
voltage.
A.decreased, increases
B.increased, increases
C.increased, decreases
D.decreased, decreases
Ans:B As temperature increases we know that depletion region decreases so it results flow of current increases for a
given value of forward voltage.

4.What type of diode circuit is used to clip off portions of signal voltages above or below certain levels?
[A].clipper or limiter
[B].clamper
[C].IC voltage regulator
[D].none of the above

Answer: Option A: Clipper circuits are generally used to clip above or below reference levels.

5.Each diode in a center-tapped full-wave rectifier is ________ -biased and conducts for ________ of the
input cycle.
[A].forward, 90º
[B].reverse, 180º
[C].forward, 180º
[D].reverse, 90º

Answer: Option C: In full wave, diodes are connected in forward bias at end pt of TXF, whereas centre tap is
grounded, it works for full AC cycle so it is called full wave.

6.The boundary between p-type material and n-type material is called

[A].a diode.
[B].a reverse-biased diode.
[C].a pn junction.
[D].a forward-biased diode.

Answer: Option C The imaginary line which is separated p and n region is called pn junction we could not say p type
separate n type separate. Junction is nothing but combination two or more regions.

7.Reverse breakdown is a condition in which a diode

[A].is subjected to a large reverse voltage.
[B].is reverse-biased and there is a small leakage current.
[C].has no current flowing at all.
[D].is heated up by large amounts of current in the forward direction.

Answer: Option A At very large reverse bias, beyond the peak inverse voltage or PIV, a process called
reverse breakdown occurs which causes a large increase in current (i.e. a large number of electrons and
holes are created at, and move away from the pn junction) that usually damages the device
permanently.

In reverse bias condition of diode, junction barrier and reverse bias voltage break the movement of
majority charge carriers at both side but minority charge carriers cross the junction of both side due to
this a large reverse leakage current occurs.

So we can say flowing of reverse leakage current due to the minority charge carriers.

8.For a JFET, the value of VDS at which ID becomes essentially constant is the
[A].pinch-off voltage.
[B].cutoff voltage.
[C].breakdown voltage.
[D].ohmic voltage.
The answer is (A) because at the pinch off voltage the FET goes in the saturation mode and it conducts.

9.How much is the base-to-emitter voltage of a transistor in the "on" state?

[A].0 V
[B].0.7 V
[C].0.7 mV
[D].Undefined
because in active mode base-emitter junction in forward biased so, to over come the barrier potential we have to provide
voltage >0.6v
10. Refer to this figure. If R6 opened, the signal at the drain of Q1 would

[A].increase.
[B].decrease.
[C].remain the same.
[D].distort.
11.Refer to this figure. Find the value of IE.

[A].2 mA
[B].4 mA
[C].5 mA
6 mA
[D].

By Voltage divider rule we have:

Ie = Ve/Re, Re is given, we require Ve to get the value of Ie.
So,
At Base-Emitter Junction, Vbe = Vb-Ve, Implies that Ve = Vb-Vbe or
Ve = 3.07-0.7 = 3V. (since Vb = R2/R1+R2*20).
Ie = Ve/Re = 3V/500 ohm = 0.006 = 6mA.
12.Which capacitance dominates in the reverse-bias region?
[A].depletion
[B].conversion
[C].40 Diffusion
[D].140 None of the above

In reversed bias, depletion width increases hence depletion capacitance dominates. While in forward bias, depletion
width decreases and diffusion capacitance dominates.

13. What is the state of an ideal diode in the region of nonconduction?

An open
[A].
circuit
[B].A short circuit
[C].Unpredictable
[D].Undefined
Conduction region meant for the area where the flow of electrons is allowed. Non conduction region means where flow
of electrons is blocked, so no current. The region where no current is passing considered as open circuit.

14. Refer to this figure. Determine the value of Av.

[A].49.6 [B].5
[C].100 [D].595
Voltage Gain = Rc/(re + Re).
Here re is negligible (re = 26/6 = 4.34 ohm).
Av = Rc/Re.
Av = 2.5*1000/500 = 5.

15.Schottky diodes are very effective at frequencies approaching ________.

[A]. 20 GHz

[B]. 10 MHz

[C]. 100 MHz

[D]. 1 MHz

Answer: Option A
16.Refer to this figure. Determine the minimum value of I B that will produce saturation.

[A]. 0.25 mA

[B]. 5.325 A

[C]. 1.065 A

[D]. 10.425 A
Apply kirchoff's voltage law in the output side 10=4.7*10^3*Ic+0.2

on solving Ic=2.085 ma.

For common emmiter configuration we know Ic=b*Ib ,where b=200

So, Ib = 2.085/200 = 10.425 uA .

17. Calculate VCE.

[A]. –4.52 V

[B]. 4.52 V

[C]. –9 V

[D]. 9V

IB.RB+VBE=9V

IB=(9V-VBE)/RB

IB=8.3/100K=8.3x 10E-5
IC=BETA x IB= 45 x 8.3 X10 E-5

VCE+IC.RC=9V

VCE=9V-IC.RC=9V - 45 x 8.3 x 10 E-5 x 1.2K=9V-4.48V=4.52

18. A voltage regulator with a no-load output dc voltage of 12 V is connected to a load with a resistance of 10 . If the
load resistance decreases to 7.5 , the load voltage will decrease to 10.9 V. The load current will be ________, and the
percent load regulation is ________.

[A]. 1.45 A, 90.8%

1.45 A,
[B]. 10.09%

[C]. 1.2 A, 90.8%

[D]. 1.2 A, 10.09%

Voltage regulation = (VOLTAGE at minimum load) - (VOLTAGE at maximum load).

%voltage regulation = 100x[{ (VOLTAGE at minimum load) - (VOLTAGE at maximum load) }/{VOLTAGE at specified
load}].

Here, voltage at minimum load i.e. no current i.e.open circuit is 12V. Voltage at maximum load is 10.9V. Voltage at
specified load is not given so take it equal to voltage at any load not equal to zero;so let take it 10.9V again.

Now, ANS = 100 x [{12-10.9}/10.9] = 10.09.

19.Determine the reading on the meter when VCC = 20 V, RC = 5 k , and IC = 2 mA.

10
[A].
V

[B]. –10 V

[C]. 0.7 V

[D]. 20 V

Given: Vcc=20v,Ic=2mA,Rc= 5k

Voltmeter calculates voltage between Collector & Emitter terminals i.e. Vce.
We know, Vce=Vcc-IcRc
Vce=20-(5x2)
Vce=20-10
Vce=10v

20.Determine the break frequency for this circuit.

[A]. 15.915 Hz

159.15
[B]. Hz

[C]. 31.85 Hz

[D]. 318.5 Hz

Answer: Option B Frequency(break) = 1/2*pi*RC.

21. Calculate the value of VDS.

[A]. 0V

[B]. 8V

[C]. 4.75 V

[D]. 16 V

KVL@ GS loop...
then Vgs=-8V
then use shockley equation
Id=Idss(1-(Vgs/Vp))^2
Id=0A
then KVL@ DS loop
16V-Id(2K)-Vds=o
Vds=16V
22.Determine RB1 for a silicon PUT if it is determined that h = 0.84, V P = 11.2 V, and RB2= 5 k .
[A]. 12.65 k

[B]. 16.25 k

[C]. 20.00 k

[D]. 26.25 k

PUT - PROGRAMMABLE UNIJUNCTION TRANSISTOR.

FORMULA:

H = RB1/(RB1+RB2).
0.84 = RB1/(RB1+5).

RB1 = 26.25 Kohm.

25.Refer to this figure. The output voltage at f cl = 12 mV. What is the output voltage at the midpoint frequency?

[A]. 12 mV

[B]. 12 mV p-p

[C]. 16.97 mV

[D]. 8.48 mV
Av(low) = 0.707Av(mid).

(Vo/Vi)low = 0.0707*(Vo/Vi) mid.

Vi cancelled.

Vo = 12/0.0701.
= 16097 mV.
26. Determine the peak value of the current through the load resistor.
 [A]. 2.325 mA

[B]. 5 mA

[C]. 1.25 mA

[D]. 0 mA

Answer: Option A
On +ve signal,diode1 is open and diode2 is forward biased and hence the op Volt vo=vi-vt
=10-0.7=9.3V
Reff=load resistance+2k
2k+2k=4k
Hence I=vo/reff=9.3/(4*10^3)=2.325mA.

27. An RC network has values of R = 1.2 k and C = 0.22 F. Find fc.

[A]. 3.79 kHz

[B]. 1.89 kHz

[C]. 603 Hz

[D]. 60 Hz

f = (1/2*pi*R*C).

= (1/2*3.1416*1.2*10^3*.22*10^-6).

= 603 Hz.

28. Determine what maximum dissipation will be allowed for a 70-W silicon transistor (rated at 25ºC) if derating is
required above 25ºC by a derating factor of 0.6 W/ºC at a case temperature of 100º.
25
[A]. W

[B]. 30 W

[C]. 35 W

[D]. 40 W

At a case temperature of 100deg = 100-25 = 75 deg c.

Derating factor 0.6W/degc above 25deg c.
Than 75 X 0.6 = 45w.
max. dissipation = 70-45 = 25w.