Diode Tutorial -1

1. The measured values of a diode at junction temperature T j =25°C are

VD = 0.65 V at iD = 10 µA
0.80 V at iD = 1 mA
Determine (a) the emission coefficient Ƞ and (b) the leakage current IS.
2. The threshold voltage of a silicon diode is VTD = 0.75 V at 25°C. Find the threshold
voltage VTD at (a) Tj = 125°C and (b) Tj = -150°C.
3. The leakage current of a silicon diode is I S =5 *10-14 A at Tj =25°C, and the emission
coefficient is Ƞ=1.8. The junction temperature is T j =90°C. Determine (a) the leakage
current IS and (b) the diode current iD at a diode voltage of VD =0.6 V.
4. The leakage current of a silicon diode is I S=10-9 A at 25°C, and the emission coefficient
is η = 1.6. The operating junction temperature is T j = 60°C. Determine (i) the leakage
current IS and (ii) the diode current ID at VD =0.7 V.
5. A diode for which Ƞ= 1, conducts 1mA at 0.7 V. for which current is its voltage drop
equal to 0.9V.
6. Calculate the factor by which the current will increase in a silicon diode operating at a forward
voltage of 0.4 V when the temperature is raised from 25°C to 100°C. Take n = 1.
7. A diode conducts 1 mA at 20o C. If operated at 100o C, what will be its current? Given
data are: Ƞ= 1.8 and negative temperature coefficient value =-1.8mV/ o C. hints: take
VD=0.7V for iD=1 mA at 20o C.